JP4331973B2 - Method for manufacturing electronic circuit device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a technique for forming an electronic device such as an LSI and an interlayer insulating film of a printed board on which the electronic device is mounted.
[0002]
[Prior art]
In recent years, miniaturization of circuit configurations in electronic devices such as LSIs has progressed, and accordingly, low dielectric materials are being used as materials for interlayer insulating films. Examples of suitable low dielectric materials include polyphenyl ether (PPE) resin, Teflon (R) resin, and bismaleide resin. However, these low dielectric materials are weak in strength, and they are insulated alone. Since it is difficult to form a film as a film, it is formed in advance on a support such as a polyterephthalate ethylene (PET) film or a glass cloth to form an insulating substrate. When these low dielectric materials are used as insulating films, they are provided as insulating films in the state of an insulating substrate including a support.
[0003]
[Patent Document 1]
Japanese Patent Laid-Open No. 7-115274
[Problems to be solved by the invention]
As described above, when a low dielectric material is used as an insulating film in the state of an insulating substrate in which a low dielectric material such as PPE resin is formed on the support, the characteristics of the support itself are also included in the characteristics of the insulating film. Due to the presence of the body, the characteristics of the low dielectric material itself cannot be fully utilized. Even if an unnecessary portion such as a support is to be removed, using a chemical or the like as in the prior art requires an enormous amount of time and is not practical.
[0005]
In addition, when a low dielectric material is provided as an insulating film in the state of an insulating substrate without forming a low dielectric material on the support, the low dielectric material such as PPE resin is fragile, so the film thickness of the low dielectric material portion is limited. For example, if it is 20 μm or more, it can be handled, but if it is a thin film having a thickness less than that, handling becomes extremely difficult and it cannot be used in production.
[0006]
In addition, when a low dielectric material is applied in a liquid state (on which wirings or vias are formed) on a substrate, it is difficult to form a film having a thickness of 2 μm to 3 μm or more because it is liquid. As described above, a low dielectric material such as PPE resin is expected to make a great contribution to circuit miniaturization, but it is difficult to actually manufacture the film when a desired film thickness (for example, 10 μm) is formed. Have a problem.
[0007]
The present invention has been made in view of the above-described problems, and uses an insulating material, particularly an insulating material that is difficult to form alone, represented by a low dielectric material such as PPE resin, and has an insulating film with a desired film thickness. It is an object of the present invention to provide a method for manufacturing an electronic circuit device that can form the above.
[0008]
In addition, the present invention can make full use of the characteristics as an insulating material, and realizes a further increase in transmission speed of a transmission signal by applying a low dielectric material to a semiconductor component, a printed board, a package board, and the like. An object of the present invention is to provide a method for manufacturing an electronic circuit device.
[0009]
[Means for Solving the Problems]
The method for manufacturing an electronic circuit device according to the present invention uses an insulating substrate in which an insulating material is formed on a support when manufacturing an electronic circuit device in which a conductor is provided on the surface of a substrate. By attaching the insulating base to the surface of the substrate so as to be covered with the insulating material, and cutting using a cutting tool , all of the support, the surface layer of the insulating material, and the surface layer of the conductor are formed. Cutting at the same time and performing a flattening process so that the surface of the conductor and the surface of the insulating material are continuously flattened .
[0010]
An electronic circuit device of the present invention is an electronic circuit device including an insulating film made of an insulating material that covers a conductor provided on a substrate and has a property that it is difficult to form a single film. The surface and the surface of the insulating film are flattened so as to be flat continuously.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
-Basic outline of the present invention-
First, the basic outline of the present invention will be described.
The present inventor has proposed an insulating material (hereinafter referred to as a composition material) that is difficult to form as a single layer, typically a low dielectric material such as PPE resin, as an interlayer insulating film covering conductors such as wiring and via portions formed on a substrate. Although an insulating substrate formed by forming a support on a support is used, it is preferable to form an interlayer insulating film made of only an insulating material having a low dielectric constant by controlling film formation accurately. We searched for a method.
[0012]
As a result, instead of the CMP method, cutting using a cutting tool, which has been attracting attention as a method for simultaneously flattening the surface of a large number of fine conductors formed on a substrate at a low cost at high speed, is applied. I came up with it. According to this cutting process, even when a conductor is embedded in an insulating film on the substrate, it does not depend on the polishing rate of the metal and the insulator as in the CMP method. In addition, the conductive material and the insulating material are continuously cut, and both can be uniformly flattened without causing dishing or the like. Metals such as copper, aluminum, and nickel, and insulating materials such as polyimide are materials that can be easily cut with a cutting tool. As the conductive material and the insulating material, it is more preferable that the former is, for example, a ductile metal and the latter is, for example, a resin having a rigidity of 200 GPa or more.
