JP4156154B2 - Solid-state imaging device - Google Patents

Solid-state imaging device Download PDF

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JP4156154B2
JP4156154B2 JP33554799A JP33554799A JP4156154B2 JP 4156154 B2 JP4156154 B2 JP 4156154B2 JP 33554799 A JP33554799 A JP 33554799A JP 33554799 A JP33554799 A JP 33554799A JP 4156154 B2 JP4156154 B2 JP 4156154B2
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solid
state imaging
imaging device
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state
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JP2001156278A (en
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隆二 近藤
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Fujifilm Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、ＣＣＤ（Charge-Coupled Device ）等の固体撮像素子をプラスチック又はセラミックス等の容器（パッケージ）内に収納して形成された固体撮像装置に関する。
【０００２】
【従来の技術】
図１０は従来の固体撮像装置を示す上面図、図１１（ａ）は図１０のＤ−Ｄ線による断面図、図１１（ｂ）は図１０のＥ−Ｅ線による断面図である。
固体撮像素子３１はシリコン半導体により形成されており、その一方の面には複数の受光部がマトリクス状に配置されている。以下、固体撮像素子３１の受光部が配置されている部分を受光エリアという。
【０００３】
固体撮像素子３１の厚さは、一般的に約２５０μｍ程度である。この固体撮像素子３１は、プラスチック又はセラミックス等により形成されたパッケージ３２の凹部３３内に収納されている。パッケージ３２の上部には透明カバーガラス３４が取り付けられており、パッケージ３２の内部空間の気密性が確保されるようになっている。但し、光は、カバーガラス３４を通して固体撮像素子３１の受光エリアに到達することができる。
【０００４】
パッケージ３２の下側には複数本の金属製リード３５が突き出しており、パッケージ３２の内側にはこれらのリード３５とそれぞれ電気的に接続された電極３６が形成されている。固体撮像素子３１は、これらの電極３６とボンディングワイヤ３７により電気的に接続されている。
図１２は、上記の固体撮像装置を使用したデジタルカメラの模式図である。映像は、撮像レンズ４１及び絞り４５を介して固体撮像素子３１の受光エリアに投影されて電気信号に変換される。この場合、受光エリアの中央部と縁部とでは撮像レンズ４１までの距離が異なるため、映像の歪みが生じる。これを収差という。従来、デジタルカメラに使用される固体撮像素子では、収差の影響を小さくするために、マイクロレンズの位置をずらす、いわゆるレンズずらしといわれる手法が採られる。
【０００５】
図１３はレンズずらしを説明する模式図である。この図１３に示すように、固体撮像素子の受光エリアには、各受光部４３に対応してそれぞれマイクロレンズ４２といわれる微小なレンズが形成されている。固体撮像素子の中央部では受光部４３のすぐ上にマイクロレンズ４２を配置するが、縁部ではマイクロレンズ４２の中心を受光部４３の中心からずらすことにより、収差の影響を少なくしている。
【０００６】
【発明が解決しようとする課題】
しかしながら、上記のレンズずらしによる収差低減方法は、以下に示す問題点がある。
（１）撮像レンズに応じてマイクロレンズのずれ量を調整する必要がある。このため、マイクロレンズ形成用フォトマスクの種類が多くなり、製造コスト上昇の原因となる。
【０００７】
（２）撮像レンズを変更するたびに固体撮像素子を作り直す必要がある。
（３）レンズずらしによる撮像レンズ収差の補正は不完全である。
本発明は、かかる従来技術の問題点に鑑みてなされたものであり、レンズずらしによらず簡単に収差を補正することができ、製造コストを低減することができる固体撮像装置を提供することを目的とする。
【０００８】
【課題を解決するための手段】
上記した課題は、円筒状又は球面状の曲面を有する凹部が設けられたパッケージと、湾曲した状態で前記パッケージ内に収納された固体撮像素子とを有し、前記パッケージには、前記凹部の部分に前記固体撮像素子を吸着するための孔が設けられていることを特徴とする固体撮像装置により解決する。
本発明においては、固体撮像素子が円筒状又は球面状に湾曲した状態でパッケージ内に収納されている。このため、固体撮像素子の各受光部から撮像レンズまでの距離が均一化され、収差を低減することができる。また、各受光部の中心軸が撮像レンズの方向に傾くため、レンズずらしの手法を採る必要がない。このため、マイクロレンズ形成用フォトマスクの設計が容易であり、製造コストを低減することができる。
【０００９】
固体撮像素子を円筒状又は球面状に湾曲させるためには、例えばパッケージに円筒状又は球面状の底面を有する凹部を設け、その凹部の底面に沿って固体撮像素子を湾曲させればよい。また、パッケージの凹部の縁部に段差部（小さな突起）を設けその段差部に固体撮像素子の縁部を接合して、固体撮像素子を湾曲させるようにしてもよい。固体撮像素子を湾曲させるためには、固体撮像素子を例えば３０μｍ以下の厚さとし、可撓性を付与することが必要である。固体撮像素子を３０μｍ以下の厚さにする方法としては、例えば化学的機械研磨がある。
【００１０】
【発明の実施の形態】
以下、本発明の実施の形態について、添付の図面を参照して説明する。
（第１の実施の形態）
図１は本発明の第１の実施の形態の固体撮像装置を示す上面図、図２（ａ）は図１のＡ−Ａ線による断面図、図２（ｂ）は図１のＢ−Ｂ線による断面図である。
【００１１】
固体撮像素子１１は複数の受光部がマトリクス状に配列されてなる受光エリアを有している。この固体撮像素子１１は、従来の固体撮像素子の厚さが２５０μｍ程度であるのに対し約３０μｍと薄いことを除けば、基本的に従来の固体撮像素子と同様の構造を有している。固体撮像素子の構造の一例としては、例えば本願出願人による特開平１０−１３６３９１号公報等に記載されている。但し、本発明においては、上記公報に記載の固体撮像素子の構造に限定されるものではない。
【００１２】
パッケージ１２はプラスチックにより形成されており、図２（ａ），（ｂ）に示すように、固体撮像素子１１を収納するための凹部１３が設けられている。凹部１３の底面は、この図２（ａ），（ｂ）に示すように円筒状に湾曲している。固体撮像素子１１は、この円筒状の底面に沿って湾曲した状態でパッケージ１２内に収納されている。固体撮像素子１１の受光エリアが長方形の場合、受光エリアの長辺側が湾曲するように配置される。
【００１３】
パッケージ１２の上には透明カバーガラス１４が取り付けられており、パッケージ１２の内部空間の気密性が確保されるようになっている。また、パッケージ１２の下側には複数本の金属製リード１５が突き出しており、パッケージ１２の内側にはこれらのリード１５と電気的に接続された電極１６が設けられている。固体撮像素子１１は、ボンディングワイヤ１７によりパッケージ１２内の電極１６と電気的に接続されている。また、パッケージ１２の底部中央には、直径が１ｍｍ程度の吸引孔１６が設けられている。
【００１４】
以下、本実施の形態の固体撮像装置の製造方法について説明する。
まず、公知技術を使用し、従来と同様の方法により、半導体ウエハに複数の固体撮像素子を形成する。
その後、ウエハの裏面側を化学的機械研磨し、ウエハの厚さを約３０μｍとしてウエハに可撓性を付与する。化学的機械研磨装置としては、例えば東京精密社製の「ケミカルメカニカルグラインダー」を使用することができる。このような装置を使用することにより、細かい傷に起因するウエハ（又はチップ）の破損を防止しつつ、ウエハを約３０μｍの厚さにまで研磨することができる。なお、ウエハの研磨方法は特に限定されるものではないが、ウエハを破損することなく可撓性を有する厚さまで研磨できることが必要である。
【００１５】
次いで、裏面研磨後のウエハを切断し、各チップ（固体撮像素子１１）を相互に分離する。
一方、パッケージ１２を用意する。パッケージ１２は、例えばプラスチックの金型成形により形成する。この場合、図２に示すように、パッケージ１２には凹部１３と孔１８とを設けておく。凹部１３の底面の曲率は固体半導体素子１１の受光エリアの大きさや撮像レンズまでの距離に応じて設定する。例えば、固体撮像素子１１の受光エリアの大きさが１０ｍｍ×１０ｍｍであり、固体撮像素子１１と撮像レンズとの距離が５ｃｍであるとすると、受光エリアの中央部と端部との高さの差ａが約１００μｍとなるように曲率を設定する。また、この例では孔１８の直径を１ｍｍとしているが、これに限定するものではなく、後述するように孔１８を介して固体撮像素子１１を吸引できる大きさであればよい。
