JP4347068B2 - 基板をイオン注入する方法及びこの方法を実施する為のイオン注入装置 - Google Patents

基板をイオン注入する方法及びこの方法を実施する為のイオン注入装置 Download PDF

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Publication number
JP4347068B2
JP4347068B2 JP2003585136A JP2003585136A JP4347068B2 JP 4347068 B2 JP4347068 B2 JP 4347068B2 JP 2003585136 A JP2003585136 A JP 2003585136A JP 2003585136 A JP2003585136 A JP 2003585136A JP 4347068 B2 JP4347068 B2 JP 4347068B2
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JP
Japan
Prior art keywords
substrate
ion
uniformity
raster
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003585136A
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English (en)
Japanese (ja)
Other versions
JP2005522843A5 (enExample
JP2005522843A (ja
Inventor
マーレル，エイドリアン
ハリソン，バーナード
エドワーズ，ピーター
キンダースレー，ピーター
サカセ，タカオ
ファーリー，マーヴィン
サトウ，シュウ
ライディング，ジオフレイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/119,290 external-priority patent/US6956223B2/en
Priority claimed from US10/251,780 external-priority patent/US6908836B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2005522843A publication Critical patent/JP2005522843A/ja
Publication of JP2005522843A5 publication Critical patent/JP2005522843A5/ja
Application granted granted Critical
Publication of JP4347068B2 publication Critical patent/JP4347068B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • X-Ray Techniques (AREA)
JP2003585136A 2002-04-10 2003-03-21 基板をイオン注入する方法及びこの方法を実施する為のイオン注入装置 Expired - Fee Related JP4347068B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/119,290 US6956223B2 (en) 2002-04-10 2002-04-10 Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
US10/251,780 US6908836B2 (en) 2002-09-23 2002-09-23 Method of implanting a substrate and an ion implanter for performing the method
PCT/GB2003/001222 WO2003088299A2 (en) 2002-04-10 2003-03-21 A method of implanting a substrate and an ion implanter for performing the method

Publications (3)

Publication Number Publication Date
JP2005522843A JP2005522843A (ja) 2005-07-28
JP2005522843A5 JP2005522843A5 (enExample) 2009-07-16
JP4347068B2 true JP4347068B2 (ja) 2009-10-21

Family

ID=29253953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003585136A Expired - Fee Related JP4347068B2 (ja) 2002-04-10 2003-03-21 基板をイオン注入する方法及びこの方法を実施する為のイオン注入装置

Country Status (7)

Country Link
EP (1) EP1493171A2 (enExample)
JP (1) JP4347068B2 (enExample)
KR (1) KR100982850B1 (enExample)
CN (1) CN100401449C (enExample)
AU (1) AU2003214435A1 (enExample)
TW (1) TWI319894B (enExample)
WO (1) WO2003088299A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 (en) * 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
GB2409928B (en) * 2004-01-09 2007-03-21 Applied Materials Inc Improvements relating to ion implantation
US7473909B2 (en) * 2006-12-04 2009-01-06 Axcelis Technologies, Inc. Use of ion induced luminescence (IIL) as feedback control for ion implantation
TW201133536A (en) * 2010-03-16 2011-10-01 Kingstone Semiconductor Co Ltd Ions injection system and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4775796A (en) * 1987-01-06 1988-10-04 Purser Kenneth H Treating workpieces with beams
US5886356A (en) * 1997-03-17 1999-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic supervision system on the ion beam map for ion implantation process
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
GB2382716B (en) * 1998-07-21 2003-09-03 Applied Materials Inc Ion Implantation Beam Monitor
JP3341749B2 (ja) * 1999-12-28 2002-11-05 日新電機株式会社 イオン注入方法およびイオン注入装置
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Also Published As

Publication number Publication date
TW200402096A (en) 2004-02-01
EP1493171A2 (en) 2005-01-05
CN100401449C (zh) 2008-07-09
WO2003088299A2 (en) 2003-10-23
KR20040097335A (ko) 2004-11-17
WO2003088299A3 (en) 2004-01-08
CN1647236A (zh) 2005-07-27
KR100982850B1 (ko) 2010-09-16
JP2005522843A (ja) 2005-07-28
AU2003214435A8 (en) 2003-10-27
TWI319894B (en) 2010-01-21
AU2003214435A1 (en) 2003-10-27

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