JP4326275B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4326275B2
JP4326275B2 JP2003189633A JP2003189633A JP4326275B2 JP 4326275 B2 JP4326275 B2 JP 4326275B2 JP 2003189633 A JP2003189633 A JP 2003189633A JP 2003189633 A JP2003189633 A JP 2003189633A JP 4326275 B2 JP4326275 B2 JP 4326275B2
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Japan
Prior art keywords
leads
common
island
lead
integrated circuit
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Expired - Fee Related
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JP2003189633A
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JP2005026415A (ja
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公 落合
真人 武
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2003189633A priority Critical patent/JP4326275B2/ja
Priority to TW93115614A priority patent/TWI267147B/zh
Priority to KR20040047367A priority patent/KR100585896B1/ko
Priority to CNB2004100617046A priority patent/CN100346476C/zh
Priority to US10/881,561 priority patent/US7102211B2/en
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    • H—ELECTRICITY
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Description

【０００１】
【発明の属する技術分野】
本発明は個別リードと共通リードとを有するリードフレームを用いて樹脂封止した半導体装置に関し、特に放熱効果を高めるために共通リードのアウター部分に連結部を設け半田で共通リードを橋絡した半導体装置に関する。
【０００２】
【従来の技術】
最近、電子機器の小型化に対応するために、半導体装置の高密度化が要求されてきている。そのために種々の回路がＬＳＩ化された集積回路チップをリードフレームに取付け、そのリードフレームに取付けられた集積回路チップを樹脂で封止することが行われている。
【０００３】
図５及び図６は集積回路チップが取付けられた従来のリードフレームの平面図及び斜視図である。
【０００４】
リードフレーム１は集積回路チップ２が取付けられるアイランド３と外部電極端子となる複数のリード４Ａ、４Ｂ、４Ｃ・・・、５Ａ、５Ｂ、５Ｃ・・・がＤＩＰ状に両側に一定の間隔で配列されている。
【０００５】
リードフレーム１のアイランド３には種々の回路がＬＳＩ化された集積回路チップ２が取付けられる。集積回路チップ２に設けられた各電極６Ａ、６Ｂ、６Ｃ・・・、７Ａ、７Ｂ、７Ｃ・・・はリード４Ａ、４Ｂ、４Ｃ・・・、５Ａ、５Ｂ、５Ｃ・・・のアイランド３に近接した先端に金属細線８Ａ、８Ｂ、８Ｃ・・・、９Ａ、９Ｂ、９Ｃ・・・でワイヤ−ボンドされて接続される。
【０００６】
前述した集積回路チップ２の電極６Ａ、６Ｂ、６Ｃ・・・、７Ａ、７Ｂ、７Ｃ・・・をアウターリード４Ａ、４Ｂ、４Ｃ・・・、５Ａ、５Ｂ、５Ｃ・・・にワイヤーボンドした後、リードフレーム１と集積回路チップ２とをリード４Ａ、４Ｂ、４Ｃ・・・、５Ａ、５Ｂ、５Ｃ・・・のアウター部分が外部に突出するように樹脂１０でモールドし半導体装置１１を完成する。
【０００７】
図７に示すように、完成された半導体装置１１は例えばテレビ受像回路等に使用されるため、予め外部回路が配線された印刷配線基板１２の印刷配線１４Ａ、１４Ｂ、１４Ｃ・・・に湾曲されたリード４Ａ、４Ｂ、４Ｃ・・・、５Ａ、５Ｂ、５Ｃ・・・の先端部がハンダ付けされる。
【０００８】
【特許文献１】
特開２００１−２４００１号公報
【０００９】
【発明が解決しようとする課題】
前述した半導体装置では、集積回路チップが年々大型化されると共に電力回路まで集積化されているため、電力回路の発熱により熱破壊される恐れがある。そのため放熱をよくする必要があるが、集積回路チップ及びそれを固着するアイランドが樹脂で一体にモールドされているため十分に放熱ができない問題点を有していた。また、リードフレームの多ピン化と形状の薄型によるリードフレームの薄型化が更に放熱性を阻害することにも繋がる。
【００１０】
【課題を解決するための手段】
本発明は上述した問題点に鑑みて為され、集積回路チップが固着されるアイランドと、該アイランドの近傍まで先端部を延在させた複数の個別リードと、前記アイランドに連結され外部に延在され且つ隣接して設けた複数の共通リードと、前記集積回路チップ、前記アイランド及び前記両リードのインナー部分を樹脂モールドした半導体装置において、前記共通リードのアウター部分に連結部を設け、半田付けの際に前記共通リードのアウター部分を前記連結部を用いて半田で橋絡することを特徴とする。
【００１１】
【発明の実施の形態】
図１〜図４を参照して、本発明の半導体装置を説明する。
