JP4285751B2 - Wiring board and manufacturing method thereof - Google Patents

Wiring board and manufacturing method thereof Download PDF

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JP4285751B2
JP4285751B2 JP2004153160A JP2004153160A JP4285751B2 JP 4285751 B2 JP4285751 B2 JP 4285751B2 JP 2004153160 A JP2004153160 A JP 2004153160A JP 2004153160 A JP2004153160 A JP 2004153160A JP 4285751 B2 JP4285751 B2 JP 4285751B2
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pad
ceramic substrate
via conductor
wiring pattern
wiring board
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JP2005340257A (en
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眞司 村田
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Alps Alpine Co Ltd
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Alps Electric Co Ltd
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Description

本発明は種々の電子回路ユニット等に使用される配線基板、及びその製造方法に関する。   The present invention relates to a wiring board used for various electronic circuit units and the like, and a manufacturing method thereof.

従来の配線基板の図面を説明すると、図８は従来の配線基板の概要を示す断面図、図９は従来の配線基板の要部の拡大断面図、図１０は従来の配線基板に係り、配線パターンの第１の状態を示す要部の拡大平面図、図１１は従来の配線基板に係り、配線パターンの第２の状態を示す要部の拡大平面図である。   FIG. 8 is a sectional view showing an outline of a conventional wiring board, FIG. 9 is an enlarged sectional view of a main part of the conventional wiring board, and FIG. 10 relates to the conventional wiring board. FIG. 11 is an enlarged plan view of a main part showing a second state of a wiring pattern according to a conventional wiring board, and FIG. 11 is an enlarged plan view of the main part showing a first state of the pattern.

次に、従来の配線基板の構成を図８〜図１１に基づいて説明すると、複数枚が積層され、低温焼成によって形成されたセラミック基板５１には、銀や銀を含む金属からなる複数のビア導体５２が設けられている。   Next, the configuration of the conventional wiring board will be described with reference to FIGS. 8 to 11. A plurality of vias made of silver or a metal containing silver are provided in the ceramic substrate 51, which is formed by laminating and low-temperature firing. A conductor 52 is provided.

銀を含まない金属からなる配線パターン５３は、セラミック基板５１の表面から露出したビア導体５２の端面５２ａに接続されるランド部５３ａと、このランド部５３ａから引き出される配線部５３ｂとで形成されている。
そして、この配線パターン５３は、セラミック基板５１が焼成された後、セラミック基板５１上に形成されて、ランド部５３ａがビア導体５２の端面５２ａに接続されるようになっている。（例えば、特許文献１参照） A wiring pattern 53 made of a metal not containing silver is formed by a land portion 53a connected to the end face 52a of the via conductor 52 exposed from the surface of the ceramic substrate 51, and a wiring portion 53b drawn from the land portion 53a. Yes.
The wiring pattern 53 is formed on the ceramic substrate 51 after the ceramic substrate 51 is fired, and the land portion 53 a is connected to the end surface 52 a of the via conductor 52. (For example, see Patent Document 1)

一般に、配線パターン５３の高密度化を図って、配線基板の小型化を行うために、配線パターン５３のランド部５３ａは、ビア導体５２の端面５２ａよりやや大きめの面積となっている。   Generally, in order to increase the density of the wiring pattern 53 and reduce the size of the wiring board, the land portion 53a of the wiring pattern 53 has a slightly larger area than the end face 52a of the via conductor 52.

その結果、従来の配線基板のように、配線パターン５３のランド部５３ａがビア導体５２の端面５２ａに接続されるものにあっては、セラミック基板５１が焼成によって収縮するため、図１０に示すように、ビア導体５２の端面５２ａがランド部５３ａで覆われたものや、図１１に示すように、ビア導体５２とランド部５３との間で位置ずれを起こし、ビア導体５２の端面５２ａがランド部５３ａから露出するものがある。   As a result, in the case where the land portion 53a of the wiring pattern 53 is connected to the end surface 52a of the via conductor 52 as in the conventional wiring substrate, the ceramic substrate 51 contracts by firing, and as shown in FIG. Further, the end surface 52a of the via conductor 52 is covered with the land portion 53a, or as shown in FIG. 11, the positional displacement occurs between the via conductor 52 and the land portion 53, and the end surface 52a of the via conductor 52 is landed. Some are exposed from the portion 53a.

そして、ビア導体５２の端面５２ａがランド部５３ａから露出した配線基板を使用すると、高密度化によって配線パターン５３間が狭くなっているため、銀や銀を含む金属からなるビア導体５２の銀の移行（マイグレーション）が生じて、配線パターン５３間でショートを起こす事態があった。   When a wiring board having an end surface 52a of the via conductor 52 exposed from the land portion 53a is used, the space between the wiring patterns 53 is narrowed due to high density, and therefore the silver of the via conductor 52 made of silver or a metal containing silver is used. There was a situation where a short circuit occurred between the wiring patterns 53 due to migration.

