JP4353043B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
- Publication number
- JP4353043B2 JP4353043B2 JP2004280531A JP2004280531A JP4353043B2 JP 4353043 B2 JP4353043 B2 JP 4353043B2 JP 2004280531 A JP2004280531 A JP 2004280531A JP 2004280531 A JP2004280531 A JP 2004280531A JP 4353043 B2 JP4353043 B2 JP 4353043B2
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- Prior art keywords
- semiconductor light
- light emitting
- emitting element
- emitting device
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 142
- 239000011347 resin Substances 0.000 claims description 88
- 229920005989 resin Polymers 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 25
- 229920001187 thermosetting polymer Polymers 0.000 claims description 13
- 230000031700 light absorption Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
そこで、そのような問題に対応すべく、LEDチップと実装基板との接合部の隙間にアンダーフィル樹脂を充填し、バンプの接合部に加わる応力をアンダーフィル樹脂によって分担して軽減した半導体発光装置が開発されている。
これら特許文献のうちで、特許文献4では発光ダイオードの対リフロー性、耐熱サイクル等の信頼性を向上させるために、フェイスダウン構成の発光ダイオード素子のバンプ面を含む1面以上をアンダーフィル樹脂によって覆った発光ダイオードが開示されている。また、特許文献5には、放熱性や信頼性のために、フリップチップボンディングされたLED素子とパッケージ底面との間にアンダーフィル樹脂を充填した表面実装型発光ダイオードが開示されている。
以下、この樹脂止め部1の実施例を図面に従って説明する。なお、各実施例で共通の構成要素には同一の参照符号を与え、その説明は割愛する。
次に、この囲み壁1aをバンプBによって形成した構成の半導体発光装置Mを、図2D(A)、(B)を参照して説明する。
1a、1b 囲い壁
1c、1d 囲い溝
1e 凹所
11 半導体発光素子(透明基板)
12 半導体発光素子の裏面
13 半導体発光素子の側面部
14 半導体発光素子の表面
2 照射開口部
31 アンダーフィル樹脂(熱硬化性樹脂)
B バンプ
M 半導体発光装置
Claims (6)
- 透明基板で形成され、裏面側から光を放射する半導体発光素子を、フリップチップ方式で、バンプと熱硬化性樹脂とによって、内側面に反射面を有した凹所として基板上に形成された照射開口部の底面に固着してなる半導体発光装置において、
上記熱硬化性樹脂は光吸収性を有し、
上記半導体発光素子の表面と、上記照射開口部の底面の少なくとも一方に、上記半導体発光素子と上記照射開口部の底面との隙間を囲う樹脂止め部を形成した半導体発光装置。 - 請求項1において、
上記樹脂止め部は、上記半導体発光素子の周縁に沿って、上記半導体発光素子の表面に連続的に突出形成された囲い壁である半導体発光装置。 - 請求項1において、
上記樹脂止め部は、上記半導体発光素子の周縁に沿って、上記半導体発光素子が実装される照射開口部の底面に連続的に突出形成された囲い壁である半導体発光装置。 - 請求項1において、
上記樹脂止め部は、上記半導体発光素子の周縁に沿って、上記半導体発光素子の表面に連続的に形成された囲い溝である半導体発光装置。 - 請求項1において、
上記樹脂止め部は、上記半導体発光素子の周縁に沿って、上記半導体発光素子が実装される照射開口部の底面に連続的に形成された囲い溝である半導体発光装置。 - 透明基板で形成され、裏面側から光を放射する半導体発光素子を、フリップチップ方式で、バンプと熱硬化性樹脂とによって、内側面に反射面を有した凹所として形成された照射開口部の底面に固着してなる半導体発光装置において、
上記熱硬化性樹脂は光吸収性を有し、
上記半導体発光素子が実装される照射開口部の底面の中央に、上記熱硬化性樹脂の嵩に対応した凹所として、樹脂止め部が形成された半導体発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004280531A JP4353043B2 (ja) | 2004-09-27 | 2004-09-27 | 半導体発光装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2004280531A JP4353043B2 (ja) | 2004-09-27 | 2004-09-27 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006093632A JP2006093632A (ja) | 2006-04-06 |
JP4353043B2 true JP4353043B2 (ja) | 2009-10-28 |
Family
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JP2004280531A Expired - Lifetime JP4353043B2 (ja) | 2004-09-27 | 2004-09-27 | 半導体発光装置 |
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JP (1) | JP4353043B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007010793A1 (ja) * | 2005-07-15 | 2007-01-25 | Matsushita Electric Industrial Co., Ltd. | 半導体発光素子及び半導体発光素子実装済み基板 |
JP5581060B2 (ja) * | 2007-03-08 | 2014-08-27 | センセオニクス,インコーポレーテッド | 過酷な環境のための発光ダイオード |
JP5216251B2 (ja) * | 2007-05-16 | 2013-06-19 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 実装用に半導体発光デバイスを前処理するための方法 |
KR101067217B1 (ko) | 2007-11-15 | 2011-09-22 | 파나소닉 주식회사 | 반도체 발광장치 |
TWI446590B (zh) | 2010-09-30 | 2014-07-21 | Everlight Electronics Co Ltd | 發光二極體封裝結構及其製作方法 |
JP5835789B2 (ja) * | 2010-11-24 | 2015-12-24 | シチズン電子株式会社 | 発光装置 |
JP2015099860A (ja) * | 2013-11-19 | 2015-05-28 | 日本電信電話株式会社 | 光半導体モジュール |
KR102194803B1 (ko) * | 2014-05-29 | 2020-12-24 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR102530759B1 (ko) | 2016-06-14 | 2023-05-11 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
KR101928314B1 (ko) * | 2016-07-29 | 2018-12-12 | 주식회사 세미콘라이트 | 반도체 발광소자 칩 및 이를 사용한 반도체 발광소자 |
WO2018074866A2 (ko) * | 2016-10-21 | 2018-04-26 | 주식회사 세미콘라이트 | 반도체 발광소자 |
KR102017734B1 (ko) * | 2016-10-21 | 2019-09-03 | 주식회사 세미콘라이트 | 반도체 발광소자 |
CN108933185B (zh) * | 2017-05-26 | 2021-01-05 | 黄国益 | 支撑结构、使用其的发光装置以及其加工方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0645658A (ja) * | 1992-07-24 | 1994-02-18 | Ricoh Co Ltd | 半導体素子接着基板 |
JP2000135814A (ja) * | 1998-10-30 | 2000-05-16 | Kyocera Corp | 光プリンタヘッド |
JP3888810B2 (ja) * | 1999-09-27 | 2007-03-07 | ローム株式会社 | Ledランプ |
JP4149677B2 (ja) * | 2001-02-09 | 2008-09-10 | 株式会社東芝 | 発光装置及びその製造方法 |
JP3913090B2 (ja) * | 2002-02-28 | 2007-05-09 | ローム株式会社 | 発光ダイオードランプ |
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2004
- 2004-09-27 JP JP2004280531A patent/JP4353043B2/ja not_active Expired - Lifetime
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