JP4283656B2 - 半導体装置の作製方法、半導体装置及び電子機器 - Google Patents

半導体装置の作製方法、半導体装置及び電子機器 Download PDF

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Publication number
JP4283656B2
JP4283656B2 JP2003411870A JP2003411870A JP4283656B2 JP 4283656 B2 JP4283656 B2 JP 4283656B2 JP 2003411870 A JP2003411870 A JP 2003411870A JP 2003411870 A JP2003411870 A JP 2003411870A JP 4283656 B2 JP4283656 B2 JP 4283656B2
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Prior art keywords
substrate
film
semiconductor
adhesive
metal oxide
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JP2003411870A
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Japanese (ja)
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JP2004214635A (ja
JP2004214635A5 (enExample
Inventor
舜平 山崎
徹 高山
純矢 丸山
由美子 大野
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2004214635A5 publication Critical patent/JP2004214635A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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JP2003411870A 2002-12-18 2003-12-10 半導体装置の作製方法、半導体装置及び電子機器 Expired - Fee Related JP4283656B2 (ja)

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JP2003411870A JP4283656B2 (ja) 2002-12-18 2003-12-10 半導体装置の作製方法、半導体装置及び電子機器

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JP2004214635A5 JP2004214635A5 (enExample) 2007-01-25
JP4283656B2 true JP4283656B2 (ja) 2009-06-24

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4574118B2 (ja) * 2003-02-12 2010-11-04 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP4481040B2 (ja) * 2003-03-07 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2006118293A1 (en) 2005-04-27 2006-11-09 Semiconductor Energy Laboratory Co., Ltd. Wireless chip
JP5089033B2 (ja) 2005-11-04 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2018055838A1 (ja) * 2016-09-23 2018-03-29 株式会社テンシックス 半導体素子の製造方法及び半導体基板
US20250006498A1 (en) * 2021-11-24 2025-01-02 Jsw Aktina System Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3578828B2 (ja) * 1995-03-21 2004-10-20 株式会社半導体エネルギー研究所 表示装置の作製方法
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP3809733B2 (ja) * 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
JP3586558B2 (ja) * 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置

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