【００１６】
次に、固体撮像素子１１の裏面側又は凹部１３の底面に接着剤を塗布し、孔１８を吸引装置（排気装置）に接続して、固体半導体素子１１を凹部１３の底面に吸引し、固体半導体素子１１をパッケージ１２に接合する。その後、ワイヤボンディング装置を使用し、固体半導体素子１１の電極とパッケージ１２内の電極１６とをワイヤ１７で電気的に接続する。次いで、パッケージ１２の上部にカバーガラス１４を取り付け、固体半導体素子１１を密封する。これにより、固体撮像素子の製造が完了する。
【００１７】
なお、固体半導体素子１１をパッケージ１２に接合した後、孔１８を樹脂等で塞いでもよい。
本実施の形態においては、固体撮像素子１１を化学的機械研磨により極めて薄く研磨し、それによって固体撮像素子１１に可撓性を付与する。そして、この可撓性を付与した固体撮像素子１１を円筒状の曲面に沿って配置するので、図３に示すように、撮像レンズ２１から固体撮像素子の各受光部２３までの距離が均一化される。これにより、収差の影響を低減することができ、歪の少ない画像を得ることができる。
【００１８】
なお、図３において、２２はマイクロレンズを示す。本実施の形態においては、固体撮像素子１１を湾曲させて配置するので、マイクロレンズ２２はその中心軸を各受光部２３の中心軸にあわせて形成すればよい。すなわち、本実施の形態では、上記の方法により収差を低減することができるので、レンズずらしの手法を採用する必要がない。このため、マイクロレンズを形成するためのフォトマスクの設計が容易であり、製造コストを低減することができる。
【００１９】
また、本実施の形態においては、パッケージ１２の凹部底面の曲率を変更するだけで、撮像レンズの変更に対応することができる。
（第１の実施の形態の変形例）
図４は第１の実施の形態の変形例を示す図である。なお、図４（ａ）は図１のＡ−Ａ線による断面図、図４（ｂ）は図１のＢ−Ｂ線による断面図である。図４において、図１，２と同一物には同一符号を付して、その詳しい説明は省略する。
【００２０】
この例では、パッケージ１２の凹部１３の底面を球面状に湾曲させている。従って、固体撮像素子１１は、球面に沿って湾曲して配置される。
このように固体撮像素子１１を球面に沿って湾曲させて配置することにより、映像の水平方向の収差だけでなく、垂直方向の収差を低減することができる。
（第２の実施の形態）
図５（ａ），（ｂ）はいずれも本発明の第２の実施の形態の固体撮像装置の断面図である。本実施の形態の固体撮像装置の上面図は図１に示す第１の実施の形態の上面図と同様であるので、ここでは図１も参照して説明する。また、図５（ａ）は図１のＡ−Ａ線による断面を示し、図５（ｂ）は図１のＢ−Ｂ線による断面を示している。図５（ａ），（ｂ）において、図１，図２と同一物には同一符号を付してその詳しい説明は省略する。
【００２１】
本実施の形態においては、第１の実施の形態と同様にパッケージ１２の凹部１３の底面が円筒状又は球面状に湾曲しているが、パッケージ１２には孔が設けられていない。固体撮像素子１１は約３０μｍの厚さに形成されており、凹部１３の曲面に沿って湾曲した状態でパッケージ１２に固定されている。なお、図５（ｂ）では凹部１３の底面が球面状の場合を示しているが、凹部１３の底面が円筒状の場合は、孔１８がないことを除けば、図２（ｂ）に示す断面と同様の断面となる。
【００２２】
本実施の形態の固体撮像装置は、第１の実施の形態で説明した方法により固体撮像素子１１を形成した後、図６に示すように固体撮像素子１１の上側から圧縮空気を吹き付けて、固体撮像素子１１を凹部１３の曲面に沿った形状に湾曲させてパッケージ１２と接合する。そして、固体撮像素子１１の電極とパッケージ１２の電極とをボンディングワイヤ１７で電気的に接続した後、パッケージ１２にカバーガラス１４を取り付けて、パッケージ１２内の空間を封止する。
【００２３】
本実施の形態においても、第１の実施の形態と同様の効果が得られる。
（第３の実施の形態）
図７（ａ），（ｂ）はいずれも本発明の第３の実施の形態の固体撮像装置の断面図である。本実施の形態の固体撮像装置の上面図は図１に示す第１の実施の形態の上面図と同様であるので、ここでは図１も参照して説明する。また、図７（ａ）は図１のＡ−Ａ線による断面を示し、図７（ｂ）は図１のＢ−Ｂ線による断面を示している。図７（ａ），（ｂ）において、図１，図２と同一物には同一符号を付してその詳しい説明は省略する。
