JP4293920B2 - Substrate processing apparatus, substrate processing method, and substrate manufacturing method - Google Patents

Substrate processing apparatus, substrate processing method, and substrate manufacturing method Download PDF

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JP4293920B2
JP4293920B2 JP2004026330A JP2004026330A JP4293920B2 JP 4293920 B2 JP4293920 B2 JP 4293920B2 JP 2004026330 A JP2004026330 A JP 2004026330A JP 2004026330 A JP2004026330 A JP 2004026330A JP 4293920 B2 JP4293920 B2 JP 4293920B2
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air
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JP2004333110A (en
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善弘 森口
貴久 石田
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Hitachi High Tech Corp
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Description

本発明は、エアナイフを用いて基板へエアを吹き付けることにより基板を乾燥させる基板処理装置、基板処理方法、及びそれらを用いた基板の製造方法に係り、特に大型の基板の乾燥に好適な基板処理装置、基板処理方法、及びそれらを用いた基板の製造方法に関する。   The present invention relates to a substrate processing apparatus and a substrate processing method for drying a substrate by blowing air onto the substrate using an air knife, and a substrate manufacturing method using them, and particularly suitable for drying a large substrate. The present invention relates to an apparatus, a substrate processing method, and a substrate manufacturing method using them.

液晶ディスプレイ装置やプラズマディスプレイ装置等のようなフラットパネルディスプレイ装置用のパネル基板の製造工程では、基板上に回路パターンやカラーフィルタ等を形成するため、現像やエッチング等の薬液処理が行われる。そして、薬液処理の前又は後には、洗浄水(純水)を用いた基板の洗浄、及び洗浄後の基板の乾燥が必要である。基板の洗浄及び乾燥を含むこれらの一連の処理は、ローラコンベア等の移動手段を用いて基板を移動しながら行われることが多く、基板の乾燥は、エアナイフを用いて基板へエアを吹き付けることにより、洗浄水等の処理液を基板の表面から押し流して除去するのが一般的である。   In a manufacturing process of a panel substrate for a flat panel display device such as a liquid crystal display device or a plasma display device, chemical processing such as development and etching is performed to form a circuit pattern, a color filter, and the like on the substrate. Before or after the chemical treatment, it is necessary to clean the substrate using cleaning water (pure water) and dry the substrate after cleaning. These series of processes including the cleaning and drying of the substrate are often performed while moving the substrate using a moving means such as a roller conveyor, and the drying of the substrate is performed by blowing air onto the substrate using an air knife. In general, a treatment liquid such as cleaning water is removed from the surface of the substrate.

このように基板を移動しながら基板に対して一連の処理を行うものとして、特許文献1に記載の技術がある。また、エアナイフを用いて基板の乾燥を行うものとして、特許文献2及び特許文献3に記載の技術がある。
特開2002−252200号公報 特開2001−50660号公報 特開2001−284777号公報
As a technique for performing a series of processing on a substrate while moving the substrate in this way, there is a technique described in Patent Document 1. Moreover, there exists a technique of patent document 2 and patent document 3 as drying a board | substrate using an air knife.
JP 2002-252200 A JP 2001-50660 A JP 2001-284777 A

エアナイフを用いた乾燥では、基板の表面に洗浄水等の処理液が偏在すると、処理液の均一な除去が行われず、基板の表面に乾燥むらが発生する。このため、従来、エアナイフを用いて基板を均一に乾燥させるためには、乾燥前の基板の表面に処理液の膜を均一に形成する必要があった。しかしながら、近年のフラットパネルディスプレイ装置の大型化に伴って基板の面積が大きくなると、基板の表面に処理液の膜を均一に形成するためには大量の処理液が必要となってきた。   In drying using an air knife, if a processing liquid such as cleaning water is unevenly distributed on the surface of the substrate, the processing liquid is not uniformly removed, and uneven drying occurs on the surface of the substrate. For this reason, conventionally, in order to uniformly dry a substrate using an air knife, it has been necessary to uniformly form a film of a treatment solution on the surface of the substrate before drying. However, when the area of the substrate increases with the recent increase in the size of the flat panel display device, a large amount of processing liquid has been required to uniformly form a film of the processing liquid on the surface of the substrate.

また、基板の中には、表面が洗浄水(純水)を弾く撥水性を強く有するものがある。例えば、液晶ディスプレイ装置のカラーフィルタの製造では、ガラス基板上に、光遮断用のブラックマトリクス、カラー表示用のRGBの着色パターン、着色パターンを保護する透明な保護膜、及び液晶を駆動するための透明電極膜が形成される。これらのうち、特に、ブラックマトリクスや着色パターンの形成に使用されるレジン膜は、強い撥水性を有する。このため、ブラックマトリクスや着色パターンを形成する際、基板の表面は強い撥水性を有することとなる。   Some of the substrates have a strong water repellency in which the surface repels cleaning water (pure water). For example, in the manufacture of a color filter for a liquid crystal display device, on a glass substrate, a black matrix for blocking light, an RGB coloring pattern for color display, a transparent protective film for protecting the coloring pattern, and a liquid crystal for driving the liquid crystal A transparent electrode film is formed. Among these, in particular, a resin film used for forming a black matrix or a colored pattern has strong water repellency. For this reason, when forming a black matrix or a colored pattern, the surface of the substrate has a strong water repellency.

表面の撥水性が強い基板は、表面に洗浄水の膜を均一に形成することが難しく、基板の表面には洗浄水の膜が途切れた部分が発生する。そして、エアナイフからのエアで吹き飛ばされた洗浄水の粒が洗浄水の膜の途切れた部分に付着し、ウォーターマークと呼ばれる乾燥むらが発生する。従来、このようなウォーターマークはある程度許容されていたが、基板の表面に形成する回路パターン等のファインピッチ化に伴い、このようなウォーターマークも外観上の問題及び表面抵抗のばらつきの原因として無視できないものとなってきた。   A substrate having a strong surface water repellency makes it difficult to uniformly form a cleaning water film on the surface, and a portion of the cleaning water film is interrupted on the surface of the substrate. Then, the cleaning water particles blown off with the air from the air knife adhere to the discontinuous portion of the cleaning water film, resulting in uneven drying called a watermark. Conventionally, such a watermark has been allowed to some extent, but with the fine pitch of circuit patterns formed on the surface of the substrate, such a watermark is also ignored as a cause of appearance problems and variations in surface resistance. It has become impossible.

本発明の課題は、エアナイフを用いて基板の乾燥を行う際に、処理液の使用量を低減することである。   The subject of this invention is reducing the usage-amount of a process liquid, when drying a board | substrate using an air knife.

また、本発明の課題は、エアナイフを用いて基板の乾燥を行う際に、ウォーターマークの発生を防止して、基板をむらなく均一に乾燥させることである。   Another object of the present invention is to prevent the generation of watermarks and dry the substrate evenly when drying the substrate using an air knife.

さらに、本発明の課題は、エアナイフを用いて基板の乾燥を行う際に、乾燥時間を短縮させて、乾燥むらを少なくすることである。   Furthermore, the subject of this invention is shortening drying time and drying unevenness, when drying a board | substrate using an air knife.

さらに、本発明の課題は、乾燥むらが少なく品質の高い基板を製造することである。   Furthermore, an object of the present invention is to produce a high-quality substrate with little drying unevenness.