[0013]
In the present invention, when an insulating material that is difficult to form is used, it is used in the state of an insulating base formed on a support. Therefore, when an insulating base is attached on a substrate, a conductor is formed in the insulating material that is difficult to form. Is stably embedded. Then, the above-described cutting technique is used to cut and remove all of the support that is unnecessary after the insulating substrate is pasted and the surface layer of the insulating material that is difficult to form. At this time, for example, by cutting until the surface of the conductor as the via portion is exposed, the via portion is covered and the upper surface is exposed, and the surface is uniformly flattened. An interlayer insulating film is formed. This interlayer insulating film can be formed as a thin film having a thickness of 20 μm or less. At this time, it is also preferable to cut the surface layer of the conductor together with the insulating base, and perform a planarization treatment so that the surface of the conductor and the surface of the film-forming insulating material are continuously flattened.
[0014]
Furthermore, the method of the present invention is applied to the multilayer wiring technology, and a series of processes of forming conductors such as wiring and via portions, attaching an insulating base, and cutting are executed a plurality of times to form a film that is difficult to form. It is also preferable to form a plurality of layers in which conductors are provided and the surfaces of which are planarized so that wirings are connected at via portions.
[0015]
-Specific embodiments-
Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings based on the basic outline described above.
[0016]
[First Embodiment]
Here, a case where the present invention is applied to an electronic circuit device formed on a substrate such as a semiconductor component (semiconductor substrate or semiconductor chip), a printed substrate, or a package substrate is disclosed.
FIG. 1 is a schematic cross-sectional view showing the method of manufacturing the electronic circuit device according to the present embodiment in the order of steps.
[0017]
First, as shown in FIG. 1A, various electronic circuits (not shown) and their wiring 2 and the wiring 2 are electrically connected to the substrate 1 such as a semiconductor substrate, a printed circuit board, and a package substrate. A pattern is formed in the connected via portion 3.
[0018]
Subsequently, an interlayer insulating film that covers the wiring 2 and the via portion 3 is formed.
Specifically, as shown in FIG. 1B, an insulating substrate 13 is used in which a PPE film 12 is formed by impregnating a PPE resin on both surfaces of a glass cloth 11 serving as a support. Then, the insulating base 13 is laminated on the substrate 1 with the one PPE film 12 and heat-treated. At this time, as shown in FIG. 1C, the insulating base 13 is in a state where the wiring 2 and the via part 3 are embedded with one PPE film 12.
[0019]
Subsequently, as shown in FIG. 1D, the insulating base 13 is cut using a cutting tool 10 made of a hard material such as diamond. Here, all of the glass cloth 11 and the surface layer of the PPE film 12 are cut and removed all at once until the upper surface of the via part 3 is exposed.
[0020]
By this cutting process, as shown in FIG. 1 (e), the PPE film 12 is formed by covering the wiring 2 and the via part 3 (so that the upper surface of the via part 3 is exposed) and uniformly flattening the surface. An interlayer insulating film 4 made of only is formed. At this time, on the substrate 1, a thin wiring layer having a thickness of, for example, 20 μm or less is formed by covering the wiring 2 and the via portion 3 (the upper surface of the via portion 3 is exposed) in the interlayer insulating film 4 and planarizing the surface. 5 will be formed.
[0021]
When performing the above-described cutting process, it is also preferable to cut the surface layer of the via part 3 together with the insulating base 13 so that the surface of the via part 3 and the surface of the PPE film 12 are continuously flattened. It is.
[0022]
As described above, according to the present embodiment, the interlayer insulating film 4 is formed by performing accurate film formation control using the PPE film 12 which is a low dielectric insulating material having weak strength and difficult to form a single film. Thus, an electronic circuit device that realizes further increase in the transmission speed of the transmission signal is realized.
[0023]
(Modification)
Here, a modification of the first embodiment will be described. In this case, as in the first embodiment, a method of manufacturing an electronic circuit device formed on various substrates is disclosed, but differs in that the configuration of the insulating base is different.
FIG. 2 is a schematic cross-sectional view showing the method of manufacturing the electronic circuit device according to this modification in the order of steps. In addition, the same code | symbol is described about the member etc. corresponding to FIG.
[0024]
First, as shown in FIG. 2A, various electronic circuits (not shown) and their wiring 2 and the wiring 2 are electrically connected to the substrate 1 such as a semiconductor substrate, a printed circuit board, and a package substrate. A pattern is formed in the connected via portion 3.
[0025]
Subsequently, an interlayer insulating film that covers the wiring 2 and the via portion 3 is formed.
Specifically, as shown in FIG. 2B, an insulating substrate 23 in which a PPE film 22 is formed on one side of a PET film 21 that serves as a support is used. Then, the insulating base 23 is laminated on the substrate 1 with the PPE film 22 and heat-treated. At this time, as shown in FIG. 2C, the insulating base 23 is in a state in which the wiring 2 and the via part 3 are embedded with the PPE film 22.