【００２４】
本実施の形態においては、パッケージ１２の凹部１３の縁部に段差部（突起）１３ａが形成されている。この段差部１３ａには傾斜面が設けられており、この傾斜面に固体撮像素子１１の縁部が接合され、固体撮像素子１１が円筒状又は球面状に湾曲して、パッケージ１２に接合されている。
本実施の形態においても、第１の実施の形態と同様に、パッケージ１２に設けられた孔１８から固体撮像素子１１を吸引して、固体撮像素子１１を円筒状又は球面に沿った形状に湾曲させて、パッケージ１２に接合する。
【００２５】
本実施の形態においても、第１及び第２の実施の形態と同様の効果が得られるのに加えて、パッケージ１２内に曲面を形成する必要がないので、パッケージ１２の製造が容易であるという利点がある。
（第４の実施の形態）
図８は本発明の第４の実施の形態の固体撮像装置の上面図、図９は図８のＣ−Ｃ線による断面図である。なお、図８，図９において、図１，図２と同一物には同一符号を付してその詳しい説明は省略する。
【００２６】
本実施の形態においては、パッケージ１２内の四隅に段差部１３ｂが設けられており、固体撮像素子１１はその四隅の部分が段差部１３ｂに接合されて、パッケージ１２内に球面状（又は，円筒状）に湾曲した状態で固定されている。１８は吸引孔であり、第１の実施の形態と同様に、固体撮像素子１１をパッケージ１２内に固定するときに、孔１８から固体撮像素子１１を吸引することにより、球面状に湾曲させる。
【００２７】
本実施の形態においても、第１及び第２の実施の形態と同様の効果を得ることができるのに加えて、パッケージ１２内に曲面を形成する必要がないので、パッケージ１２の製造が容易であるという利点がある。
なお、上記の実施の形態ではいずれもパッケージ１２がプラスチックにより形成されている場合について説明したが、これによりパッケージ１２の材質が限定されるものではなく、パッケージ１２は例えばセラミックスにより形成されていてもよい。
【００２８】
【発明の効果】
以上説明したように、本発明によれば、固体撮像素子を円筒状又は球面状に湾曲した状態でパッケージ内に収納しているので、撮像レンズから各受光部までの距離が均一化される。これにより、収差の影響が少ない高品質の映像を得ることができる。また、レンズずらしの手法を使用しなくても収差を低減できるので、マイクロレンズを形成するためのフォトマスクの設計が容易であり、製造コストを低減できるという効果もある。更に、固体半導体素子の曲率を変更するだけで、撮像レンズの変更に対応することができる。
【図面の簡単な説明】
【図１】図１は本発明の第１の実施の形態の固体撮像装置を示す上面図である。
【図２】図２（ａ）は図１のＡ−Ａ線による断面図、図２（ｂ）は図１のＢ−Ｂ線による断面図である。
【図３】図３は第１の実施の形態の効果を示す模式図である。
【図４】図４は第１の実施の形態の変形例を示す断面図であり、図４（ａ）は図１のＡ−Ａ線による断面、図４（ｂ）は図１のＢ−Ｂ線による断面を示す。
【図５】図５（ａ），（ｂ）は本発明の第２の実施の形態の固体撮像装置の断面図である。
【図６】図６は第２の実施の形態における固体撮像素子とパッケージとの密着方法を示す模式図である。
【図７】図７（ａ），（ｂ）は本発明の第３の実施の形態の固体撮像装置の断面図である。
【図８】図８は本発明の第４の実施の形態の固体撮像装置の上面図である。
【図９】図９は図８のＣ−Ｃ線による断面図である。
【図１０】図１０は従来の固体撮像装置を示す上面図である。
【図１１】図１１（ａ）は図１０のＤ−Ｄ線による断面図、図１１（ｂ）は図１０のＥ−Ｅ線による断面図である。
【図１２】図１２は、従来の固体撮像装置を使用したデジタルカメラの模式図である。
【図１３】図１３はレンズずらしを説明する模式図である。
【符号の説明】
１１，３１ 固体撮像素子、
１２，３２ パッケージ、
１３，３３ 凹部、
１３ａ，１３ｂ 段差部、
１４，３４ カバーガラス、
１５，３５ リード、
１６，３６ 電極、
１７，３７ ボンディングワイヤ、
１８ 孔、
２１，４１ 撮像レンズ、
２２，４２ マイクロレンズ、
２３，４３ 受光部。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a solid-state imaging device formed by housing a solid-state imaging device such as a CCD (Charge-Coupled Device) in a container (package) made of plastic or ceramics.