本発明の基板処理装置は、複数のローラにより基板を移動する基板移動手段と、基板移動手段により移動される基板の上方に基板と所定の間隔で設けられた第1の板状の部材と、第1の板状の部材と基板との隙間に常温より高い温度の処理液を充填して、第1の板状の部材の下方を通過した基板の表面に処理液の膜を形成する第1の処理液通路と、第1の板状の部材の下方を通過した基板の表面へ常温より高い温度のエアを吹き付けて、基板の表面から処理液を押し流す第1のエアナイフとを備えたものである。 The substrate processing apparatus of the present invention includes a substrate moving means for moving a substrate by a plurality of rollers, a first plate-like member provided at a predetermined distance from the substrate above the substrate moved by the substrate moving means, First, a treatment liquid having a temperature higher than room temperature is filled in a gap between the first plate-shaped member and the substrate, and a film of the treatment liquid is formed on the surface of the substrate that has passed under the first plate-shaped member. And a first air knife that blows air at a temperature higher than normal temperature onto the surface of the substrate that has passed under the first plate-like member and pushes the treatment liquid from the surface of the substrate. is there.

また、本発明の基板処理方法は、複数のローラにより基板を移動しながら、第1の板状の部材を基板の上方に基板と所定の間隔で設け、第1の板状の部材と基板との隙間に常温より高い温度の処理液を充填して、第1の板状の部材の下方を通過した基板の表面に処理液の膜を形成し、第1の板状の部材の下方を通過した基板の表面へ第1のエアナイフから常温より高い温度のエアを吹き付けて、基板の表面から処理液を押し流すものである。 Further, in the substrate processing method of the present invention, the first plate-shaped member is provided above the substrate at a predetermined interval while the substrate is moved by a plurality of rollers , and the first plate-shaped member and the substrate are provided. Is filled with a processing liquid having a temperature higher than room temperature, a film of the processing liquid is formed on the surface of the substrate that has passed under the first plate-like member, and passes under the first plate-like member. The air having a temperature higher than room temperature is blown from the first air knife to the surface of the substrate, and the processing liquid is swept away from the surface of the substrate.

第1の板状の部材を基板の上方に基板と所定の間隔で設け、第1の板状の部材と基板との隙間に処理液を充填することにより、少量の処理液で基板の表面に処理液の膜を均一に形成することができる。また、基板の表面は第1の板状の部材で覆われているため、第1のエアナイフからのエアで吹き飛ばされた処理液の粒が基板の表面に付着せず、ウォーターマークが発生するのを防止することができる。   A first plate-like member is provided above the substrate at a predetermined interval from the substrate, and a treatment liquid is filled in a gap between the first plate-like member and the substrate, so that a small amount of the treatment liquid is applied to the surface of the substrate. A film of the treatment liquid can be formed uniformly. Further, since the surface of the substrate is covered with the first plate-like member, the treatment liquid particles blown off with the air from the first air knife do not adhere to the surface of the substrate, and a watermark is generated. Can be prevented.

さらに、本発明の基板処理装置は、複数のローラが入る複数の開口を有し、複数のローラにより移動される基板の下方に、基板から複数のローラの直径より小さい間隔で設けられた第2の板状の部材と、第2の板状の部材と基板との隙間に常温より高い温度の処理液を充填して、第2の板状の部材の上方を通過した基板の裏面に処理液の膜を形成する第2の処理液通路と、第2の板状の部材の上方を通過した基板の裏面へ常温より高い温度のエアを吹き付けて、基板の裏面から処理液を押し流す第2のエアナイフとを備えたものである。 Furthermore, the substrate processing apparatus of the present invention has a plurality of openings into which a plurality of rollers are inserted, and is provided below the substrate moved by the plurality of rollers at a distance smaller than the diameter of the plurality of rollers from the substrate. A processing liquid having a temperature higher than room temperature is filled in the gap between the plate-shaped member and the second plate-shaped member and the substrate, and the processing liquid is applied to the back surface of the substrate that has passed above the second plate-shaped member. The second processing liquid passage for forming the film and the back surface of the substrate that has passed over the second plate-shaped member are blown with air having a temperature higher than room temperature to push the processing liquid from the back surface of the substrate. It is equipped with an air knife.

また、本発明の基板処理方法は、複数のローラが入る複数の開口を有する第2の板状の部材を、複数のローラにより移動される基板の下方に、基板からローラの直径より小さい間隔で設け、第2の板状の部材と基板との隙間に常温より高い温度の処理液を充填して、第2の板状の部材の上方を通過した基板の裏面に処理液の膜を形成し、第2の板状の部材の上方を通過した基板の裏面へ第2のエアナイフから常温より高い温度のエアを吹き付けて、基板の裏面から処理液を押し流すものである。 In the substrate processing method of the present invention, the second plate-like member having a plurality of openings into which a plurality of rollers enter is placed below the substrate moved by the plurality of rollers at an interval smaller than the diameter of the rollers. provided, filled with a treatment liquid higher than room temperature in the gap between the second plate member and the substrate, forming a film of the processing liquid to the back surface of the substrate passing above the second plate-like member Then, air having a temperature higher than room temperature is blown from the second air knife to the back surface of the substrate that has passed over the second plate-shaped member, and the processing liquid is washed away from the back surface of the substrate.

複数のローラが入る複数の開口を有する第2の板状の部材を、複数のローラにより移動される基板の下方に、基板から複数のローラの直径より小さい間隔で設け、第2の板状の部材と基板との隙間に処理液を充填することにより、少量の処理液で基板の裏面に処理液の膜を均一に形成することができる。また、基板の裏面は第2の板状の部材で覆われているため、第2のエアナイフからのエアで吹き飛ばされた処理液の粒が基板の裏面に付着せず、ウォーターマークが発生するのを防止することができる。 A second plate-like member having a plurality of openings for receiving a plurality of rollers is provided below the substrate moved by the plurality of rollers at an interval smaller than the diameter of the plurality of rollers . By filling the gap between the member and the substrate with the treatment liquid, a film of the treatment liquid can be uniformly formed on the back surface of the substrate with a small amount of the treatment liquid. Further, since the back surface of the substrate is covered with the second plate-like member, the particles of the processing liquid blown off with the air from the second air knife do not adhere to the back surface of the substrate, and a watermark is generated. Can be prevented.

ここで、第1の処理液通路から供給される処理液の流量を調整することにより、第1の板状の部材と基板との隙間に充填されて基板の側面から流れ出た処理液が、第2の板状の部材と基板との隙間にも充填されるようにして、第1の処理液通路を第2の処理液通路と兼用してもよい。   Here, by adjusting the flow rate of the processing liquid supplied from the first processing liquid passage, the processing liquid that fills the gap between the first plate-shaped member and the substrate and flows out from the side surface of the substrate is The first processing liquid passage may also be used as the second processing liquid passage so that the gap between the plate-shaped member 2 and the substrate is filled.

また、第1の板状の部材と基板との隙間、あるいは第2の板状の部材と基板との隙間に常温より高い温度の処理液を充填すると、処理液の粘性が低くなるので、第1又は第2のエアナイフから吹き付けられたエアにより、基板の表面又は裏面から処理液が押し流され易くなる。また、処理液の蒸気圧が高くなるので、基板の表面又は裏面から処理液が気化し易くなる。従って、乾燥時間が短縮され、乾燥むらが少なくなる。   In addition, if a treatment liquid having a temperature higher than room temperature is filled in the gap between the first plate-shaped member and the substrate or the gap between the second plate-shaped member and the substrate, the viscosity of the treatment liquid becomes lower. Due to the air blown from the first or second air knife, the processing liquid is easily pushed away from the front surface or the back surface of the substrate. Further, since the vapor pressure of the processing liquid is increased, the processing liquid is easily vaporized from the front surface or the back surface of the substrate. Accordingly, the drying time is shortened, and the drying unevenness is reduced.

