JP4137459B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP4137459B2
JP4137459B2 JP2002031154A JP2002031154A JP4137459B2 JP 4137459 B2 JP4137459 B2 JP 4137459B2 JP 2002031154 A JP2002031154 A JP 2002031154A JP 2002031154 A JP2002031154 A JP 2002031154A JP 4137459 B2 JP4137459 B2 JP 4137459B2
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Japan
Prior art keywords
insulating film
film
tft
island
channel formation
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Expired - Fee Related
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JP2002031154A
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Japanese (ja)
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JP2003234474A (ja
JP2003234474A5 (enExample
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002031154A priority Critical patent/JP4137459B2/ja
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Publication of JP2003234474A5 publication Critical patent/JP2003234474A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2002031154A 2002-02-07 2002-02-07 半導体装置及びその作製方法 Expired - Fee Related JP4137459B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002031154A JP4137459B2 (ja) 2002-02-07 2002-02-07 半導体装置及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002031154A JP4137459B2 (ja) 2002-02-07 2002-02-07 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2003234474A JP2003234474A (ja) 2003-08-22
JP2003234474A5 JP2003234474A5 (enExample) 2005-08-25
JP4137459B2 true JP4137459B2 (ja) 2008-08-20

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JP2002031154A Expired - Fee Related JP4137459B2 (ja) 2002-02-07 2002-02-07 半導体装置及びその作製方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4759919B2 (ja) * 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP4852694B2 (ja) 2004-03-02 2012-01-11 独立行政法人産業技術総合研究所 半導体集積回路およびその製造方法
US8049253B2 (en) 2007-07-11 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7982250B2 (en) * 2007-09-21 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8044464B2 (en) * 2007-09-21 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2420913B1 (en) 2007-12-03 2017-09-06 Semiconductor Energy Laboratory Co. Ltd. Mobile phone
KR102597464B1 (ko) * 2016-06-10 2023-11-06 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

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JP2003234474A (ja) 2003-08-22

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