JP4195648B2 - Printing mask, printing method, and flip-chip IC manufacturing method - Google Patents

Description

  The present invention relates to a printing mask used for printing / applying a printing paste on an object to be printed, a printing method thereof, and a method of manufacturing a flip chip IC.

Conventional

  Conventionally, an IC is face-down bonded to the upper surface of a circuit board having a circuit pattern, that is, the IC is mounted on the circuit board with the integrated circuit formation surface of the IC facing the circuit board. It has been broken.

  An IC used for such face-down bonding is called a flip-chip type IC, and generally has a terminal connected to a circuit pattern on a circuit board via a conductive material such as solder.

  Such a conventional flip chip type IC has a structure in which solder bumps are selectively formed on a plurality of barrier metal layers made of nickel or the like deposited on one main surface of a semiconductor substrate provided with an integrated circuit. When such a flip chip IC is mounted on a circuit board, the flip chip IC is mounted so that the solder bump of the flip chip IC faces the corresponding circuit pattern on the circuit board. The barrier metal layer of the flip chip type IC is soldered to the circuit pattern on the circuit board by placing it on the circuit board and then heating and melting the solder bumps at a high temperature.

The flip chip type IC as described above is usually manufactured by the following method. That is,
(1) Prepare a semiconductor substrate 21 having a plurality of barrier metal layers 23 on the upper surface and a printing mask 26 having a plurality of openings 27 corresponding to the barrier metal layer 23 as shown in FIG.
(2) Next, the printing mask 26 is disposed on the semiconductor substrate 21 so that the opening 27 is located on the barrier metal layer 23.
(3) Subsequently, the solder paste 25 is supplied onto the printing mask 26, and the solder paste 25 is filled in the openings 27 by moving the squeegee in a predetermined direction while pressing the squeegee against the printing mask 26 (see FIG. 7),
(4) Next, the solder paste 25 filled in the opening 27 is printed and applied on the barrier metal layer 23 by separating the printing mask 26 from the semiconductor substrate 21.
(5) Finally, the solder paste 25 applied on the barrier metal layer 23 is heated to form spherical solder bumps on the barrier metal layer 23, and the semiconductor substrate 21 is processed into a predetermined shape to produce a flip chip type. IC is completed.

  By the way, with the miniaturization of the flip chip type IC and the high density of wiring, the miniaturization and high density of the barrier metal layer 23 are progressing, and the size of the opening 27 of the printing mask 26 is also reduced accordingly. .

  However, in the printing method as described above, when the solder paste 25 is filled in the opening 27 and the print mask 26 is separated from the semiconductor substrate 21, a part of the solder paste 25 remains attached to the inner wall of the opening 27. Sometimes. In such a case, there is a problem that all of the solder paste 25 filled in the opening 27 cannot be applied onto the barrier metal layer 23, and a part of the solder paste 25 is wasted. In addition, the size of solder bumps provided on the flip chip IC may vary individually.

  Further, when the solder paste 25 remains on the inner wall of the opening 27 and hardens, there is a problem that the operation becomes difficult when the printing mask 26 is cleaned.

In order to solve such problems, as introduced in Patent Document 1, the entire printing mask is heated by a heating device to reduce the viscosity of the solder paste, thereby facilitating the solder paste from the inner wall of the opening. In order to prevent the solder paste from remaining in the opening, it has been proposed.
JP-A-11-138746

  However, in the method as shown in Patent Document 1, since the entire printing mask is heated, the printing mask itself is expanded or distorted by heat, and when the printing mask is disposed on the semiconductor substrate, The positional relationship between the opening and the barrier metal layer is shifted. Therefore, the solder paste passing through the opening is applied to a position shifted from a desired location, and a part of the solder paste may come into contact with the adjacent wiring to cause a short circuit.

  The present invention has been devised in view of the above-mentioned problems, and the object thereof is to transfer a paste such as solder to a printed material satisfactorily and to prevent a short circuit of the printed wiring. An object of the present invention is to provide a printing mask and a printing method that are easy to clean, and a method for manufacturing a flip chip IC.

