CN100401449C - 衬底注入方法以及实施该方法的离子注入器 - Google Patents

衬底注入方法以及实施该方法的离子注入器 Download PDF

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Publication number
CN100401449C
CN100401449C CNB038081210A CN03808121A CN100401449C CN 100401449 C CN100401449 C CN 100401449C CN B038081210 A CNB038081210 A CN B038081210A CN 03808121 A CN03808121 A CN 03808121A CN 100401449 C CN100401449 C CN 100401449C
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CN
China
Prior art keywords
substrate
translation
scanning
grid
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038081210A
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English (en)
Chinese (zh)
Other versions
CN1647236A (zh
Inventor
阿德里安·默雷尔
伯纳德·哈里森
彼得·爱德华兹
彼得·金德斯利
逆濑卓郎
马文·法利
佐藤修
杰弗里·吕丁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/119,290 external-priority patent/US6956223B2/en
Priority claimed from US10/251,780 external-priority patent/US6908836B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN1647236A publication Critical patent/CN1647236A/zh
Application granted granted Critical
Publication of CN100401449C publication Critical patent/CN100401449C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • X-Ray Techniques (AREA)
CNB038081210A 2002-04-10 2003-03-21 衬底注入方法以及实施该方法的离子注入器 Expired - Fee Related CN100401449C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/119,290 US6956223B2 (en) 2002-04-10 2002-04-10 Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
US10/119,290 2002-04-10
US10/251,780 2002-09-23
US10/251,780 US6908836B2 (en) 2002-09-23 2002-09-23 Method of implanting a substrate and an ion implanter for performing the method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101520747A Division CN101197241A (zh) 2002-04-10 2003-03-21 衬底注入方法以及实施该方法的离子注入器

Publications (2)

Publication Number Publication Date
CN1647236A CN1647236A (zh) 2005-07-27
CN100401449C true CN100401449C (zh) 2008-07-09

Family

ID=29253953

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038081210A Expired - Fee Related CN100401449C (zh) 2002-04-10 2003-03-21 衬底注入方法以及实施该方法的离子注入器

Country Status (7)

Country Link
EP (1) EP1493171A2 (enExample)
JP (1) JP4347068B2 (enExample)
KR (1) KR100982850B1 (enExample)
CN (1) CN100401449C (enExample)
AU (1) AU2003214435A1 (enExample)
TW (1) TWI319894B (enExample)
WO (1) WO2003088299A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 (en) * 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
GB2409928B (en) * 2004-01-09 2007-03-21 Applied Materials Inc Improvements relating to ion implantation
US7473909B2 (en) * 2006-12-04 2009-01-06 Axcelis Technologies, Inc. Use of ion induced luminescence (IIL) as feedback control for ion implantation
TW201133536A (en) * 2010-03-16 2011-10-01 Kingstone Semiconductor Co Ltd Ions injection system and method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US5886356A (en) * 1997-03-17 1999-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic supervision system on the ion beam map for ion implantation process
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
WO2000005744A1 (en) * 1998-07-21 2000-02-03 Applied Materials, Inc. Ion implantation beam monitor
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4775796A (en) * 1987-01-06 1988-10-04 Purser Kenneth H Treating workpieces with beams
JP3341749B2 (ja) * 1999-12-28 2002-11-05 日新電機株式会社 イオン注入方法およびイオン注入装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US5886356A (en) * 1997-03-17 1999-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic supervision system on the ion beam map for ion implantation process
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
WO2000005744A1 (en) * 1998-07-21 2000-02-03 Applied Materials, Inc. Ion implantation beam monitor
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Also Published As

Publication number Publication date
TW200402096A (en) 2004-02-01
AU2003214435A1 (en) 2003-10-27
TWI319894B (en) 2010-01-21
EP1493171A2 (en) 2005-01-05
WO2003088299A2 (en) 2003-10-23
KR100982850B1 (ko) 2010-09-16
AU2003214435A8 (en) 2003-10-27
JP4347068B2 (ja) 2009-10-21
JP2005522843A (ja) 2005-07-28
WO2003088299A3 (en) 2004-01-08
KR20040097335A (ko) 2004-11-17
CN1647236A (zh) 2005-07-27

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Granted publication date: 20080709

CF01 Termination of patent right due to non-payment of annual fee