また、第1の板状の部材と基板との隙間に充填された処理液、あるいは第2の板状の部材と基板との隙間に充填された処理液を加温しても、同様の効果が得られる。処理液を加温する機構(例えば、ヒータ等)は、第1の板状の部材又は第2の板状の部材、あるいはそれらの両方に設けてもよい。また、処理液を加温する機構を第1の板状の部材に直接設けず、処理液を加温する機構を備えた第3の板状の部材を第1の板状の部材と基板との間に設けてもよい。同様に、処理液を加温する機構を第2の板状の部材に直接設けず、処理液を加温する機構を備えた第4の板状の部材を第2の板状の部材と基板との間に設けてもよい。   The same effect can be obtained by heating the treatment liquid filled in the gap between the first plate-like member and the substrate or the treatment liquid filled in the gap between the second plate-like member and the substrate. Is obtained. A mechanism (for example, a heater) for heating the processing liquid may be provided on the first plate-like member, the second plate-like member, or both of them. In addition, a mechanism for heating the processing liquid is not provided directly on the first plate-like member, and a third plate-like member having a mechanism for heating the processing liquid is used as the first plate-like member and the substrate. You may provide between. Similarly, a mechanism for heating the processing liquid is not provided directly on the second plate-like member, and a fourth plate-like member having a mechanism for heating the processing liquid is used as the second plate-like member and the substrate. You may provide between.

また、第1又は第2のエアナイフから常温より高い温度のエアを吹き付けると、基板の表面又は裏面から処理液が気化し易くなる。従って、乾燥時間が短縮され、乾燥むらが少なくなる。   Further, when air having a temperature higher than normal temperature is blown from the first or second air knife, the processing liquid is easily vaporized from the front surface or the back surface of the substrate. Accordingly, the drying time is shortened, and the drying unevenness is reduced.

エアナイフを用いて基板の乾燥を行う際、エアナイフの後段から空気の層がエアナイフのエアに巻き込まれて基板の表面又は裏面に当たる。この空気の層がエアナイフのエアより低温であると、乾燥時間の短縮効果が低下する。そこで、第1又は第2のエアナイフから常温より高い温度のエアを吹き付ける際、第1又は第2のエアナイフの後段から温風を供給すると、乾燥時間の短縮効果が低下するのを防止して、乾燥むらがさらに少なくなる。   When drying a substrate using an air knife, a layer of air is caught in the air of the air knife from the subsequent stage of the air knife and hits the front or back surface of the substrate. If this air layer is at a lower temperature than the air of the air knife, the effect of shortening the drying time is reduced. Therefore, when blowing hot air from the first or second air knife at a temperature higher than normal temperature, supplying hot air from the subsequent stage of the first or second air knife prevents the drying time from being reduced. Drying unevenness is further reduced.

また、基板が第1の板状の部材の下方を通過する前、通過中、または通過後に基板の表面を加熱すると、加熱された基板の表面から処理液が気化し易くなる。同様に、基板が第2の板状の部材の上方を通過する前、通過中、または通過後に基板の裏面を加熱すると、加熱された基板の裏面から処理液が気化し易くなる。従って、乾燥時間が短縮され、乾燥むらが少なくなる。   Further, when the surface of the substrate is heated before the substrate passes under the first plate-like member, during the passage, or after the passage, the processing liquid is easily vaporized from the surface of the heated substrate. Similarly, when the back surface of the substrate is heated before, during, or after passing over the second plate-shaped member, the processing liquid is easily vaporized from the back surface of the heated substrate. Accordingly, the drying time is shortened, and the drying unevenness is reduced.

また、基板を水平に対して所定の角度傾斜した状態で移動すると、現像液やエッチング液等の薬液が基板の表面に停滞することなく効率よく処理液と置換されるため、高い洗浄効果が得られる。さらに、処理液も基板の表面に滞留しないため、基板の表面から浮遊した異物が基板の表面に再付着しにくく、高い異物除去効果が得られる。そして、基板を基板移動方向に所定の角度傾斜した状態で移動すると、装置全体として基板移動方向の床面積が小さくて済む。また、基板を基板移動方向と直交する方向に所定の角度傾斜した状態で移動すると、装置全体として基板移動方向と直交する方向の床面積が小さくて済み、さらに、現像やエッチング等の薬液処理を行う際、薬液が基板の側部へ流れるため、各処理工程内の設備で容易に薬液を回収することができる。 In addition, when the substrate is moved in a state inclined at a predetermined angle with respect to the horizontal, a chemical solution such as a developing solution or an etching solution is efficiently replaced with the processing solution without stagnation on the surface of the substrate, thereby obtaining a high cleaning effect. It is done. Furthermore, since the processing liquid does not stay on the surface of the substrate, the foreign matter floating from the surface of the substrate is difficult to reattach to the surface of the substrate, and a high foreign matter removing effect is obtained. Then, if the substrate is moved in a state inclined at a predetermined angle in the substrate moving direction, the floor area in the substrate moving direction can be reduced as a whole apparatus. Also, when you move the substrate in a state inclined by a prescribed angle in the direction perpendicular to the substrate movement direction, only a small floor area in the direction orthogonal to the substrate moving direction as a whole device, further, a chemical treatment such as developing and etching When performing, since a chemical | medical solution flows to the side part of a board | substrate, a chemical | medical solution can be easily collect | recovered with the installation in each process process.

本発明の基板の製造方法は、上記のいずれかの基板処理装置又は基板処理方法を用いて基板を乾燥させるものである。上記基板処理装置又は上記基板処理方法を用いることにより、乾燥むらが少なくなり、品質の高い基板を製造することができる。   The substrate manufacturing method of the present invention is to dry a substrate using any one of the above-described substrate processing apparatuses or substrate processing methods. By using the substrate processing apparatus or the substrate processing method, unevenness in drying is reduced and a high-quality substrate can be manufactured.

本発明の基板処理装置及び基板処理方法によれば、エアナイフを用いて基板の乾燥を行う際に、処理液の使用量を低減することができる。   According to the substrate processing apparatus and the substrate processing method of the present invention, when the substrate is dried using an air knife, the amount of processing liquid used can be reduced.

また、本発明の基板処理装置及び基板処理方法によれば、エアナイフを用いて基板の乾燥を行う際に、ウォーターマークの発生を防止して、基板をむらなく均一に乾燥させることができる。   Further, according to the substrate processing apparatus and the substrate processing method of the present invention, when the substrate is dried using an air knife, the generation of a watermark can be prevented and the substrate can be uniformly dried.

さらに、本発明の基板処理装置及び基板処理方法によれば、エアナイフを用いて基板の乾燥を行う際に、乾燥時間を短縮させて、乾燥むらを少なくすることができる。   Furthermore, according to the substrate processing apparatus and the substrate processing method of the present invention, when the substrate is dried using an air knife, the drying time can be shortened and uneven drying can be reduced.

本発明の基板の製造方法によれば、乾燥むらが少なく品質の高い基板を製造することができる。   According to the substrate manufacturing method of the present invention, it is possible to manufacture a high-quality substrate with little drying unevenness.

図1は、本発明の一実施の形態による基板処理装置の一部断面側面図である。本実施の形態は、基板を水平に移動する例を示している。基板処理装置は、複数のローラ10、エアナイフ11a,11b、上板12、パイプ13、下板14、及びパイプ15を含んで構成されている。   FIG. 1 is a partial cross-sectional side view of a substrate processing apparatus according to an embodiment of the present invention. This embodiment shows an example in which the substrate is moved horizontally. The substrate processing apparatus includes a plurality of rollers 10, air knives 11 a and 11 b, an upper plate 12, a pipe 13, a lower plate 14, and a pipe 15.

