TWI319894B - A method of implanting a substrate and an ion implanter for performing the method - Google Patents

A method of implanting a substrate and an ion implanter for performing the method

Info

Publication number
TWI319894B
TWI319894B TW092108269A TW92108269A TWI319894B TW I319894 B TWI319894 B TW I319894B TW 092108269 A TW092108269 A TW 092108269A TW 92108269 A TW92108269 A TW 92108269A TW I319894 B TWI319894 B TW I319894B
Authority
TW
Taiwan
Prior art keywords
implanting
substrate
ion implanter
implanter
ion
Prior art date
Application number
TW092108269A
Other languages
English (en)
Chinese (zh)
Other versions
TW200402096A (en
Inventor
Murrell Adrian
Harrison Bernard
Edwards Peter
Kindersley Peter
Sakase Takao
Farley Marvin
Satoh Shu
Ryding Geoffrey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/119,290 external-priority patent/US6956223B2/en
Priority claimed from US10/251,780 external-priority patent/US6908836B2/en
Application filed filed Critical
Publication of TW200402096A publication Critical patent/TW200402096A/zh
Application granted granted Critical
Publication of TWI319894B publication Critical patent/TWI319894B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • X-Ray Techniques (AREA)
TW092108269A 2002-04-10 2003-04-10 A method of implanting a substrate and an ion implanter for performing the method TWI319894B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/119,290 US6956223B2 (en) 2002-04-10 2002-04-10 Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
US10/251,780 US6908836B2 (en) 2002-09-23 2002-09-23 Method of implanting a substrate and an ion implanter for performing the method

Publications (2)

Publication Number Publication Date
TW200402096A TW200402096A (en) 2004-02-01
TWI319894B true TWI319894B (en) 2010-01-21

Family

ID=29253953

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092108269A TWI319894B (en) 2002-04-10 2003-04-10 A method of implanting a substrate and an ion implanter for performing the method

Country Status (7)

Country Link
EP (1) EP1493171A2 (enExample)
JP (1) JP4347068B2 (enExample)
KR (1) KR100982850B1 (enExample)
CN (1) CN100401449C (enExample)
AU (1) AU2003214435A1 (enExample)
TW (1) TWI319894B (enExample)
WO (1) WO2003088299A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 (en) * 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
GB2409928B (en) * 2004-01-09 2007-03-21 Applied Materials Inc Improvements relating to ion implantation
US7473909B2 (en) * 2006-12-04 2009-01-06 Axcelis Technologies, Inc. Use of ion induced luminescence (IIL) as feedback control for ion implantation
TW201133536A (en) * 2010-03-16 2011-10-01 Kingstone Semiconductor Co Ltd Ions injection system and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4775796A (en) * 1987-01-06 1988-10-04 Purser Kenneth H Treating workpieces with beams
US5886356A (en) * 1997-03-17 1999-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic supervision system on the ion beam map for ion implantation process
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
GB2382716B (en) * 1998-07-21 2003-09-03 Applied Materials Inc Ion Implantation Beam Monitor
JP3341749B2 (ja) * 1999-12-28 2002-11-05 日新電機株式会社 イオン注入方法およびイオン注入装置
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Also Published As

Publication number Publication date
TW200402096A (en) 2004-02-01
EP1493171A2 (en) 2005-01-05
CN100401449C (zh) 2008-07-09
WO2003088299A2 (en) 2003-10-23
KR20040097335A (ko) 2004-11-17
WO2003088299A3 (en) 2004-01-08
CN1647236A (zh) 2005-07-27
KR100982850B1 (ko) 2010-09-16
JP2005522843A (ja) 2005-07-28
AU2003214435A8 (en) 2003-10-27
JP4347068B2 (ja) 2009-10-21
AU2003214435A1 (en) 2003-10-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees