JP6906363B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP6906363B2 JP6906363B2 JP2017097024A JP2017097024A JP6906363B2 JP 6906363 B2 JP6906363 B2 JP 6906363B2 JP 2017097024 A JP2017097024 A JP 2017097024A JP 2017097024 A JP2017097024 A JP 2017097024A JP 6906363 B2 JP6906363 B2 JP 6906363B2
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- insulating film
- organic insulating
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- display device
- film
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- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000010408 film Substances 0.000 description 263
- 239000010410 layer Substances 0.000 description 59
- 238000005401 electroluminescence Methods 0.000 description 32
- 229910052581 Si3N4 Inorganic materials 0.000 description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 25
- 230000007547 defect Effects 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000001764 infiltration Methods 0.000 description 8
- 230000008595 infiltration Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Description
以下、本発明の実施の形態について、図面に基づいて説明する。
Claims (14)
- 複数の画素を含む画素アレイ部を有する表示領域と、前記表示領域の外周側に設けられた額縁領域と、前記画素アレイ部を駆動する駆動部を有する駆動部形成領域と、を有する表示パネルを含み、
前記表示パネルは、
基板と、
前記基板の上方に画素毎に設けられた下部電極と、前記下部電極の上方に設けられた有機EL層と、前記有機EL層の上方に設けられた上部電極と、を含む有機発光ダイオードと、
前記表示領域及び前記額縁領域に設けられ、前記有機発光ダイオードの発光領域に開口を有する有機絶縁膜と、
前記額縁領域において、前記有機絶縁膜の上面に形成された第1の無機絶縁膜と、
を含み、
前記有機絶縁膜は、前記額縁領域において分断された、前記表示領域側から前記額縁領域の端部側へと延伸する複数の個片有機絶縁膜を含む、
表示装置。 - 前記有機絶縁膜は、前記額縁領域において、前記表示領域と前記額縁領域との境界に並走するように延伸する、複数の前記個片有機絶縁膜をさらに含む、
請求項1に記載の表示装置。 - 前記有機絶縁膜は、前記額縁領域において、前記表示領域側から前記額縁領域の端部側方向、及び前記表示領域と前記額縁領域との境界に並走する方向に分断された、複数の個片有機絶縁膜を含む、
請求項1又は2に記載の表示装置。 - 前記基板の上方に設けられた平坦化膜と、
前記平坦化膜の上方で且つ前記有機絶縁膜の下方に設けられた第2の無機絶縁膜と、
前記額縁領域であって、前記第2の無機絶縁膜の上方に設けられた導電性膜と、
を更に含み、
前記額縁領域において、前記第2の無機絶縁膜及び前記導電性膜は複数の開口部を有する、
請求項1乃至3のいずれか一つに記載の表示装置。 - 前記額縁領域において、前記開口部を少なくとも一部の前記個片有機絶縁膜が塞ぐ、
請求項4に記載の表示装置。 - 前記有機絶縁膜は、
前記開口部を塞ぐ前記個片有機絶縁膜と、
前記開口部を塞がない前記個片有機絶縁膜と、を含み、
前記開口部を塞ぐ複数の前記個片有機絶縁膜の間に、前記開口部を塞がない前記個片有機絶縁膜が介在する、
請求項5に記載の表示装置。 - 前記額縁領域における、複数の前記個片有機絶縁膜の間において、
前記上部電極の下面と、前記導電性膜の上面とが電気的に接続された、
請求項4乃至6のいずれか一つに記載の表示装置。 - 前記上部電極の下面と、前記導電性膜の上面とが接続されるコンタクト領域を有し、
前記駆動部形成領域から離れた側の前記コンタクト領域が、前記駆動部形成領域に近い側の前記コンタクト領域よりも広い、
請求項7に記載の表示装置。 - 前記駆動部形成領域から離れた側の前記個片有機絶縁膜の幅が、前記駆動部形成領域に近い側の前記個片有機絶縁膜の幅よりも狭い、
請求項7に記載の表示装置。 - 前記駆動部形成領域から離れた側の複数の前記個片有機絶縁膜の配置間隔が、前記駆動部形成領域に近い側の複数の前記個片有機絶縁膜の配置間隔よりも広い、
請求項7に記載の表示装置。 - 前記下部電極と前記導電性膜が同一材料により構成される、
請求項4乃至10のいずれか一つに記載の表示装置。 - 前記額縁領域における前記有機絶縁膜の形成領域の面積は、前記額縁領域全体の面積の80%以下である、
請求項1乃至11のいずれか一つに記載の表示装置。 - 前記額縁領域における前記有機絶縁膜の形成領域の面積は、前記額縁領域全体の面積の65%以下である、
請求項1乃至12に記載の表示装置。 - 前記額縁領域における前記有機絶縁膜の形成領域の面積は、前記額縁領域全体の面積の30%以上である、
請求項1乃至13のいずれか一つに記載の表示装置。
Priority Applications (2)
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---|---|---|---|
JP2017097024A JP6906363B2 (ja) | 2017-05-16 | 2017-05-16 | 表示装置 |
US15/970,033 US10446791B2 (en) | 2017-05-16 | 2018-05-03 | Display device |
Applications Claiming Priority (1)
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JP2017097024A JP6906363B2 (ja) | 2017-05-16 | 2017-05-16 | 表示装置 |
Publications (2)
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JP2018195418A JP2018195418A (ja) | 2018-12-06 |
JP6906363B2 true JP6906363B2 (ja) | 2021-07-21 |
Family
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Family Applications (1)
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JP2017097024A Active JP6906363B2 (ja) | 2017-05-16 | 2017-05-16 | 表示装置 |
Country Status (2)
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US (1) | US10446791B2 (ja) |
JP (1) | JP6906363B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102448065B1 (ko) * | 2017-11-30 | 2022-09-28 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
US10840477B2 (en) * | 2018-09-20 | 2020-11-17 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED display device |
CN111341849B (zh) * | 2020-03-05 | 2022-04-12 | 合肥京东方光电科技有限公司 | 显示基板及其制备方法、显示面板 |
US20220052133A1 (en) * | 2020-03-20 | 2022-02-17 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel and display device |
CN111755631A (zh) * | 2020-06-28 | 2020-10-09 | 武汉华星光电半导体显示技术有限公司 | 张网机台 |
CN113258015B (zh) * | 2021-05-11 | 2023-03-31 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示设备 |
Family Cites Families (7)
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JP3825395B2 (ja) * | 2001-10-30 | 2006-09-27 | 株式会社半導体エネルギー研究所 | 発光装置および電気器具 |
US7042024B2 (en) * | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
JP4391126B2 (ja) * | 2002-05-15 | 2009-12-24 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
KR101994227B1 (ko) * | 2012-12-07 | 2019-09-30 | 엘지디스플레이 주식회사 | 유기전계 발광소자 및 그 제조방법 |
KR20150011231A (ko) | 2013-07-22 | 2015-01-30 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
JP6446208B2 (ja) * | 2014-09-03 | 2018-12-26 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102295614B1 (ko) * | 2014-09-29 | 2021-08-27 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
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2017
- 2017-05-16 JP JP2017097024A patent/JP6906363B2/ja active Active
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2018
- 2018-05-03 US US15/970,033 patent/US10446791B2/en active Active
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Publication number | Publication date |
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US10446791B2 (en) | 2019-10-15 |
US20180337365A1 (en) | 2018-11-22 |
JP2018195418A (ja) | 2018-12-06 |
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