JP4183688B2 - 光電変換装置の製造方法および光電変換装置 - Google Patents
光電変換装置の製造方法および光電変換装置 Download PDFInfo
- Publication number
- JP4183688B2 JP4183688B2 JP2005031130A JP2005031130A JP4183688B2 JP 4183688 B2 JP4183688 B2 JP 4183688B2 JP 2005031130 A JP2005031130 A JP 2005031130A JP 2005031130 A JP2005031130 A JP 2005031130A JP 4183688 B2 JP4183688 B2 JP 4183688B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoelectric conversion
- electrode
- manufacturing
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- 238000000034 method Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 62
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 44
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 31
- 238000010248 power generation Methods 0.000 claims description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 18
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 7
- 239000010408 film Substances 0.000 description 122
- 239000007789 gas Substances 0.000 description 41
- 239000011521 glass Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005031130A JP4183688B2 (ja) | 2005-02-07 | 2005-02-07 | 光電変換装置の製造方法および光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005031130A JP4183688B2 (ja) | 2005-02-07 | 2005-02-07 | 光電変換装置の製造方法および光電変換装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006216921A JP2006216921A (ja) | 2006-08-17 |
| JP2006216921A5 JP2006216921A5 (https=) | 2008-03-27 |
| JP4183688B2 true JP4183688B2 (ja) | 2008-11-19 |
Family
ID=36979846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005031130A Expired - Fee Related JP4183688B2 (ja) | 2005-02-07 | 2005-02-07 | 光電変換装置の製造方法および光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4183688B2 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5473187B2 (ja) | 2006-09-04 | 2014-04-16 | 三菱重工業株式会社 | 製膜条件設定方法、光電変換装置の製造方法及び検査方法 |
| EP2133924A4 (en) * | 2007-02-16 | 2011-04-27 | Mitsubishi Heavy Ind Ltd | PHOTOELECTRIC CONVERTER AND MANUFACTURING METHOD THEREFOR |
| JP2008047938A (ja) | 2007-10-17 | 2008-02-28 | Masayoshi Murata | 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。 |
| JP2009152441A (ja) | 2007-12-21 | 2009-07-09 | Mitsubishi Heavy Ind Ltd | 光電変換装置の製造方法及び光電変換装置 |
| JP2010114299A (ja) | 2008-11-07 | 2010-05-20 | Mitsubishi Heavy Ind Ltd | 光電変換装置の製造方法及び光電変換装置 |
| JP2010135636A (ja) * | 2008-12-05 | 2010-06-17 | Mitsubishi Heavy Ind Ltd | 光電変換装置 |
| EP2434156A1 (en) | 2009-05-20 | 2012-03-28 | Mitsubishi Heavy Industries, Ltd. | Dry vacuum pump |
| EP2352180A1 (en) * | 2009-07-13 | 2011-08-03 | Sanyo Electric Co., Ltd. | Thin film solar cell and method for manufacturing same |
-
2005
- 2005-02-07 JP JP2005031130A patent/JP4183688B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006216921A (ja) | 2006-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105762234B (zh) | 一种隧穿氧化层钝化接触太阳能电池及其制备方法 | |
| JP3364180B2 (ja) | 非晶質シリコン太陽電池 | |
| CN103915523B (zh) | 一种含复合发射层硅异质结太阳电池的制备方法 | |
| US20080245414A1 (en) | Methods for forming a photovoltaic device with low contact resistance | |
| JP4940290B2 (ja) | 光電変換装置及びその製造方法 | |
| JP2012523715A (ja) | 太陽電池用の微結晶シリコン層を形成するパルスプラズマ堆積 | |
| JP2009152265A (ja) | 光電変換素子製造装置及び方法、並びに光電変換素子 | |
| JPWO2007040183A1 (ja) | シリコン系薄膜光電変換装置、その製造方法およびその製造装置 | |
| JP4183688B2 (ja) | 光電変換装置の製造方法および光電変換装置 | |
| CN101845620B (zh) | 脉冲加热多匣式化学气相沉积p-i-n镀膜装置 | |
| WO2010023991A1 (ja) | 光電変換装置の製造方法、光電変換装置、及び光電変換装置の製造システム | |
| JP2007281018A (ja) | 光電変換装置及びその製造方法 | |
| CN101939844B (zh) | 太阳能电池元件的制造方法及太阳能电池元件 | |
| JPWO2011114551A1 (ja) | 太陽電池及びその製造方法 | |
| JP3697199B2 (ja) | 太陽電池の製造方法および太陽電池 | |
| JPWO2013168515A1 (ja) | 光電変換装置およびその製造方法 | |
| JP2003158078A (ja) | シリコン半導体の形成方法 | |
| JP2006216624A (ja) | 太陽電池及び太陽電池の製造方法 | |
| JP3272681B2 (ja) | 太陽電池の製造方法 | |
| JP5373045B2 (ja) | 光電変換装置 | |
| JP2013529374A (ja) | 光起電力アプリケーションにおける微結晶材料を蒸着するための方法および装置 | |
| JP2004253417A (ja) | 薄膜太陽電池の製造方法 | |
| CN103222071A (zh) | 用于a-Si单结和多结薄膜硅太阳能电池的改善的a-Si：H吸收器层 | |
| JP2007180364A (ja) | 光電変換素子及びその製造方法並びに薄膜形成装置 | |
| JP2009057636A (ja) | シリコン膜の製造方法及び太陽電池の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071213 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080213 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20080213 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20080226 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080303 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080416 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080521 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20080626 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080718 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080819 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080902 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110912 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110912 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110912 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120912 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120912 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130912 Year of fee payment: 5 |
|
| LAPS | Cancellation because of no payment of annual fees |