JP4229803B2 - 透明導電膜の製造方法 - Google Patents

透明導電膜の製造方法 Download PDF

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Publication number
JP4229803B2
JP4229803B2 JP2003362628A JP2003362628A JP4229803B2 JP 4229803 B2 JP4229803 B2 JP 4229803B2 JP 2003362628 A JP2003362628 A JP 2003362628A JP 2003362628 A JP2003362628 A JP 2003362628A JP 4229803 B2 JP4229803 B2 JP 4229803B2
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Japan
Prior art keywords
substrate
film
transparent conductive
conductive film
target
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Expired - Fee Related
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JP2003362628A
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English (en)
Japanese (ja)
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JP2005126758A (ja
JP2005126758A5 (https=
Inventor
浩伸 井上
忠司 木村
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Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2003362628A priority Critical patent/JP4229803B2/ja
Publication of JP2005126758A publication Critical patent/JP2005126758A/ja
Publication of JP2005126758A5 publication Critical patent/JP2005126758A5/ja
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP2003362628A 2003-10-23 2003-10-23 透明導電膜の製造方法 Expired - Fee Related JP4229803B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003362628A JP4229803B2 (ja) 2003-10-23 2003-10-23 透明導電膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003362628A JP4229803B2 (ja) 2003-10-23 2003-10-23 透明導電膜の製造方法

Publications (3)

Publication Number Publication Date
JP2005126758A JP2005126758A (ja) 2005-05-19
JP2005126758A5 JP2005126758A5 (https=) 2006-11-02
JP4229803B2 true JP4229803B2 (ja) 2009-02-25

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ID=34642194

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JP2003362628A Expired - Fee Related JP4229803B2 (ja) 2003-10-23 2003-10-23 透明導電膜の製造方法

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JP (1) JP4229803B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008156708A (ja) * 2006-12-25 2008-07-10 Idemitsu Kosan Co Ltd 透明導電膜の製造方法
JP5530618B2 (ja) * 2008-10-20 2014-06-25 出光興産株式会社 光起電力素子、および、その製造方法
JP5465859B2 (ja) * 2008-10-20 2014-04-09 出光興産株式会社 光起電力素子、および、その製造方法
JP5465860B2 (ja) * 2008-10-20 2014-04-09 出光興産株式会社 光起電力素子、および、その製造方法
KR20110091683A (ko) * 2008-10-20 2011-08-12 이데미쓰 고산 가부시키가이샤 광기전력 소자 및 그 제조 방법
CN102394210B (zh) * 2011-11-24 2013-12-11 深圳市创益科技发展有限公司 用于制备薄膜太阳能电池透明导电膜的设备及方法
TWI643969B (zh) * 2013-12-27 2018-12-11 Semiconductor Energy Laboratory Co., Ltd. 氧化物半導體的製造方法

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JP2005126758A (ja) 2005-05-19

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