JP4291521B2 - 半導体受光素子、半導体受光装置、半導体装置、光モジュール及び光伝送装置 - Google Patents

半導体受光素子、半導体受光装置、半導体装置、光モジュール及び光伝送装置 Download PDF

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JP4291521B2
JP4291521B2 JP2001084307A JP2001084307A JP4291521B2 JP 4291521 B2 JP4291521 B2 JP 4291521B2 JP 2001084307 A JP2001084307 A JP 2001084307A JP 2001084307 A JP2001084307 A JP 2001084307A JP 4291521 B2 JP4291521 B2 JP 4291521B2
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Prior art keywords
light receiving
semiconductor
semiconductor light
receiving element
substrate
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Japanese (ja)
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JP2002289906A5 (enExample
JP2002289906A (ja
Inventor
昭久 寺野
康信 松岡
滋久 田中
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日本オプネクスト株式会社
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Priority to JP2001084307A priority Critical patent/JP4291521B2/ja
Priority to US09/905,956 priority patent/US6670600B2/en
Publication of JP2002289906A publication Critical patent/JP2002289906A/ja
Publication of JP2002289906A5 publication Critical patent/JP2002289906A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP2001084307A 2001-03-23 2001-03-23 半導体受光素子、半導体受光装置、半導体装置、光モジュール及び光伝送装置 Expired - Lifetime JP4291521B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001084307A JP4291521B2 (ja) 2001-03-23 2001-03-23 半導体受光素子、半導体受光装置、半導体装置、光モジュール及び光伝送装置
US09/905,956 US6670600B2 (en) 2001-03-23 2001-07-17 Semiconductor photodetector with ohmic contact areas formed to prevent incident light from resolving the areas, semiconductor photo receiver and semiconductor device installed with the semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001084307A JP4291521B2 (ja) 2001-03-23 2001-03-23 半導体受光素子、半導体受光装置、半導体装置、光モジュール及び光伝送装置

Publications (3)

Publication Number Publication Date
JP2002289906A JP2002289906A (ja) 2002-10-04
JP2002289906A5 JP2002289906A5 (enExample) 2005-09-08
JP4291521B2 true JP4291521B2 (ja) 2009-07-08

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JP2001084307A Expired - Lifetime JP4291521B2 (ja) 2001-03-23 2001-03-23 半導体受光素子、半導体受光装置、半導体装置、光モジュール及び光伝送装置

Country Status (2)

Country Link
US (1) US6670600B2 (enExample)
JP (1) JP4291521B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2676228C1 (ru) * 2018-02-19 2018-12-26 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Мощный импульсный свч фотодетектор

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4166471B2 (ja) * 2001-12-28 2008-10-15 三菱電機株式会社 光モジュール
JP2003258272A (ja) * 2002-02-27 2003-09-12 Sumitomo Electric Ind Ltd 光受信モジュール
US7224910B2 (en) * 2002-10-25 2007-05-29 Gennum Corporation Direct attach optical receiver module and method of testing
US7391005B2 (en) * 2002-10-25 2008-06-24 Gennum Corporation Direct attach optical receiver module and method of testing
JP4306508B2 (ja) * 2004-03-29 2009-08-05 三菱電機株式会社 アバランシェフォトダイオード
JP2006203050A (ja) * 2005-01-21 2006-08-03 National Institute Of Information & Communication Technology 極微弱光検出器および極微弱光撮像装置
JP2007005591A (ja) * 2005-06-24 2007-01-11 Toshiba Corp 半導体発光素子
JP2008066702A (ja) * 2006-08-10 2008-03-21 Matsushita Electric Ind Co Ltd 固体撮像素子及びカメラ
US7755123B2 (en) * 2007-08-24 2010-07-13 Aptina Imaging Corporation Apparatus, system, and method providing backside illuminated imaging device
TWI412149B (zh) * 2010-12-16 2013-10-11 Univ Nat Central Laser energy conversion device
CN103030106B (zh) * 2011-10-06 2015-04-01 清华大学 三维纳米结构阵列
JP2013125847A (ja) * 2011-12-14 2013-06-24 Sumitomo Electric Ind Ltd 受光素子、その製造方法、光学装置
JP5904901B2 (ja) * 2012-08-08 2016-04-20 日本電信電話株式会社 光結合回路素子及びその作製方法
WO2015167524A1 (en) * 2014-04-30 2015-11-05 Hewlett-Packard Development Company, L.P. Mirrors including reflective and second layers disposed on photodetectors
JP6362142B2 (ja) * 2015-09-15 2018-07-25 日本電信電話株式会社 ゲルマニウム受光器
JP6862941B2 (ja) 2017-03-09 2021-04-21 三菱電機株式会社 裏面入射型受光素子およびその製造方法
JP6813690B2 (ja) * 2017-09-06 2021-01-13 日本電信電話株式会社 アバランシェフォトダイオードおよびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3712503A1 (de) * 1987-04-13 1988-11-03 Nukem Gmbh Solarzelle
US5164809A (en) * 1989-04-21 1992-11-17 The Regents Of The University Of Calif. Amorphous silicon radiation detectors
US5149963A (en) * 1990-07-03 1992-09-22 Parker Hannifin Corporation Fiber-optic position sensor including photovoltaic bi-cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2676228C1 (ru) * 2018-02-19 2018-12-26 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Мощный импульсный свч фотодетектор

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US20020135036A1 (en) 2002-09-26
US6670600B2 (en) 2003-12-30
JP2002289906A (ja) 2002-10-04

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