[0002]
[Prior art]
10 is a top view showing a conventional solid-state imaging device, FIG. 11A is a cross-sectional view taken along the line DD in FIG. 10, and FIG. 11B is a cross-sectional view taken along the line EE in FIG.
The solid-state imaging device 31 is formed of a silicon semiconductor, and a plurality of light receiving portions are arranged in a matrix on one surface thereof. Hereinafter, the portion where the light receiving portion of the solid-state imaging device 31 is disposed is referred to as a light receiving area.
[0003]
The thickness of the solid-state image sensor 31 is generally about 250 μm. The solid-state image sensor 31 is housed in a recess 33 of a package 32 formed of plastic or ceramics. A transparent cover glass 34 is attached to the upper part of the package 32 so that the airtightness of the internal space of the package 32 is ensured. However, the light can reach the light receiving area of the solid-state imaging device 31 through the cover glass 34.
[0004]
A plurality of metal leads 35 project from the lower side of the package 32, and electrodes 36 electrically connected to the leads 35 are formed inside the package 32. The solid-state imaging device 31 is electrically connected to these electrodes 36 by bonding wires 37.
FIG. 12 is a schematic diagram of a digital camera using the solid-state imaging device. The video is projected on the light receiving area of the solid-state imaging device 31 through the imaging lens 41 and the diaphragm 45 and converted into an electrical signal. In this case, since the distance to the imaging lens 41 is different between the center portion and the edge portion of the light receiving area, image distortion occurs. This is called aberration. 2. Description of the Related Art Conventionally, in a solid-state imaging device used for a digital camera, a so-called lens shift method is adopted in which the position of a microlens is shifted in order to reduce the influence of aberration.
[0005]
FIG. 13 is a schematic diagram for explaining lens shifting. As shown in FIG. 13, in the light receiving area of the solid-state imaging device, minute lenses called micro lenses 42 are formed corresponding to the respective light receiving portions 43. Although the microlens 42 is disposed immediately above the light receiving unit 43 at the center of the solid-state imaging device, the influence of aberration is reduced by shifting the center of the microlens 42 from the center of the light receiving unit 43 at the edge.
[0006]
[Problems to be solved by the invention]
However, the above-described aberration reduction method by shifting the lens has the following problems.
(1) It is necessary to adjust the shift amount of the microlens according to the imaging lens. For this reason, the types of photomasks for forming a microlens increase, which causes an increase in manufacturing cost.
[0007]
(2) Each time the imaging lens is changed, it is necessary to recreate the solid-state imaging device.
(3) Correction of imaging lens aberration by lens shifting is incomplete.
The present invention has been made in view of the problems of the prior art, and provides a solid-state imaging device that can easily correct aberrations regardless of lens shifting and can reduce manufacturing costs. Objective.
[0008]
[Means for Solving the Problems]
The above-described problem includes a package provided with a concave portion having a cylindrical or spherical curved surface, and a solid-state imaging device housed in the package in a curved state, and the package includes a portion of the concave portion. The solid-state imaging device is provided with a hole for adsorbing the solid-state imaging device.
In the present invention, the solid-state imaging device is housed in the package in a state of being curved into a cylindrical shape or a spherical shape. For this reason, the distance from each light-receiving part of a solid-state image sensor to an imaging lens is equalized, and an aberration can be reduced. Further, since the central axis of each light receiving portion is inclined in the direction of the imaging lens, it is not necessary to adopt a lens shifting method. For this reason, it is easy to design a photomask for forming a microlens, and the manufacturing cost can be reduced.