The printing mask of the present invention is a printing mask in which a plurality of mask bodies are arranged in a stacked manner and a plurality of openings penetrating both mask bodies are provided.
A heating element is provided in the opening, and electrode wiring electrically connected to the heating element is interposed between adjacent mask bodies.

  Further, the printing method of the present invention is characterized in that the above-described printing mask is disposed on the printing material, and the paste on the printing mask is applied to the printing material through the opening.

  Furthermore, the printing method of the present invention is characterized in that, in the above-described printing method, when the paste is applied, the printing mask is pressed against a substrate using a pressing unit.

  Furthermore, the printing method of the present invention is characterized in that, in the above-described printing method, the heating element in the opening generates heat while the paste is present in the opening.

  On the other hand, the flip chip type IC manufacturing method of the present invention includes a step of disposing the above-described printing mask on a semiconductor substrate having a barrier metal layer, and a paste on the printing mask on the barrier metal layer through the opening. And a step of printing and applying, and a step of heating the paste on the barrier metal layer to form bumps.

  The flip-chip type IC manufacturing method of the present invention is characterized in that, in the above-described flip-chip type IC manufacturing method, when the paste is applied, the printing mask is pressed against an object to be printed using pressing means. And

  Furthermore, the manufacturing method of the flip chip type IC of the present invention is the above-described manufacturing method of the flip chip type IC, wherein the paste is a solder paste and the heating element in the opening is present while the solder paste exists in the opening. Is characterized by heat generation.

  According to the present invention, since the heating element is provided in the opening provided in the printing mask, heating the paste with the heating element while the paste is filled in the opening reduces the viscosity of the paste, Can be easily separated from the opening. Accordingly, waste of the paste can be reduced and the productivity can be improved, and, for example, when the applied paste is baked to form a flip chip IC bump, variation in the size of the bump can be reduced. There is an advantage.

  In addition, since the paste can be reduced from remaining in the openings, the printing mask can be easily cleaned.

  Further, since the paste can be easily separated from the opening, even a paste having a high viscosity and a low thixotropy index can be used, and there is an advantage that the use range of the paste is greatly expanded.

  Further, according to the present invention, since the heating element for heating the paste is provided in the opening of the print mask, it is well prevented that the print mask is greatly expanded by heating, and distortion generated in the print mask is suppressed to be extremely small. The paste can be applied to the desired location. As a result, when the bumps of the flip chip type IC are formed, it is possible to prevent a short circuit between the wirings.

  Furthermore, according to the present invention, since the electrode wiring connected to the heating element is interposed between the adjacent mask bodies, the electrode wiring is covered with the mask body, and large unevenness is formed on the upper and lower surfaces of the printing mask. Can be satisfactorily prevented from forming. Therefore, when printing the paste, when the printing mask is pressed against the semiconductor substrate with a pressing means such as a squeegee, it can prevent the circuit wiring on the semiconductor substrate from being damaged by the printing mask, and it remains on the printing mask. The amount of paste to be reduced can be reduced.

  Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

DESCRIPTION OF PRINT MASK FIG. 1 is a plan view according to an embodiment of the print mask of the present invention, FIG. 2 is an enlarged plan view of the main part of the print mask of FIG. 1, and FIG. 3 is the XX ′ line of the print mask of FIG. The printing mask 6 shown in the figure is generally a plurality of (two in this embodiment) mask main bodies 8 arranged in a plate-like manner, and penetrates both mask main bodies 8. A plurality of openings 7 are provided, and a heating element 9 for heating the paste is provided in the openings 7, and an electrode wiring 10 connected to the heating element 9 is provided between adjacent mask bodies 8. ing.

  The pair of mask bodies 8 is formed in a rectangular shape by various materials such as a metal material, a resin material, or a combination of these materials. For example, the mask body 8 is insulative to a mesh in which a linear body is formed in a mesh shape. A plate coated with the above emulsion or a plate itself without a mesh is preferably used (in this embodiment, the mask body 8 is a plate). Examples of the metal material used for the mask body 8 include aluminum alloy, stainless steel, Ni alloy, and Cr alloy. Examples of the resin material include polyimide, polyester, epoxy, polycarbonate, polyethylene, polyethylene terephthalate (PET), and polypropylene. Preferably used.

