JP2005167229A5

JP2005167229A5 -

Info

Publication number: JP2005167229A5
Application number: JP2004328446A
Authority: JP
Filing date: 2004-11-12
Publication date: 2007-12-20
Anticipated expiration: 2024-11-12

Claims

A method for manufacturing a light-emitting device having at least first and second semiconductor elements for each pixel of the light-emitting device,
Forming a gate electrode layer by discharging a composition containing a first conductive material over the substrate;
Forming a gate insulating film on the gate electrode layer;
Forming a first semiconductor film on the gate insulating film;
Forming a second semiconductor film containing an impurity element of one conductivity type on the first semiconductor film;
A source electrode and a drain electrode are formed on the second semiconductor film by discharging a composition containing a second conductive material,
Using the source electrode and the drain electrode as a mask, by removing a part of the second semiconductor film, a source region and a drain region are formed,
Forming an insulating film above a portion to be a channel region of the first semiconductor film;
The source electrode as a mask the drain electrode and the insulating film by removing a portion of said first semiconductor film, forming the first and second semiconductor element by forming an island-shaped semiconductor film And
Forming a contact hole by removing at least part of the gate insulating film existing on the gate electrode layer of the first semiconductor element;
By discharging a composition including a third conductive material, through the contact hole, electrically the source electrode or the drain electrode of the second semiconductor device, a gate electrode layer of the first semiconductor element A method for manufacturing a light-emitting device, characterized by forming a conductor for connection to the substrate.

A method for manufacturing a light-emitting device having at least switching and driving semiconductor elements for each pixel of the light-emitting device,
Forming a gate electrode layer by discharging a composition containing a first conductive material over the substrate;
Forming a gate insulating film on the gate electrode layer;
Forming a first semiconductor film on the gate insulating film;
Forming a second semiconductor film containing an impurity element of one conductivity type on the first semiconductor film;
A source electrode and a drain electrode are formed on the second semiconductor film by discharging a composition containing a second conductive material,
Using the source electrode and the drain electrode as a mask, by removing a part of the second semiconductor film, a source region and a drain region are formed,
Forming an insulating film above a portion to be a channel region of the first semiconductor film;
The source electrode as a mask the drain electrode and the insulating film by removing a portion of said first semiconductor film, forming a semiconductor element of the switching and driving by forming the island-shaped semiconductor film ,
By removing at least part of the gate insulating film present on the gate electrode layer of the driving semiconductor element, a contact hole is formed,
By discharging the composition containing the third conductive material, the source electrode or the drain electrode of the switching semiconductor element and the gate electrode layer of the driving semiconductor element are electrically connected through the contact hole. A method for manufacturing a light-emitting device, characterized by forming a conductor for connection to the substrate.

A method for manufacturing a light-emitting device having at least first and second semiconductor elements for each pixel of the light-emitting device,
Forming a gate electrode layer by discharging a composition containing a first conductive material over the substrate;
Forming a gate insulating film on the gate electrode layer;
Forming a first semiconductor film on the gate insulating film;
Forming a second semiconductor film containing an impurity element of one conductivity type on the first semiconductor film;
A source electrode and a drain electrode are formed on the second semiconductor film by discharging a composition containing a second conductive material,
Using the source electrode and the drain electrode as a mask, by removing a part of the second semiconductor film, a source region and a drain region are formed,
Forming an insulating film above a portion to be a channel region of the first semiconductor film;
The source electrode as a mask the drain electrode and the insulating film by removing a portion of a part and the gate insulating film of said first semiconductor film, an island-shaped semiconductor film and the island-shaped gate insulating film To form the first and second semiconductor elements,
Third by discharging a composition containing a conductive material, said first gate electrode layer of the semiconductor element, a conductor for electrically connecting the source electrode or the drain electrode of the second semiconductor element A method for manufacturing a light-emitting device, comprising: forming a light emitting device.

A method for manufacturing a light-emitting device having at least switching and driving semiconductor elements for each pixel of the light-emitting device,
Forming a gate electrode layer by discharging a composition containing a first conductive material over the substrate;
Forming a gate insulating film on the gate electrode layer;
Forming a first semiconductor film on the gate insulating film;
Forming a second semiconductor film containing an impurity element of one conductivity type on the first semiconductor film;
A source electrode and a drain electrode are formed on the second semiconductor film by discharging a composition containing a second conductive material,
Using the source electrode and the drain electrode as a mask, by removing a part of the second semiconductor film, a source region and a drain region are formed,
Forming an insulating film above a portion to be a channel region of the first semiconductor film;
The source electrode as a mask the drain electrode and the insulating film by removing a portion of a part and the gate insulating film of said first semiconductor film, an island-shaped semiconductor film and the island-shaped gate insulating film By forming at least switching and driving semiconductor elements,
By discharging a composition including a third conductive material, a gate electrode layer of the semiconductor element for the drive, a conductor for electrically connecting the source electrode or the drain electrode of the semiconductor element for switching A method for manufacturing a light-emitting device.

In any one of Claims 1 thru | or 4 ,
The method for manufacturing a light-emitting device, wherein the insulating film contains siloxane.

In any one of Claims 1 thru | or 5,
A method for manufacturing a light-emitting device, wherein the insulating film is formed by a droplet discharge method.

In any one of Claims 1 thru | or 6,
The method for manufacturing a light-emitting device, wherein the first semiconductor film is semi-amorphous silicon.

EL television device having a light-emitting device manufactured by the manufacturing method of a light-emitting device according to any one of claims 1 to 7.