次に、従来の配線基板の製造方法を説明すると、先ず、複数枚のセラミックのグリーンシートを積層すると共に、このグリーンシートにビア導体５２を形成し、次に、この状態で、グリーンシートをビア導体５２と共に焼成すると、焼成されたセラミック基板５１が形成される。
この時、グリーンシートは焼成によって収縮するため、ビア導体５２の位置にバラツキが生じる。 Next, a conventional method for manufacturing a wiring board will be described. First, a plurality of ceramic green sheets are laminated, and via conductors 52 are formed on the green sheets. When fired together with the conductor 52, the fired ceramic substrate 51 is formed.
At this time, since the green sheet shrinks by firing, the position of the via conductor 52 varies.

次に、セラミック基板５１が外形を基準として位置決めされた状態で、セラミック基板５１の表面には、配線パターン５３が印刷等によって形成され、これによって、ランド部５３ａがビア導体５２の端面５２ａに接続されるようになって、配線基板の製造が完了する。
その結果、図１０に示すように、ビア導体５２の端面５２がランド部５３ａで覆われたものや、図１１に示すように、ビア導体５２の端面５２ａがランド部５３ａから露出するものがある。 Next, in a state where the ceramic substrate 51 is positioned with respect to the outer shape, a wiring pattern 53 is formed on the surface of the ceramic substrate 51 by printing or the like, whereby the land portion 53a is connected to the end surface 52a of the via conductor 52. Thus, the production of the wiring board is completed.
As a result, as shown in FIG. 10, the end surface 52 of the via conductor 52 is covered with the land portion 53a, and as shown in FIG. 11, the end surface 52a of the via conductor 52 is exposed from the land portion 53a. .

特開２００２−３６８４２３号公報JP 2002-368423 A

従来の配線基板、及びその製造方法は、配線パターン５３のランド部５３ａがビア導体５２の端面５２ａに接続されるため、セラミック基板５１が焼成によって収縮して、ビア導体５２とランド部５３との間で位置ずれを起こし、ビア導体５２の端面５２ａがランド部５３ａから露出するという問題がある。   In the conventional wiring board and the manufacturing method thereof, since the land portion 53a of the wiring pattern 53 is connected to the end face 52a of the via conductor 52, the ceramic substrate 51 contracts by firing, and the via conductor 52 and the land portion 53 are separated. There is a problem that the end face 52a of the via conductor 52 is exposed from the land portion 53a.

そして、ビア導体５２の端面５２ａがランド部５３ａから露出した配線基板を使用すると、高密度化によって配線パターン５３間が狭くなっているため、銀や銀を含む金属からなるビア導体５２の銀の移行（マイグレーション）が生じて、配線パターン５３間でショートを起こすものであった。   When a wiring board having an end surface 52a of the via conductor 52 exposed from the land portion 53a is used, the space between the wiring patterns 53 is narrowed due to high density, and therefore the silver of the via conductor 52 made of silver or a metal containing silver is used. Migration (migration) occurred, causing a short circuit between the wiring patterns 53.

そこで、本発明はビア導体の露出が無く、電気的なショートの無い配線基板、及びその製造方法を提供することを目的とする。   Accordingly, an object of the present invention is to provide a wiring board without exposure of a via conductor and without an electrical short, and a manufacturing method thereof.

上記課題を解決するための第１の解決手段として、ビア導体が設けられたセラミック基板と、前記セラミック基板の焼成前に、前記セラミック基板の表面から露出する前記ビア導体の全端面を覆うパッドと、前記セラミック基板の焼成後に前記セラミック基板上に形成され、前記ビア導体及び前記パッドに導通する配線パターンとを備え、前記ビア導体は、銀、或いは銀を含む金属で形成され、前記パッド及び前記配線パターンが、銀を含まない金属からなる構成とした。 As a first means for solving the above problems, a ceramic substrate provided with via conductors, and a pad that covers the entire end surface of the via conductor exposed from the surface of the ceramic substrate before firing the ceramic substrate; And a wiring pattern formed on the ceramic substrate after firing the ceramic substrate, and conducting to the via conductor and the pad , wherein the via conductor is formed of silver or a metal containing silver, the pad and the pad wiring pattern, and Ru and configuration name from the metal that does not contain silver.

また、第２の解決手段として、前記パッドは、ニッケル、チタン、金系、或いは銅系の金属で形成されると共に、前記配線パターンは、銅系、或いはニッケルの金属で形成された構成とした。   As a second solution, the pad is made of nickel, titanium, gold or copper metal, and the wiring pattern is made of copper or nickel metal. .