Each mask body 8 is provided with a plurality of openings 7 and a heating element 9 provided in the opening 7, and the mask bodies 8 are attached so that the positions of the corresponding openings 7 are matched. Yes. Further, an electrode wiring 10 electrically connected to the heating element 9 in the opening 7, a protective film 12, and the like are attached to the opposing surface of each mask body 8, and the electrode wiring 10 is sandwiched between the pair of mask bodies 8. ing. Thus, the electrode wiring 10 is thus covered with the mask body 8, that a large unevenness on the upper and lower surfaces is formed of a printing mask 6 is effectively prevented.

  On the other hand, the plurality of openings 7 provided in the mask body 8 are linearly arranged at a density of, for example, 100 dpi (dot per inch) to 300 dpi, and the arrangement is set in one or a plurality of rows, and each of the openings is substantially circular. Various shapes such as a shape, an oval shape, a rectangular shape, and a parallelogram shape are formed (in this embodiment, a circular shape).

  This opening 7 is for allowing a conductive paste such as a solder paste or silver epoxy placed on the mask body 8 to pass therethrough during printing. It is provided so that it may penetrate. In the case where the mask body 8 is configured by coating an insulating emulsion on a mesh-like mesh, it is general that an area where no emulsion exists is an opening.

  When the mask body 8 provided with such openings 7 is, for example, a plate made of Ni alloy, it is manufactured using a conventionally well-known additive method. Specifically, first, a photosensitive resin is applied in the form of a sheet, and by adopting a conventionally well-known photolithography technique, the region other than the region where the opening 7 is to be formed is removed, and then the photosensitive resin is removed. A nickel layer is applied to the region by 8 μm to 50 μm by a conventionally known electroplating or electroless plating method, and finally, the remaining photosensitive resin is removed to manufacture the region together with the opening 7.

  When the mask body 8 is a plate made of polyimide resin, for example, a polyimide resin precursor is applied in a sheet form by a screen printing method or the like, and this is baked, and then a hole corresponding to the opening 7 is formed. It is manufactured by adopting a conventionally known laser processing method.

Of course, there are other manufacturing methods. However, if the mask body 8 is formed by the additive method, it is possible to cope with the case where the area of the opening 7 is a fine pattern of 10000 μm ² or less. In order to be able to form by a method, it is preferable to form the mask main body 8 with Ni alloy, Cr alloy or the like.

  The pair of mask main bodies 8 are attached by forming an opening 7, a heating element 9, an electrode wiring 10, a protective film 12, etc. on each mask main body 8, and then applying an adhesive on the protective film 12. It overlaps so that the corresponding openings 7 of each mask main body 8 may correspond planarly, and after that, it hardens | cures the adhesive agent 13, and, as a result, the whole thickness will be 10 micrometers-110 micrometers, for example.

  In the openings 7 of both mask bodies 8, a heating element 9 made of a resistive thin film is deposited concentrically along the inner wall.

  The heating element 9 is formed of a resistance thin film having a thickness of 0.01 μm to 1.0 μm made of an electric resistance material such as TaN, TaSiO, TiSiO, TaSiNO, and has a C shape in a plan view.

  When power is supplied from a pair of electrode wirings 10 connected to both ends of the heating element 9, the heating element 9 generates Joule heat and has a temperature sufficient to lower the viscosity of the paste filled in the opening 7 ( For example, when the paste is a solder paste, the temperature is 30 ° C. to 180 ° C.).

  Such a heating element 9 is formed by, for example, depositing a resistance thin film in the opening 7 by a conventionally known thin film forming technique, that is, a sputtering method or a vapor deposition method. It is formed by adopting and finely processing the resistive thin film into a predetermined pattern. Since the heating element 9 in the opening 7 is made of a resistance thin film, it is possible to suppress a decrease in the amount of paste that can be filled in the opening 7 due to the formation of the heating element 9.

