JP4197775B2 - 半導体位置検出器 - Google Patents

半導体位置検出器 Download PDF

Info

Publication number
JP4197775B2
JP4197775B2 JP25699198A JP25699198A JP4197775B2 JP 4197775 B2 JP4197775 B2 JP 4197775B2 JP 25699198 A JP25699198 A JP 25699198A JP 25699198 A JP25699198 A JP 25699198A JP 4197775 B2 JP4197775 B2 JP 4197775B2
Authority
JP
Japan
Prior art keywords
semiconductor
conductive layer
position detector
type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP25699198A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000091624A5 (enExample
JP2000091624A (ja
Inventor
辰夫 竹下
正之 榊原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP25699198A priority Critical patent/JP4197775B2/ja
Publication of JP2000091624A publication Critical patent/JP2000091624A/ja
Publication of JP2000091624A5 publication Critical patent/JP2000091624A5/ja
Application granted granted Critical
Publication of JP4197775B2 publication Critical patent/JP4197775B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP25699198A 1998-09-10 1998-09-10 半導体位置検出器 Expired - Fee Related JP4197775B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25699198A JP4197775B2 (ja) 1998-09-10 1998-09-10 半導体位置検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25699198A JP4197775B2 (ja) 1998-09-10 1998-09-10 半導体位置検出器

Publications (3)

Publication Number Publication Date
JP2000091624A JP2000091624A (ja) 2000-03-31
JP2000091624A5 JP2000091624A5 (enExample) 2005-10-13
JP4197775B2 true JP4197775B2 (ja) 2008-12-17

Family

ID=17300212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25699198A Expired - Fee Related JP4197775B2 (ja) 1998-09-10 1998-09-10 半導体位置検出器

Country Status (1)

Country Link
JP (1) JP4197775B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557032B2 (en) 2005-09-01 2009-07-07 Micron Technology, Inc. Silicided recessed silicon

Also Published As

Publication number Publication date
JP2000091624A (ja) 2000-03-31

Similar Documents

Publication Publication Date Title
JP5952362B2 (ja) フォトダイオードアレイ
EP3540788B1 (en) Light receiving device and method of manufacturing light receiving device
KR19990008434A (ko) 공면 ｘ-선 포토다이오드 조립체
US7148551B2 (en) Semiconductor energy detector
JP2020096157A (ja) 光検出装置
CN103515396A (zh) 光电二极管阵列
JP4522531B2 (ja) 半導体エネルギー検出素子
EP0002694B1 (en) Radiation detector
JP4571267B2 (ja) 放射線検出器
US6459109B2 (en) Semiconductor position sensor
KR970004850B1 (ko) 광위치검출 반도체장치
JP4197775B2 (ja) 半導体位置検出器
JP4083553B2 (ja) 光半導体装置
EP1295345B1 (en) Position sensitive photo detector
US4717946A (en) Thin line junction photodiode
RU2185689C2 (ru) Лавинный фотоприемник (варианты)
JP4180708B2 (ja) 半導体位置検出器
JP3681190B2 (ja) 高耐圧プレーナ型受光素子
JP2001015797A (ja) 光入射位置検出用半導体装置およびその製造方法
CN116960135A (zh) 直接型电子探测器
JPH0521353B2 (enExample)
JPH04211133A (ja) 半導体デバイス
Brown et al. Semiconductor radiation detector
CS262052B1 (cs) Polovodičový detektor ionizujícího záření
JPH11220160A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050601

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050601

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080701

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080829

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080924

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080930

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111010

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111010

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121010

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121010

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131010

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees