JP4131498B2 - 半導体放射線検出器 - Google Patents

半導体放射線検出器 Download PDF

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Publication number
JP4131498B2
JP4131498B2 JP2003397978A JP2003397978A JP4131498B2 JP 4131498 B2 JP4131498 B2 JP 4131498B2 JP 2003397978 A JP2003397978 A JP 2003397978A JP 2003397978 A JP2003397978 A JP 2003397978A JP 4131498 B2 JP4131498 B2 JP 4131498B2
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Prior art keywords
cdte
growth layer
type
radiation detector
resistance
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Expired - Fee Related
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JP2003397978A
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English (en)
Japanese (ja)
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JP2005159156A (ja
Inventor
和人 安田
マダン ニラウラ
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Nagoya Industrial Science Research Institute
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Nagoya Industrial Science Research Institute
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Priority to JP2003397978A priority Critical patent/JP4131498B2/ja
Priority to US10/580,833 priority patent/US7355185B2/en
Priority to EP04819480A priority patent/EP1691422B1/de
Priority to PCT/JP2004/017891 priority patent/WO2005053038A1/ja
Publication of JP2005159156A publication Critical patent/JP2005159156A/ja
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Publication of JP4131498B2 publication Critical patent/JP4131498B2/ja
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
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    • H01L21/02433—Crystal orientation
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/0248—Tellurides
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2003397978A 2003-11-27 2003-11-27 半導体放射線検出器 Expired - Fee Related JP4131498B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003397978A JP4131498B2 (ja) 2003-11-27 2003-11-27 半導体放射線検出器
US10/580,833 US7355185B2 (en) 2003-11-27 2004-11-24 Semiconductor radiation detector and process for producing the same
EP04819480A EP1691422B1 (de) 2003-11-27 2004-11-24 Herstellungsverfahren eines Halbleiter-Strahlungsdetektors
PCT/JP2004/017891 WO2005053038A1 (ja) 2003-11-27 2004-11-24 半導体放射線検出器及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003397978A JP4131498B2 (ja) 2003-11-27 2003-11-27 半導体放射線検出器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007276652A Division JP4107616B2 (ja) 2007-10-24 2007-10-24 半導体放射線検出器の製造方法

Publications (2)

Publication Number Publication Date
JP2005159156A JP2005159156A (ja) 2005-06-16
JP4131498B2 true JP4131498B2 (ja) 2008-08-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003397978A Expired - Fee Related JP4131498B2 (ja) 2003-11-27 2003-11-27 半導体放射線検出器

Country Status (4)

Country Link
US (1) US7355185B2 (de)
EP (1) EP1691422B1 (de)
JP (1) JP4131498B2 (de)
WO (1) WO2005053038A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2433648A (en) * 2005-12-21 2007-06-27 Durham Scient Crystals Ltd Radiation detector formed by deposition of bulk semiconductor crystal layers
JP5662001B2 (ja) * 2005-12-21 2015-01-28 クロメック リミテッド 半導体デバイス及びその製造方法
JP4881071B2 (ja) 2006-05-30 2012-02-22 株式会社日立製作所 放射線検出器、及びこれを搭載した放射線撮像装置
GB0712618D0 (en) * 2007-06-29 2007-08-08 Durham Scient Crystals Ltd Semiconductor device structure and method of manufacture thereof
EP2028509A1 (de) * 2007-08-09 2009-02-25 European Organisation for Nuclear Research CERN Strahlungsüberwachungsvorrichtung
US8237126B2 (en) 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
US8742522B2 (en) 2012-04-10 2014-06-03 Ev Products, Inc. Method of making a semiconductor radiation detector
US9530902B2 (en) * 2012-06-20 2016-12-27 Oxford Instruments Analytical Oy Two-dimensional guard structure and a radiation detector with the same
KR20170097748A (ko) 2014-12-19 2017-08-28 쥐-레이 스위츨란드 에스에이 모놀리식 cmos 통합된 픽셀 검출기와, 다양한 적용예를 포함하는 입자 검출 및 이미지화를 위한 시스템 및 방법
EP3345220B1 (de) 2015-08-31 2022-03-30 G-Ray Switzerland SA Photonenzählender 3d-computertomograph mit monolithischen cmos-integrierten pixeldetektoren
AU2018225659B2 (en) 2017-02-24 2023-02-02 First Solar, Inc. Doped photovoltaic semiconductor layers and methods of making
CN114447146B (zh) * 2021-12-27 2023-05-26 江苏赛诺格兰医疗科技有限公司 一种sipm探测器的返修方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070774A (ja) * 1983-09-27 1985-04-22 Yokogawa Hokushin Electric Corp 放射線検出器
US5306386A (en) * 1993-04-06 1994-04-26 Hughes Aircraft Company Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates
US5382542A (en) * 1993-07-26 1995-01-17 Hughes Aircraft Company Method of growth of II-VI materials on silicon using As passivation
US5742089A (en) * 1995-06-07 1998-04-21 Hughes Electronics Growth of low dislocation density HGCDTE detector structures
US5646426A (en) * 1995-12-12 1997-07-08 Santa Barbara Research Center Contact metal diffusion barrier for semiconductor devices
US5838053A (en) * 1996-09-19 1998-11-17 Raytheon Ti Systems, Inc. Method of forming a cadmium telluride/silicon structure
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement

Also Published As

Publication number Publication date
EP1691422A1 (de) 2006-08-16
US7355185B2 (en) 2008-04-08
JP2005159156A (ja) 2005-06-16
US20070090292A1 (en) 2007-04-26
WO2005053038A1 (ja) 2005-06-09
EP1691422A4 (de) 2008-12-24
EP1691422B1 (de) 2011-07-06

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