JP4366039B2 - Organic semiconductor device and manufacturing method thereof - Google Patents

Organic semiconductor device and manufacturing method thereof Download PDF

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JP4366039B2
JP4366039B2 JP2002026675A JP2002026675A JP4366039B2 JP 4366039 B2 JP4366039 B2 JP 4366039B2 JP 2002026675 A JP2002026675 A JP 2002026675A JP 2002026675 A JP2002026675 A JP 2002026675A JP 4366039 B2 JP4366039 B2 JP 4366039B2
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organic semiconductor
electrode
semiconductor layer
organic
forming
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JP2003229616A (en
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哲 板橋
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]

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  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、有機半導体層から成る薄膜トランジスタと発光素子共通基板に一体で形成された有機半導体デバイス及びその製造方法に関する。
【０００２】
【従来の技術】
薄膜トランジスタ（ＴＦＴ）はアモルファスシリコン（ａ−Ｓｉ）を用いたものが良く知られており、既にアクテクィブマトリクス液晶デバイスに実用化されている。
【０００３】
一方、発光素子として有機ＥＬ（ＬＥＤ）も発表されている。しかし、実際に発表されている例では、発光素子は有機ＥＬで駆動用デバイスとしてポリシリコン（poly−Ｓｉ）ＴＦＴが用いられている。
【０００４】
又、一方、駆動用デバイスにも発光素子と同じ有機半導体を用いたＴＦＴは、特開２０００−２９４０３に開示されている。
【０００５】
図３及び図４は特開２０００−２９４０３で説明されている有機ＬＥＤとＴＦＴである。ＴＦＴと発光ダイオードの有機半導体は共通である。しかし、有機半導体層が共通なこの例では、ＴＦＴの主電極であるソース電極とドレイン電極上に半導体層が形成されている。
【０００６】
図４は半導体形成後に主電極を形成している。しかし、ＴＦＴとＬＥＤの半導体層は共通でなく、別々に形成し、パターニングしている。
【０００７】
【発明が解決しようとする課題】
図３のようなＴＦＴでは、移動度の大きい半導体層でＴＦＴを作製した場合、ゲート電極と反対側の表面は空乏化し切らず、低抵抗領域が残り、ＴＦＴのオフ抵抗が小さくリーク電流が大きいものになる。
【０００８】
図３では、ＴＦＴとＬＥＤが別々に形成、パターニングされるため、プロセスが煩雑になる。
【０００９】
又、図３の構成では、ＴＦＴ、ＬＥＤの半導体層における保護膜が開示されておらず、もし、保護膜を形成する場合は、更にもう１層、ＴＦＴとＬＥＤの保護膜として新たな絶縁膜が必要になる。
【００１０】
本発明は上記問題に鑑みてなされたもので、その目的とする処は、極めて簡単なプロセスで同一基板上にＴＦＴとＬＥＤを形成することができる有機半導体デバイス及びその製造方法を提供することにある。
【００１１】
【課題を解決するための手段】
上記目的を達成するため、本発明が提供する有機半導体デバイスは、基板上に有機薄膜トランジスタと有機発光素子とが面内に並んで存在する有機半導体デバイスにおいて、
前記有機薄膜トランジスタは、該基板に接触して存在するソース電極およびドレイン電極と、前記ソース電極および前記ドレイン電極に接触して存在する第１の有機半導体層と、前記第１の有機半導体層に接触するゲート絶縁層と、前記ゲート絶縁層に接触して存在するゲート電極とを有し、