基板1は、複数のローラ10上に搭載され、ローラ10の回転により矢印で示す基板移動方向へ移動される。各ローラ10は、基板移動方向に一定の間隔で設置されており、図示しない駆動手段により所定の速度で回転する。各ローラ10は、同じ高さで水平に設置されており、これにより複数のローラ10は、基板1を水平に移動する。   The substrate 1 is mounted on a plurality of rollers 10 and is moved in the substrate movement direction indicated by an arrow by the rotation of the rollers 10. Each roller 10 is installed at regular intervals in the substrate moving direction, and is rotated at a predetermined speed by a driving means (not shown). Each roller 10 is horizontally installed at the same height, and thereby the plurality of rollers 10 moves the substrate 1 horizontally.

ローラ10に搭載された基板1の上方には、基板1の基板移動方向と直交する方向の幅に渡って、上板12が基板1と所定の間隔で平行に設置されている。上板12には、上板12の中心より基板移動方向寄りに、パイプ13が取り付けられている。パイプ13は、洗浄水を所定の流量で供給することにより、上板12と基板1との隙間に洗浄水2aを充填する。これにより、上板12の下方を通過する際、基板1の表面に洗浄水の膜が均一に形成される。   Above the substrate 1 mounted on the roller 10, an upper plate 12 is installed in parallel with the substrate 1 at a predetermined interval over a width in a direction orthogonal to the substrate movement direction of the substrate 1. A pipe 13 is attached to the upper plate 12 closer to the substrate moving direction than the center of the upper plate 12. The pipe 13 fills the gap between the upper plate 12 and the substrate 1 with the cleaning water 2a by supplying the cleaning water at a predetermined flow rate. Thereby, when passing under the upper plate 12, a film of cleaning water is uniformly formed on the surface of the substrate 1.

また、ローラ10に搭載された基板1の下方には、基板1の基板移動方向と直交する方向の幅に渡って、下板14が基板1と所定の間隔で平行に設置されている。本実施の形態では、下板14と基板1との間隔がローラ10の直径より大きく、下板14はローラ10の下方に位置する。そして、下板14の上方に位置するローラ10は、下板14の周囲に設けた側壁14aで囲まれている。下板14には、下板14の中心より基板移動方向寄りに、パイプ15が取り付けられている。パイプ15は、洗浄水を所定の流量で供給することにより、下板14と基板1との隙間に洗浄水2bを充填する。これにより、下板14の上方を通過する際、基板1の裏面に洗浄水の膜が均一に形成される。   A lower plate 14 is disposed below the substrate 1 mounted on the roller 10 in parallel with the substrate 1 at a predetermined interval across the width of the substrate 1 in the direction orthogonal to the substrate moving direction. In the present embodiment, the distance between the lower plate 14 and the substrate 1 is larger than the diameter of the roller 10, and the lower plate 14 is positioned below the roller 10. The roller 10 positioned above the lower plate 14 is surrounded by a side wall 14 a provided around the lower plate 14. A pipe 15 is attached to the lower plate 14 closer to the substrate moving direction than the center of the lower plate 14. The pipe 15 fills the gap between the lower plate 14 and the substrate 1 with the cleaning water 2b by supplying the cleaning water at a predetermined flow rate. As a result, when passing over the lower plate 14, a film of cleaning water is uniformly formed on the back surface of the substrate 1.

さらに、ローラ10に搭載された基板1の上方には、基板1の基板移動方向と直交する方向の幅に渡り、上板12に近接して、エアナイフ11aが基板1と平行に設置されている。また、ローラ10に搭載された基板1の下方には、エアナイフ11bが同様に設置されている。エアナイフ11a,11bは、例えば、長尺のケーシングの内部に加圧室を形成し、加圧室に通じるエア通路を長手方向にスリット状に設けて構成されている。図示しないエア供給手段からエアナイフ11a,11bへエアが供給され、エアナイフ11a,11bはエア通路の先端からエアを長手方向に渡って均一に吐出する。エアナイフ11a,11bから吐出されたエアは、図中に破線の矢印で示すように、基板移動方向と反対側の向きに、基板1の表面又は裏面へ所定の入射角度で斜めに吹き付けられる。これにより、上板12の下方を通過した基板1の表面及び下板14の上方を通過した基板1の裏面から、洗浄水が押し流されて除去される。   Further, an air knife 11 a is installed above the substrate 1 mounted on the roller 10 in parallel with the substrate 1 in the vicinity of the upper plate 12 over a width in a direction orthogonal to the substrate moving direction of the substrate 1. . An air knife 11b is similarly installed below the substrate 1 mounted on the roller 10. The air knives 11a and 11b are configured, for example, by forming a pressurizing chamber inside a long casing and providing an air passage leading to the pressurizing chamber in a slit shape in the longitudinal direction. Air is supplied from an air supply means (not shown) to the air knives 11a and 11b, and the air knives 11a and 11b discharge air uniformly from the front end of the air passage in the longitudinal direction. The air discharged from the air knives 11a and 11b is blown obliquely at a predetermined incident angle to the front surface or back surface of the substrate 1 in the direction opposite to the substrate moving direction, as indicated by the dashed arrows in the figure. Accordingly, the cleaning water is washed away from the front surface of the substrate 1 that has passed under the upper plate 12 and the back surface of the substrate 1 that has passed above the lower plate 14.

図2は、本発明の他の実施の形態による基板処理装置の一部断面側面図である。本実施の形態が図1に示した実施の形態と異なるのは、パイプ13から供給される洗浄水の流量を調整することにより、上板12と基板1との隙間に充填されて基板1の側面から流れ出た洗浄水が、下板14と基板1との隙間にも充填されるようにして、パイプ15を不要とした点である。その他の構成は、図1に示した実施の形態と同様である。   FIG. 2 is a partial cross-sectional side view of a substrate processing apparatus according to another embodiment of the present invention. This embodiment is different from the embodiment shown in FIG. 1 in that the gap between the upper plate 12 and the substrate 1 is filled by adjusting the flow rate of the cleaning water supplied from the pipe 13. The cleaning water that has flowed out from the side surface is also filled in the gap between the lower plate 14 and the substrate 1, thereby eliminating the need for the pipe 15. Other configurations are the same as those of the embodiment shown in FIG.

図3は、本発明のさらに他の実施の形態による基板処理装置の一部断面側面図である。本実施の形態は、基板を水平に対して基板移動方向に所定の角度傾斜した状態で移動する例を示している。基板処理装置は、複数のローラ20、エアナイフ21a,21b、上板22、パイプ23、下板24、及びパイプ25を含んで構成されている。各ローラ20の設置高さは、基板移動方向へ進むに従って高くなっており、これにより複数のローラ20は、基板1を水平に対して基板移動方向に所定の角度θ1だけ傾斜した状態で移動する。エアナイフ21a,21b、上板22及び下板24は、基板1の傾斜に合わせて傾けて設置されている。その他の構成は、図1に示した実施の形態と同様である。   FIG. 3 is a partial cross-sectional side view of a substrate processing apparatus according to still another embodiment of the present invention. This embodiment shows an example in which the substrate is moved in a state where the substrate is inclined at a predetermined angle in the substrate moving direction with respect to the horizontal. The substrate processing apparatus includes a plurality of rollers 20, air knives 21 a and 21 b, an upper plate 22, a pipe 23, a lower plate 24, and a pipe 25. The installation height of each roller 20 becomes higher as the substrate moves in the substrate moving direction, whereby the plurality of rollers 20 move in a state where the substrate 1 is inclined by a predetermined angle θ1 in the substrate moving direction with respect to the horizontal. . The air knives 21 a and 21 b, the upper plate 22 and the lower plate 24 are installed to be inclined according to the inclination of the substrate 1. Other configurations are the same as those of the embodiment shown in FIG.