また、第３の解決手段として、ビア導体が設けられたセラミック基板と、前記セラミック基板の焼成前に、前記セラミック基板の表面から露出する前記ビア導体の全端面を覆うパッドと、前記セラミック基板の焼成後に前記パッドの全外表面に設けられる被覆部と、前記セラミック基板の焼成後に前記セラミック基板上に形成され、前記ビア導体、前記パッド及び前記被覆部に導通する配線パターンとを備え、前記ビア導体は、銀、或いは銀を含む金属で形成され、前記パッド、前記被覆部及び前記配線パターンが、銀を含まない金属からなる構成とした。 Further, as a third solving means, a ceramic substrate provided with via conductors, a pad that covers the entire end surface of the via conductor exposed from the surface of the ceramic substrate before firing the ceramic substrate, A coating provided on the entire outer surface of the pad after firing ; and a wiring pattern formed on the ceramic substrate after firing of the ceramic substrate and electrically connected to the via conductor, the pad, and the coating. conductor, silver, or formed of a metal containing silver, the pad, the cover portion and the wiring pattern, and Ru and configuration name of a metal not containing silver.

また、第４の解決手段として、前記パッドは、銅系の金属で形成されると共に、前記被覆部は、ニッケル、チタン、金系、或いは銅系の金属で形成され、前記配線パターンは、銅系、或いはニッケルの金属で形成された構成とした。 As a fourth solution, the pad is formed of a copper- based metal, the covering portion is formed of nickel, titanium, gold-based, or copper-based metal, and the wiring pattern is formed of copper. The structure was formed of a system or nickel metal.

また、第５の解決手段として、請求項１、又は２記載の配線基板を有し、前記セラミック基板には、前記ビア導体と、このビア導体の全端面を覆う前記パッドが設けられた状態で、前記セラミック基板が焼成された後、前記配線パターンが前記パッドに導通した状態で前記セラミック基板上に形成された製造方法とした。
また、第６の解決手段として、前記パッドが厚膜によって形成されると共に、前記配線パターンが薄膜で形成された製造方法とした。 As a fifth solution, the wiring board according to claim 1 or 2 is provided, and the ceramic substrate is provided with the via conductor and the pad covering the entire end surface of the via conductor. Then, after the ceramic substrate is fired, the wiring pattern is formed on the ceramic substrate in a state of being electrically connected to the pad.
As a sixth solving means, the manufacturing method is such that the pad is formed of a thick film and the wiring pattern is formed of a thin film.

また、第７の解決手段として、請求項３、又は４記載の配線基板を有し、前記セラミック基板には、前記ビア導体と、このビア導体の全端面を覆う前記パッドが設けられた状態で、前記セラミック基板が焼成された後、前記パッド部の全外表面には前記被覆部が設けられ、しかる後、前記配線パターンが前記被覆部に導通した状態で前記セラミック基板上に形成された製造方法とした。   As a seventh solution, the wiring board according to claim 3 or 4 is provided, and the ceramic substrate is provided with the via conductor and the pad covering the entire end face of the via conductor. After the ceramic substrate is fired, the covering portion is provided on the entire outer surface of the pad portion, and then the wiring pattern is formed on the ceramic substrate in a state of being electrically connected to the covering portion. It was a method.

また、第８の解決手段として、前記被覆部がメッキによって形成された製造方法とした。
また、第９の解決手段として、前記パッドが厚膜によって形成されると共に、前記配線パターンが薄膜で形成された製造方法とした。 Further, as an eighth solving means, a manufacturing method in which the covering portion is formed by plating.
As a ninth solution, the manufacturing method is such that the pad is formed of a thick film and the wiring pattern is formed of a thin film.

本発明の配線基板は、ビア導体が設けられたセラミック基板と、セラミック基板の焼成前に、セラミック基板の表面から露出するビア導体の全端面を覆うパッドと、セラミック基板の焼成後にセラミック基板上に形成され、ビア導体及びパッドに導通する配線パターンとを備え、ビア導体は、銀、或いは銀を含む金属で形成され、パッド及び配線パターンが、銀を含まない金属からなるため、ビア導体の端面は、パッドによって塞がれてセラミック基板の表面から露出することが無く、従って、ビア導体の銀のマイグレーションによる配線パターン間でのショートが無くなる。
また、焼成によってビア導体の位置ずれが生じても、配線パターンは、ビア導体の端面を塞ぐパッドに確実に接触させることができて、精度の良い配線が得られる。 The wiring board of the present invention includes a ceramic substrate provided with via conductors, a pad that covers all end surfaces of the via conductor exposed from the surface of the ceramic substrate before firing the ceramic substrate, and a ceramic substrate after firing the ceramic substrate. is formed, and a wiring pattern electrically connected to the via conductors and the pad, the via conductor is silver, or formed of a metal containing silver, pads and because the wiring pattern, silver that do a metal containing no, via conductors The end face of the conductive film is not covered with the pad and exposed from the surface of the ceramic substrate. Therefore, there is no short circuit between the wiring patterns due to silver migration of the via conductor.
Further, even if the via conductor is displaced due to firing, the wiring pattern can be reliably brought into contact with a pad that closes the end face of the via conductor, and a highly accurate wiring can be obtained.