  A pair of electrode wirings 10 made of a metal material such as aluminum or copper is connected to the heating element 9.

  The electrode wiring 10 functions as a power supply wiring that supplies power supplied from an external power source to the heating element 9 based on control of a drive circuit (not shown), and has one end through a region between adjacent mask bodies 8. It is connected to a power supply terminal of an external power supply (not shown).

  Since the electrode wiring 10 is interposed between the adjacent mask bodies 8 in this way, the electrode wiring 10 that tends to cause unevenness is not exposed from the mask body 8, and large unevenness is formed on the upper and lower surfaces of the printing mask 6. Can be satisfactorily prevented from forming. As a result, when the paste 5 ′ is printed, it is possible to satisfactorily prevent the circuit wiring on the semiconductor substrate from being damaged by the print mask 6 and to reduce the amount of the paste 5 ′ remaining on the print mask 6.

  Such an electrode wiring 10 is formed by a conventionally well-known thin film forming technique similar to that of the heating element 9.

In the present embodiment, an inorganic material such as SiO ₂ , SiON, Si ₃ N ₄ , polyimide, or the like, between the heating element 9 and the inner wall of the opening 7, and between the electrode wiring 10 and the mask body 8, is used. By interposing an insulating film 11 made of an organic material such as epoxy, electrical insulation between the mask main body 8 and the heating element 9 or between the mask main body 8 and the electrode wiring 10 is achieved. It can be formed by a well-known thin film forming technique. Further, when the mask body 8 is made of an insulating material, the insulating film 11 is not always necessary.

A protective film 12 made of an inorganic material such as SiO ₂ , SiON, or Si ₃ N ₄ , or an organic material such as polyimide or epoxy is deposited on the heating element 9 and the electrode wiring 10. The heating element 9 and the electrode wiring 10 are covered with 12.

  The protective film 12 is for preventing corrosion of the heating element 9 and the electrode wiring 10, and for preventing wear and disconnection due to friction with the paste and the substrate, and has a thickness of 0.1 μm to 5 μm. Set to If the thickness of the protective film 12 is large, the heat of the heating element 9 becomes difficult to be transferred to the paste in the opening 7 and the required power increases, so the thickness of the protective film 12 in the opening 7 is set to 1 μm or less. It is preferable.

  Further, it is preferable to set the surface roughness of the protective film 12 in the opening 7 to be small in order to make the paste filled in the opening 7 good. Specifically, the arithmetic average roughness Ra is 1. It is preferable to set it to 0 μm or less.

Here, when the surface roughness of the protective film 12 is larger than 1.0 μm in terms of arithmetic average roughness Ra, it is not possible to improve the paste release property so much, and the area of the opening 7 is extremely small, for example, 10,000 μm ² or less. In this case, in order to remove the residual paste in the opening 7, the heating temperature of the heating element 9 needs to be higher than usual. The lower limit of the surface roughness of the protective film 12 is preferably 0.05 μm in terms of arithmetic average roughness Ra from the viewpoint of maintaining high productivity of the printing mask 6.

  The protective film 12 is formed in a predetermined pattern by a conventionally known thin film forming technique, for example, a sputtering method or a vapor deposition method, or by combining a photolithography technique and an etching technique in addition to these methods.

Description of Flip Chip IC Next, the flip chip IC in which bumps are formed using the above-described printing mask 6 will be described in detail with reference to the drawings.

  FIG. 4 is a cross-sectional view of a flip chip type IC manufactured by the manufacturing method of the present invention. The flip chip type IC shown in FIG. 4 is roughly formed on a semiconductor substrate 1 with circuit wiring 2, barrier metal layer 3, and passivation. The layer 4, the bump 5, etc. are provided.

  The semiconductor substrate 1 is made of a semiconductor material such as single crystal silicon, and a semiconductor element (not shown), a circuit wiring 2, a barrier metal layer 3, a passivation layer 4 and the like are deposited on the upper surface of the semiconductor substrate 1, and a supporting mother for supporting these. Functions as a material.

