JP4287743B2 - 蛍光体層の製造方法 - Google Patents
蛍光体層の製造方法 Download PDFInfo
- Publication number
- JP4287743B2 JP4287743B2 JP2003523706A JP2003523706A JP4287743B2 JP 4287743 B2 JP4287743 B2 JP 4287743B2 JP 2003523706 A JP2003523706 A JP 2003523706A JP 2003523706 A JP2003523706 A JP 2003523706A JP 4287743 B2 JP4287743 B2 JP 4287743B2
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- JP
- Japan
- Prior art keywords
- phosphor layer
- temperature
- amount
- local
- luminescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7732—Halogenides
- C09K11/7733—Halogenides with alkali or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Luminescent Compositions (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
- Physical Vapour Deposition (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Description
a)蒸気相から蛍光体層を基板上に析出し、
b)その発光量を場所的分解能をもって測定し、
c)蛍光体層の発光量が所定の値より低い箇所を局所的に焼戻しする。
Claims (14)
- a)蛍光体層(4)を蒸気相から基板(3)上に析出し、
b)その発光量を場所的分解能をもって測定し、
c)蛍光体層(4)の発光量が所定の値より低い箇所を局所的に焼戻しする
各処理により蛍光体層(4)を製造する方法。 - 蛍光体層(4)の発光量が全ての部位で所定の値よりも最高で10%低くなる迄処理bとcを繰返す請求項1記載の方法。
- 上記の所定の値が処理bで測定した最大値である請求項1又は2記載の方法。
- 各繰返しの際に、局所的に焼戻しする際の第1の温度を、先行して行った局所的焼戻しの温度よりも高く選択する請求項1から3の1つに記載の方法。
- 各繰返しの際に、局所的に焼戻しする際の第1の温度を、先行して行った局所的焼戻しの温度よりも20〜50℃前後ずつ高く選択する請求項1から4の1つに記載の方法。
- 蛍光体層(4)全体を、処理bを行う前に約150〜250℃の範囲の第2の温度で焼戻す請求項1から5の1つに記載の方法。
- 処理cの第1の温度を、第2の温度より高く選択する請求項1から6の1つに記載の方法。
- 局所的焼戻しのため多数の発熱体(2)から構成される熱アレイ(1)を使用し、その際各発熱体(2)を、予め各箇所で測定した発光量の値に応じて算出した第1の温度に調整する請求項1から7の1つに記載の方法。
- 発光量を場所的分解能をもって測定するため、スキャナ(6)又はCCDカメラを使用する請求項1から8の1つに記載の方法。
- 上記の蛍光体層(4)を、ドープされたアルカリハロゲン化物から製造する請求項1から9の1つに記載の方法。
- ドープされたアルカリハロゲン化物を、CsBr:Eu、CsI:Tl、CsI:Na、RbBr:Eu及びRbBr:Tlの群から選択する請求項10記載の方法。
- 蛍光体層(4)の発光量を場所的分解能をもって測定する装置(6)、多数の個別に制御可能な発熱体(2)から構成される熱アレイ(1)及び発光量の測定値に応じて発熱体(2)を制御する装置(5)を備えた請求項1から11の1つに記載の方法を実施するための設備。
- 蛍光体層(4)を照射するため、X線源(8)を備えた請求項12記載の設備。
- 発光量を場所的分解能をもって測定するための上記装置が、CCDカメラ又はLED素子を備えたスキャナを有する請求項12又は13記載の設備。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10141522A DE10141522C1 (de) | 2001-08-24 | 2001-08-24 | Verfahren zur Herstellung einer Leuchtstoffschicht |
PCT/DE2002/003078 WO2003018863A2 (de) | 2001-08-24 | 2002-08-22 | Verfahren zur herstellung einer leuchtstoffschicht |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005500546A JP2005500546A (ja) | 2005-01-06 |
JP4287743B2 true JP4287743B2 (ja) | 2009-07-01 |
Family
ID=7696488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003523706A Expired - Fee Related JP4287743B2 (ja) | 2001-08-24 | 2002-08-22 | 蛍光体層の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20040131767A1 (ja) |
EP (1) | EP1419282B1 (ja) |
JP (1) | JP4287743B2 (ja) |
AU (1) | AU2002331557A1 (ja) |
DE (2) | DE10141522C1 (ja) |
WO (1) | WO2003018863A2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003250307A1 (en) * | 2002-07-30 | 2004-03-03 | Siemens Aktiengesellschaft | Method for vapor-depositing a substrate with a needle-shaped x-ray fluorescent material, and x-ray fluorescent material |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT649689A (ja) * | 1960-07-05 | |||