[0026]
Subsequently, as shown in FIG. 2D, the insulating base 23 is cut using a cutting tool 10 made of a hard material such as diamond. Here, all of the PET film 21 and the surface layer of the PPE film 22 are cut and removed all at once until the upper surface of the via portion 3 is exposed.
[0027]
By this cutting process, as shown in FIG. 2E, the PPE film 22 is formed by covering the wiring 2 and the via portion 3 (so that the upper surface of the via portion 3 is exposed) and uniformly flattening the surface. An interlayer insulating film 4 made of only is formed. At this time, on the substrate 1, a thin wiring layer having a thickness of, for example, 20 μm or less is formed by covering the wiring 2 and the via portion 3 (the upper surface of the via portion 3 is exposed) in the interlayer insulating film 4 and planarizing the surface. 5 will be formed.
[0028]
When performing the above-described cutting process, it is also preferable to cut the surface layer of the via part 3 together with the insulating base 13 so that the surface of the via part 3 and the surface of the PPE film 22 are continuously flattened. It is.
[0029]
[Second Embodiment]
Next, a second embodiment will be described. Here, as in the first embodiment, a method of manufacturing an electronic circuit device formed on various substrates is disclosed, but is different in that it has a multilayer wiring structure.
FIG. 3 is a schematic cross-sectional view showing the main steps of the method of manufacturing the electronic circuit device according to the present embodiment. In addition, the same code | symbol is described about the member etc. corresponding to FIG.
[0030]
In the present embodiment, first, through the series of steps of FIG. 1A to FIG. 1D in the first embodiment, as shown in FIG. 3A, the wiring 2 and the via portion 3 are connected (via portion). 3 is formed so that the upper surface is exposed), and the interlayer insulating film 4 made of only the PPE film 12 having the surface uniformly flattened is formed. At this time, on the substrate 1, a thin wiring layer having a thickness of, for example, 20 μm or less is formed by covering the wiring 2 and the via portion 3 (the upper surface of the via portion 3 is exposed) in the interlayer insulating film 4 and planarizing the surface. 5 will be formed. This wiring layer 5 constitutes the first layer of the multilayer wiring layer in the present embodiment.
[0031]
Subsequently, as shown in FIG. 3B, a series of steps similar to those in FIGS. 1A to 1D in the first embodiment are performed on the wiring layer 5 in the interlayer insulating film 4. A thin wiring layer 31 having a thickness of, for example, 20 μm or less is formed by covering the wiring 2 and the via portion 3 (the upper surface of the via portion 3 is exposed) and planarizing the surface. Here, the via portion 3 of the wiring layer 5 and the wiring 2 of the wiring layer 31 are electrically connected.
[0032]
Subsequently, as shown in FIG. 3C, a series of steps similar to those in FIGS. 1A to 1D in the first embodiment are performed on the wiring layer 31 to form the interlayer insulating film 4. A thin wiring layer 32 having a thickness of, for example, 20 μm or less is formed by covering the wiring 2 and the via portion 3 (the upper surface of the via portion 3 is exposed) and planarizing the surface. Here, the via portion 3 of the wiring layer 31 and the wiring 2 of the wiring layer 32 are electrically connected.
[0033]
Thus, an electronic circuit device including the multilayer wiring layer 41 in which the wiring layers 5, 31, and 32 are laminated is realized by repeatedly executing the series of steps. In the present embodiment, a multilayer wiring layer composed of three wiring layers has been illustrated, but it may be formed in two layers or four or more layers.
[0034]
As described above, according to the present embodiment, the interlayer insulating film 4 is formed by performing accurate film formation control using the PPE film 12 which is a low dielectric insulating material having weak strength and difficult to form a single film. The multilayer wiring layer can be formed with good controllability by using this interlayer insulating film formation technology, and the transmission speed of the transmission signal can be further increased. An electronic circuit device is realized.
[0035]
Hereinafter, various aspects of the present invention will be collectively described as supplementary notes.
[0036]
(Appendix 1) When manufacturing an electronic circuit device in which a conductor is provided on the surface of a substrate,
By using an insulating substrate in which an insulating material is formed on a support, the step of attaching the insulating substrate to the surface of the substrate so that the conductor is covered in the insulating material, and cutting using a cutting tool And a flattening process so that the surface of the conductor is exposed.
[0037]
(Supplementary note 2) The method of manufacturing an electronic circuit device according to supplementary note 1, wherein the insulating base is formed by forming the insulating material on or below the support.
