JP2003229616A - Organic semiconductor device and production method therefor - Google Patents
Organic semiconductor device and production method thereforInfo
- Publication number
- JP2003229616A JP2003229616A JP2002026675A JP2002026675A JP2003229616A JP 2003229616 A JP2003229616 A JP 2003229616A JP 2002026675 A JP2002026675 A JP 2002026675A JP 2002026675 A JP2002026675 A JP 2002026675A JP 2003229616 A JP2003229616 A JP 2003229616A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- organic semiconductor
- light emitting
- emitting element
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- -1 anthradithiophene Chemical compound 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機半導体層から
成る薄膜トランジスタと発光素子共通基板に一体で形成
された有機半導体デバイス及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic semiconductor device integrally formed on a thin film transistor composed of an organic semiconductor layer and a light emitting element common substrate, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】薄膜トランジスタ（ＴＦＴ）はアモルフ
ァスシリコン（ａ−Ｓｉ）を用いたものが良く知られて
おり、既にアクテクィブマトリクス液晶デバイスに実用
化されている。2. Description of the Related Art A thin film transistor (TFT) using amorphous silicon (a-Si) is well known and has already been put to practical use in an active matrix liquid crystal device.
【０００３】一方、発光素子として有機ＥＬ（ＬＥＤ）
も発表されている。しかし、実際に発表されている例で
は、発光素子は有機ＥＬで駆動用デバイスとしてポリシ
リコン（poly−Ｓｉ）ＴＦＴが用いられている。On the other hand, an organic EL (LED) is used as a light emitting element.
Has also been announced. However, in the actually published example, the light emitting element is an organic EL and a polysilicon (poly-Si) TFT is used as a driving device.
【０００４】又、一方、駆動用デバイスにも発光素子と
同じ有機半導体を用いたＴＦＴは、特開２０００−２９
４０３に開示されている。On the other hand, a TFT using the same organic semiconductor as the light emitting element for the driving device is disclosed in Japanese Patent Laid-Open No. 2000-29.
403.
【０００５】図３及び図４は特開２０００−２９４０３
で説明されている有機ＬＥＤとＴＦＴである。ＴＦＴと
発光ダイオードの有機半導体は共通である。しかし、有
機半導体層が共通なこの例では、ＴＦＴの主電極である
ソース電極とドレイン電極上に半導体層が形成されてい
る。3 and 4 are shown in Japanese Patent Laid-Open No. 2000-29403.
These are the organic LED and the TFT described in. The TFT and the light emitting diode have the same organic semiconductor. However, in this example in which the organic semiconductor layer is common, the semiconductor layer is formed on the source electrode and the drain electrode which are the main electrodes of the TFT.
【０００６】図４は半導体形成後に主電極を形成してい
る。しかし、ＴＦＴとＬＥＤの半導体層は共通でなく、
別々に形成し、パターニングしている。In FIG. 4, the main electrode is formed after the semiconductor is formed. However, the semiconductor layers of TFT and LED are not common,
Separately formed and patterned.
【０００７】[0007]
【発明が解決しようとする課題】図３のようなＴＦＴで
は、移動度の大きい半導体層でＴＦＴを作製した場合、
ゲート電極と反対側の表面は空乏化し切らず、低抵抗領
域が残り、ＴＦＴのオフ抵抗が小さくリーク電流が大き
いものになる。In the TFT as shown in FIG. 3, when the TFT is made of a semiconductor layer having high mobility,
The surface on the side opposite to the gate electrode is not fully depleted, a low resistance region remains, the off resistance of the TFT is small, and the leak current is large.
【０００８】図３では、ＴＦＴとＬＥＤが別々に形成、
パターニングされるため、プロセスが煩雑になる。In FIG. 3, the TFT and the LED are formed separately,
The patterning complicates the process.
