JP4391126B2 - 発光装置の作製方法 - Google Patents
発光装置の作製方法 Download PDFInfo
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- JP4391126B2 JP4391126B2 JP2003137169A JP2003137169A JP4391126B2 JP 4391126 B2 JP4391126 B2 JP 4391126B2 JP 2003137169 A JP2003137169 A JP 2003137169A JP 2003137169 A JP2003137169 A JP 2003137169A JP 4391126 B2 JP4391126 B2 JP 4391126B2
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- electrode
- insulating film
- film
- light
- interlayer insulating
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003137169A JP4391126B2 (ja) | 2002-05-15 | 2003-05-15 | 発光装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002139934 | 2002-05-15 | ||
| JP2003137169A JP4391126B2 (ja) | 2002-05-15 | 2003-05-15 | 発光装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004047446A JP2004047446A (ja) | 2004-02-12 |
| JP2004047446A5 JP2004047446A5 (enrdf_load_stackoverflow) | 2006-06-01 |
| JP4391126B2 true JP4391126B2 (ja) | 2009-12-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003137169A Expired - Fee Related JP4391126B2 (ja) | 2002-05-15 | 2003-05-15 | 発光装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4391126B2 (enrdf_load_stackoverflow) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7619258B2 (en) * | 2004-03-16 | 2009-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US8217396B2 (en) | 2004-07-30 | 2012-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region |
| JP5072202B2 (ja) * | 2004-07-30 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP2006114493A (ja) * | 2004-09-17 | 2006-04-27 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US7791270B2 (en) | 2004-09-17 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd | Light-emitting device with reduced deterioration of periphery |
| US8772783B2 (en) | 2004-10-14 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP4954527B2 (ja) * | 2004-10-14 | 2012-06-20 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| KR101054344B1 (ko) | 2004-11-17 | 2011-08-04 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| US8030643B2 (en) | 2005-03-28 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method the same |
| EP1760776B1 (en) * | 2005-08-31 | 2019-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device with flexible substrate |
| JP4954088B2 (ja) * | 2005-12-05 | 2012-06-13 | シャープ株式会社 | 有機エレクトロルミネセンスパネル及び有機エレクトロルミネセンス表示装置 |
| JP5046521B2 (ja) | 2006-01-18 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US7968382B2 (en) | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| KR101041146B1 (ko) * | 2009-09-02 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 표시 장치 |
| DE102010050507A1 (de) * | 2010-11-08 | 2012-05-24 | H.C. Starck Clevios Gmbh | Verfahren zur Herstellung von Schichtkörpern durch Behandlung mit organischen Ätzmitteln und daraus erhältliche Schichtkörper |
| JP6476449B2 (ja) * | 2014-12-16 | 2019-03-06 | 株式会社Ｊｏｌｅｄ | 表示パネル、および表示パネルの製造方法 |
| JP6906363B2 (ja) * | 2017-05-16 | 2021-07-21 | 株式会社ジャパンディスプレイ | 表示装置 |
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| JPH0527996U (ja) * | 1991-09-18 | 1993-04-09 | 沖電気工業株式会社 | Ｅｌデイスプレイ素子 |
| JP3463971B2 (ja) * | 1996-12-26 | 2003-11-05 | 出光興産株式会社 | 有機アクティブｅｌ発光装置 |
| JP4730994B2 (ja) * | 1999-06-04 | 2011-07-20 | 株式会社半導体エネルギー研究所 | 電気光学装置及びその作製方法並びに電子装置 |
| JP4337171B2 (ja) * | 1999-06-14 | 2009-09-30 | ソニー株式会社 | 表示装置 |
| JP2001351787A (ja) * | 2000-06-07 | 2001-12-21 | Sharp Corp | 有機ｌｅｄ素子とその製造方法および有機ｌｅｄディスプレイ |
| JP2002083689A (ja) * | 2000-06-29 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP4884609B2 (ja) * | 2000-08-10 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 表示装置及びその駆動方法、並びに電子機器 |
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