JP4339000B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4339000B2
JP4339000B2 JP2003084808A JP2003084808A JP4339000B2 JP 4339000 B2 JP4339000 B2 JP 4339000B2 JP 2003084808 A JP2003084808 A JP 2003084808A JP 2003084808 A JP2003084808 A JP 2003084808A JP 4339000 B2 JP4339000 B2 JP 4339000B2
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Japan
Prior art keywords
insulating film
wiring
layer
semiconductor device
substrate
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Expired - Fee Related
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JP2003084808A
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English (en)
Japanese (ja)
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JP2004004663A5 (https=
JP2004004663A (ja
Inventor
徹 高山
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003084808A priority Critical patent/JP4339000B2/ja
Publication of JP2004004663A publication Critical patent/JP2004004663A/ja
Publication of JP2004004663A5 publication Critical patent/JP2004004663A5/ja
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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003084808A 2002-03-26 2003-03-26 半導体装置およびその作製方法 Expired - Fee Related JP4339000B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003084808A JP4339000B2 (ja) 2002-03-26 2003-03-26 半導体装置およびその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002087222 2002-03-26
JP2003084808A JP4339000B2 (ja) 2002-03-26 2003-03-26 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JP2004004663A JP2004004663A (ja) 2004-01-08
JP2004004663A5 JP2004004663A5 (https=) 2006-05-11
JP4339000B2 true JP4339000B2 (ja) 2009-10-07

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JP2003084808A Expired - Fee Related JP4339000B2 (ja) 2002-03-26 2003-03-26 半導体装置およびその作製方法

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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4720069B2 (ja) 2002-04-18 2011-07-13 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4530083B2 (ja) * 2002-06-07 2010-08-25 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4586997B2 (ja) * 2003-02-20 2010-11-24 セイコーエプソン株式会社 電気光学装置
JP2005235860A (ja) * 2004-02-17 2005-09-02 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4424078B2 (ja) * 2004-06-07 2010-03-03 カシオ計算機株式会社 表示パネル及びその製造方法
US8350466B2 (en) * 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP4792748B2 (ja) * 2005-01-14 2011-10-12 カシオ計算機株式会社 ディスプレイパネル
US7898623B2 (en) * 2005-07-04 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic device and method of driving display device
KR100683791B1 (ko) 2005-07-30 2007-02-20 삼성에스디아이 주식회사 박막 트랜지스터 기판 및 이를 구비한 평판 디스플레이장치
US20070126728A1 (en) * 2005-12-05 2007-06-07 Toppoly Optoelectronics Corp. Power circuit for display and fabrication method thereof
JP5120528B2 (ja) * 2006-03-29 2013-01-16 カシオ計算機株式会社 表示装置の製造方法
US8159449B2 (en) * 2006-04-14 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Display device having light-emitting element and liquid crystal element and method for driving the same
JP5167611B2 (ja) * 2006-08-24 2013-03-21 セイコーエプソン株式会社 電気光学装置および電子機器
US8372744B2 (en) * 2007-04-20 2013-02-12 International Business Machines Corporation Fabricating a contact rhodium structure by electroplating and electroplating composition
JP4924293B2 (ja) * 2007-08-29 2012-04-25 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5194892B2 (ja) * 2008-03-06 2013-05-08 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5313590B2 (ja) * 2008-08-29 2013-10-09 エルジー ディスプレイ カンパニー リミテッド 画像表示装置
KR101938125B1 (ko) 2008-12-17 2019-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
KR101769586B1 (ko) * 2010-09-24 2017-08-21 삼성디스플레이 주식회사 유기 발광 디스플레이 장치
JP2012119532A (ja) * 2010-12-01 2012-06-21 Seiko Epson Corp 薄膜トランジスタ形成用基板、半導体装置、電気装置
US20130207111A1 (en) * 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
JP2015052742A (ja) 2013-09-09 2015-03-19 パナソニックＩｐマネジメント株式会社 画像表示装置およびその製造方法
JP2015053444A (ja) * 2013-09-09 2015-03-19 パナソニックＩｐマネジメント株式会社 フレキシブル半導体装置およびその製造方法ならびに画像表示装置
JP6098017B2 (ja) * 2014-02-17 2017-03-22 エバーディスプレイ オプトロニクス（シャンハイ） リミテッド 薄膜トランジスタアレイ基板及びその製造方法
JP6656817B2 (ja) * 2014-04-25 2020-03-04 株式会社半導体エネルギー研究所 発光装置
JP2017028012A (ja) * 2015-07-17 2017-02-02 ラピスセミコンダクタ株式会社 半導体製造装置及び半導体製造方法

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