JP4185006B2 - 有機電界発光表示装置及びその製造方法 - Google Patents
有機電界発光表示装置及びその製造方法 Download PDFInfo
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- JP4185006B2 JP4185006B2 JP2004083387A JP2004083387A JP4185006B2 JP 4185006 B2 JP4185006 B2 JP 4185006B2 JP 2004083387 A JP2004083387 A JP 2004083387A JP 2004083387 A JP2004083387 A JP 2004083387A JP 4185006 B2 JP4185006 B2 JP 4185006B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 102
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 79
- 239000010410 layer Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 40
- 239000000377 silicon dioxide Substances 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 27
- 238000010521 absorption reaction Methods 0.000 claims description 21
- 239000003566 sealing material Substances 0.000 claims description 19
- 238000005401 electroluminescence Methods 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 229920003023 plastic Polymers 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000012044 organic layer Substances 0.000 claims description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000565 sealant Substances 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 2
- 230000008569 process Effects 0.000 description 24
- 239000010408 film Substances 0.000 description 16
- 238000007789 sealing Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052936 alkali metal sulfate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000003230 hygroscopic agent Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Description
11…背面基板、
12…有機電界発光部、
13…前面基板、
14…水分吸収層、
15…密封材、
16…内部空間。
Claims (18)
- 背面基板と、
前記背面基板の一面に形成され、第1電極、有機層、透明電極よりなる第2電極の順に積層されてなる有機電界発光部と、
前記有機電界発光部を外部と遮断するために前記背面基板と結合して前記有機電界発光部が収容された内部空間を密封するものであって、内面に多孔性シリカ層が設けられた透明な前面基板と、を具備し、
前記多孔性シリカ層が、直径2nm〜30nmの吸湿孔を有する有機電界発光表示装置。 - 前記多孔性シリカ層は複数の吸湿孔を有することを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記多孔性シリカ層は100nm〜50μmの厚さを有することを特徴とする請求項1または2に記載の有機電界発光表示装置。
- 前記第2電極の上面には無機物よりなる保護膜がさらに形成されたことを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記保護膜は金属酸化物または金属窒化物であることを特徴とする請求項4に記載の有機電界発光表示装置。
- 前記前面基板と前記背面基板とによって区画される内部空間は真空であることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記前面基板と前記背面基板とによって区画される内部空間は不活性気体で充填されることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記前面基板はガラス基板または透明なプラスチック基板であることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記前面基板はプラスチック基板であり、当該プラスチック基板の内面は水分から保護するための保護膜が形成されていることを特徴とする請求項1または2に記載の有機電界発光表示装置。
- 前記多孔性シリカ層は、前記多孔性シリカ層の構造を維持するシリカフレームと、水分を吸収する吸湿孔とを有すること特徴とする請求項1に記載の有機電界発光表示装置。
- 一面上に、第1電極、有機層、及び透明電極よりなる第2電極の順に積層されてなる有機電界発光部が形成された背面基板とを準備する第1段階と、
高分子物質からなる界面活性剤とソルベントからなる第1混合物と、テトラエチルオルトシリケートとソルベントとHClからなる第2混合物とを準備し、当該第1混合物及び当該第2混合物を混合した第3混合物を透明な前面基板の内面に塗布し、その後焼成して高分子を燃やして、直径2nm〜30nmの吸湿孔を有する多孔性シリカを形成する第2段階と、
前記背面基板と前記前面基板の少なくとも一側で前記有機電界発光部の外側に該当する部分に密封材を塗布する第3段階と、
前記背面基板と前記前面基板とを、前記有機電界発光部及び前記多孔性シリカが内側に位置するように前記密封材を介して結合する第4段階と、を具備する有機電界発光表示装置の製造方法。 - 前記密封材を硬化する段階をさらに具備することを特徴とする請求項11に記載の有機電界発光素子の製造方法。
- 前記有機電界発光表示装置の内部空間を真空とするか不活性気体を詰める段階をさらに具備することを特徴とする請求項11に記載の有機電界発光表示装置の製造方法。
- 前記密封材を硬化する段階をさらに具備することを特徴とする請求項13に記載の有機電界発光素子の製造方法。
- 一面上に、第1電極、有機層、及び透明電極よりなる第2電極の順に積層されてなる有機電界発光部が複数形成された背面基板原板を準備する第1段階と、
高分子物質からなる界面活性剤とソルベントからなる第1混合物と、テトラエチルオルトシリケートとソルベントとHClからなる第2混合物とを準備し、当該第1混合物及び当該第2混合物を混合した第3混合物を透明な前面基板原板の内面に塗布し、その後焼成して高分子を燃やして、直径2nm〜30nmの吸湿孔を有する多孔性シリカを形成する第2段階と、
前記背面基板原板または前記前面基板原板の少なくとも一側で複数の有機電界発光部の外側に密封材を塗布する第3段階と、
前記背面基板原板と前面基板原板とを、前記有機電界発光部及び前記多孔性シリカが内側に位置するように前記密封材を介して結合して複数の有機電界発光表示装置が形成されたパネルを形成する第4段階と、
前記パネルを個々の有機電界発光表示装置に切断する第5段階と、を具備する有機電界発光表示装置の製造方法。 - 前記密封材を硬化する段階をさらに具備することを特徴とする請求項15に記載の有機電界発光素子の製造方法。
- 前記有機電界発光表示装置の内部空間を真空とするか不活性気体を詰める段階をさらに具備することを特徴とする請求項15に記載の有機電界発光表示装置の製造方法。
- 前記密封材を硬化する段階をさらに具備することを特徴とする請求項17に記載の有機電界発光素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2003-0023219A KR100496286B1 (ko) | 2003-04-12 | 2003-04-12 | 유기 전계 발광 표시 장치 및 이의 제조 방법 |
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JP2004319450A JP2004319450A (ja) | 2004-11-11 |
JP4185006B2 true JP4185006B2 (ja) | 2008-11-19 |
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JP2004083387A Expired - Lifetime JP4185006B2 (ja) | 2003-04-12 | 2004-03-22 | 有機電界発光表示装置及びその製造方法 |
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Country | Link |
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US (5) | US20040201347A1 (ja) |
JP (1) | JP4185006B2 (ja) |
KR (1) | KR100496286B1 (ja) |
CN (1) | CN1536938B (ja) |
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KR100544131B1 (ko) * | 2003-09-03 | 2006-01-23 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그 제조방법 |
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CN110289367B (zh) * | 2019-06-24 | 2021-11-02 | 京东方科技集团股份有限公司 | 封装膜层、显示面板及制作方法 |
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2004
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US8652566B2 (en) | 2014-02-18 |
US9711757B2 (en) | 2017-07-18 |
US20140134772A1 (en) | 2014-05-15 |
US20040201347A1 (en) | 2004-10-14 |
US20080064286A1 (en) | 2008-03-13 |
JP2004319450A (ja) | 2004-11-11 |
US20160172627A1 (en) | 2016-06-16 |
CN1536938A (zh) | 2004-10-13 |
US10135030B2 (en) | 2018-11-20 |
US20170309865A1 (en) | 2017-10-26 |
CN1536938B (zh) | 2010-10-06 |
KR100496286B1 (ko) | 2005-06-17 |
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