また、パッドは、ニッケル、チタン、金系、或いは銅系の金属で形成されると共に、配線パターンは、銅系、或いはニッケルの金属で形成されたため、パッドによって銀のマイグレーションを確実に防止できると共に、配線パターンの形成の容易なものが得られる。   In addition, the pad is made of nickel, titanium, gold-based or copper-based metal, and the wiring pattern is formed of copper-based or nickel metal, so that the migration of silver can be reliably prevented by the pad. As a result, a wiring pattern can be easily formed.

また、ビア導体が設けられたセラミック基板と、セラミック基板の焼成前に、セラミック基板の表面から露出するビア導体の全端面を覆うパッドと、セラミック基板の焼成後にパッドの全外表面に設けられる被覆部と、セラミック基板の焼成後にセラミック基板上に形成され、ビア導体、パッド及び被覆部に導通する配線パターンとを備え、ビア導体は、銀、或いは銀を含む金属で形成され、パッド、被覆部及び配線パターンが、銀を含まない金属からなるため、ビア導体の端面は、パッドによって塞がれてセラミック基板の表面から露出することが無く、ビア導体の銀のマイグレーションによる配線パターン間でのショートが無くなり、且つ、ビア導体とパッドのマイグレーションは、被覆部によっても防止されるようになって、配線パターン間でのショートが無くなる。
また、焼成によってビア導体の位置ずれが生じても、配線パターンは、パッドの表面に設けられた被覆部に確実に接触させることができて、精度の良い配線が得られる。 Also, a ceramic substrate provided with via conductors, a pad covering all end surfaces of the via conductor exposed from the surface of the ceramic substrate before firing the ceramic substrate, and a coating provided on the entire outer surface of the pad after firing the ceramic substrate And a wiring pattern that is formed on the ceramic substrate after firing the ceramic substrate and is electrically connected to the via conductor, the pad, and the covering portion . The via conductor is formed of silver or a metal containing silver, and the pad, covering portion. and the wiring pattern, because silver that do a metal that does not contain, the end face of the via conductor, not be exposed from the obstructed by the surface of the ceramic substrate by the pad, between the wiring pattern by silver migration via conductors there is no short, and the migration of the via conductors and the pad is adapted to be prevented by the covering portion, the wiring pattern Short of between emissions is eliminated.
Further, even if the via conductor is displaced due to firing, the wiring pattern can be reliably brought into contact with the covering portion provided on the surface of the pad, and an accurate wiring can be obtained.

また、パッドは、銅系の金属で形成されると共に、被覆部は、ニッケル、チタン、金系、或いは銅系の金属で形成され、配線パターンは、銅系、或いはニッケルの金属で形成されたため、被覆部によっても銀のマイグレーションを確実に防止できると共に、配線パターンの形成の容易なものが得られる。 In addition, the pad is made of copper- based metal, the covering portion is made of nickel, titanium, gold-based, or copper-based metal, and the wiring pattern is formed of copper-based or nickel metal. , the migration of silver can be reliably prevented by the covering portion, made easy formation of the wiring pattern.

また、請求項１、又は２記載の配線基板を有し、セラミック基板には、ビア導体と、このビア導体の全端面を覆うパッドが設けられた状態で、セラミック基板が焼成された後、配線パターンがパッドに導通した状態でセラミック基板上に形成されたため、セラミック基板が焼成されて収縮しても、パッドはビア導体の端面を覆った状態が維持できて、ビア導体のマイグレーションによる配線パターン間でのショートが無くなる。
また、焼成によってビア導体の位置ずれが生じても、配線パターンは、ビア導体の端面を塞ぐパッドに確実に接触させることができて、精度の良い配線が得られる。 The wiring board according to claim 1 or 2, wherein the ceramic substrate is provided with a via conductor and a pad that covers all end faces of the via conductor, and then the wiring is performed after the ceramic substrate is fired. Since the pattern was formed on the ceramic substrate in a state of conducting to the pad, even if the ceramic substrate was baked and shrunk, the pad could remain in the state of covering the end surface of the via conductor, and between the wiring patterns due to migration of the via conductor There will be no short circuit.
Further, even if the via conductor is displaced due to firing, the wiring pattern can be reliably brought into contact with a pad that closes the end face of the via conductor, and a highly accurate wiring can be obtained.

また、パッドが厚膜によって形成されると共に、配線パターンが薄膜で形成されたため、パッドと配線パターンの製造の容易なものが得られる。   In addition, since the pad is formed of a thick film and the wiring pattern is formed of a thin film, it is possible to easily manufacture the pad and the wiring pattern.

また、請求項３、又は４記載の配線基板を有し、セラミック基板には、ビア導体と、このビア導体の全端面を覆うパッドが設けられた状態で、セラミック基板が焼成された後、パッド部の全外表面には被覆部が設けられ、しかる後、配線パターンが被覆部に導通した状態でセラミック基板上に形成されたため、セラミック基板が焼成されて収縮しても、パッドはビア導体の端面を覆った状態が維持でき、銀のマイグレーションによる配線パターン間でのショートが無くなると共に、ビア導体とパッドのマイグレーションは、被覆部によっても防止されるようになって、配線パターン間でのショートが無くなる。
また、焼成によってビア導体の位置ずれが生じても、配線パターンは、ビア導体の端面を塞ぐパッドに確実に接触させることができて、精度の良い配線が得られる。 Further, the wiring board according to claim 3 or 4, wherein the ceramic substrate is provided with a via conductor and a pad that covers the entire end face of the via conductor, and the pad is formed after the ceramic substrate is fired. Since the covering portion is provided on the entire outer surface of the portion, and then the wiring pattern is formed on the ceramic substrate in a state of being conductive to the covering portion, even if the ceramic substrate is baked and contracted, the pad is not connected to the via conductor. You can maintain a state of covering the end face, which no short circuit between the wiring patterns due to migration of silver Rutotomoni, via conductor and a migration of the pad is adapted to be prevented by the covering portion, between the wiring pattern Short circuit disappears.
Further, even if the via conductor is displaced due to firing, the wiring pattern can be reliably brought into contact with a pad that closes the end face of the via conductor, and a highly accurate wiring can be obtained.

また、被覆部がメッキによって形成されたため、被覆部の形成が容易で、生産性の良好なものが得られる。   Further, since the covering portion is formed by plating, it is easy to form the covering portion, and a product with good productivity can be obtained.

また、パッドが厚膜によって形成されると共に、配線パターンが薄膜で形成されたため、パッドと配線パターンの製造の容易なものが得られる。   In addition, since the pad is formed of a thick film and the wiring pattern is formed of a thin film, it is possible to easily manufacture the pad and the wiring pattern.

本発明の配線基板、及びその製造方法の図面を説明すると、図１は本発明の配線基板の概要を示す断面図、図２は本発明の配線基板の要部の拡大断面図、図３は本発明の配線基板に係り、配線パターンの第１の状態を示す要部の拡大平面図、図４は本発明の配線基板に係り、配線パターンの第２の状態を示す要部の拡大平面図である。   FIG. 1 is a sectional view showing an outline of the wiring board of the present invention, FIG. 2 is an enlarged sectional view of a main part of the wiring board of the present invention, and FIG. FIG. 4 is an enlarged plan view of the main part showing the first state of the wiring pattern according to the wiring board of the present invention, and FIG. 4 is an enlarged plan view of the main part showing the second state of the wiring pattern according to the wiring board of the present invention. It is.

また、図５は本発明の配線基板の製造方法に係る第１工程を示す説明図、図６は本発明の配線基板の製造方法に係る第２工程を示す説明図、図７は本発明の配線基板の製造方法に係る第３工程を示す説明図である。   5 is an explanatory view showing a first step according to the method for manufacturing a wiring board of the present invention, FIG. 6 is an explanatory view showing a second step according to the method of manufacturing the wiring board of the present invention, and FIG. It is explanatory drawing which shows the 3rd process which concerns on the manufacturing method of a wiring board.

次に、本発明の配線基板の構成を図１〜図４に基づいて説明すると、複数枚が積層され、低温焼成によって形成されたセラミック基板１には、銀や銀を含む金属からなる複数のビア導体２が設けられて、その端面２ａがセラミック基板１の表面から露出している。   Next, the configuration of the wiring board according to the present invention will be described with reference to FIGS. 1 to 4. A plurality of layers are laminated, and the ceramic substrate 1 formed by low-temperature firing includes a plurality of silver and a metal containing silver. A via conductor 2 is provided, and an end surface 2 a thereof is exposed from the surface of the ceramic substrate 1.