前記有機発光素子は、前記ソース電極およびドレイン電極のうちの一方の電極でもある下部電極と、前記下部電極に対向する位置に存在する第２の有機半導体層および上部電極と、前記第２の有機半導体層と前記下部電極の間に存在する前記第１の有機半導体層とを有し、前記第１の有機半導体層は、前記有機薄膜トランジスタの前記ソース電極および前記ドレイン電極に接触して存在し且つ前記有機薄膜トランジスタと共通あるいは分離して前記第２の有機半導体層と前記下部電極の間に存在しており、
前記ゲート絶縁層は、前記有機薄膜トランジスタの前記第１の有機半導体層に接触し且つ共通して前記有機発光素子の前記第２の有機半導体層および前記上部電極を覆うように存在し、そして前記第１の有機半導体層と前記第２の有機半導体層とが異なる導電型を有することを特徴とする有機半導体デバイスである。
【００１２】
又、本発明が提供する有機半導体デバイスの製造方法は、基板上にソース電極とドレイン電極と第１の有機半導体層とゲート絶縁層とゲート電極を有する有機薄膜トランジスタと、前記ソース電極と前記ドレイン電極のいずれか一方としても機能する下部電極と前記第１の有機半導体層と第２の有機半導体層と上部電極と保護層とを有する有機発光素子とが面内に並んで存在している有機半導体デバイスの製造方法であって、
前記有機薄膜トランジスタを製造する工程は、
基板の表面に第１の導電層を形成する工程と、
前記第１の導電層をパターニングして前記ソース電極および前記ドレイン電極を形成する工程と、
前記ソース電極および前記ドレイン電極に接触する前記第１の有機半導体層を形成する工程と、
前記第１の有機半導体層に接触して前記ゲート絶縁層を形成する工程と、
前記ゲート絶縁層に接触する前記ゲート電極を前記ソース電極と前記ドレイン電極との間隙の上方に形成する工程とを有し、
前記有機発光素子を製造する工程は、
前記下部電極を形成する工程と、
前記第１の有機半導体層を前記下部電極に接して形成する工程と、
前記下部電極と対向する位置に、前記第１の有機半導体層と接触する第２の有機半導体層および前記第２の有機半導体層と接触する上部電極をこの順に形成する工程と、前記上部電極を覆うように前記保護層を形成する工程とを有し、
前記下部電極を形成する工程は、前記第１の導電層をパターニングして前記ソース電極および前記ドレイン電極を形成する工程において得られる前記ソース電極と前記ドレイン電極のいずれか一方を形成する工程と同じであり、前記ソース電極と前記ドレイン電極の前記いずれか一方が前記下部電極としても機能し、
前記第１の有機半導体層を前記下部電極に接して形成する工程は、前記ソース電極および前記ドレイン電極に接触する前記第１の有機半導体層を形成する工程において得られる前記第１の有機半導体層が前記有機発光素子として前記有機薄膜トランジスタと共通してあるいは分離して存在するように形成される工程であり、
前記上部電極を覆うように前記保護層を形成する工程は、前記第１の有機半導体層に接してゲート絶縁層を形成する工程において形成されるゲート絶縁層が前記有機薄膜トランジスタと共通して前記有機発光素子の保護層として前記上部電極を覆うように形成される工程であり、
前記ゲート電極と前記上部電極とは面内で離れて配置されていることを特徴とする有機半導体デバイスの製造方法である。
【００１３】
【発明の実施の形態】
以下、本発明の具体的な実施形態について図面を参照しながら説明する。
【００１４】
図１に一実施例として、同一基板上に有機半導体共有したＴＦＴとＬＥＤを形成した有機半導体素子を示す。図２（Ａ）〜（Ｄ）に図１の有機半導体素子を形成するプロセスを示す。
【００１５】
図２（Ａ）に示すように、ガラス基板１１上にＴＦＴの主電極とＬＥＤの下電極となる導電体１２を堆積し、所望の形状にパターニングする。ＬＥＤからの光をガラス基板側から取り出す場合、下電極は、ＩＴＯ、ＺｎＯ等の透明導電体が必要である。このとき、基板は透明な有機フィルムでも構わない。
【００１６】
基板と反対側から光を取り出す場合は、ＴＦＴの主電極とＬＥＤの下電極は、Ａｌ、Ｃｒ，Ａｕ、Ａｇ、Ｐｔ、Ｔｉ、Ｔａ等の金属が使用できる。この場合、基板は不透明のセラミックス、有機のフィルムでも構わない。
【００１７】
更に、図２（Ｂ）に示すたように、導電体１２上にＴＦＴとＬＥＤの共通有機半導体層１３を形成する。この半導体は、正孔輸送体であっても電子輸送体であっても良い。このとき、ＴＦＴとＬＥＤの半導体を分離しても構わず、連続に形成したままでも構わない。但し、このときでも、ＴＦＴとＬＥＤから成る画素の間は、除去して、画素間は分離した方が良い。このとき、半導体は、所望の形状のみ開口されたマスクを用いて蒸着しても良く、前面に堆積した後、フォトリソによりパターニングしても良い。更に、所望の部分のみ有機半導体を含むインクを印刷するインクジェット法等による印刷でも構わない。