[0038]
(Additional remark 3) At the time of the said cutting, at least the said support body and the surface layer of the said insulating material are removed, and the planarization process is carried out so that the surface of the said conductor may be exposed and the surface of the said insulating material may become at least flat The manufacturing method of the electronic circuit device according to appendix 1 or 2, characterized in that:
[0039]
(Additional remark 4) The manufacturing method of the electronic circuit device of Additional remark 3 characterized by the film thickness of the said insulating material after the said planarization process being 20 micrometers or less.
[0040]
(Additional remark 5) In the said cutting process, the surface layer of the said conductor is removed with the surface layer of the said insulating material, and it planarizes so that the surface of the said conductor and the surface of the said insulating material may become flat continuously. The method for manufacturing an electronic circuit device according to appendix 3 or 4, wherein the electronic circuit device is manufactured.
[0041]
(Additional remark 6) The said insulation base | substrate uses a polyterephthalate ethylene film as the said support body, the said insulating material is formed on the said polyterephthalate ethylene film, or uses a glass cloth, the said glass 6. The method of manufacturing an electronic circuit device according to any one of appendices 1 to 5, wherein the cloth is impregnated with the insulating material.
[0042]
(Supplementary note 7) The electron according to any one of supplementary notes 1 to 6, wherein the insulating material is a kind selected from a polyphenyl ether resin, a Teflon (R) resin, and a bismaleide resin. A method of manufacturing a circuit device.
[0043]
(Appendix 8) Any one of Appendices 1 to 7, wherein the series of steps are executed a plurality of times to form a plurality of stacked layers in which the conductor is provided and the surface is flattened in the insulating material. 2. A method for manufacturing an electronic circuit device according to item 1.
[0044]
(Appendix 9) An electronic circuit device including an insulating film made of an insulating material that covers a conductor provided on a substrate and has a property that it is difficult to form a single film,
An electronic circuit device, wherein the surface of the conductor and the surface of the insulating film are flattened so as to be flat continuously.
[0045]
(Supplementary note 10) The electronic circuit device according to supplementary note 9, wherein the thickness of the insulating film is 20 μm or less.
[0046]
(Supplementary note 11) The electronic circuit device according to supplementary note 9 or 10, wherein the insulating film is made of one selected from a polyphenyl ether resin, a Teflon (R) resin, and a bismaleide resin.
[0047]
(Supplementary note 12) The electronic circuit device according to any one of supplementary notes 9 to 11, wherein a plurality of layers in which the conductor is provided and the surface is flattened are stacked in the insulating material.
[0048]
【The invention's effect】
According to the present invention, it is possible to form an insulating film having a desired film thickness using an insulating material, particularly an insulating material that is difficult to form alone, such as a low dielectric material such as PPE resin.
[0049]
In addition, according to the present invention, the characteristics as an insulating material can be fully utilized, and a low dielectric material can be applied to a semiconductor component, a printed circuit board, a package substrate, etc. to further increase the transmission speed of a transmission signal. It can be realized.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view showing a method of manufacturing an electronic circuit device according to a first embodiment in the order of steps.
FIG. 2 is a schematic cross-sectional view showing a method of manufacturing an electronic circuit device according to a modification of the first embodiment in the order of steps.
FIG. 3 is a schematic cross-sectional view showing a method of manufacturing the electronic circuit device according to the second embodiment in the order of steps.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate 2 Wiring 3 Via part 4 Interlayer insulating film 5, 31, 32 Wiring layer 11 Glass cloth 12, 22 PPE film 13, 23 Insulating base 21 PET film 41 Multilayer wiring layer

Claims (5)

When manufacturing an electronic circuit device in which a conductor is provided on the surface of a substrate,
Using an insulating base formed by forming an insulating material on a support, and bonding the insulating base to the surface of the substrate so that the conductor is covered in the insulating material;
By cutting with a cutting tool , all of the support, the surface layer of the insulating material, and the surface layer of the conductor are simultaneously cut so that the surface of the conductor and the surface of the insulating material are continuously flat. And a flattening process. A method for manufacturing an electronic circuit device, comprising:   2. The method of manufacturing an electronic circuit device according to claim 1, wherein the insulating base is formed by forming the insulating material on the support body or above and below the support body.   The insulating substrate uses a polyethylene terephthalate film as the support, and the insulating material is formed on the polyethylene terephthalate ethylene film, or a glass cloth is used, and the glass cloth is insulated with the insulating material. 3. The method of manufacturing an electronic circuit device according to claim 1, wherein the material is impregnated.   4. The electronic circuit device according to claim 1, wherein the insulating material is one selected from a polyphenyl ether resin, a Teflon (R) resin, and a bismaleide resin. 5. Production method.   5. The process according to claim 1, wherein the series of steps are performed a plurality of times, and a plurality of layers in which the conductor is provided and the surface is flattened are formed in the insulating material. The manufacturing method of the electronic circuit device of description.

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