【０００９】又、図３の構成では、ＴＦＴ、ＬＥＤの半
導体層における保護膜が開示されておらず、もし、保護
膜を形成する場合は、更にもう１層、ＴＦＴとＬＥＤの
保護膜として新たな絶縁膜が必要になる。Further, in the configuration of FIG. 3, a protective film in the semiconductor layer of the TFT and the LED is not disclosed, and if a protective film is formed, another layer is newly added as a protective film for the TFT and the LED. A different insulating film is required.
【００１０】本発明は上記問題に鑑みてなされたもの
で、その目的とする処は、極めて簡単なプロセスで同一
基板上にＴＦＴとＬＥＤを形成することができる有機半
導体デバイス及びその製造方法を提供することにある。The present invention has been made in view of the above problems, and an object thereof is to provide an organic semiconductor device capable of forming a TFT and an LED on the same substrate by an extremely simple process and a method for manufacturing the same. To do.
【００１１】[0011]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、共通の基板上に、有機半導体による薄膜
トランジスタと発光素子が形成されている有機半導体デ
バイスにおいて、薄膜トランジスタの主電極の少なくと
も一方と発光素子の一方の電極である第１の電極、薄膜
トランジスタのゲート電極と発光素子のもう一方の電極
である第２の電極、発光素子の薄膜トランジスタの有機
半導体層と発光素子の少なくとも１層の有機半導体層が
各々共通であり、且つ、薄膜トランジスタのゲート絶縁
層が発光素子を覆っていることを特徴とする。In order to achieve the above object, the present invention provides an organic semiconductor device in which a thin film transistor and a light emitting element made of an organic semiconductor are formed on a common substrate, and at least one of the main electrodes of the thin film transistor. And a first electrode which is one electrode of the light emitting element, a gate electrode of the thin film transistor and a second electrode which is the other electrode of the light emitting element, an organic semiconductor layer of the thin film transistor of the light emitting element and at least one organic layer of the light emitting element The semiconductor layers are common to each other, and the gate insulating layer of the thin film transistor covers the light emitting element.
【００１２】又、本発明は、共通の基板上に、有機半導
体による薄膜トランジスタと発光素子を形成する有機半
導体デバイスの製造方法において、共通基板上に第１の
電極層を形成し、それをパターニングして薄膜トランジ
スタの主電極と発光素子の一方の電極とする工程、次い
で有機半導体層を形成して薄膜トランジスタの半導体層
と発光素子の半導体層とする工程、次いで第２の電極層
を形成して薄膜トランジスタのゲート電極と発光素子の
もう一方の電極層と する工程、を含むことを特徴とす
る。Further, according to the present invention, in a method of manufacturing an organic semiconductor device in which a thin film transistor and a light emitting element made of an organic semiconductor are formed on a common substrate, a first electrode layer is formed on the common substrate and patterned. Forming a main electrode of the thin film transistor and one electrode of the light emitting element, then forming an organic semiconductor layer to form a semiconductor layer of the thin film transistor and a semiconductor layer of the light emitting element, and then forming a second electrode layer of the thin film transistor. A step of forming the gate electrode and the other electrode layer of the light emitting element.
【００１３】[0013]
【発明の実施の形態】以下、本発明の具体的な実施形態
について図面を参照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific embodiments of the present invention will be described below with reference to the drawings.
【００１４】図１に一実施例として、同一基板上に有機
半導体共有したＴＦＴとＬＥＤを形成した有機半導体素
子を示す。図２（Ａ）〜（Ｄ）に図１の有機半導体素子
を形成するプロセスを示す。FIG. 1 shows, as an embodiment, an organic semiconductor element in which a TFT and an LED that share an organic semiconductor are formed on the same substrate. 2A to 2D show a process of forming the organic semiconductor element of FIG.