【００１８】
正孔輸送体としては、オリゴチオフェン、ペンタセン、アントラジチオフェン、フタロシアニン等が知られている。
【００１９】
電子輸送体としては、フッ化金属フタロシアニン、ペリレンテトラカルボキシル・ジアンヒドライド、或はそのイミド誘導体、Ｃ６０等が知られている。
【００２０】
可溶性共役ポリマ等は、スクリーン印刷、インクジェット印刷に有効である。
【００２１】
又、図２（Ｃ）に示すように、ＬＥＤ部分２の共通半導体１３上に共通半導体とは異なる型の輸送体の有機半導体層１４を形成する。共通半導体１３が正孔輸送体のときは有機半導体層１４に電子輸送体、共通半導体１３が電子輸送体のときは有機半導体層１４に正孔輸送体を用いる。
【００２２】
更に、ＬＥＤ部２の上部電極１５を堆積し、所望の形状にパターニングする。この上部電極１５は、上部電極側からＬＥＤからの光を照射する場合は、ＩＴＯ、ＺｎＯ等の透明電極にする。下部電極１２側から光が照射される場合は、上部電極は透明電極以外に、Ａｌ、Ｃｒ，Ａｕ、Ａｇ、Ｐｔ、Ｔｉ、Ｔａ等の金属でも構わない。
【００２３】
図２（Ｄ）で示すように、ＬＥＤの保護層を兼ねるゲート絶縁層１６を形成する。絶縁層１６には耐湿性から、プラズマＣＶＤによるＳｉＮ膜等が用いられるが、工程が簡便なスピンナー塗布によるポリイミド膜、或はエポキシ樹脂等の有機系膜でも構わない。この絶縁層は、ＬＥＤ２全体を覆うように形成され、ＬＥＤの保護層を兼ねる。
【００２４】
更に、ＬＥＤからの光の出射側とは反対側の面の電極に金属を用い、その表面を鏡面とすることは、出射側とは反対側の面に到達した光を反射するため、ＬＥＤ発光効率が改善されるために好ましい。
【００２５】
【発明の効果】
以上の説明で明らかなように、本発明によれば、同一基板上にＴＦＴとＬＥＤを形成する際、有機半導体、電極、絶縁層を共通に形成するため、極めて簡便なプロセスで有機半導体デバイスを得ることができる。
【図面の簡単な説明】
【図１】同一基板上にＴＦＴとＥＬの有機半導体層を共通にした有機半導体デバイスの断面図である。
【図２】有機半導体デバイスの製造工程を示すプロセス図である。
【図３】特開２０００−２９４０３で説明されている有機ＬＥＤの断面図である。
【図４】特開２０００−２９４０３で説明されているＴＦＴの断面図である。
【符号の説明】
１ ＴＦＴ部
２ ＬＥＤ部
１１ ガラス基板
１２ ＴＦＴの主電極、ＬＥＤの下電極
１３ 有機半導体層
１４ 有機半導体層
１５ ＬＥＤの上部電極
１６ ＴＦＴのゲート絶縁層、ＬＥＤの保護層
１７ ゲート電極[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an organic semiconductor device integrally formed on a thin film transistor composed of an organic semiconductor layer and a light emitting element common substrate, and a method for manufacturing the same.
[0002]
[Prior art]
Thin film transistors (TFTs) using amorphous silicon (a-Si) are well known and have already been put to practical use in active matrix liquid crystal devices.
[0003]
On the other hand, organic EL (LED) is also announced as a light emitting element. However, in the example actually announced, the light emitting element is an organic EL, and a polysilicon (poly-Si) TFT is used as a driving device.
[0004]
On the other hand, a TFT using the same organic semiconductor as the light emitting element for the driving device is disclosed in Japanese Patent Laid-Open No. 2000-29403.