銅系、或いは銀系の金属からなるパッド３は、ビア導体２の全端面２ａを覆った状態で、セラミック基板１の表面に厚膜等によって形成されると共に、このパッド３の全外表面には、銀を含まないニッケル、チタン、金系、或いは銅系の金属からなる被覆部４が形成され、この被覆部４は、無電解メッキによって形成されている。   A pad 3 made of a copper-based or silver-based metal is formed on the surface of the ceramic substrate 1 with a thick film or the like so as to cover the entire end surface 2 a of the via conductor 2, and on the entire outer surface of the pad 3. Is formed with a covering portion 4 made of nickel, titanium, gold-based or copper-based metal not containing silver, and the covering portion 4 is formed by electroless plating.

銀を含まない銅系、或いはニッケルからなる配線パターン５は、被覆部４に接続された状態で、厚膜や薄膜によってセラミック基板１の表面に形成されている。 そして、この配線パターン５は、セラミック基板１が焼成された後、セラミック基板１上に形成されて、パッド３上の被覆部４に接続されるようになっている。   The wiring pattern 5 made of copper or nickel not containing silver is formed on the surface of the ceramic substrate 1 with a thick film or a thin film while being connected to the covering portion 4. The wiring pattern 5 is formed on the ceramic substrate 1 after the ceramic substrate 1 is fired, and is connected to the covering portion 4 on the pad 3.

一般に、配線パターン５の高密度化を図って、配線基板の小型化を行うために、パッド３は、ビア導体２の端面２ａよりやや大きめの面積となっているが、本発明の配線基板にあっては、パッド３がビア導体２の端面２ａを塞いだ状態で形成されると共に、このパッド３の外表面には、銀のマイグレーションを防止する被覆部４が設けられいる。   In general, the pad 3 has a slightly larger area than the end face 2a of the via conductor 2 in order to increase the density of the wiring pattern 5 and reduce the size of the wiring board. In this case, the pad 3 is formed in a state in which the end surface 2a of the via conductor 2 is closed, and a covering portion 4 for preventing silver migration is provided on the outer surface of the pad 3.

そして、セラミック基板１が焼成によって収縮した場合、図３に示すように、配線パターン５がビア導体２の中央部に位置したり、或いは、図４に示すように、配線パターン５がビア導体２の外周に位置したりするが、ビア導体２の端面２ａがパッド３によって塞がれ、且つ、パッド３に被覆された被覆部４によって、ビア導体２とパッド３の銀のマイグレーションが防止されると共に、配線パターン５は、被覆部４に確実に接続することができる。   When the ceramic substrate 1 is shrunk by firing, the wiring pattern 5 is located at the center of the via conductor 2 as shown in FIG. 3, or the wiring pattern 5 is connected to the via conductor 2 as shown in FIG. Although the end surface 2a of the via conductor 2 is blocked by the pad 3, the covering portion 4 covered with the pad 3 prevents the silver migration of the via conductor 2 and the pad 3 from each other. At the same time, the wiring pattern 5 can be reliably connected to the covering portion 4.

なお、上記実施例では、被覆部４を設けたもので説明したが、被覆部４を無くしてパッド３のみでも良く、この場合のパッド３は、銀を含まないニッケル、チタン、金系、或いは銅系の金属が使用されるようになっている。   In the above-described embodiment, the case where the covering portion 4 is provided has been described. However, the covering portion 4 may be omitted and only the pad 3 may be used. In this case, the pad 3 may be nickel, titanium, gold-based material containing no silver, Copper-based metals are used.

次に、本発明の配線基板の製造方法を図５〜図７に基づいて説明すると、先ず、図５に示すように、積層されたセラミック基板１を形成するために、複数枚のセラミックのグリーンシートを積層すると共に、このグリーンシートには、ビア導体２を形成し、且つ、ビア導体２の端面２ａを覆った状態で、厚膜によってパッド３を形成する。   Next, a method of manufacturing a wiring board according to the present invention will be described with reference to FIGS. 5 to 7. First, as shown in FIG. 5, a plurality of ceramic greens are formed to form a laminated ceramic substrate 1. The sheet is laminated, and the via conductor 2 is formed on the green sheet, and the pad 3 is formed with a thick film in a state where the end surface 2a of the via conductor 2 is covered.

次に、この状態で、グリーンシートがビア導体２、パッド３と共に焼成されると、焼成されたセラミック基板１が形成される。
この時、グリーンシートは焼成によって収縮して、ビア導体２の位置にバラツキが生じるが、ビア導体２の端面２ａは、パッド３によって塞がれた状態が維持されるようになる。 Next, when the green sheet is fired together with the via conductors 2 and the pads 3 in this state, the fired ceramic substrate 1 is formed.
At this time, the green sheet shrinks by firing, and the position of the via conductor 2 varies, but the end surface 2 a of the via conductor 2 is maintained in the state of being blocked by the pad 3.