[0009]
In order to curve the solid-state imaging device into a cylindrical shape or a spherical shape, for example, a concave portion having a cylindrical or spherical bottom surface may be provided in the package, and the solid-state imaging device may be curved along the bottom surface of the concave portion. Further, a stepped portion (small protrusion) may be provided at the edge of the concave portion of the package, and the edge of the solid-state imaging device may be joined to the stepped portion to curve the solid-state imaging device. In order to bend the solid-state image sensor, it is necessary to give the solid-state image sensor a thickness of, for example, 30 μm or less and to provide flexibility. As a method for making the solid-state imaging device 30 μm or less, there is, for example, chemical mechanical polishing.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
(First embodiment)
FIG. 1 is a top view showing a solid-state imaging device according to the first embodiment of the present invention, FIG. 2A is a cross-sectional view taken along line AA in FIG. 1, and FIG. 2B is BB in FIG. It is sectional drawing by a line.
[0011]
The solid-state imaging device 11 has a light receiving area in which a plurality of light receiving portions are arranged in a matrix. The solid-state image pickup device 11 basically has the same structure as that of the conventional solid-state image pickup device except that the thickness of the conventional solid-state image pickup device is about 250 μm and is as thin as about 30 μm. An example of the structure of the solid-state imaging device is described in, for example, Japanese Patent Application Laid-Open No. 10-136391 by the applicant of the present application. However, the present invention is not limited to the structure of the solid-state imaging device described in the above publication.
[0012]
The package 12 is made of plastic, and as shown in FIGS. 2A and 2B, a recess 13 for accommodating the solid-state imaging device 11 is provided. The bottom surface of the recess 13 is curved in a cylindrical shape as shown in FIGS. 2 (a) and 2 (b). The solid-state imaging device 11 is accommodated in the package 12 in a state of being curved along the cylindrical bottom surface. When the light receiving area of the solid-state imaging device 11 is rectangular, the long side of the light receiving area is arranged to be curved.
[0013]
A transparent cover glass 14 is attached on the package 12 so that the airtightness of the internal space of the package 12 is ensured. A plurality of metal leads 15 protrude from the lower side of the package 12, and an electrode 16 electrically connected to the leads 15 is provided on the inner side of the package 12. The solid-state imaging element 11 is electrically connected to the electrode 16 in the package 12 by a bonding wire 17. A suction hole 16 having a diameter of about 1 mm is provided at the center of the bottom of the package 12.
[0014]
Hereinafter, a method for manufacturing the solid-state imaging device of the present embodiment will be described.
First, a plurality of solid-state imaging elements are formed on a semiconductor wafer by a known technique using a known technique.
Thereafter, the back side of the wafer is chemically mechanically polished to give the wafer a thickness of about 30 μm and give the wafer flexibility. As the chemical mechanical polishing apparatus, for example, a “chemical mechanical grinder” manufactured by Tokyo Seimitsu Co., Ltd. can be used. By using such an apparatus, it is possible to polish the wafer to a thickness of about 30 μm while preventing breakage of the wafer (or chip) due to fine scratches. The method for polishing the wafer is not particularly limited, but it is necessary that the wafer can be polished to a thickness having flexibility without damaging the wafer.
[0015]
Next, the wafer after the back surface polishing is cut to separate the chips (solid-state imaging device 11) from each other.
On the other hand, a package 12 is prepared. The package 12 is formed by plastic molding, for example. In this case, as shown in FIG. 2, the package 12 is provided with a recess 13 and a hole 18. The curvature of the bottom surface of the recess 13 is set according to the size of the light receiving area of the solid semiconductor element 11 and the distance to the imaging lens. For example, if the size of the light receiving area of the solid-state imaging device 11 is 10 mm × 10 mm and the distance between the solid-state imaging device 11 and the imaging lens is 5 cm, the difference in height between the center portion and the end portion of the light receiving area. The curvature is set so that a is about 100 μm. In this example, the diameter of the hole 18 is 1 mm. However, the diameter is not limited to this, and may be any size as long as the solid-state imaging element 11 can be sucked through the hole 18 as described later.
[0016]
Next, an adhesive is applied to the back surface side of the solid-state imaging element 11 or the bottom surface of the recess 13, the hole 18 is connected to a suction device (exhaust device), and the solid semiconductor element 11 is sucked to the bottom surface of the recess 13 to The semiconductor element 11 is bonded to the package 12. Thereafter, a wire bonding apparatus is used to electrically connect the electrode of the solid semiconductor element 11 and the electrode 16 in the package 12 with a wire 17. Next, a cover glass 14 is attached to the top of the package 12 to seal the solid semiconductor element 11. Thereby, manufacture of a solid-state image sensor is completed.
[0017]
Note that the hole 18 may be closed with a resin or the like after the solid semiconductor element 11 is bonded to the package 12.
