JP4234220B2 - 振動検出システム - Google Patents

振動検出システム Download PDF

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Publication number
JP4234220B2
JP4234220B2 JP02889298A JP2889298A JP4234220B2 JP 4234220 B2 JP4234220 B2 JP 4234220B2 JP 02889298 A JP02889298 A JP 02889298A JP 2889298 A JP2889298 A JP 2889298A JP 4234220 B2 JP4234220 B2 JP 4234220B2
Authority
JP
Japan
Prior art keywords
light beam
detector
vibration
transparent
motion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02889298A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10227611A (ja
JPH10227611A5 (enExample
Inventor
ビー．ジャクソン ウォーレン
エイチ．イム マーク
エー．ベルリン アンドリュー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JPH10227611A publication Critical patent/JPH10227611A/ja
Publication of JPH10227611A5 publication Critical patent/JPH10227611A5/ja
Application granted granted Critical
Publication of JP4234220B2 publication Critical patent/JP4234220B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/289—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being transparent or semi-transparent devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Accessory Devices And Overall Control Thereof (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Vibration Prevention Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP02889298A 1997-02-10 1998-02-10 振動検出システム Expired - Fee Related JP4234220B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US798328 1997-02-10
US08/798,328 US5790255A (en) 1997-02-10 1997-02-10 Transparent light beam detectors

Publications (3)

Publication Number Publication Date
JPH10227611A JPH10227611A (ja) 1998-08-25
JPH10227611A5 JPH10227611A5 (enExample) 2005-08-25
JP4234220B2 true JP4234220B2 (ja) 2009-03-04

Family

ID=25173124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02889298A Expired - Fee Related JP4234220B2 (ja) 1997-02-10 1998-02-10 振動検出システム

Country Status (3)