【００１５】図２（Ａ）に示すように、ガラス基板１１
上にＴＦＴの主電極とＬＥＤの下電極となる導電体１２
を堆積し、所望の形状にパターニングする。ＬＥＤから
の光をガラス基板側から取り出す場合、下電極は、ＩＴ
Ｏ、ＺｎＯ等の透明導電体が必要である。このとき、基
板は透明な有機フィルムでも構わない。As shown in FIG. 2A, the glass substrate 11
Conductor 12 to be the main electrode of the TFT and the lower electrode of the LED
Are deposited and patterned into a desired shape. When the light from the LED is taken out from the glass substrate side, the lower electrode is IT
A transparent conductor such as O or ZnO is required. At this time, the substrate may be a transparent organic film.
【００１６】基板と反対側から光を取り出す場合は、Ｔ
ＦＴの主電極とＬＥＤの下電極は、Ａｌ、Ｃｒ，Ａｕ、
Ａｇ、Ｐｔ、Ｔｉ、Ｔａ等の金属が使用できる。この場
合、基板は不透明のセラミックス、有機のフィルムでも
構わない。When light is taken out from the side opposite to the substrate, T
The main electrode of the FT and the lower electrode of the LED are Al, Cr, Au,
Metals such as Ag, Pt, Ti and Ta can be used. In this case, the substrate may be an opaque ceramic or an organic film.
【００１７】更に、図２（Ｂ）に示すたように、導電体
１２上にＴＦＴとＬＥＤの共通有機半導体層１３を形成
する。この半導体は、正孔輸送体であっても電子輸送体
であっても良い。このとき、ＴＦＴとＬＥＤの半導体を
分離しても構わず、連続に形成したままでも構わない。
但し、このときでも、ＴＦＴとＬＥＤから成る画素の間
は、除去して、画素間は分離した方が良い。このとき、
半導体は、所望の形状のみ開口されたマスクを用いて蒸
着しても良く、前面に堆積した後、フォトリソによりパ
ターニングしても良い。更に、所望の部分のみ有機半導
体を含むインクを印刷するインクジェット法等による印
刷でも構わない。Further, as shown in FIG. 2B, a common organic semiconductor layer 13 of TFT and LED is formed on the conductor 12. This semiconductor may be a hole transporter or an electron transporter. At this time, the semiconductors of the TFT and the LED may be separated or may be continuously formed.
However, even at this time, it is better to remove the pixels formed of the TFTs and the LEDs and separate the pixels. At this time,
The semiconductor may be vapor-deposited using a mask in which only a desired shape is opened, or may be patterned by photolithography after being deposited on the front surface. Further, printing may be performed by an inkjet method or the like in which ink containing an organic semiconductor is printed only on a desired portion.
【００１８】正孔輸送体としては、オリゴチオフェン、
ペンタセン、アントラジチオフェン、フタロシアニン等
が知られている。As the hole transporter, oligothiophene,
Pentacene, anthradithiophene, phthalocyanine, etc. are known.
【００１９】電子輸送体としては、フッ化金属フタロシ
アニン、ペリレンテトラカルボキシル・ジアンヒドライ
ド、或はそのイミド誘導体、Ｃ６０等が知られている。Fluorinated metal phthalocyanines, perylene tetracarboxylic dianhydrides, or imide derivatives thereof, C60 and the like are known as electron transporters.
【００２０】可溶性共役ポリマ等は、スクリーン印刷、
インクジェット印刷に有効である。Soluble conjugated polymers and the like are screen-printed,
Effective for inkjet printing.
【００２１】又、図２（Ｃ）に示すように、ＬＥＤ部分
２の共通半導体１３上に共通半導体とは異なる型の輸送
体の有機半導体層１４を形成する。共通半導体１３が正
孔輸送体のときは有機半導体層１４に電子輸送体、共通
半導体１３が電子輸送体のときは有機半導体層１４に正
孔輸送体を用いる。Further, as shown in FIG. 2C, an organic semiconductor layer 14 of a transporter of a type different from that of the common semiconductor is formed on the common semiconductor 13 of the LED portion 2. When the common semiconductor 13 is a hole transporter, an electron transporter is used for the organic semiconductor layer 14, and when the common semiconductor 13 is an electron transporter, a hole transporter is used for the organic semiconductor layer 14.