US3984679A (en) * | 1975-02-18 | 1976-10-05 | Gte Laboratories Incorporated | Coating thickness monitor for multiple layers |
US4024291A (en) * | 1975-06-17 | 1977-05-17 | Leybold-Heraeus Gmbh & Co. Kg | Control of vapor deposition |
FR2586508B1 (fr) * | 1985-08-23 | 1988-08-26 | Thomson Csf | Scintillateur d'ecran d'entree de tube intensificateur d'images radiologiques et procede de fabrication d'un tel scintillateur |
JPS6364290A (ja) * | 1986-09-05 | 1988-03-22 | 株式会社日立製作所 | El素子製造装置 |
US5180610A (en) * | 1988-11-15 | 1993-01-19 | Siemens Aktiengesellschaft | Method for manufacturing a luminescent storage screen having a phophor which is transparent to read-out radiation |
DE4125200A1 (de) * | 1991-07-30 | 1993-02-04 | Siemens Ag | Verfahren zur herstellung einer leuchtstoffschicht auf einem substrat |
JPH05159878A (ja) * | 1991-12-02 | 1993-06-25 | Hitachi Ltd | 薄膜蛍光体の光アニール方法及び光アニール装置 |
JPH07240149A (ja) * | 1994-02-25 | 1995-09-12 | Nec Kansai Ltd | カラー陰極線管用パネル加熱装置 |
DE4429013C2 (de) * | 1994-08-16 | 2001-08-09 | Siemens Ag | Vorrichtung zum Bedampfen oder Sputtern eines Substrates |
DE19516450C1 (de) * | 1995-05-04 | 1996-08-08 | Siemens Ag | Verfahren und Vorrichtung zum Herstellen einer Leuchtschicht aus Cesiumiodid-Thallium auf einem Substrat in einer Bedampfungsanlage |
WO1999031509A1 (en) * | 1997-11-27 | 1999-06-24 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Improved method for the identification and characterization of interacting molecules using automation |
US6100506A (en) * | 1999-07-26 | 2000-08-08 | International Business Machines Corporation | Hot plate with in situ surface temperature adjustment |
US20010007352A1 (en) * | 1999-12-27 | 2001-07-12 | Erich Hell | Binderless storage phosphor screen with needle shaped crystals |
US6730243B2 (en) * | 2000-12-22 | 2004-05-04 | Afga-Gevaert | Cesium halide storage phosphor with narrow emission spectrum upon UV-excitation |
US7026631B2 (en) * | 2002-05-31 | 2006-04-11 | Konica Corporation | Radiation image conversion panel and preparation method thereof |
JP2004340892A (ja) * | 2003-05-19 | 2004-12-02 | Fuji Photo Film Co Ltd | 放射線像変換パネルおよびその製造方法 |
-
2001
- 2001-08-24 DE DE10141522A patent/DE10141522C1/de not_active Expired - Fee Related
-
2002
- 2002-08-22 DE DE50202067T patent/DE50202067D1/de not_active Expired - Lifetime
- 2002-08-22 WO PCT/DE2002/003078 patent/WO2003018863A2/de active IP Right Grant
- 2002-08-22 AU AU2002331557A patent/AU2002331557A1/en not_active Abandoned
- 2002-08-22 JP JP2003523706A patent/JP4287743B2/ja not_active Expired - Fee Related
- 2002-08-22 EP EP02767115A patent/EP1419282B1/de not_active Expired - Fee Related
- 2002-08-22 US US10/476,679 patent/US20040131767A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE10141522C1 (de) | 2003-03-06 |
WO2003018863A3 (de) | 2003-05-22 |
EP1419282B1 (de) | 2005-01-19 |
DE50202067D1 (de) | 2005-02-24 |
EP1419282A2 (de) | 2004-05-19 |
US20040131767A1 (en) | 2004-07-08 |
WO2003018863A2 (de) | 2003-03-06 |
AU2002331557A1 (en) | 2003-03-10 |
JP2005500546A (ja) | 2005-01-06 |
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