図3に示した実施の形態によれば、基板を水平に対して基板移動方向に傾斜した状態で移動するため、装置全体として基板移動方向の床面積が小さくて済む。   According to the embodiment shown in FIG. 3, since the substrate is moved in a state inclined in the substrate movement direction with respect to the horizontal, the floor area in the substrate movement direction can be reduced as a whole apparatus.

図4は、本発明のさらに他の実施の形態による基板処理装置の斜視図である。本実施の形態は、基板を水平に対して基板移動方向と直交する方向に所定の角度傾斜した状態で移動する例を示している。基板処理装置は、複数のローラ30、エアナイフ31a,31b、上板32、パイプ33、下板34、及びパイプ35を含んで構成されている。なお、図4では、パイプ35は下板34に隠れて見えない。各ローラ30は、その一端が他端より高くなるように傾けて設置されており、これにより複数のローラ30は、基板1を水平に対して基板移動方向と直交する方向に所定の角度θ2だけ傾斜した状態で移動する。エアナイフ31a,31b、上板32及び下板34は、基板1の傾斜に合わせて傾けて設置されている。また、パイプ33及びパイプ35は、傾斜した上板32及び下板34の高い方の測部付近へ移動している。その他の構成は、図1に示した実施の形態と同様である。   FIG. 4 is a perspective view of a substrate processing apparatus according to still another embodiment of the present invention. This embodiment shows an example in which the substrate is moved in a state where the substrate is inclined at a predetermined angle in a direction orthogonal to the substrate moving direction with respect to the horizontal. The substrate processing apparatus includes a plurality of rollers 30, air knives 31a and 31b, an upper plate 32, a pipe 33, a lower plate 34, and a pipe 35. In FIG. 4, the pipe 35 is hidden behind the lower plate 34 and cannot be seen. Each roller 30 is inclined and installed such that one end thereof is higher than the other end, so that the plurality of rollers 30 allows the substrate 1 to be moved by a predetermined angle θ2 in a direction perpendicular to the substrate moving direction with respect to the horizontal. Move in an inclined state. The air knives 31 a and 31 b, the upper plate 32, and the lower plate 34 are installed to be inclined according to the inclination of the substrate 1. Further, the pipe 33 and the pipe 35 are moved to the vicinity of the higher measuring portion of the inclined upper plate 32 and lower plate 34. Other configurations are the same as those of the embodiment shown in FIG.

図4に示した実施の形態によれば、基板を水平に対して基板移動方向と直交する方向に傾斜した状態で移動するため、装置全体として基板移動方向と直交する方向の床面積が小さくて済む。さらに、図3に示した実施の形態では、現像やエッチング等の薬液処理を行う際、薬液が基板の傾斜に沿って前段の処理工程の設備へ流れ込むのを防止する必要があるが、図4に示した実施の形態によれば、薬液が基板の側部へ流れるため、各処理工程内の設備で容易に薬液を回収することができる。   According to the embodiment shown in FIG. 4, since the substrate is moved while being inclined in a direction orthogonal to the substrate moving direction with respect to the horizontal, the floor area in the direction orthogonal to the substrate moving direction as a whole is small. That's it. Further, in the embodiment shown in FIG. 3, when chemical processing such as development and etching is performed, it is necessary to prevent the chemical from flowing into the equipment of the previous processing step along the inclination of the substrate. According to the embodiment described above, since the chemical solution flows to the side portion of the substrate, the chemical solution can be easily collected by the equipment in each processing step.

図3及び図4に示した実施の形態によれば、基板を水平に対して所定の角度傾斜した状態で移動するため、現像液やエッチング液等の薬液が基板の表面に停滞することなく効率よく洗浄水と置換され、高い洗浄効果が得られる。さらに、洗浄水も基板の表面に滞留しないので、基板の表面から浮遊した異物が基板の表面に再付着しにくく、高い異物除去効果が得られる。   According to the embodiment shown in FIG. 3 and FIG. 4, since the substrate is moved in a state inclined at a predetermined angle with respect to the horizontal, the chemical solution such as a developing solution or an etching solution does not stagnate on the surface of the substrate. It is often replaced with washing water, and a high washing effect is obtained. Further, since the cleaning water does not stay on the surface of the substrate, the foreign matter floating from the surface of the substrate is not easily reattached to the surface of the substrate, and a high foreign matter removing effect is obtained.

図5は、本発明のさらに他の実施の形態による基板処理装置の一部断面側面図である。本実施の形態が図1に示した実施の形態と異なるのは、ローラ40の直径が大きく、下板44と基板1との間隔をローラ40の直径より小さくした点である。下板44には、ローラ40を露出するための開口が設けられており、下板44の中心より基板移動方向寄りに、パイプ45が取り付けられている。パイプ45は、洗浄水を所定の流量で供給することにより、下板44と基板1との隙間に洗浄水2bを充填する。その他の構成は、図1に示した実施の形態と同様である。   FIG. 5 is a partial cross-sectional side view of a substrate processing apparatus according to still another embodiment of the present invention. This embodiment is different from the embodiment shown in FIG. 1 in that the diameter of the roller 40 is large and the distance between the lower plate 44 and the substrate 1 is smaller than the diameter of the roller 40. The lower plate 44 is provided with an opening for exposing the roller 40, and a pipe 45 is attached closer to the substrate moving direction than the center of the lower plate 44. The pipe 45 fills the gap between the lower plate 44 and the substrate 1 with the cleaning water 2b by supplying the cleaning water at a predetermined flow rate. Other configurations are the same as those of the embodiment shown in FIG.

図6は、本発明のさらに他の実施の形態による基板処理装置の一部断面側面図である。本実施の形態が図5に示した実施の形態と異なるのは、複数の下板54を2つのローラ40の間に配置した点である。各下板54には、下板54の中心より基板移動方向寄りに、パイプ55が取り付けられている。各パイプ55は、洗浄水を所定の流量で供給することにより、各下板54と基板1との隙間に洗浄水2bを充填する。その他の構成は、図1に示した実施の形態と同様である。   FIG. 6 is a partial cross-sectional side view of a substrate processing apparatus according to still another embodiment of the present invention. The present embodiment is different from the embodiment shown in FIG. 5 in that a plurality of lower plates 54 are arranged between two rollers 40. A pipe 55 is attached to each lower plate 54 closer to the substrate moving direction than the center of the lower plate 54. Each pipe 55 fills the gap between each lower plate 54 and the substrate 1 with the cleaning water 2b by supplying the cleaning water at a predetermined flow rate. Other configurations are the same as those of the embodiment shown in FIG.

以上説明した実施の形態によれば、上板12,22,32を基板1の上方に基板1と所定の間隔で設け、上板12,22,32と基板との隙間に洗浄水2aを充填することにより、少量の洗浄水で基板1の表面に洗浄水の膜を均一に形成することができる。また、基板1の表面は上板12,22,32で覆われているため、エアナイフ11a,21a,31aからのエアで吹き飛ばされた洗浄水の粒が基板1の表面に付着せず、ウォーターマークが発生するのを防止することができる。   According to the embodiment described above, the upper plates 12, 22, and 32 are provided above the substrate 1 at a predetermined distance from the substrate 1, and the cleaning water 2a is filled in the gap between the upper plates 12, 22, and 32 and the substrate. By doing so, a film of cleaning water can be uniformly formed on the surface of the substrate 1 with a small amount of cleaning water. Further, since the surface of the substrate 1 is covered with the upper plates 12, 22, 32, the cleaning water particles blown off by the air from the air knives 11 a, 21 a, 31 a do not adhere to the surface of the substrate 1, and the watermark Can be prevented.