【００１２】
図１は本発明に用いるリードフレームを説明する平面図である。
【００１３】
リードフレーム２１は集積回路チップ２２が取付けられるアイランド２３と、外部電極端子となる複数の個別リード２４Ａ、２４Ｂ、２４Ｃ・・・、２５Ａ、２５Ｂ、２５Ｃ・・・およびアイランド２３に連結された複数の共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑとで構成されている。
【００１４】
アイランド２３はリードフレームの各単位の中央に位置し、その両側にＤＩＰ状に複数の個別リード２４Ａ、２４Ｂ、２４Ｃ・・・、２５Ａ、２５Ｂ、２５Ｃ・・・と複数の共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑとが一定の間隔で配列されている。また、複数の共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑは一端をアイランド２３に連結されており、他端はアウター部として外部に突出させるために延在されている。複数の共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑはアイランド２３の両側の列の中央に隣接して配列され、その両側に複数の個別リード２４Ａ、２４Ｂ、２４Ｃ・・・、２５Ａ、２５Ｂ、２５Ｃ・・・が同数ずつ配列される。すなわち、図１では右側に個別リード２４Ａ、２４Ｂ、２４Ｃ、２４Ｄと並び、共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑが並び、更に個別リード２４Ｅ、２４Ｆ、２４Ｇ、２４Ｈが並んでいる。左側は同様に、個別リード２５Ａ、２５Ｂ、２５Ｃ、２５Ｄと並び、共通リード２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑが並び、更に個別リード２５Ｅ、２５Ｆ、２５Ｇ、２５Ｈが並んでいる。
【００１５】
本発明の特徴は、アウター部分の共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑを連結部３０で接続している点にある。通常各リード間は橋絡細条２９で連結されて、樹脂モールドの際の樹脂の漏れを止めている。本発明では更に、この橋絡細条２９とアウター部分の先端との中間位置に共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑのみに連結部３０を設けている。この共通リードはすべてがアイランド２３に一端を連結されているので、電位的には共通電位（アース電位）となり、連結部３０を設けても使用上の問題は生じない。
【００１６】
上述したリードフレーム２１のアイランド２３には前述した集積回路チップ２２が銀ペースト等の導電性接着剤を用いて固着される。集積回路チップ２２に設けられた多くの電極２６Ａ、２６Ｂ、２６Ｃ・・・２７Ａ、２７Ｂ、２７Ｃ・・・・・・は個別リード２４Ａ、２４Ｂ、２４Ｃ・・・、２５Ａ、２５Ｂ、２５Ｃ・・・に金属細線２８でワイヤ−ボンドされる。また、アース電位となる電極２６Ｍ、２６Ｎ…、２７Ｍ、２７Ｎ…はアイランド２３と共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑとの連結部分に金属細線２８で接続される。
【００１７】
前述した集積回路チップ２２の電極２６Ａ、２６Ｂ、２６Ｃ・・・、２７Ａ、２７Ｂ、２７Ｃ・・・を個別リード２４Ａ、２４Ｂ、２４Ｃ・・・、２５Ａ、２５Ｂ、２５Ｃ・・・及び共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑとの連結部分に金属細線２８でワイヤーボンディングした後、トランスファーモールドを行い、リードフレーム２１と集積回路チップ２２と各リードのインナー部分を樹脂３１で覆い、連結細条２９より先のアウター部分が樹脂３１から突出するようにパッケージに収納し半導体装置３２を完成している。なお、連結細条２９はモールド後に切断除去され、個別リード２４Ａ、２４Ｂ、２４Ｃ・・・、２５Ａ、２５Ｂ、２５Ｃ・・・は電気的に独立する。従って、共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑと共通リード２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑにそれぞれ連結部３０が残される。
【００１８】
図２に示すように、樹脂３１の両側に突出した個別リード２４Ａ、２４Ｂ、２４Ｃ・・・及び共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑと、個別リード２５Ａ、２５Ｂ、２５Ｃ・・・及び共通リード２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑは湾曲して整形されてガルウィング形状となる。この際に、連結部３０は各共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑの垂直部分に位置している。
【００１９】
図３に示すように、完成された半導体装置３２は個別リード２４Ａ、２４Ｂ、２４Ｃ・・・、２５Ａ、２５Ｂ、２５Ｃ・・・と共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ、２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑとが印刷配線基板３３の対応する印刷配線３４Ａ、３４Ｂ、３４Ｃ・・・にハンダ付けされる。
【００２０】