Country Link
US (1) US5790255A (enExample)
EP (1) EP0862225A3 (enExample)
JP (1) JP4234220B2 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6055391A (en) * 1997-02-10 2000-04-25 Xerox Corporation Vibration detection and control system for printers
US6060813A (en) * 1998-01-08 2000-05-09 Xerox Corporation Vibration suppression and electromechanical damping apparatus for electrophotographic printing structures
US6415208B1 (en) * 1999-11-18 2002-07-02 Mannesmann Ag Apparatus and method for surveying rails, in particular running rails for cranes, shelf handling units, running wheel block
US6785011B1 (en) 2000-03-16 2004-08-31 Lexmark International, Inc Optical sensor arrangement for start of scan detection and improved vertical beam alignment range
AU2001287284A1 (en) * 2000-03-20 2001-10-08 Aegis Semiconductor A semitransparent optical detector including a silicon and germanium alloy and method of making
US6879014B2 (en) * 2000-03-20 2005-04-12 Aegis Semiconductor, Inc. Semitransparent optical detector including a polycrystalline layer and method of making
AU2001250907A1 (en) * 2000-03-24 2001-10-08 Aegis Semiconductor A small aperture semitransparent optical detector including edge passivation and method of making
US6670599B2 (en) 2000-03-27 2003-12-30 Aegis Semiconductor, Inc. Semitransparent optical detector on a flexible substrate and method of making
AU2001249311A1 (en) * 2000-03-27 2001-10-08 Aegis Semiconductor A semitransparent optical detector including edge passivation
AU2001272893A1 (en) * 2000-03-27 2001-10-08 Aegis Semiconductor A semitransparent optical detector on a flexible substrate and method of making
US6697094B2 (en) 2001-05-14 2004-02-24 Lexmark International, Inc. Method and apparatus for locating the process postion of a scan line in an electrophotographic machine
JP2004537750A (ja) * 2001-08-02 2004-12-16 アイギス セミコンダクター インコーポレイテッド 同調可能な光学機器
JP4524281B2 (ja) * 2003-04-03 2010-08-11 エスアールアイ インターナショナル リアルタイム振動イメージング方法及び装置
WO2004113887A2 (en) * 2003-06-20 2004-12-29 Aegis Semiconductor, Inc. Thermo-optic filter and infrared sensor using said filter.
KR20070020166A (ko) * 2003-08-26 2007-02-20 레드시프트 시스템즈 코포레이션 적외선 카메라 시스템
US7221827B2 (en) * 2003-09-08 2007-05-22 Aegis Semiconductor, Inc. Tunable dispersion compensator
WO2005036240A1 (en) * 2003-10-07 2005-04-21 Aegis Semiconductor, Inc. Tunable optical filter with heater on a cte-matched transparent substrate
US7151603B2 (en) * 2004-04-30 2006-12-19 Samsung Electronics Co. Ltd. Overhead transparency clarity simulator
TWI455326B (zh) * 2007-09-13 2014-10-01 Omnivision Tech Inc 透射式偵測器、使用該偵測器之系統及其方法
FR2923595B1 (fr) * 2007-11-09 2009-12-11 Thales Sa Capteur optique pour mesurer la deformation au cours du temps d'une structure plane deformable
US20110292406A1 (en) * 2008-10-28 2011-12-01 3Shape A/S Scanner with feedback control
CN104482874B (zh) * 2014-11-21 2017-05-03 上海卫星工程研究所 用于卫星载荷指向相对变形的在轨测量系统
WO2016100986A1 (en) 2014-12-19 2016-06-23 University Of Utah Research Foundation Interferometry system and associated methods
WO2017223542A1 (en) 2016-06-23 2017-12-28 University Of Utah Research Foundation Interferometry system and associated methods
US11162781B2 (en) 2016-06-23 2021-11-02 University Of Utah Research Foundation Interferometry systems and methods
CN108801169B (zh) * 2018-06-25 2020-10-09 上海卫星工程研究所 适用于卫星结构在轨变形测量的一维psd传感器组件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856092B2 (ja) * 1977-05-09 1983-12-13 沖電気工業株式会社 振動検出装置
US4334775A (en) * 1980-04-03 1982-06-15 Western Electric Co., Inc. Method for dynamically determining the horizontal motion and twist of a microwave tower
JPS59109805A (ja) * 1982-12-16 1984-06-25 Matsushita Electric Ind Co Ltd 位置検出装置
US5522375A (en) * 1983-04-05 1996-06-04 New Archery Products Corp. Archery accessory adapter
DE3789505T2 (de) * 1987-09-28 1994-10-20 Kobe Steel Ltd Vorrichtung und Verfahren zum Feststellen der Richtung von einfallendem Licht.
JP2583094B2 (ja) * 1988-03-07 1997-02-19 鐘淵化学工業株式会社 半導体光位置検出器
US4870290A (en) * 1988-09-26 1989-09-26 Honeywell Inc. Object motion sensing and measuring apparatus using position sensing detectors
US5023845A (en) * 1988-10-31 1991-06-11 The United States Of America As Represented By The Secretary Of The Navy Embedded fiber optic beam displacement sensor
DE4322144C2 (de) * 1992-07-03 1997-06-05 Murata Manufacturing Co Vibratoreinheit
DE69321405T2 (de) * 1992-07-10 1999-05-12 Sharp K.K., Osaka Dokumentengrösseerkennungssystem zu verwenden in einem Dokumentenleser
US5383368A (en) * 1992-11-16 1995-01-24 Southwest Research Institute Deflection sensor for robot links
US5321474A (en) * 1993-03-10 1994-06-14 Xerox Corporation Active damping of electrode wire vibration in scavengeless development in a xerographic apparatus
US5418608A (en) * 1993-05-04 1995-05-23 Harbor Branch Oceanographic Institution Inc. Three dimensional mapping systems and methods
JPH0772767A (ja) * 1993-06-15 1995-03-17 Xerox Corp 対話型ユーザ支援システム
US5347132A (en) * 1993-07-30 1994-09-13 Wisconsin Alumni Research Foundation Position sensitive detector providing position information with enhanced reliability and performance
US5530548A (en) * 1994-11-07 1996-06-25 Automotive Systems Laboratory, Inc. Calibratable optical distance sensing system and method
US6055391A (en) * 1997-02-10 2000-04-25 Xerox Corporation Vibration detection and control system for printers

Also Published As

Publication number Publication date
EP0862225A3 (de) 1998-10-14
JPH10227611A (ja) 1998-08-25
US5790255A (en) 1998-08-04
EP0862225A2 (en) 1998-09-02

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