[0005]
3 and 4 show organic LEDs and TFTs described in JP-A-2000-29403. The organic semiconductor of TFT and light emitting diode is common. However, in this example in which the organic semiconductor layer is common, the semiconductor layer is formed on the source electrode and the drain electrode which are the main electrodes of the TFT.
[0006]
In FIG. 4, the main electrode is formed after the semiconductor is formed. However, the semiconductor layers of TFT and LED are not common and are formed separately and patterned.
[0007]
[Problems to be solved by the invention]
In a TFT as shown in FIG. 3, when a TFT is manufactured with a semiconductor layer having high mobility, the surface opposite to the gate electrode is not fully depleted, a low resistance region remains, the TFT has low off-resistance and a large leakage current. Become a thing.
[0008]
In FIG. 3, since the TFT and the LED are separately formed and patterned, the process becomes complicated.
[0009]
3 does not disclose a protective film in the semiconductor layer of TFT and LED. If a protective film is formed, another layer, a new insulating film as a protective film of TFT and LED, is not disclosed. Is required.
[0010]
The present invention has been made in view of the above problems, and an object of the present invention is to provide an organic semiconductor device capable of forming TFTs and LEDs on the same substrate by a very simple process and a method for manufacturing the same. is there.
[0011]
[Means for Solving the Problems]
In order to achieve the above object, an organic semiconductor device provided by the present invention is an organic semiconductor device in which an organic thin film transistor and an organic light emitting element are arranged in a plane on a substrate.
The organic thin film transistor includes a source electrode and a drain electrode that are in contact with the substrate, a first organic semiconductor layer that is in contact with the source electrode and the drain electrode, and a contact with the first organic semiconductor layer. A gate insulating layer, and a gate electrode present in contact with the gate insulating layer,
The organic light emitting device includes a lower electrode that is also one of the source electrode and the drain electrode, a second organic semiconductor layer and an upper electrode that are located at positions facing the lower electrode, and the second organic and a first organic semiconductor layer between the semiconductor layer and prior Symbol lower electrode, the first organic semiconductor layer is present in contact with the source electrode and the drain electrode of the organic thin film transistor and it is present between the organic thin film transistor and a common or separate to the second organic semiconductor layer and the front Symbol lower electrode,
The gate insulating layer is in contact with the first organic semiconductor layer of the organic thin film transistor and commonly covers the second organic semiconductor layer and the upper electrode of the organic light emitting device, and The organic semiconductor device is characterized in that one organic semiconductor layer and the second organic semiconductor layer have different conductivity types.
[0012]
In addition, the organic semiconductor device manufacturing method provided by the present invention includes a source electrode, a drain electrode, a first organic semiconductor layer, a gate insulating layer, an organic thin film transistor having a gate electrode on the substrate, the source electrode and the drain electrode. organic semiconductors and organic light-emitting device having a said the lower electrode first organic semiconductor layer and the second organic semiconductor layer and the upper electrode protective layer which also serves as one of the exist side by side in the plane A device manufacturing method comprising:
The step of manufacturing the organic thin film transistor includes
Forming a first conductive layer on the surface of the substrate;
Patterning the first conductive layer to form the source electrode and the drain electrode;
And forming the first organic semiconductor layer contacting the source electrode and the drain electrode,
A step of forming the gate insulating layer in contact with the first organic semiconductor layer,
And a step of forming the gate electrode in contact with the gate insulating layer above the gap between the drain electrode and the source electrode,
The step of manufacturing the organic light emitting device includes:
A step of forming the lower electrode,
Forming the first organic semiconductor layer in contact with the lower electrode;
Forming a second organic semiconductor layer in contact with the first organic semiconductor layer and an upper electrode in contact with the second organic semiconductor layer in this order at a position facing the lower electrode; and Forming the protective layer so as to cover,
The step of forming the lower electrode is the same as the step of forming one of the source electrode and the drain electrode obtained in the step of forming the source electrode and the drain electrode by patterning the first conductive layer. Any one of the source electrode and the drain electrode also functions as the lower electrode,
Step, the source electrode and the first organic semiconductor layer obtained in the step of forming the first organic semiconductor layer in contact with the drain electrode is formed in contact with the first organic semiconductor layer on the lower electrode Is a process formed so as to exist in common with or separated from the organic thin film transistor as the organic light emitting element,
In the step of forming the protective layer so as to cover the upper electrode, the gate insulating layer formed in the step of forming the gate insulating layer in contact with the first organic semiconductor layer is shared with the organic thin film transistor. It is a step formed so as to cover the upper electrode as a protective layer of the light emitting element ,
Wherein the gate electrode and the upper electrode is a method of manufacturing an organic semiconductor device which is characterized that you are spaced apart in a plane.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.
