JP4178007B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4178007B2
JP4178007B2 JP2002223234A JP2002223234A JP4178007B2 JP 4178007 B2 JP4178007 B2 JP 4178007B2 JP 2002223234 A JP2002223234 A JP 2002223234A JP 2002223234 A JP2002223234 A JP 2002223234A JP 4178007 B2 JP4178007 B2 JP 4178007B2
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JP
Japan
Prior art keywords
group
general formula
alkyl group
hydrogen atom
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002223234A
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English (en)
Japanese (ja)
Other versions
JP2004062045A (ja
JP2004062045A5 (enExample
Inventor
一良 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002223234A priority Critical patent/JP4178007B2/ja
Priority to KR1020030026279A priority patent/KR100955006B1/ko
Priority to US10/422,789 priority patent/US7198880B2/en
Publication of JP2004062045A publication Critical patent/JP2004062045A/ja
Publication of JP2004062045A5 publication Critical patent/JP2004062045A5/ja
Application granted granted Critical
Publication of JP4178007B2 publication Critical patent/JP4178007B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2002223234A 2002-04-26 2002-07-31 ポジ型レジスト組成物 Expired - Fee Related JP4178007B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002223234A JP4178007B2 (ja) 2002-07-31 2002-07-31 ポジ型レジスト組成物
KR1020030026279A KR100955006B1 (ko) 2002-04-26 2003-04-25 포지티브 레지스트 조성물
US10/422,789 US7198880B2 (en) 2002-04-26 2003-04-25 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002223234A JP4178007B2 (ja) 2002-07-31 2002-07-31 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004062045A JP2004062045A (ja) 2004-02-26
JP2004062045A5 JP2004062045A5 (enExample) 2005-09-22
JP4178007B2 true JP4178007B2 (ja) 2008-11-12

Family

ID=31943045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002223234A Expired - Fee Related JP4178007B2 (ja) 2002-04-26 2002-07-31 ポジ型レジスト組成物

Country Status (1)

Country Link
JP (1) JP4178007B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7537879B2 (en) * 2004-11-22 2009-05-26 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
KR20150101074A (ko) * 2014-02-26 2015-09-03 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 패턴 형성 방법 및 반도체 소자의 제조 방법

Also Published As

Publication number Publication date
JP2004062045A (ja) 2004-02-26

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