JP4223214B2 - 半導体装置、画像表示装置、及び電子機器 - Google Patents

半導体装置、画像表示装置、及び電子機器 Download PDF

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Publication number
JP4223214B2
JP4223214B2 JP2001366820A JP2001366820A JP4223214B2 JP 4223214 B2 JP4223214 B2 JP 4223214B2 JP 2001366820 A JP2001366820 A JP 2001366820A JP 2001366820 A JP2001366820 A JP 2001366820A JP 4223214 B2 JP4223214 B2 JP 4223214B2
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JP
Japan
Prior art keywords
terminal
switch
electrically connected
input
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001366820A
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English (en)
Japanese (ja)
Other versions
JP2003168782A (ja
JP2003168782A5 (enrdf_load_stackoverflow
Inventor
豊 塩野入
清 加藤
宗広 浅見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2001366820A priority Critical patent/JP4223214B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to US10/305,017 priority patent/US6768348B2/en
Priority to TW091134643A priority patent/TWI280734B/zh
Priority to CNB021547157A priority patent/CN100474435C/zh
Priority to KR1020020075687A priority patent/KR100946943B1/ko
Publication of JP2003168782A publication Critical patent/JP2003168782A/ja
Priority to US10/899,048 priority patent/US7091750B2/en
Publication of JP2003168782A5 publication Critical patent/JP2003168782A5/ja
Priority to US11/458,710 priority patent/US7564271B2/en
Application granted granted Critical
Publication of JP4223214B2 publication Critical patent/JP4223214B2/ja
Priority to US12/469,734 priority patent/US7847598B2/en
Priority to US12/940,069 priority patent/US8149018B2/en
Priority to US13/367,397 priority patent/US8330498B2/en
Priority to US13/677,351 priority patent/US8581631B2/en
Priority to US14/048,099 priority patent/US8854084B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Amplifiers (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001366820A 2001-11-30 2001-11-30 半導体装置、画像表示装置、及び電子機器 Expired - Fee Related JP4223214B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2001366820A JP4223214B2 (ja) 2001-11-30 2001-11-30 半導体装置、画像表示装置、及び電子機器
US10/305,017 US6768348B2 (en) 2001-11-30 2002-11-27 Sense amplifier and electronic apparatus using the same
TW091134643A TWI280734B (en) 2001-11-30 2002-11-28 Sense amplifier and electronic apparatus using the same
CNB021547157A CN100474435C (zh) 2001-11-30 2002-11-29 读出放大器及使用该读出放大器的电子装置
KR1020020075687A KR100946943B1 (ko) 2001-11-30 2002-11-30 센스 증폭기 및 이를 사용한 전자 장치
US10/899,048 US7091750B2 (en) 2001-11-30 2004-07-27 Sense amplifier and electronic apparatus using the same
US11/458,710 US7564271B2 (en) 2001-11-30 2006-07-20 Sense amplifier and electronic apparatus using the same
US12/469,734 US7847598B2 (en) 2001-11-30 2009-05-21 Sense amplifier and electronic apparatus using the same
US12/940,069 US8149018B2 (en) 2001-11-30 2010-11-05 Sense amplifier and electronic apparatus using the same
US13/367,397 US8330498B2 (en) 2001-11-30 2012-02-07 Sense amplifier and electronic apparatus using the same
US13/677,351 US8581631B2 (en) 2001-11-30 2012-11-15 Sense amplifier and electronic apparatus using the same
US14/048,099 US8854084B2 (en) 2001-11-30 2013-10-08 Sense amplifier and electronic apparatus using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001366820A JP4223214B2 (ja) 2001-11-30 2001-11-30 半導体装置、画像表示装置、及び電子機器

Publications (3)

Publication Number Publication Date
JP2003168782A JP2003168782A (ja) 2003-06-13
JP2003168782A5 JP2003168782A5 (enrdf_load_stackoverflow) 2005-07-14
JP4223214B2 true JP4223214B2 (ja) 2009-02-12

Family

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Family Applications (1)

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JP2001366820A Expired - Fee Related JP4223214B2 (ja) 2001-11-30 2001-11-30 半導体装置、画像表示装置、及び電子機器

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Country Link
JP (1) JP4223214B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10049751B2 (en) 2014-08-28 2018-08-14 Toshiba Memory Corporation Semiconductor memory device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100507793C (zh) * 2003-07-28 2009-07-01 统宝香港控股有限公司 电压转换装置
KR100834746B1 (ko) 2007-02-14 2008-06-05 삼성전자주식회사 센스 앰프를 포함하는 반도체 소자
US8014218B2 (en) * 2008-12-24 2011-09-06 International Business Machines Corporation Capacitively isolated mismatch compensated sense amplifier
JP6114796B1 (ja) * 2015-10-05 2017-04-12 力晶科技股▲ふん▼有限公司 不揮発性記憶装置のためのセンス回路及び不揮発性記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10049751B2 (en) 2014-08-28 2018-08-14 Toshiba Memory Corporation Semiconductor memory device

Also Published As

Publication number Publication date
JP2003168782A (ja) 2003-06-13

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