[0014]
FIG. 1 shows an organic semiconductor element in which TFTs and LEDs sharing an organic semiconductor are formed on the same substrate as one embodiment. 2A to 2D show a process for forming the organic semiconductor element of FIG.
[0015]
As shown in FIG. 2A, a conductor 12 serving as a main electrode of a TFT and a lower electrode of an LED is deposited on a glass substrate 11 and patterned into a desired shape. When taking out the light from LED from the glass substrate side, the lower electrode needs transparent conductors, such as ITO and ZnO. At this time, the substrate may be a transparent organic film.
[0016]
When light is extracted from the opposite side of the substrate, metals such as Al, Cr, Au, Ag, Pt, Ti, and Ta can be used for the main electrode of the TFT and the lower electrode of the LED. In this case, the substrate may be an opaque ceramic or organic film.
[0017]
Further, as shown in FIG. 2B, a common organic semiconductor layer 13 of TFT and LED is formed on the conductor 12. This semiconductor may be a hole transporter or an electron transporter. At this time, the TFT and LED semiconductors may be separated or may be continuously formed. However, even at this time, it is preferable to remove the pixels composed of TFTs and LEDs and separate the pixels. At this time, the semiconductor may be vapor-deposited using a mask having an opening only in a desired shape, or may be patterned by photolithography after being deposited on the front surface. Furthermore, printing by an inkjet method or the like that prints ink containing an organic semiconductor only at a desired portion may be used.
[0018]
As the hole transporter, oligothiophene, pentacene, anthradithiophene, phthalocyanine and the like are known.
[0019]
Known electron transporters include metal fluoride phthalocyanine, perylenetetracarboxyl dianhydride, or its imide derivatives, C60, and the like.
[0020]
Soluble conjugated polymers and the like are effective for screen printing and inkjet printing.
[0021]
Further, as shown in FIG. 2C, an organic semiconductor layer 14 of a transporter of a type different from the common semiconductor is formed on the common semiconductor 13 of the LED portion 2. When the common semiconductor 13 is a hole transporter, an electron transporter is used for the organic semiconductor layer 14, and when the common semiconductor 13 is an electron transporter, a hole transporter is used for the organic semiconductor layer 14.
[0022]
Further, the upper electrode 15 of the LED unit 2 is deposited and patterned into a desired shape. The upper electrode 15 is a transparent electrode such as ITO or ZnO when light from the LED is irradiated from the upper electrode side. When light is irradiated from the lower electrode 12 side, the upper electrode may be made of a metal such as Al, Cr, Au, Ag, Pt, Ti, and Ta in addition to the transparent electrode.
[0023]
As shown in FIG. 2D, a gate insulating layer 16 that also serves as a protective layer of the LED is formed. For the insulating layer 16, a SiN film by plasma CVD is used because of moisture resistance, but a polyimide film by spinner coating or an organic film such as epoxy resin may be used because the process is simple. This insulating layer is formed so as to cover the entire LED 2 and also serves as a protective layer of the LED.
[0024]
Furthermore, using a metal for the electrode on the surface opposite to the light emission side from the LED and making the surface a mirror surface reflects the light that has reached the surface opposite to the emission side, so LED emission It is preferable because the efficiency is improved.
[0025]
【The invention's effect】
As is clear from the above description, according to the present invention, when a TFT and an LED are formed on the same substrate, an organic semiconductor device, an electrode, and an insulating layer are formed in common. Obtainable.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of an organic semiconductor device having a TFT and an EL organic semiconductor layer in common on the same substrate.
FIG. 2 is a process diagram showing a manufacturing process of an organic semiconductor device.