同様に、下板14,24,34,44,54を基板1の下方に基板1と所定の間隔で設け、下板14,24,34,44,54と基板との隙間に洗浄水2bを充填することにより、少量の洗浄水で基板1の裏面に洗浄水の膜を均一に形成することができる。また、基板1の裏面は下板14,24,34,44,54で覆われているため、エアナイフ11b,21b,31bからのエアで吹き飛ばされた洗浄水の粒が基板1の裏面に付着せず、ウォーターマークが発生するのを防止することができる。   Similarly, the lower plates 14, 24, 34, 44, 54 are provided below the substrate 1 at a predetermined interval from the substrate 1, and the cleaning water 2 b is placed in the gap between the lower plates 14, 24, 34, 44, 54 and the substrate. By filling, a film of cleaning water can be uniformly formed on the back surface of the substrate 1 with a small amount of cleaning water. Further, since the back surface of the substrate 1 is covered with the lower plates 14, 24, 34, 44, 54, the cleaning water particles blown off with the air from the air knives 11 b, 21 b, 31 b adhere to the back surface of the substrate 1. Therefore, the occurrence of a watermark can be prevented.

さらに、以上説明した実施の形態において、上板12,22,32と基板1との隙間、あるいは下板14,24,34,44,54と基板1との隙間に常温より高い温度の洗浄水を充填すると、洗浄水の粘性が低くなるので、エアナイフ11a,11b,21a,21b,31a,31bから吹き付けられたエアにより、基板1の表面又裏面から洗浄水が押し流され易くなる。また、洗浄水の蒸気圧が高くなるので、基板1の表面又は裏面から洗浄水が気化し易くなる。従って、乾燥時間が短縮され、乾燥むらが少なくなる。   Further, in the embodiment described above, cleaning water having a temperature higher than room temperature is provided in the gap between the upper plates 12, 22, 32 and the substrate 1 or in the gap between the lower plates 14, 24, 34, 44, 54 and the substrate 1. Since the viscosity of the cleaning water is lowered, the cleaning water is easily washed away from the front surface or the back surface of the substrate 1 by the air blown from the air knives 11a, 11b, 21a, 21b, 31a, 31b. In addition, since the cleaning water has a high vapor pressure, the cleaning water is easily vaporized from the front surface or the back surface of the substrate 1. Accordingly, the drying time is shortened, and the drying unevenness is reduced.

また、上板12,22,32と基板1との隙間に充填された洗浄水2a、あるいは下板14,24,34,44,54と基板1との隙間に充填された洗浄水2bを加温しても、同様の効果が得られる。洗浄水2a,2bを加温する機構(例えば、ヒータ等)は、上板12,22,32又は下板14,24,34,44,54、あるいはそれらの両方に設けてもよい。また、洗浄水2aを加温する機構を上板12,22,32に直接設けず、洗浄水2aを加温する機構を備えた第3の板状の部材を上板12,22,32と基板1との間に設けてもよい。同様に、洗浄水2bを加温する機構を下板14,24,34,44,54に直接設けず、洗浄水2bを加温する機構を備えた第4の板状の部材を下板14,24,34,44,54と基板1との間に設けてもよい。   Further, cleaning water 2a filled in the gap between the upper plates 12, 22, 32 and the substrate 1 or washing water 2b filled in the gap between the lower plates 14, 24, 34, 44, 54 and the substrate 1 is added. Even if heated, the same effect can be obtained. A mechanism (for example, a heater) for heating the cleaning water 2a, 2b may be provided on the upper plate 12, 22, 32, the lower plate 14, 24, 34, 44, 54, or both. Further, a mechanism for heating the cleaning water 2a is not directly provided on the upper plates 12, 22, 32, and a third plate-like member having a mechanism for heating the cleaning water 2a is used as the upper plates 12, 22, 32. It may be provided between the substrate 1. Similarly, a mechanism for heating the cleaning water 2b is not directly provided on the lower plates 14, 24, 34, 44, and 54, and a fourth plate member having a mechanism for heating the cleaning water 2b is used as the lower plate 14. , 24, 34, 44, 54 and the substrate 1 may be provided.

また、エアナイフ11a,11b,21a,21b,31a,31bから常温より高い温度のエアを吹き付けると、基板1の表面又は裏面から洗浄水が気化し易くなる。従って、乾燥時間が短縮され、乾燥むらが少なくなる。   Further, when air having a temperature higher than room temperature is blown from the air knives 11 a, 11 b, 21 a, 21 b, 31 a, 31 b, the cleaning water is easily vaporized from the front surface or the back surface of the substrate 1. Accordingly, the drying time is shortened, and the drying unevenness is reduced.

図7は、本発明のさらに他の実施の形態による基板処理装置の一部断面側面図である。本実施の形態は、図1に示した実施の形態において、上板12及び下板14の前段にヒータ60a,60bを設け、エアナイフ11a,11bの後段に温風供給装置80a,80bを設けたものである。その他の構成は、図1に示した実施の形態と同様である。   FIG. 7 is a partial sectional side view of a substrate processing apparatus according to still another embodiment of the present invention. In this embodiment, in the embodiment shown in FIG. 1, heaters 60a and 60b are provided in front of the upper plate 12 and lower plate 14, and hot air supply devices 80a and 80b are provided in the rear of the air knives 11a and 11b. Is. Other configurations are the same as those of the embodiment shown in FIG.

本実施の形態においては、パイプ13から常温より高い温度の洗浄水を上板12と基板1との隙間に充填し、パイプ15から常温より高い温度の洗浄水を下板14と基板1との隙間に充填する。そして、エアナイフ11aから常温より高い温度のエアを上板12の下方を通過した基板1の表面へ吹き付け、エアナイフ11bから常温より高い温度のエアを下板14の上方を通過した基板1の裏面へ吹き付ける。   In the present embodiment, cleaning water having a temperature higher than normal temperature is filled in the gap between the upper plate 12 and the substrate 1 from the pipe 13, and cleaning water having a temperature higher than normal temperature is supplied from the pipe 15 to the lower plate 14 and the substrate 1. Fill the gap. Then, air having a temperature higher than normal temperature is blown from the air knife 11a onto the surface of the substrate 1 that has passed below the upper plate 12, and air having a temperature higher than normal temperature is blown from the air knife 11b to the back surface of the substrate 1 that has passed above the lower plate 14. Spray.

このとき、エアナイフ11a,11bから吹き付けるエアの温度は、上板12と基板1との隙間及び下板14と基板1との隙間に充填する洗浄水の温度より高い方が望ましい。本実施の形態において、例えば上板12と基板1との隙間及び下板14と基板1との隙間に充填する洗浄水の温度を約40℃とすると、洗浄水が常温の場合に比べて乾燥時間は約3割短縮される。また、エアナイフ11a,11bから吹き付けるエアの温度を約55℃とすると、エアが常温の場合に比べて乾燥時間はさらに約1割短縮される。   At this time, the temperature of the air blown from the air knives 11 a and 11 b is preferably higher than the temperature of the cleaning water filled in the gap between the upper plate 12 and the substrate 1 and the gap between the lower plate 14 and the substrate 1. In the present embodiment, for example, when the temperature of the cleaning water filled in the gap between the upper plate 12 and the substrate 1 and the gap between the lower plate 14 and the substrate 1 is about 40 ° C., the cleaning water is dried as compared with the case where the cleaning water is at room temperature. Time is reduced by about 30%. If the temperature of the air blown from the air knives 11a and 11b is about 55 ° C., the drying time is further shortened by about 10% compared to the case where the air is at room temperature.