次に、図６に示すように無電解メッキによって、被覆部４がパッド３の外表面に形成された後、図７に示すように、セラミック基板１が外形を基準として位置決めされた状態で、セラミック基板１の表面には、配線パターン５が印刷等にる厚膜やスパッタ等による薄膜によって形成され、これによって、配線パターン５が被覆部４に接続されるようになって、配線基板の製造が完了する。   Next, after the covering portion 4 is formed on the outer surface of the pad 3 by electroless plating as shown in FIG. 6, the ceramic substrate 1 is positioned with reference to the outer shape as shown in FIG. On the surface of the ceramic substrate 1, the wiring pattern 5 is formed by a thick film for printing or the like, or a thin film by sputtering or the like, whereby the wiring pattern 5 is connected to the covering portion 4 to manufacture the wiring substrate. Is completed.

その結果、図３に示すように、配線パターン５がビア導体２の中央部に位置したり、或いは、図４に示すように、配線パターン５がビア導体２の外周に位置したりするが、ビア導体２の端面２ａがパッド３によって塞がれ、且つ、パッド３に被覆された被覆部４によって、ビア導体２とパッド３の銀のマイグレーションが防止される。   As a result, the wiring pattern 5 is located at the center of the via conductor 2 as shown in FIG. 3, or the wiring pattern 5 is located at the outer periphery of the via conductor 2 as shown in FIG. The end surface 2 a of the via conductor 2 is blocked by the pad 3, and silver migration of the via conductor 2 and the pad 3 is prevented by the covering portion 4 covered with the pad 3.

なお、上記実施例では、被覆部４を設けたもので説明したが、被覆部４を無くしてパッド３のみでも良く、この場合のパッド３は、銀を含まないニッケル、チタン、金系、或いは銅系の金属が使用されると共に、グリーンシートがビア導体２、パッド３と共に焼成された後、配線パターン５の形成が行われて、配線パターン５がパッド３に接続されるようになっている。   In the above-described embodiment, the case where the covering portion 4 is provided has been described. However, the covering portion 4 may be omitted and only the pad 3 may be used. In this case, the pad 3 may be nickel, titanium, gold-based material containing no silver, or A copper-based metal is used, and after the green sheet is fired together with the via conductor 2 and the pad 3, the wiring pattern 5 is formed so that the wiring pattern 5 is connected to the pad 3. .

本発明の配線基板の概要を示す断面図。Sectional drawing which shows the outline | summary of the wiring board of this invention. 本発明の配線基板の要部の拡大断面図。The expanded sectional view of the principal part of the wiring board of this invention. 本発明の配線基板に係り、配線パターンの第１の状態を示す要部の拡大平面図。The enlarged plan view of the principal part which concerns on the wiring board of this invention and shows the 1st state of a wiring pattern. 本発明の配線基板に係り、配線パターンの第２の状態を示す要部の拡大平面図。The enlarged plan view of the principal part which concerns on the wiring board of this invention and shows the 2nd state of a wiring pattern. 本発明の配線基板の製造方法に係る第１工程を示す説明図。Explanatory drawing which shows the 1st process which concerns on the manufacturing method of the wiring board of this invention. 本発明の配線基板の製造方法に係る第２工程を示す説明図。Explanatory drawing which shows the 2nd process which concerns on the manufacturing method of the wiring board of this invention. 本発明の配線基板の製造方法に係る第３工程を示す説明図。Explanatory drawing which shows the 3rd process which concerns on the manufacturing method of the wiring board of this invention. 従来の配線基板の概要を示す断面図。Sectional drawing which shows the outline | summary of the conventional wiring board. 従来の配線基板の要部の拡大断面図。The expanded sectional view of the principal part of the conventional wiring board. 従来の配線基板に係り、配線パターンの第１の状態を示す要部の拡大平面図。The enlarged plan view of the principal part which shows the 1st state of a wiring pattern concerning the conventional wiring board. 従来の配線基板に係り、配線パターンの第２の状態を示す要部の拡大平面図。The enlarged plan view of the principal part which shows the 2nd state of a wiring pattern in connection with the conventional wiring board.

符号の説明Explanation of symbols

１：セラミック基板
２：ビア導体
２ａ：端面
３：パッド
４：被覆部
５：配線パターン
1: Ceramic substrate 2: Via conductor 2a: End face 3: Pad 4: Covering part 5: Wiring pattern

Claims (9)