In the present embodiment, the solid-state image sensor 11 is polished extremely thinly by chemical mechanical polishing, thereby imparting flexibility to the solid-state image sensor 11. And since the solid-state image sensor 11 which provided this flexibility is arrange | positioned along a cylindrical curved surface, as shown in FIG. 3, the distance from the imaging lens 21 to each light-receiving part 23 of a solid-state image sensor is equalized. Is done. Thereby, the influence of aberration can be reduced, and an image with less distortion can be obtained.
[0018]
In FIG. 3, reference numeral 22 denotes a microlens. In the present embodiment, since the solid-state imaging device 11 is arranged in a curved shape, the microlens 22 may be formed with its central axis aligned with the central axis of each light receiving unit 23. That is, in the present embodiment, the aberration can be reduced by the above method, so that it is not necessary to adopt a lens shifting method. For this reason, the design of the photomask for forming the microlens is easy, and the manufacturing cost can be reduced.
[0019]
Further, in the present embodiment, it is possible to cope with the change of the imaging lens only by changing the curvature of the bottom surface of the recess of the package 12.
(Modification of the first embodiment)
FIG. 4 is a diagram showing a modification of the first embodiment. 4A is a cross-sectional view taken along line AA in FIG. 1, and FIG. 4B is a cross-sectional view taken along line BB in FIG. 4, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0020]
In this example, the bottom surface of the recess 13 of the package 12 is curved into a spherical shape. Therefore, the solid-state image sensor 11 is curved and arranged along the spherical surface.
Thus, by arranging the solid-state imaging device 11 to be curved along the spherical surface, not only the horizontal aberration of the image but also the vertical aberration can be reduced.
(Second Embodiment)
FIGS. 5A and 5B are cross-sectional views of the solid-state imaging device according to the second embodiment of the present invention. Since the top view of the solid-state imaging device of the present embodiment is the same as the top view of the first embodiment shown in FIG. 1, it will be described here with reference to FIG. 5A shows a cross section taken along line AA in FIG. 1, and FIG. 5B shows a cross section taken along line BB in FIG. 5A and 5B, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0021]
In the present embodiment, the bottom surface of the recess 13 of the package 12 is curved in a cylindrical shape or a spherical shape as in the first embodiment, but the package 12 is not provided with a hole. The solid-state imaging device 11 is formed to a thickness of about 30 μm, and is fixed to the package 12 in a state of being curved along the curved surface of the recess 13. FIG. 5B shows a case where the bottom surface of the recess 13 is spherical. However, when the bottom surface of the recess 13 is cylindrical, it is shown in FIG. 2B except that there is no hole 18. The cross section is the same as the cross section.
[0022]
In the solid-state imaging device according to the present embodiment, the solid-state imaging device 11 is formed by the method described in the first embodiment, and then compressed air is blown from above the solid-state imaging device 11 as shown in FIG. The image sensor 11 is bent into a shape along the curved surface of the recess 13 and joined to the package 12. Then, after the electrodes of the solid-state imaging device 11 and the electrodes of the package 12 are electrically connected by bonding wires 17, a cover glass 14 is attached to the package 12 to seal the space in the package 12.
[0023]
Also in this embodiment, the same effect as that of the first embodiment can be obtained.
(Third embodiment)
7A and 7B are sectional views of a solid-state imaging device according to the third embodiment of the present invention. Since the top view of the solid-state imaging device of the present embodiment is the same as the top view of the first embodiment shown in FIG. 1, it will be described here with reference to FIG. 7A shows a cross section taken along line AA in FIG. 1, and FIG. 7B shows a cross section taken along line BB in FIG. 7A and 7B, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0024]
In the present embodiment, a step (projection) 13 a is formed at the edge of the recess 13 of the package 12. The stepped portion 13 a is provided with an inclined surface, and the edge of the solid-state imaging device 11 is joined to the inclined surface, and the solid-state imaging device 11 is curved into a cylindrical shape or a spherical shape and joined to the package 12. Yes.
Also in the present embodiment, as in the first embodiment, the solid-state imaging device 11 is sucked from the hole 18 provided in the package 12 and the solid-state imaging device 11 is bent into a cylindrical shape or a shape along the spherical surface. And bonded to the package 12.
[0025]
Also in this embodiment, in addition to obtaining the same effects as those of the first and second embodiments, it is not necessary to form a curved surface in the package 12, so that the package 12 can be easily manufactured. There are advantages.
