JP4334907B2 - 有機電界効果トランジスタ - Google Patents

有機電界効果トランジスタ Download PDF

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Publication number
JP4334907B2
JP4334907B2 JP2003142565A JP2003142565A JP4334907B2 JP 4334907 B2 JP4334907 B2 JP 4334907B2 JP 2003142565 A JP2003142565 A JP 2003142565A JP 2003142565 A JP2003142565 A JP 2003142565A JP 4334907 B2 JP4334907 B2 JP 4334907B2
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Japan
Prior art keywords
electrode
organic semiconductor
semiconductor film
contact
organic
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Expired - Fee Related
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JP2003142565A
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English (en)
Japanese (ja)
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JP2004047977A5 (enExample
JP2004047977A (ja
Inventor
哲夫 筒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003142565A priority Critical patent/JP4334907B2/ja
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Publication of JP2004047977A5 publication Critical patent/JP2004047977A5/ja
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Publication of JP4334907B2 publication Critical patent/JP4334907B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes

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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2003142565A 2002-05-21 2003-05-20 有機電界効果トランジスタ Expired - Fee Related JP4334907B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003142565A JP4334907B2 (ja) 2002-05-21 2003-05-20 有機電界効果トランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002146428 2002-05-21
JP2003142565A JP4334907B2 (ja) 2002-05-21 2003-05-20 有機電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JP2004047977A JP2004047977A (ja) 2004-02-12
JP2004047977A5 JP2004047977A5 (enExample) 2006-06-08
JP4334907B2 true JP4334907B2 (ja) 2009-09-30

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ID=31719592

Family Applications (1)

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JP2003142565A Expired - Fee Related JP4334907B2 (ja) 2002-05-21 2003-05-20 有機電界効果トランジスタ

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JP (1) JP4334907B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7504049B2 (en) * 2003-08-25 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device
US7511421B2 (en) 2003-08-25 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Mixed metal and organic electrode for organic device
JP4737964B2 (ja) * 2004-09-30 2011-08-03 三洋電機株式会社 有機半導体装置
KR100626036B1 (ko) * 2004-11-17 2006-09-20 삼성에스디아이 주식회사 유기 발광 소자 및 상기 유기 발광 소자의 제조방법
JP2006261486A (ja) * 2005-03-18 2006-09-28 Ricoh Co Ltd 有機薄膜トランジスタ及びそれを用いた画像表示装置
JP2007027326A (ja) * 2005-07-14 2007-02-01 Niigata Univ 有機電界効果トランジスタ
JP5328122B2 (ja) * 2007-08-20 2013-10-30 ローム株式会社 有機薄膜トランジスタ
FR2951028B1 (fr) * 2009-10-05 2012-08-03 Commissariat Energie Atomique Memoire organique a double grille et procede de realisation
ITMI20111447A1 (it) * 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente
TW201316580A (zh) * 2011-08-22 2013-04-16 Sumitomo Chemical Co 有機薄膜電晶體
US9735382B2 (en) * 2012-11-08 2017-08-15 Palo Alto Research Center Incorporated Circuit layout for thin film transistors in series or parallel
JP6210530B2 (ja) * 2013-06-04 2017-10-11 国立研究開発法人物質・材料研究機構 デュアルゲート有機薄膜トランジスタ

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Publication number Publication date
JP2004047977A (ja) 2004-02-12

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