  Such a semiconductor substrate 1 is obtained by, for example, slicing a single crystal silicon ingot formed by a conventionally known chocolate ski method (pull-up method) or the like to a predetermined thickness, and polishing the surface thereof. Thereafter, an insulating film is formed on the entire surface of the plate body by a conventionally known thermal oxidation method.

  The circuit wiring 2 formed on the semiconductor substrate 1 is deposited to a thickness of 0.5 μm to 1.5 μm with a metal material such as aluminum (Al) or copper (Cu), and is externally connected to a semiconductor element (not shown). It functions as a power supply wiring for supplying power supply power, electrical signals, and the like from

  A plurality of barrier metal layers 3 are formed on a part of the upper surface of the circuit wiring 2 so as to be arranged linearly along the edge of the semiconductor substrate 1.

  The barrier metal layer 3 is effective in eroding aluminum or the like that forms the circuit wiring 2 with the melting of the bump 5 provided on the barrier metal layer 3 when the flip chip type IC is mounted on the circuit board. For example, zinc (Zn), nickel (Ni) and gold (Au) are formed from the semiconductor substrate 1 side so that the wettability with respect to the material constituting the bump 5 is good. Sequentially stacked three-layer structure, zinc (Zn), nickel (Ni) two-layer structure, or palladium (Pd), nickel (Ni), gold (Au) three-layer structure, palladium (Pd), nickel ( A structure such as a two-layer structure of Ni) is conceivable.

  The circuit wiring 2 is formed in a predetermined pattern on the upper surface of the semiconductor substrate 1 by employing conventionally known sputtering, photolithography technology, and etching technology. When the barrier metal layer 3 has a three-layer structure of zinc (Zn), nickel (Ni), and gold (Au), for example, after forming a passivation layer 4 to be described later, circuit wiring exposed from the passivation layer 4 By adopting a conventionally well-known electroless plating method or the like on a partial upper surface of 2, zinc (Zn), nickel (Ni), and gold (Au) are sequentially laminated from the semiconductor substrate side to form a cylindrical shape. It is formed.

On the other hand, in a region where the barrier metal layer 3 is not formed, a passivation layer 4 made of an electrically insulating material such as silicon nitride (Si ₃ N ₄ ), silicon oxide (SiO ₂ ), or polyimide is provided with circuit wiring 2 or a semiconductor element (not shown). It is applied to cover.

  The passivation layer 4 effectively prevents the semiconductor element and the circuit wiring 2 from being corroded by contact with moisture contained in the atmosphere by blocking the semiconductor element and the circuit wiring 2 from the atmosphere. It is preferable that a part thereof covers the outer peripheral upper surface of the barrier metal layer 3.

  The passivation layer 4 is formed to a thickness of 0.5 μm to 3.0 μm on the upper surface of the semiconductor substrate 1 by employing a conventionally known sputtering, photolithography technique, etching technique or the like.

  A spherical bump 5 is formed on the upper surface of the barrier metal layer 3 described above.

  The bump 5 is melted by being heated when the flip chip IC is mounted on the circuit board, so that the barrier metal layer 3 of the flip chip IC and the circuit pattern on the circuit board are electrically and mechanically connected. For connection, for example, solder obtained by melting and solidifying tin (Sn), silver (Ag), and copper (Cu) at a ratio of 96.5: 3.0: 0.5, silver epoxy, etc. Formed of a conductive material.

Description of Flip Chip IC Manufacturing Method Next, a method of manufacturing the above-described flip chip IC using the above-described printing mask 6 will be described with reference to FIG. FIG. 5 is a cross-sectional view in each step for explaining a method of manufacturing a flip chip type IC using the printing mask of FIG.

  (1) First, a semiconductor substrate 1 having a circuit wiring 2, a barrier metal layer 3, and a passivation layer 4 deposited on the upper surface, a printing mask 6, and a paste 5 ′ are prepared.