(Fourth embodiment)
FIG. 8 is a top view of the solid-state imaging device according to the fourth embodiment of the present invention, and FIG. 9 is a cross-sectional view taken along the line CC of FIG. 8 and 9, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0026]
In the present embodiment, step portions 13 b are provided at the four corners in the package 12, and the solid-state imaging device 11 is joined to the step portions 13 b at the four corner portions so that the package 12 is spherical (or cylindrical). It is fixed in a curved state. Reference numeral 18 denotes a suction hole, which is curved into a spherical shape by sucking the solid-state image sensor 11 from the hole 18 when the solid-state image sensor 11 is fixed in the package 12 as in the first embodiment.
[0027]
Also in the present embodiment, in addition to obtaining the same effects as those of the first and second embodiments, it is not necessary to form a curved surface in the package 12, so that the package 12 can be easily manufactured. There is an advantage of being.
In each of the above embodiments, the case where the package 12 is formed of plastic has been described. However, the material of the package 12 is not limited by this, and the package 12 may be formed of ceramics, for example. Good.
[0028]
【The invention's effect】
As described above, according to the present invention, since the solid-state imaging device is housed in the package in a cylindrical or spherical shape, the distance from the imaging lens to each light receiving unit is made uniform. As a result, a high-quality image with little influence of aberration can be obtained. In addition, since aberrations can be reduced without using a lens shifting method, it is easy to design a photomask for forming a microlens, and the manufacturing cost can be reduced. Furthermore, it is possible to cope with the change of the imaging lens only by changing the curvature of the solid semiconductor element.
[Brief description of the drawings]
FIG. 1 is a top view showing a solid-state imaging device according to a first embodiment of the present invention.
2A is a cross-sectional view taken along line AA in FIG. 1, and FIG. 2B is a cross-sectional view taken along line BB in FIG.
FIG. 3 is a schematic diagram showing an effect of the first embodiment.
4 is a cross-sectional view showing a modification of the first embodiment, FIG. 4 (a) is a cross-sectional view taken along line AA of FIG. 1, and FIG. 4 (b) is a cross-sectional view of FIG. The cross section by B line is shown.
FIGS. 5A and 5B are cross-sectional views of a solid-state imaging device according to a second embodiment of the present invention.
FIG. 6 is a schematic diagram illustrating a method for closely attaching a solid-state imaging device and a package according to a second embodiment.
FIGS. 7A and 7B are sectional views of a solid-state imaging device according to a third embodiment of the present invention.
FIG. 8 is a top view of a solid-state imaging device according to a fourth embodiment of the present invention.
FIG. 9 is a cross-sectional view taken along the line CC of FIG.
FIG. 10 is a top view showing a conventional solid-state imaging device.
11A is a cross-sectional view taken along the line DD of FIG. 10, and FIG. 11B is a cross-sectional view taken along the line EE of FIG.
FIG. 12 is a schematic diagram of a digital camera using a conventional solid-state imaging device.
FIG. 13 is a schematic diagram for explaining lens shifting.
[Explanation of symbols]
11, 31 Solid-state image sensor,
12, 32 packages,
13, 33 recess,
13a, 13b steps,
14, 34 Cover glass,
15,35 leads,
16, 36 electrodes,
17, 37 Bonding wire,
18 holes,
21, 41 Imaging lens,
22, 42 Microlens,
23, 43 Light receiver.

Claims (2)

円筒状又は球面状の曲面を有する凹部が設けられたパッケージと、
湾曲した状態で前記パッケージ内に収納された固体撮像素子とを有し、
前記パッケージには、前記凹部の部分に前記固体撮像素子を吸着するための孔が設けられていることを特徴とする固体撮像装置。 A package provided with a recess having a cylindrical or spherical curved surface ;
A solid-state image sensor housed in the package in a curved state ,
The package is provided with a hole for adsorbing the solid-state imaging element in the concave portion . 前記パッケージは、前記固体撮像素子を収納する前記凹部と、前記凹部の縁部に設けられた段差部とを有し、前記固体撮像素子の縁部又は四隅の部分は前記段差部に固定されていることを特徴とする請求項１に記載の固体撮像装置。The package, said recess for accommodating the solid-state imaging device, and a step portion provided in an edge portion of the recess, edge or corners of the portion of the solid-state imaging device is fixed to the step portion The solid-state imaging device according to claim 1, wherein:
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