ビア導体が設けられたセラミック基板と、前記セラミック基板の焼成前に、前記セラミック基板の表面から露出する前記ビア導体の全端面を覆うパッドと、前記セラミック基板の焼成後に前記セラミック基板上に形成され、前記ビア導体及び前記パッドに導通する配線パターンとを備え、前記ビア導体は、銀、或いは銀を含む金属で形成され、前記パッド及び前記配線パターンが、銀を含まない金属からなることを特徴とする配線基板。 A ceramic substrate provided with via conductors, a pad covering all end faces of the via conductor exposed from the surface of the ceramic substrate before firing the ceramic substrate, and formed on the ceramic substrate after firing the ceramic substrate; , and a wiring pattern electrically connected to the via conductor and the pad, the via conductor is silver, or formed of a metal containing silver, the pad and the wiring pattern, Turkey and such a metal not containing silver A wiring board characterized by. 前記パッドは、ニッケル、チタン、金系、或いは銅系の金属で形成されると共に、前記配線パターンは、銅系、或いはニッケルの金属で形成されたことを特徴とする請求項１記載の配線基板。 2. The wiring board according to claim 1, wherein the pad is made of nickel, titanium, gold-based, or copper-based metal, and the wiring pattern is formed of copper-based or nickel metal. . ビア導体が設けられたセラミック基板と、前記セラミック基板の焼成前に、前記セラミック基板の表面から露出する前記ビア導体の全端面を覆うパッドと、前記セラミック基板の焼成後に前記パッドの全外表面に設けられる被覆部と、前記セラミック基板の焼成後に前記セラミック基板上に形成され、前記ビア導体、前記パッド及び前記被覆部に導通する配線パターンとを備え、前記ビア導体は、銀、或いは銀を含む金属で形成され、前記パッド、前記被覆部及び前記配線パターンが、銀を含まない金属からなることを特徴とする配線基板。 A ceramic substrate provided with via conductors, a pad that covers the entire end surface of the via conductor exposed from the surface of the ceramic substrate before firing the ceramic substrate, and an entire outer surface of the pad after firing the ceramic substrate. A covering portion provided ; and a wiring pattern formed on the ceramic substrate after the ceramic substrate is fired and electrically connected to the via conductor, the pad, and the covering portion , wherein the via conductor includes silver or silver. formed of metal, the pad, the wiring substrate the covering portion and the wiring pattern, characterized by the Turkey such a metal not containing silver. 前記パッドは、銅系の金属で形成されると共に、前記被覆部は、ニッケル、チタン、金系、或いは銅系の金属で形成され、前記配線パターンは、銅系、或いはニッケルの金属で形成されたことを特徴とする請求項３記載の配線基板。 The pad is formed of a copper- based metal, the covering portion is formed of nickel, titanium, gold-based, or copper-based metal, and the wiring pattern is formed of copper-based or nickel metal. The wiring board according to claim 3. 請求項１、又は２記載の配線基板を有し、前記セラミック基板には、前記ビア導体と、このビア導体の全端面を覆う前記パッドが設けられた状態で、前記セラミック基板が焼成された後、前記配線パターンが前記パッドに導通した状態で前記セラミック基板上に形成されたことを特徴とする配線基板の製造方法。 3. The wiring board according to claim 1, wherein the ceramic substrate is baked in a state where the via conductor and the pad covering the entire end surface of the via conductor are provided on the ceramic substrate. A method of manufacturing a wiring board, wherein the wiring pattern is formed on the ceramic substrate in a state of being electrically connected to the pad. 前記パッドが厚膜によって形成されると共に、前記配線パターンが薄膜で形成されたことを特徴とする請求項５記載の配線基板の製造方法。 6. The method of manufacturing a wiring board according to claim 5, wherein the pad is formed of a thick film and the wiring pattern is formed of a thin film. 請求項３、又は４記載の配線基板を有し、前記セラミック基板には、前記ビア導体と、このビア導体の全端面を覆う前記パッドが設けられた状態で、前記セラミック基板が焼成された後、前記パッド部の全外表面には前記被覆部が設けられ、しかる後、前記配線パターンが前記被覆部に導通した状態で前記セラミック基板上に形成されたことを特徴とする配線基板の製造方法。 5. The wiring board according to claim 3, wherein the ceramic substrate is fired in a state where the via conductor and the pad covering the entire end surface of the via conductor are provided on the ceramic substrate. A method of manufacturing a wiring board, wherein the covering portion is provided on the entire outer surface of the pad portion, and then the wiring pattern is formed on the ceramic substrate in a state of being electrically connected to the covering portion. . 前記被覆部がメッキによって形成されたことを特徴とする請求項７記載の配線基板の製造方法。 The method of manufacturing a wiring board according to claim 7, wherein the covering portion is formed by plating. 前記パッドが厚膜によって形成されると共に、前記配線パターンが薄膜で形成されたことを特徴とする請求項７，又は８記載の配線基板の製造方法。 9. The method of manufacturing a wiring board according to claim 7, wherein the pad is formed of a thick film and the wiring pattern is formed of a thin film.
JP2004153160A 2004-05-24 2004-05-24 Wiring board and manufacturing method thereof Expired - Fee Related JP4285751B2 (en)

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