  As the paste 5 ', a solder paste in which a flux or the like is added to and mixed with a large number of solder particles to have a predetermined viscosity, or a conductive paste having a temperature range in which the viscosity is lowered by heating, such as silver epoxy, is suitably used. .

  (2) Next, the printing mask 6 is disposed on the semiconductor substrate 1.

  At this time, the printing mask 6 is disposed so that the opening 7 is located immediately above the corresponding barrier metal layer 3 on the semiconductor substrate 1.

  (3) Subsequently, the paste 5 ′ is supplied onto the printing mask 6, and the pressing means is moved in a state where the pressing means such as a squeegee (squeegee in the present embodiment) is pressed against the printing mask 6, The paste 5 ′ is filled in the opening 7, the print mask 6 is separated from the semiconductor substrate 1, and the paste 5 ′ in the opening 7 is printed and applied on the barrier metal layer 3.

  As described above, since the electrode wiring 10 is sandwiched between the pair of mask bodies 8 as described above, the electrode mask 10 is not exposed from the upper and lower surfaces of the printing mask 6. It is well prevented that large irregularities are formed on the upper and lower surfaces. Therefore, when the printing mask 6 is pressed against the semiconductor substrate 1 with a pressing means such as a squeegee, the circuit wiring 2 on the semiconductor substrate 1 can be satisfactorily prevented from being damaged by the printing mask 6. The amount of paste 5 ′ remaining in the recess can be reduced.

  Also, when printing the paste 5 ′, it is important to cause the heating element 9 to generate heat while the paste 5 ′ is filled in the opening 7. By controlling the heat generation of the heating element 9, the opening 7 is thus controlled. The viscosity of the inner paste 5 ′ decreases, the frictional force between the paste 5 ′ and the print mask 6 (opening 7) decreases, and the paste 5 ′ can be easily separated from the inside of the opening 7. Accordingly, there is an advantage that the waste of the paste 5 ′ can be reduced and the productivity can be improved, and the variation in the size of the bump formed on the barrier metal layer 3 can be reduced.

  Moreover, since it is possible to reduce the residue of the paste 5 ′ in the opening 7, the work of removing the lump of the paste 5 ′ remaining in the opening 7 when cleaning the printing mask 6 is greatly reduced. There is also an advantage that the cleaning operation of the printing mask 6 becomes easy.

  Further, since the paste 5 'can be easily separated from the opening, even a paste having a high viscosity and a low thixotropy index can be used, and there is an advantage that the range of use of the paste 5' is greatly expanded.

  Further, since the heating element 9 for heating the paste 5 ′ is provided in the opening 7 of the printing mask 6, it becomes difficult for heat of the heating element 9 to be transmitted to an unnecessary region, that is, a region other than the opening 7. It is well prevented that the entire printing mask 6 is greatly expanded due to heat generation, and the distortion generated in the printing mask 6 is extremely small. Therefore, the paste 5 ′ can be applied to a desired location, and the deviation of the formation location of the bump 5 formed on the barrier metal layer 3 can be reduced.

  In addition, it is preferable that the heating time of the heating element 9 is as short as possible in order to suppress expansion of the print mask 6 due to the heat of the heating element 9 in the region near the opening 7. Specifically, the heat generation of the heating element 9 starts when the paste 5 'is filled in the opening 7, immediately before, immediately after (after the time when the paste 5' is filled in the opening 7, about 5 to 100 msec). It is preferable to set to. The end of heat generation of the heating element 9 may be set when the paste 5 'is separated from the opening 7 or immediately before or immediately after (after the time when the paste 5' is separated from the opening 7 from around 5 msec to 100 msec). preferable.

  The heating element 9 preferably continues to generate heat while the paste 5 'is filled in the opening 7, but it is sufficient that the heating element 9 generates heat at least once during the filling of the paste 5'.