FIG. 3 is a cross-sectional view of an organic LED described in Japanese Patent Laid-Open No. 2000-29403.
FIG. 4 is a cross-sectional view of a TFT described in Japanese Patent Laid-Open No. 2000-29403.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 TFT part 2 LED part 11 Glass substrate 12 TFT main electrode, LED lower electrode 13 Organic semiconductor layer 14 Organic semiconductor layer 15 LED upper electrode 16 TFT gate insulating layer, LED protective layer 17 Gate electrode

Claims (4)

基板上に有機薄膜トランジスタと有機発光素子とが面内に並んで存在する有機半導体デバイスにおいて、
前記有機薄膜トランジスタは、該基板に接触して存在するソース電極およびドレイン電極と、前記ソース電極および前記ドレイン電極に接触して存在する第１の有機半導体層と、前記第１の有機半導体層に接触するゲート絶縁層と、前記ゲート絶縁層に接触して存在するゲート電極とを有し、
前記有機発光素子は、前記ソース電極およびドレイン電極のうちの一方の電極でもある下部電極と、前記下部電極に対向する位置に存在する第２の有機半導体層および上部電極と、前記第２の有機半導体層と前記下部電極の間に存在する前記第１の有機半導体層とを有し、前記第１の有機半導体層は、前記有機薄膜トランジスタの前記ソース電極および前記ドレイン電極に接触して存在し且つ前記有機薄膜トランジスタと共通あるいは分離して前記第２の有機半導体層と前記下部電極の間に存在しており、
前記ゲート絶縁層は、前記有機薄膜トランジスタの前記第１の有機半導体層に接触し且つ共通して前記有機発光素子の前記第２の有機半導体層および前記上部電極を覆うように存在し、そして前記第１の有機半導体層と前記第２の有機半導体層とが異なる導電型を有することを特徴とする有機半導体デバイス。In an organic semiconductor device in which an organic thin film transistor and an organic light emitting element are arranged in a plane on a substrate,
The organic thin film transistor includes a source electrode and a drain electrode that are in contact with the substrate, a first organic semiconductor layer that is in contact with the source electrode and the drain electrode, and a contact with the first organic semiconductor layer. A gate insulating layer, and a gate electrode present in contact with the gate insulating layer,
The organic light emitting device includes a lower electrode that is also one of the source electrode and the drain electrode, a second organic semiconductor layer and an upper electrode that are located at positions facing the lower electrode, and the second organic and a first organic semiconductor layer between the semiconductor layer and prior Symbol lower electrode, the first organic semiconductor layer is present in contact with the source electrode and the drain electrode of the organic thin film transistor and it is present between the organic thin film transistor and a common or separate to the second organic semiconductor layer and the front Symbol lower electrode,
The gate insulating layer is in contact with the first organic semiconductor layer of the organic thin film transistor and commonly covers the second organic semiconductor layer and the upper electrode of the organic light emitting device, and An organic semiconductor device, wherein the first organic semiconductor layer and the second organic semiconductor layer have different conductivity types. 前記第１の有機半導体層および前記第２の有機半導体層のうちの、一方がＮ型有機半導体層であり、他方がＰ型有機半導体層であることを特徴とする請求項１に記載の有機半導体デバイス。  2. The organic material according to claim 1, wherein one of the first organic semiconductor layer and the second organic semiconductor layer is an N-type organic semiconductor layer and the other is a P-type organic semiconductor layer. Semiconductor device. 前記ソース電極およびドレイン電極のうちの一方の電極でもある下部電極と前記上部電極のうちの少なくとも一方が透明電極であることを特徴とする請求項１乃至２のいずれか一項に記載の有機半導体デバイス。  3. The organic semiconductor according to claim 1, wherein at least one of the lower electrode and the upper electrode, which is one of the source electrode and the drain electrode, is a transparent electrode. 4. device. 基板上にソース電極とドレイン電極と第１の有機半導体層とゲート絶縁層とゲート電極を有する有機薄膜トランジスタと、前記ソース電極と前記ドレイン電極のいずれか一方としても機能する下部電極と前記第１の有機半導体層と第２の有機半導体層と上部電極と保護層とを有する有機発光素子とが面内に並んで存在している有機半導体デバイスの製造方法であって、
前記有機薄膜トランジスタを製造する工程は、
基板の表面に第１の導電層を形成する工程と、
前記第１の導電層をパターニングして前記ソース電極および前記ドレイン電極を形成する工程と、
前記ソース電極および前記ドレイン電極に接触する前記第１の有機半導体層を形成する工程と、
前記第１の有機半導体層に接触して前記ゲート絶縁層を形成する工程と、