エアナイフ11a,11bからエアを吹き付けると、エアナイフ11a,11bの後段から空気の層がエアナイフ11a,11bのエアに巻き込まれて基板1の表面又は裏面に当たる。この空気の層がエアナイフ11a,11bのエアより低温であると、乾燥時間の短縮効果が低下する。本実施の形態では、隔壁70a,70bで区切られたエアナイフ11a,11bの後段に、温風供給装置80a,80bが設けられている。温風供給装置80a,80bは、エアナイフ11a,11bが吹き付けるエアと同程度の温度の温風を発生する。これにより、乾燥時間の短縮効果が低下するのを防止して、乾燥むらをさらに少なくすることができる。   When air is blown from the air knives 11a and 11b, a layer of air is caught in the air of the air knives 11a and 11b from the subsequent stage of the air knives 11a and 11b and hits the front or back surface of the substrate 1. When this air layer is at a lower temperature than the air of the air knives 11a and 11b, the effect of shortening the drying time is reduced. In the present embodiment, hot air supply devices 80a and 80b are provided after the air knives 11a and 11b separated by the partition walls 70a and 70b. The hot air supply devices 80a and 80b generate hot air having a temperature similar to that of the air blown by the air knives 11a and 11b. Thereby, it can prevent that the drying time shortening effect falls and can further reduce drying unevenness.

また、上板12の前段に設けたヒータ60aを用いて、基板1が上板12の下方を通過する前に基板1の表面を加熱することにより、加熱された基板1の表面から洗浄水が気化し易くなる。同様に、下板14の前段に設けたヒータ60bを用いて、基板1が下板14の上方を通過する前に基板1の裏面を加熱することにより、加熱された基板1の裏面から洗浄水が気化し易くなる。従って、乾燥時間を短縮することができ、乾燥むらを少なくすることができる。   In addition, by using the heater 60 a provided in the front stage of the upper plate 12, the surface of the substrate 1 is heated before the substrate 1 passes under the upper plate 12, so that cleaning water is discharged from the heated surface of the substrate 1. It becomes easy to vaporize. Similarly, by using the heater 60b provided in the front stage of the lower plate 14, the back surface of the substrate 1 is heated before the substrate 1 passes over the lower plate 14, thereby cleaning water from the back surface of the heated substrate 1. It becomes easy to vaporize. Therefore, the drying time can be shortened and uneven drying can be reduced.

なお、基板1の表面又は裏面の加熱は、基板1が上板12の下方又は下板14の上方を通過する前に限らず、通過中、または通過後に行ってもよい。   The heating of the front surface or the back surface of the substrate 1 is not limited to before the substrate 1 passes below the upper plate 12 or above the lower plate 14, but may be performed during or after the passage.

なお、以上説明した実施の形態では、上板12,22,32にパイプ13,23,33が1本だけ設けられているが、パイプ13,23,33は、上板12,22,32の大きさに応じて、複数設けてもよい。下板14,24,34,44,54のパイプ15,25,35,45,55についても、同様である。   In the embodiment described above, only one pipe 13, 23, 33 is provided on the upper plates 12, 22, 32, but the pipes 13, 23, 33 are provided on the upper plates 12, 22, 32. A plurality may be provided depending on the size. The same applies to the pipes 15, 25, 35, 45, and 55 of the lower plates 14, 24, 34, 44, and 54.

また、以上説明した実施の形態では、基板の表面及び裏面に洗浄水の膜を形成する例について説明したが、本発明は洗浄水に限らず、各種の処理液を用いた基板の処理に適用される。   In the above-described embodiment, the example of forming the cleaning water film on the front surface and the back surface of the substrate has been described. However, the present invention is not limited to the cleaning water, and is applied to the processing of the substrate using various processing liquids. Is done.

以上説明した基板処理装置、またはそれらを使った基板処理方法を用いて基板を乾燥させることにより、基板の乾燥むらが少なくなり、品質の高い基板を製造することができる。   By drying the substrate using the substrate processing apparatus described above or the substrate processing method using them, the unevenness of drying of the substrate is reduced, and a high-quality substrate can be manufactured.

本発明の一実施の形態による基板処理装置の一部断面側面図である。It is a partial cross section side view of the substrate processing apparatus by one embodiment of the present invention. 本発明の他の実施の形態による基板処理装置の一部断面側面図である。It is a partial cross section side view of the substrate processing apparatus by other embodiment of this invention. 本発明のさらに他の実施の形態による基板処理装置の一部断面側面図である。It is a partial cross section side view of the substrate processing apparatus by further another embodiment of this invention. 本発明のさらに他の実施の形態による基板処理装置の斜視図である。It is a perspective view of the substrate processing apparatus by further another embodiment of this invention. 本発明のさらに他の実施の形態による基板処理装置の一部断面側面図である。It is a partial cross section side view of the substrate processing apparatus by further another embodiment of this invention. 本発明のさらに他の実施の形態による基板処理装置の一部断面側面図である。It is a partial cross section side view of the substrate processing apparatus by further another embodiment of this invention. 本発明のさらに他の実施の形態による基板処理装置の一部断面側面図である。It is a partial cross section side view of the substrate processing apparatus by further another embodiment of this invention.

符号の説明Explanation of symbols

1 基板
2a,2b 洗浄水
10,20,30,40 ローラ
11a,11b,21a,21b,31a,31b エアナイフ
12,22,32 上板
13,23,33 パイプ
14,24,34,44,54 下板
15,25,35,45,55 パイプ
60a,60b ヒータ
70a,70b, 隔壁
80a,80b 温風供給装置
1 Substrate 2a, 2b Washing water 10, 20, 30, 40 Rollers 11a, 11b, 21a, 21b, 31a, 31b Air knives 12, 22, 32 Upper plate 13, 23, 33 Pipes 14, 24, 34, 44, 54 Lower Plates 15, 25, 35, 45, 55 Pipes 60a, 60b Heaters 70a, 70b, partition walls 80a, 80b Hot air supply device

Claims (21)