  It is important to set the heat generation temperature of the heating element 9 within a temperature range in which the viscosity of the paste 5 ′ decreases. For example, the paste 5 ′ contains, for example, tin (Sn), silver (Ag), and copper (Cu). In the case of a solder paste mixed at a ratio of 96.5: 3.0: 0.5, if the heating temperature of the heating element 9 is higher than 180 ° C., the solvent in the solder paste evaporates and the solder paste becomes hard. Therefore, it is preferable that the heat generation temperature of the heating element 9 is 80 ° C to 180 ° C. Further, when the paste 5 ′ is made of silver epoxy, if the heat generation temperature of the heating element 9 is higher than 80 ° C., the silver epoxy may be hardened. Therefore, the heat generation temperature of the heating element 9 is 80 ° C. or less, preferably 30 ° C. It is preferable to make it -80 degreeC.

  (4) Then, the paste 5 'applied on the barrier metal layer 3 is dried and finally melted to heat and melt the particles in the paste 5' to bond the particles to each other. By cooling this, spherical bumps 5 having substantially uniform sizes are formed on the barrier metal layer 3.

  In addition, this invention is not limited to the above-mentioned embodiment, A various change and improvement are possible in the range which does not deviate from the summary of this invention.

  For example, in the above-described embodiment, the heating element 9 provided in the opening 7 and the electrode wiring 10 connected thereto are provided in both mask bodies 8, but the heating element 9 and the electrode wiring 10 are provided in at least one mask. What is necessary is just to make it provide in the main body 8.

  In the above-described embodiment, the heating element 9 is formed along the inner wall of the opening 7. However, the heating element 9 does not necessarily exist along the inner wall, and the heating element 9 does not necessarily exist on the inner wall of the opening 7. There may be a plurality of heating elements.

Further, in the above-described embodiment, the protective film 12 is formed of SiO ₂ , SiON, Si ₃ N ₄ , polyimide, or epoxy, but instead, the protective film is made of other insulating sealing such as fluorine. You may make it form with material.

It is a top view of the printing mask concerning one Embodiment of this invention. It is a principal part enlarged plan view of the printing mask of FIG. FIG. 2 is a cross-sectional view taken along line X-X ′ of the printing mask of FIG. 1. It is sectional drawing of the flip chip type IC manufactured by the manufacturing method of the flip chip type IC concerning one Embodiment of this invention. It is sectional drawing in each process for demonstrating the manufacturing method of the flip chip type IC using the printing mask of FIG. It is a top view of the conventional printing mask. It is sectional drawing in each process for demonstrating the method of forming a solder bump using the printing mask of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate 2 ... Circuit wiring 3 ... Barrier metal layer 4 ... Passivation layer 5 ... Bump 5 '... Paste 6 ... Print mask 7 ... Opening 8 ... -Mask body 9 ... Heating element 10 ... Electrode wiring 11 ... Insulating film 12 ... Protective film

Claims (7)

In a printing mask in which a pair of mask bodies are arranged to overlap and a plurality of openings penetrating the pair of mask bodies are provided,
A printing mask characterized in that a heating element is provided in the opening, and electrode wiring electrically connected to the heating element is interposed between the pair of adjacent mask bodies. A printing method comprising: arranging a printing mask according to claim 1 on a substrate; and applying a paste on the printing mask to the substrate through the opening. 3. The printing method according to claim 2, wherein, when applying the paste, the printing mask is pressed against a substrate using a pressing unit. 4. The printing method according to claim 2, wherein the heating element in the opening generates heat while the paste is present in the opening. 5. A step of disposing the printing mask according to claim 1 on a semiconductor substrate having a barrier metal layer, a step of printing and applying a paste on the printing mask onto the barrier metal layer through an opening, and a barrier metal layer And a step of forming bumps by heating the paste above. A method of manufacturing a flip chip type IC, comprising: 6. The method of manufacturing a flip chip type IC according to claim 5, wherein when the paste is applied, the printing mask is pressed against a substrate using a pressing unit. 7. The manufacturing method of a flip chip type IC according to claim 5, wherein the paste is a solder paste, and the heating element in the opening generates heat while the solder paste is present in the opening. Method.

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