JP4389190B2 - 画素内局所露光制御機能を有するｃｍｏｓアクティブピクセルセンサ - Google Patents

画素内局所露光制御機能を有するｃｍｏｓアクティブピクセルセンサ Download PDF

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JP4389190B2
JP4389190B2 JP32785799A JP32785799A JP4389190B2 JP 4389190 B2 JP4389190 B2 JP 4389190B2 JP 32785799 A JP32785799 A JP 32785799A JP 32785799 A JP32785799 A JP 32785799A JP 4389190 B2 JP4389190 B2 JP 4389190B2
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signal
pixel
transistor
voltage
count value
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JP2000217037A (ja
JP2000217037A5 (https=
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フレデリック・エイ・パーナー
チャールズ・エム・シー・タン
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マイクロン テクノロジー， インク．
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP32785799A 1998-11-18 1999-11-18 画素内局所露光制御機能を有するｃｍｏｓアクティブピクセルセンサ Expired - Fee Related JP4389190B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/195,588 US6580454B1 (en) 1998-11-18 1998-11-18 CMOS active pixel sensor having in-pixel local exposure control
US195588 1998-11-18

Publications (3)

Publication Number Publication Date
JP2000217037A JP2000217037A (ja) 2000-08-04
JP2000217037A5 JP2000217037A5 (https=) 2007-01-11
JP4389190B2 true JP4389190B2 (ja) 2009-12-24

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JP32785799A Expired - Fee Related JP4389190B2 (ja) 1998-11-18 1999-11-18 画素内局所露光制御機能を有するｃｍｏｓアクティブピクセルセンサ

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US (1) US6580454B1 (https=)
EP (1) EP1003330B1 (https=)
JP (1) JP4389190B2 (https=)
DE (1) DE69941532D1 (https=)

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US11425320B2 (en) 2019-06-14 2022-08-23 Samsung Electronics Co., Ltd. CMOS image sensor and auto exposure method performed in units of pixels in the same

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JP3723563B2 (ja) * 2004-04-07 2005-12-07 廣津 総吉 半導体撮像素子
JP4589131B2 (ja) * 2005-01-24 2010-12-01 株式会社フォトロン 画像センサおよびその画像読み出し方法
US7565077B2 (en) * 2006-05-19 2009-07-21 Seiko Epson Corporation Multiple exposure regions in a single frame using a rolling shutter
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US20090002535A1 (en) * 2007-06-27 2009-01-01 Arizona Board Of Regents On Behalf Of Arizona State University Offset-compensated self-reset cmos image sensors
US7920193B2 (en) * 2007-10-23 2011-04-05 Aptina Imaging Corporation Methods, systems and apparatuses using barrier self-calibration for high dynamic range imagers
US8629927B2 (en) 2008-04-09 2014-01-14 Gentex Corporation Imaging device
US8587706B2 (en) 2008-01-30 2013-11-19 Gentex Corporation Imaging device
EP2093996A1 (fr) * 2008-02-22 2009-08-26 CSEM Centre Suisse d'Electronique et de Microtechnique SA Recherche et Développement Capteur de vision pour la mésure d'invariants tels les contrastes et méthode pour effecture une telle mésure
US8836835B2 (en) 2010-10-04 2014-09-16 International Business Machines Corporation Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure
US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
US9099214B2 (en) 2011-04-19 2015-08-04 King Abdulaziz City For Science And Technology Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof
JP5808162B2 (ja) * 2011-06-23 2015-11-10 キヤノン株式会社 撮像素子、撮像装置及び撮像素子の駆動方法
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JP5956755B2 (ja) * 2012-01-06 2016-07-27 キヤノン株式会社 固体撮像装置および撮像システム
CN104115211B (zh) 2012-02-14 2017-09-22 金泰克斯公司 高动态范围成像系统
EP2637400A3 (de) * 2012-03-09 2014-06-18 Sick Ag Bildsensor und Verfahren zur Aufnahme eines Bildes
CN102739924B (zh) * 2012-05-31 2014-04-16 浙江大华技术股份有限公司 一种图像处理方法和系统
US9258503B2 (en) * 2012-12-06 2016-02-09 Panasonic Intellectual Property Management Co., Ltd. A/D converter, image sensor, and digital camera
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JP6230260B2 (ja) * 2013-04-24 2017-11-15 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
WO2018223394A1 (zh) 2017-06-09 2018-12-13 华为技术有限公司 一种图像拍摄方法及装置
JP6987603B2 (ja) * 2017-10-26 2022-01-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP7018293B2 (ja) * 2017-11-06 2022-02-10 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
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JP7338983B2 (ja) * 2019-02-18 2023-09-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
CN112367476B (zh) * 2020-10-30 2022-04-08 Oppo广东移动通信有限公司 Tof相机的曝光时间确定方法、装置及终端设备
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Cited By (2)

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US11425320B2 (en) 2019-06-14 2022-08-23 Samsung Electronics Co., Ltd. CMOS image sensor and auto exposure method performed in units of pixels in the same
US11303835B2 (en) 2019-11-15 2022-04-12 Samsung Electronics Co., Ltd. Pixel array and image sensor including the same

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EP1003330A1 (en) 2000-05-24
DE69941532D1 (de) 2009-11-26
US6580454B1 (en) 2003-06-17
JP2000217037A (ja) 2000-08-04
EP1003330B1 (en) 2009-10-14

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