複数のローラにより基板を移動する基板移動手段と、
前記基板移動手段により移動される基板の上方に基板と所定の間隔で設けられた第1の板状の部材と、
前記第1の板状の部材と基板との隙間に常温より高い温度の処理液を充填して、前記第1の板状の部材の下方を通過した基板の表面に処理液の膜を形成する第1の処理液通路と、
前記第1の板状の部材の下方を通過した基板の表面へ常温より高い温度のエアを吹き付けて、基板の表面から処理液を押し流す第1のエアナイフと
前記複数のローラが入る複数の開口を有し、前記複数のローラにより移動される基板の下方に、基板から前記複数のローラの直径より小さい間隔で設けられた第2の板状の部材と、
前記第2の板状の部材と基板との隙間に常温より高い温度の処理液を充填して、前記第2の板状の部材の上方を通過した基板の裏面に処理液の膜を形成する第2の処理液通路と、
前記第2の板状の部材の上方を通過した基板の裏面へ常温より高い温度のエアを吹き付けて、基板の裏面から処理液を押し流す第2のエアナイフとを備えたことを特徴とする基板処理装置。
A substrate moving means for moving the substrate by a plurality of rollers ;
A first plate-like member provided at a predetermined interval above the substrate moved by the substrate moving means;
A gap between the first plate-like member and the substrate is filled with a treatment liquid having a temperature higher than room temperature, and a film of the treatment liquid is formed on the surface of the substrate that has passed under the first plate-like member. A first treatment liquid passage;
A first air knife that blows air at a temperature higher than room temperature onto the surface of the substrate that has passed under the first plate-like member to push the processing liquid from the surface of the substrate ;
A second plate-like member having a plurality of openings into which the plurality of rollers enter, and provided below the substrate moved by the plurality of rollers at a distance smaller than the diameter of the plurality of rollers from the substrate;
A gap between the second plate-like member and the substrate is filled with a treatment liquid having a temperature higher than room temperature, and a film of the treatment liquid is formed on the back surface of the substrate that has passed over the second plate-like member. A second processing liquid passage;
Substrate processing comprising: a second air knife that blows air at a temperature higher than normal temperature onto the back surface of the substrate that has passed over the second plate-shaped member to flush the processing liquid from the back surface of the substrate. apparatus.
前記第1の板状の部材と基板との隙間に充填された処理液を加温する手段を備えたことを特徴とする請求項1に記載の基板処理装置。   The substrate processing apparatus according to claim 1, further comprising means for heating a processing liquid filled in a gap between the first plate-shaped member and the substrate. 前記第1のエアナイフの後段に温風を供給する手段を備えたことを特徴とする請求項1に記載の基板処理装置。   2. The substrate processing apparatus according to claim 1, further comprising means for supplying warm air to a subsequent stage of the first air knife. 基板が前記第1の板状の部材の下方を通過する前、通過中、または通過後に基板の表面を加熱する手段を備えたことを特徴とする請求項1に記載の基板処理装置。   2. The substrate processing apparatus according to claim 1, further comprising means for heating the surface of the substrate before, during, or after passing through the lower side of the first plate-like member. 前記第1の処理液通路を前記第2の処理液通路と兼用したことを特徴とする請求項1に記載の基板処理装置。 2. The substrate processing apparatus according to claim 1 , wherein the first processing liquid passage is also used as the second processing liquid passage. 前記第2の板状の部材と基板との隙間に充填された処理液を加温する手段を備えたことを特徴とする請求項1に記載の基板処理装置。 The substrate processing apparatus according to claim 1 , further comprising means for heating a processing liquid filled in a gap between the second plate-shaped member and the substrate. 前記第2のエアナイフの後段に温風を供給する手段を備えたことを特徴とする請求項1に記載の基板処理装置。 2. The substrate processing apparatus according to claim 1 , further comprising means for supplying warm air to a subsequent stage of the second air knife. 基板が前記第2の板状の部材の上方を通過する前、通過中、または通過後に基板の裏面を加熱する手段を備えたことを特徴とする請求項1に記載の基板処理装置。 2. The substrate processing apparatus according to claim 1 , further comprising means for heating the back surface of the substrate before, during, or after the substrate passes above the second plate-like member. 前記基板移動手段は、基板を水平に対して基板移動方向に所定の角度傾斜した状態で移動することを特徴とする請求項1に記載の基板処理装置。 The substrate processing apparatus according to claim 1 , wherein the substrate moving unit moves the substrate in a state inclined at a predetermined angle in the substrate moving direction with respect to the horizontal. 前記基板移動手段は、基板を水平に対して基板移動方向と直交する方向に所定の角度傾斜した状態で移動することを特徴とする請求項1に記載の基板処理装置。 The substrate processing apparatus according to claim 1 , wherein the substrate moving unit moves the substrate in a state inclined at a predetermined angle in a direction perpendicular to the substrate moving direction with respect to the horizontal. 複数のローラにより基板を移動しながら、
第1の板状の部材を基板の上方に基板と所定の間隔で設け、
第1の板状の部材と基板との隙間に常温より高い温度の処理液を充填して、第1の板状の部材の下方を通過した基板の表面に処理液の膜を形成し、
第1の板状の部材の下方を通過した基板の表面へ第1のエアナイフから常温より高い温度のエアを吹き付けて、基板の表面から処理液を押し流し、
複数のローラが入る複数の開口を有する第2の板状の部材を、複数のローラにより移動される基板の下方に、基板から複数のローラの直径より小さい間隔で設け、
第2の板状の部材と基板との隙間に常温より高い温度の処理液を充填して、第2の板状の部材の上方を通過した基板の裏面に処理液の膜を形成し、
第2の板状の部材の上方を通過した基板の裏面へ第2のエアナイフから常温より高い温度のエアを吹き付けて、基板の裏面から処理液を押し流すことを特徴とする基板処理方法。
While moving the substrate with multiple rollers ,
A first plate-like member is provided above the substrate at a predetermined interval from the substrate,
Filling the gap between the first plate-shaped member and the substrate with a treatment liquid having a temperature higher than room temperature, forming a film of the treatment liquid on the surface of the substrate that has passed under the first plate-shaped member,
To the surface of the substrate passes below the first plate-shaped member from the first air knife blowing high temperature air than the room temperature, and flow down the processing solution from the surface of the substrate,
A second plate-like member having a plurality of openings into which a plurality of rollers enter is provided below the substrate moved by the plurality of rollers at an interval smaller than the diameter of the plurality of rollers from the substrate,
Fill the gap between the second plate-shaped member and the substrate with a treatment liquid at a temperature higher than room temperature, and form a film of the treatment liquid on the back surface of the substrate that has passed over the second plate-shaped member,
The substrate processing method of the second plate-shaped rear surface to the second air knife substrate passing above the member by blowing high temperature air from the ambient temperature, and wherein the press flow Succoth the processing liquid from the back surface of the substrate.
第1の板状の部材と基板との隙間に充填された処理液を加温することを特徴とする請求項11に記載の基板処理方法。 The substrate processing method according to claim 11 , wherein the processing liquid filled in a gap between the first plate-shaped member and the substrate is heated. 第1のエアナイフの後段から温風を供給することを特徴とする請求項11に記載の基板処理方法。 The substrate processing method according to claim 11 , wherein hot air is supplied from a subsequent stage of the first air knife. 基板が第1の板状の部材の下方を通過する前、通過中、または通過後に基板の表面を加熱することを特徴とする請求項11に記載の基板処理方法。 The substrate processing method according to claim 11, wherein the surface of the substrate is heated before, during, or after the substrate passes under the first plate-like member. 第2の板状の部材と基板との隙間に充填された処理液を加温することを特徴とする請求項11に記載の基板処理方法。 The substrate processing method according to claim 11 , wherein the processing liquid filled in the gap between the second plate-shaped member and the substrate is heated. 第2のエアナイフの後段から温風を供給することを特徴とする請求項11に記載の基板処理方法。 The substrate processing method according to claim 11 , wherein hot air is supplied from a subsequent stage of the second air knife. 基板が第2の板状の部材の上方を通過する前、通過中、または通過後に基板の裏面を加熱することを特徴とする請求項11に記載の基板処理方法。 The substrate processing method according to claim 11, wherein the back surface of the substrate is heated before, during, or after the substrate passes over the second plate-like member. 基板を水平に対して基板移動方向に所定の角度傾斜した状態で移動することを特徴とする請求項11に記載の基板処理方法。 The substrate processing method according to claim 11 , wherein the substrate is moved while being inclined at a predetermined angle in a substrate moving direction with respect to the horizontal. 基板を水平に対して基板移動方向と直交する方向に所定の角度傾斜した状態で移動することを特徴とする請求項11に記載の基板処理方法。 12. The substrate processing method according to claim 11 , wherein the substrate is moved in a state inclined at a predetermined angle with respect to the horizontal direction in a direction orthogonal to the substrate moving direction. 請求項1乃至請求項10のいずれか1項に記載の基板処理装置を用いて基板を乾燥させることを特徴とする基板の製造方法。 A method for manufacturing a substrate, comprising drying the substrate using the substrate processing apparatus according to claim 1 . 請求項11乃至請求項19のいずれか1項に記載の基板処理方法を用いて基板を乾燥させることを特徴とする基板の製造方法。 A method for manufacturing a substrate, comprising drying the substrate using the substrate processing method according to any one of claims 11 to 19 .
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