【００２２】更に、ＬＥＤ部２の上部電極１５を堆積
し、所望の形状にパターニングする。この上部電極１５
は、上部電極側からＬＥＤからの光を照射する場合は、
ＩＴＯ、ＺｎＯ等の透明電極にする。下部電極１２側か
ら光が照射される場合は、上部電極は透明電極以外に、
Ａｌ、Ｃｒ，Ａｕ、Ａｇ、Ｐｔ、Ｔｉ、Ｔａ等の金属で
も構わない。Further, the upper electrode 15 of the LED section 2 is deposited and patterned into a desired shape. This upper electrode 15
When irradiating light from the LED from the upper electrode side,
A transparent electrode such as ITO or ZnO is used. When light is irradiated from the lower electrode 12 side, the upper electrode is not a transparent electrode,
Metals such as Al, Cr, Au, Ag, Pt, Ti and Ta may be used.
【００２３】図２（Ｄ）で示すように、ＬＥＤの保護層
を兼ねるゲート絶縁層１６を形成する。絶縁層１６には
耐湿性から、プラズマＣＶＤによるＳｉＮ膜等が用いら
れるが、工程が簡便なスピンナー塗布によるポリイミド
膜、或はエポキシ樹脂等の有機系膜でも構わない。この
絶縁層は、ＬＥＤ２全体を覆うように形成され、ＬＥＤ
の保護層を兼ねる。As shown in FIG. 2D, a gate insulating layer 16 which also serves as a protective layer of the LED is formed. A SiN film or the like formed by plasma CVD is used as the insulating layer 16 because of its moisture resistance, but a polyimide film formed by spinner coating or an organic film such as an epoxy resin, which is simple in process, may be used. This insulating layer is formed so as to cover the entire LED 2,
Doubles as a protective layer.
【００２４】更に、ＬＥＤからの光の出射側とは反対側
の面の電極に金属を用い、その表面を鏡面とすること
は、出射側とは反対側の面に到達した光を反射するた
め、ＬＥＤ発光効率が改善されるために好ましい。Further, using a metal for the electrode on the side opposite to the side where the light emitted from the LED is used and making the surface a mirror surface reflects the light reaching the side opposite to the side emitting. It is preferable because the LED luminous efficiency is improved.
【００２５】[0025]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、同一基板上にＴＦＴとＬＥＤを形成する際、有
機半導体、電極、絶縁層を共通に形成するため、極めて
簡便なプロセスで有機半導体デバイスを得ることができ
る。As is apparent from the above description, according to the present invention, when a TFT and an LED are formed on the same substrate, an organic semiconductor, an electrode, and an insulating layer are formed in common, so that an extremely simple process is possible. Thus, an organic semiconductor device can be obtained.
【図１】同一基板上にＴＦＴとＥＬの有機半導体層を共
通にした有機半導体デバイスの断面図である。FIG. 1 is a cross-sectional view of an organic semiconductor device in which an organic semiconductor layer of a TFT and an EL are shared on the same substrate.
【図２】有機半導体デバイスの製造工程を示すプロセス
図である。FIG. 2 is a process diagram showing a manufacturing process of an organic semiconductor device.
【図３】特開２０００−２９４０３で説明されている有
機ＬＥＤの断面図である。FIG. 3 is a cross-sectional view of an organic LED described in JP-A-2000-29403.
【図４】特開２０００−２９４０３で説明されているＴ
ＦＴの断面図である。FIG. 4 shows T described in Japanese Patent Laid-Open No. 2000-29403.
It is sectional drawing of FT.
