JP4364452B2 - 携帯型情報通信装置 - Google Patents
携帯型情報通信装置 Download PDFInfo
- Publication number
- JP4364452B2 JP4364452B2 JP2001139365A JP2001139365A JP4364452B2 JP 4364452 B2 JP4364452 B2 JP 4364452B2 JP 2001139365 A JP2001139365 A JP 2001139365A JP 2001139365 A JP2001139365 A JP 2001139365A JP 4364452 B2 JP4364452 B2 JP 4364452B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- image sensor
- tft
- sensor
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004891 communication Methods 0.000 title claims description 47
- 239000004973 liquid crystal related substance Substances 0.000 claims description 54
- 238000012545 processing Methods 0.000 claims description 18
- 239000010410 layer Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 44
- 239000012535 impurity Substances 0.000 description 40
- 239000000758 substrate Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 238000005070 sampling Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 210000003811 finger Anatomy 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 210000003813 thumb Anatomy 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 125000002066 L-histidyl group Chemical group [H]N1C([H])=NC(C([H])([H])[C@](C(=O)[*])([H])N([H])[H])=C1[H] 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
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- Telephone Function (AREA)
- Telephonic Communication Services (AREA)
- Mobile Radio Communication Systems (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001139365A JP4364452B2 (ja) | 2000-05-09 | 2001-05-09 | 携帯型情報通信装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-135486 | 2000-05-09 | ||
| JP2000135486 | 2000-05-09 | ||
| JP2001139365A JP4364452B2 (ja) | 2000-05-09 | 2001-05-09 | 携帯型情報通信装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002033823A JP2002033823A (ja) | 2002-01-31 |
| JP2002033823A5 JP2002033823A5 (https=) | 2008-05-15 |
| JP4364452B2 true JP4364452B2 (ja) | 2009-11-18 |
Family
ID=26591523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001139365A Expired - Fee Related JP4364452B2 (ja) | 2000-05-09 | 2001-05-09 | 携帯型情報通信装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4364452B2 (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4831456B2 (ja) * | 2004-09-16 | 2011-12-07 | カシオ計算機株式会社 | 画像読取装置 |
| CN100568250C (zh) * | 2004-11-12 | 2009-12-09 | 皇家飞利浦电子股份有限公司 | 用于提供用户识别和认证的用户接口及其方法 |
| WO2007020942A1 (ja) | 2005-08-18 | 2007-02-22 | Nec Corporation | 本人認証システム、これで用いる端末、認証検証装置、及びプログラム |
| TWI354962B (en) * | 2006-09-01 | 2011-12-21 | Au Optronics Corp | Liquid crystal display with a liquid crystal touch |
| EP2420913B1 (en) | 2007-12-03 | 2017-09-06 | Semiconductor Energy Laboratory Co. Ltd. | Mobile phone |
| US20090141004A1 (en) | 2007-12-03 | 2009-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US8736587B2 (en) | 2008-07-10 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20100038046A (ko) | 2008-10-02 | 2010-04-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 및 터치 패널의 구동방법 |
| JP5313853B2 (ja) | 2008-12-24 | 2013-10-09 | 株式会社半導体エネルギー研究所 | センサを有する装置、及び表示装置 |
| KR101633949B1 (ko) | 2008-12-24 | 2016-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 및 그 구동 방법 |
| JP5100670B2 (ja) | 2009-01-21 | 2012-12-19 | 株式会社半導体エネルギー研究所 | タッチパネル、電子機器 |
| JP5202395B2 (ja) | 2009-03-09 | 2013-06-05 | 株式会社半導体エネルギー研究所 | タッチパネル、電子機器 |
| US8982099B2 (en) | 2009-06-25 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel and driving method of the same |
| TWI496042B (zh) | 2009-07-02 | 2015-08-11 | Semiconductor Energy Lab | 觸控面板及其驅動方法 |
| US8624875B2 (en) | 2009-08-24 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving touch panel |
| CN102713999B (zh) * | 2010-01-20 | 2016-01-20 | 株式会社半导体能源研究所 | 电子设备和电子系统 |
| KR102460298B1 (ko) | 2013-04-19 | 2022-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 이차 전지 및 그 제작 방법 |
| CN105814523B (zh) | 2013-12-02 | 2019-05-14 | 株式会社半导体能源研究所 | 触摸面板和制造触摸面板的方法 |
-
2001
- 2001-05-09 JP JP2001139365A patent/JP4364452B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002033823A (ja) | 2002-01-31 |
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