前記ゲート絶縁層に接触する前記ゲート電極を前記ソース電極と前記ドレイン電極との間隙の上方に形成する工程とを有し、
前記有機発光素子を製造する工程は、
前記下部電極を形成する工程と、
前記第１の有機半導体層を前記下部電極に接して形成する工程と、
前記下部電極と対向する位置に、前記第１の有機半導体層と接触する第２の有機半導体層および前記第２の有機半導体層と接触する上部電極をこの順に形成する工程と、前記上部電極を覆うように前記保護層を形成する工程とを有し、
前記下部電極を形成する工程は、前記第１の導電層をパターニングして前記ソース電極および前記ドレイン電極を形成する工程において得られる前記ソース電極と前記ドレイン電極のいずれか一方を形成する工程と同じであり、前記ソース電極と前記ドレイン電極の前記いずれか一方が前記下部電極としても機能し、
前記第１の有機半導体層を前記下部電極に接して形成する工程は、前記ソース電極および前記ドレイン電極に接触する前記第１の有機半導体層を形成する工程において得られる前記第１の有機半導体層が前記有機発光素子として前記有機薄膜トランジスタと共通してあるいは分離して存在するように形成される工程であり、
前記上部電極を覆うように前記保護層を形成する工程は、前記第１の有機半導体層に接してゲート絶縁層を形成する工程において形成されるゲート絶縁層が前記有機薄膜トランジスタと共通して前記有機発光素子の保護層として前記上部電極を覆うように形成される工程であり、
前記ゲート電極と前記上部電極とは面内で離れて配置されていることを特徴とする有機半導体デバイスの製造方法。An organic thin film transistor having a source electrode and a drain electrode and the first organic semiconductor layer and the gate insulating layer and a gate electrode on a substrate, the lower electrode and the first, which also functions as one of the source electrode and the drain electrode a manufacturing method of an organic semiconductor device and an organic semiconductor layer and the second organic semiconductor layer and the upper electrode and the organic light emitting element and a protective layer are present side by side in a plane,
The step of manufacturing the organic thin film transistor includes
Forming a first conductive layer on the surface of the substrate;
Patterning the first conductive layer to form the source electrode and the drain electrode;
And forming the first organic semiconductor layer contacting the source electrode and the drain electrode,
A step of forming the gate insulating layer in contact with the first organic semiconductor layer,
And a step of forming the gate electrode in contact with the gate insulating layer above the gap between the drain electrode and the source electrode,
The step of manufacturing the organic light emitting device includes:
A step of forming the lower electrode,
Forming the first organic semiconductor layer in contact with the lower electrode;
Forming a second organic semiconductor layer in contact with the first organic semiconductor layer and an upper electrode in contact with the second organic semiconductor layer in this order at a position facing the lower electrode; and Forming the protective layer so as to cover,
The step of forming the lower electrode is the same as the step of forming one of the source electrode and the drain electrode obtained in the step of forming the source electrode and the drain electrode by patterning the first conductive layer. Any one of the source electrode and the drain electrode also functions as the lower electrode,
Step, the source electrode and the first organic semiconductor layer obtained in the step of forming the first organic semiconductor layer in contact with the drain electrode is formed in contact with the first organic semiconductor layer on the lower electrode Is a process formed so as to exist in common with or separated from the organic thin film transistor as the organic light emitting element,
In the step of forming the protective layer so as to cover the upper electrode, the gate insulating layer formed in the step of forming the gate insulating layer in contact with the first organic semiconductor layer is shared with the organic thin film transistor. It is a step formed so as to cover the upper electrode as a protective layer of the light emitting element ,
Method of manufacturing an organic semiconductor device which is characterized that you said the gate electrode and the upper electrode are spaced apart in a plane.
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