JP4230370B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4230370B2
JP4230370B2 JP2004009877A JP2004009877A JP4230370B2 JP 4230370 B2 JP4230370 B2 JP 4230370B2 JP 2004009877 A JP2004009877 A JP 2004009877A JP 2004009877 A JP2004009877 A JP 2004009877A JP 4230370 B2 JP4230370 B2 JP 4230370B2
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Japan
Prior art keywords
recess
mode region
layer
mode
semiconductor device
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Expired - Fee Related
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JP2004009877A
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English (en)
Japanese (ja)
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JP2005203642A5 (enExample
JP2005203642A (ja
Inventor
一 松田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2004009877A priority Critical patent/JP4230370B2/ja
Priority to US11/034,920 priority patent/US7087957B2/en
Publication of JP2005203642A publication Critical patent/JP2005203642A/ja
Publication of JP2005203642A5 publication Critical patent/JP2005203642A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs

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  • Junction Field-Effect Transistors (AREA)
JP2004009877A 2004-01-16 2004-01-16 半導体装置及びその製造方法 Expired - Fee Related JP4230370B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004009877A JP4230370B2 (ja) 2004-01-16 2004-01-16 半導体装置及びその製造方法
US11/034,920 US7087957B2 (en) 2004-01-16 2005-01-14 Semiconductor device and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004009877A JP4230370B2 (ja) 2004-01-16 2004-01-16 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2005203642A JP2005203642A (ja) 2005-07-28
JP2005203642A5 JP2005203642A5 (enExample) 2005-09-08
JP4230370B2 true JP4230370B2 (ja) 2009-02-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004009877A Expired - Fee Related JP4230370B2 (ja) 2004-01-16 2004-01-16 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US7087957B2 (enExample)
JP (1) JP4230370B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216889A (ja) * 2010-03-31 2011-10-27 Triquint Semiconductor Inc 凹部バリア層を備えた高電子移動度トランジスタ

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340549A (ja) * 2004-05-28 2005-12-08 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US8183595B2 (en) * 2005-07-29 2012-05-22 International Rectifier Corporation Normally off III-nitride semiconductor device having a programmable gate
CN103219375A (zh) * 2006-11-20 2013-07-24 松下电器产业株式会社 半导体装置
KR100849923B1 (ko) 2006-12-06 2008-08-04 한국전자통신연구원 화합물 반도체소자의 제작방법
JP5291309B2 (ja) * 2007-08-13 2013-09-18 株式会社アドバンテスト 高電子移動度トランジスタおよび電子デバイス
KR101522400B1 (ko) * 2008-11-10 2015-05-21 삼성전자주식회사 인버터 및 그를 포함하는 논리소자
TWI509774B (zh) 2009-05-19 2015-11-21 Murata Manufacturing Co A semiconductor switching device, and a method of manufacturing a semiconductor switching device
JP2011165749A (ja) * 2010-02-05 2011-08-25 Panasonic Corp 半導体装置
US9202906B2 (en) 2013-03-14 2015-12-01 Northrop Grumman Systems Corporation Superlattice crenelated gate field effect transistor
TWI615977B (zh) * 2013-07-30 2018-02-21 高效電源轉換公司 具有匹配臨界電壓之積體電路及其製造方法
US9406673B2 (en) * 2013-12-23 2016-08-02 Infineon Technologies Austria Ag Semiconductor component with transistor
US10224426B2 (en) * 2016-12-02 2019-03-05 Vishay-Siliconix High-electron-mobility transistor devices
US11309412B1 (en) * 2017-05-17 2022-04-19 Northrop Grumman Systems Corporation Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168677A (ja) * 1983-03-14 1984-09-22 Fujitsu Ltd 半導体装置及びその製造方法
JPH02148740A (ja) * 1988-11-29 1990-06-07 Fujitsu Ltd 半導体装置及びその製造方法
JP3044396B2 (ja) 1991-01-10 2000-05-22 富士通株式会社 Ｅ／ｄ型電界効果半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216889A (ja) * 2010-03-31 2011-10-27 Triquint Semiconductor Inc 凹部バリア層を備えた高電子移動度トランジスタ

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Publication number Publication date
JP2005203642A (ja) 2005-07-28
US20050189584A1 (en) 2005-09-01
US7087957B2 (en) 2006-08-08

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