JP4234688B2 - ボンディング方法およびボンディング装置 - Google Patents
ボンディング方法およびボンディング装置 Download PDFInfo
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Description
e1=Cr1−Ct・・・(2)
次に、前もつてマイクロコンピュータ22のメモリ22aに記憶されている最小潰し量Wnを読み出して、キャピラリ6の潰し量e1との比較演算を行う(ステップS7)。
e2=Cr2−Ct・・・(3)
次に、前もつてマイクロコンピュータ22のメモリ22aに記憶されている潰し用パラメータの最小潰し量を読み出して、キャピラリ6の潰し量e2との比較演算を行う(ステップS11)。
e3=Cr3−Ct・・・(4)
次に、前もつてマイクロコンピュータ22のメモリ22aに記憶されている潰し用パラメータの最小潰し量Wnを読み出して、キャピラリ6の潰し量e3との比較演算を行う(ステップS25)。
e4=Cr4−Ct・・・(5)
次に、前もつてマイクロコンピュータ22のメモリ22aに記憶されている潰し用パラメータの最小潰し量Wnを読み出して、キャピラリ6の潰し量e4との比較演算を行う(ステップS30)。
e5=Cr5−Ct・・・(6)
次に、前もつてマイクロコンピュータ22のメモリ22aに記憶されている潰し用パラメータの最小潰し量Wnを読み出して、キャピラリ6の潰し量e5との比較演算を行う(ステップS45)。
e6=Cr6−Ct・・・(7)
次に、前もつてマイクロコンピュータ22のメモリ22aに記憶されている潰し用パラメータの最大潰し量Wkを読み出して、キャピラリ6の潰し量e6との比較演算を行う(ステップS50)。
3 ボンディングアーム
4 超音波ホーン
5 超音波振動子
6 キャピラリ
7 カットクランプ
9 リニアモータ
10 エンコーダ
12 ワイヤ
13 放電電極
14 ボール
16 リード
17 半導体チップ(ICチップ)
17a電極(パッド)
20 制御部
21 入力装置
22 マイクロコンピュータ
22aメモリ
25 波形整形回路
26 カウンタ回路
27 超音波制御回路
29 リニアモータ駆動回路
Claims (5)
- ボンディング点でのボールまたはワイヤの接合を行うための超音波パワー、超音波印加時間、荷重からなる接合用パラメータおよび、ボンディング点でのボールまたはワイヤの潰しを行うための超音波パワー、超音波印加時間、荷重からなる潰し用パラメータとを有し、
ボールまたはワイヤが被ボンディング部品であるワークにタッチした位置を検出するステップと、前記接合用パラメータの超音波パワーおよび荷重を印加するステップと、前記接合用パラメータの超音波印加時間経過後にワークにタッチした位置からのキャピラリの沈み込み量を検出するステップとを備え、
検出した前記キャピラリの沈み込み量が前もって設定した最小潰し量未満のときには、前記潰し用パラメータの超音波パワーおよび荷重を印加して、前記潰し用パラメータの超音波印加時間内に前記キャピラリの沈み込み量が最小潰し量以上となるように制御することを特徴とするボンディング方法。 - ボンディング点でのボールまたはワイヤの接合を行うための超音波パワー、超音波印加時間、荷重からなる接合用パラメータおよび、ボンディング点でのボールまたはワイヤの潰しを行うための超音波パワー、超音波印加時間、荷重からなる潰し用パラメータとを有し、
ボールまたはワイヤが被ボンディング部品であるワークにタッチした位置を検出するステップと、前記潰し用パラメータの超音波パワーおよび荷重を印加するステップと、前記潰し用パラメータの超音波印加時間中にワークにタッチした位置からのキャピラリの沈み込み量を常時または一定時間間隔で検出するステップとを備え、
検出した前記キャピラリの沈み込み量が前もって設定した最小潰し量以上になったときに、前記接合用パラメータの超音波パワーおよび荷重を印加して、前記接合用パラメータの超音波印加時間内に前記キャピラリの沈み込み量が前もって設定した最大潰し量以内となるように制御することを特徴とするボンディング方法。 - ボンディング点でのボールまたはワイヤの接合を行うための超音波パワー、超音波印加時間、荷重からなる接合用パラメータおよび、ボンディング点でのボールまたはワイヤの潰しを行うための超音波パワー、超音波印加時間、荷重からなる潰し用パラメータとを有し、
ボールまたはワイヤが被ボンディング部品であるワークにタッチした位置を検出するステップと、前記接合用パラメータの超音波パワーおよび荷重を印加するステップと、前記接合用パラメータの超音波印加時間経過後にワークにタッチした位置からのキャピラリの沈み込み量を検出するステップとを備え、
検出した前記キャピラリの沈み込み量が前もって設定した最小潰し量未満のときには、前記潰し用パラメータの超音波パワーおよび荷重を印加して、前記潰し用パラメータの超音波印加時間内に前記キャピラリの沈み込み量が最小潰し量以上となるように制御することを特徴とするボンディング装置。 - ボンディング点でのボールまたはワイヤの接合を行うための超音波パワー、超音波印加時間、荷重からなる接合用パラメータおよび、ボンディング点でのボールまたはワイヤの潰しを行うための超音波パワー、超音波印加時間、荷重からなる潰し用パラメータとを有し、
ボールまたはワイヤが被ボンディング部品であるワークにタッチした位置を検出するステップと、前記潰し用パラメータの超音波パワーおよび荷重を印加するステップと、前記潰し用パラメータの超音波印加時間中にワークにタッチした位置からのキャピラリの沈み込み量を常時または一定時間間隔で検出するステップとを備え、
検出した前記キャピラリの沈み込み量が前もって設定した最小潰し量以上になったときに、前記接合用パラメータの超音波パワーおよび荷重を印加して、前記接合用パラメータの超音波印加時間内に前記キャピラリの沈み込み量が前もって設定した最大潰し量以内となるように制御することを特徴とするボンディング装置。 - 前記ボンディング装置は、半導体チップ上の接続電極と外部引出し用端子をAuまたはCu若しくはAlのワイヤで接続するワイヤボンダ、若しくは、半導体チップ上の接続電極に突起電極を形成するバンプボンダであることを特徴とする請求項3又は請求項4記載のボンディング装置。
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