この際に図４に示すように、連結部３０で連結されている共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ及び２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑのアウター部分には湾曲部にハンダ３５が多く付着され、共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ及び共通リード２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑ間のリード間隔スペースを連結部３０を介してハンダ３５の表面張力により橋絡して付着され、共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ及び共通リード２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑとハンダ３５とで１つの大きなリードとして働く。そのため共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ及び共通リード２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑの表面積が大きく且つ厚くなる。そのため集積回路チップで発熱された熱はアイランド２３からハンダ３５が盛られた共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ及び共通リード２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑ間を通って外部に放熱される。
【００２１】
実際に実験した結果、リードフレーム２１の共通リード２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ及び共通リード２５Ｍ、２５Ｎ、２５Ｐ、２５Ｑを連絡部３０で連絡したものは、連絡部３０を設けない従来のものに比べて、放熱効果が２倍以上良くなることが確認された。
【００２２】
【発明の効果】
本発明の半導体装置によれば、種々の回路がＬＳＩ化された集積回路チップをアイランドに固着した場合でも集積回路チップからの発熱は共通リード及び連結部を利用してその共通リード間を橋絡したハンダにより効率よく外部に放熱できるので、集積回路チップが熱破壊するのを防止することができる。
【００２３】
また、リードフレームを多ピン化してもあるいは極めて薄い金属板から形成しても橋絡したハンダの働きで共通リードの幅を大きくする効果を得られ、また共通リードの厚みを等価的に厚くできるので、多ピンのリードフレームへの適用を図れる。
【００２４】
更に、個別リード及び共通リードをガルウィング形状にすることで、共通リードの湾曲部に多くのハンダを付着でき、そのハンダの表面張力を利用して共通リードのリード間をハンダ付け時に同時に橋絡出来る。
【図面の簡単な説明】
【図１】本発明の半導体装置に用いられたリードフレームの平面図である。
【図２】本発明の半導体装置の斜視図である。
【図３】本発明の半導体装置を印刷配線基板に取付けたの斜視図である。
【図４】本発明の半導体装置を印刷配線基板に取付けた一部分の拡大した斜視図である。
【図５】 従来の半導体装置に用いられたリードフレームの平面図である。
【図６】従来の半導体装置の斜視図である。
【図７】従来の半導体装置を印刷配線基板に取付けたの斜視図である。
【符号の説明】
２１ リードフレーム
２２ 集積回路チップ
２３ アイランド
２４Ａ、２４Ｂ、２４Ｃ・ 個別リード
２４Ｍ、２４Ｎ、２４Ｐ、２４Ｑ 共通リード
３０ 連結部
３２ 半導体装置
３３ 印刷配線基板
３４Ａ、３４Ｂ・・・ 印刷配線

Claims (1)

  1. 集積回路チップが固着されるアイランドと、該アイランドの近傍まで先端部を延在させた複数の個別リードと、前記アイランドに連結され且つ外部に延在され隣接して設けた複数の共通リードと、前記集積回路チップ、前記アイランド及び前記両リードのインナー部分を樹脂モールドした半導体装置において、ガルウィング形状をなすよう湾曲し整形され、且つアース電位となる電極に接続される前記共通リードと個別リードとを同一幅且つ一定間隔で配列し、前記共通リードのアウター部分の印刷配線に半田付けする先端と前記樹脂モールドの部分との間に連結部を設けると共に、これら共通リードを印刷配線に半田付けする際に前記共通リードのアウター部分を前記連結部と湾曲された部分とを用いて半田で表面積が大きく且つ厚くなるように橋絡し、前記共通リードを半田で表面積が大きく且つ厚くなるようにし、放熱効果を向上したことを特徴とする半導体装置。
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CNB2004100617046A CN100346476C (zh) 2003-07-01 2004-06-30 半导体装置及混合集成电路装置
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US8116102B2 (en) * 2007-12-26 2012-02-14 Infineon Technologies Ag Integrated circuit device and method of producing
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DE102010002950A1 (de) * 2010-03-17 2011-09-22 Robert Bosch Gmbh Schaltungsanordnung und zugehöriges steuergerät für ein kraftfahrzeug
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US11437304B2 (en) 2014-11-06 2022-09-06 Semiconductor Components Industries, Llc Substrate structures and methods of manufacture
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