１ ＴＦＴ部 ２ ＬＥＤ部 １１ ガラス基板 １２ ＴＦＴの主電極、ＬＥＤの下電極 １３ 有機半導体層 １４ 有機半導体層 １５ ＬＥＤの上部電極 １６ ＴＦＴのゲート絶縁層、ＬＥＤの保護層 １７ ゲート電極 1 TFT section 2 LED section 11 glass substrate 12 Main electrode of TFT, lower electrode of LED 13 Organic semiconductor layer 14 Organic semiconductor layer 15 LED upper electrode 16 TFT gate insulation layer, LED protection layer 17 Gate electrode
Claims (7)
トランジスタと発光素子が形成されている有機半導体デ
バイスにおいて、 薄膜トランジスタの主電極の少なくとも一方と発光素子
の一方の電極である第１の電極、薄膜トランジスタのゲ
ート電極と発光素子のもう一方の電極である第２の電
極、発光素子の薄膜トランジスタの有機半導体層と発光
素子の少なくとも１層の有機半導体層が各々共通であ
り、且つ、薄膜トランジスタのゲート絶縁層が発光素子
を覆っていることを特徴とする有機半導体デバイス。1. An organic semiconductor device in which a thin film transistor made of an organic semiconductor and a light emitting element are formed on a common substrate, wherein a first electrode which is at least one of a main electrode of the thin film transistor and one electrode of the light emitting element, and a thin film transistor. And a second electrode that is the other electrode of the light emitting element, the organic semiconductor layer of the thin film transistor of the light emitting element and at least one organic semiconductor layer of the light emitting element are common, and the gate insulating layer of the thin film transistor Covering the light emitting element.
の導電方を示す半導体であることを特徴とする請求項１
記載の有機半導体デバイス。2. The common organic semiconductor layer is a semiconductor exhibiting P-type or N-type conductivity.
The organic semiconductor device described.
なくとも一方が透明電極であることを特徴とする請求項
１記載の有機半導体デバイス。3. The organic semiconductor device according to claim 1, wherein at least one of the first electrode and the second electrode is a transparent electrode.
属電極表面が鏡面であることを特徴とする請求項１記載
の有機半導体デバイス。4. The organic semiconductor device according to claim 1, wherein the metal electrode surface of the first electrode or the second electrode is a mirror surface.
の第１の半導体層とは異なる第２の導電形の半導体層を
更に含み、第１の半導体層と第２の半導体層との間で接
合を形成していることを特徴とする請求項１記載の有機
半導体デバイス。5. The light emitting device further includes a semiconductor layer of a second conductivity type different from the first semiconductor layer common to the thin film transistor, and a junction is formed between the first semiconductor layer and the second semiconductor layer. It is formed, The organic-semiconductor device of Claim 1 characterized by the above-mentioned.
トランジスタと発光素子を形成する有機半導体デバイス
の製造方法において、 共通基板上に第１の電極層を形成し、それをパターニン
グして薄膜トランジスタの主電極と発光素子の一方の電
極とする工程、次いで有機半導体層を形成して薄膜トラ
ンジスタの半導体層と発光素子の半導体層とする工程、
次いで第２の電極層を形成して薄膜トランジスタのゲー
ト電極と発光素子のもう一方の電極層とする工程、を含
むことを特徴とする有機半導体デバイスの製造方法。6. A method of manufacturing an organic semiconductor device, comprising: forming a thin film transistor and a light emitting element using an organic semiconductor on a common substrate; forming a first electrode layer on the common substrate; patterning the first electrode layer; Step of forming an electrode and one electrode of the light emitting element, then forming an organic semiconductor layer to form a semiconductor layer of a thin film transistor and a semiconductor layer of a light emitting element,
Then, a step of forming a second electrode layer to form a gate electrode of the thin film transistor and the other electrode layer of the light emitting element is included.
主電極の順に形成することを特徴とする請求項６記載の
有機半導体デバイスの製造方法。7. A main electrode, an organic semiconductor layer, a gate insulating layer,
7. The method for manufacturing an organic semiconductor device according to claim 6, wherein the main electrodes are formed in this order.
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