JP4127269B2 - レーザ素子 - Google Patents

レーザ素子 Download PDF

Info

Publication number
JP4127269B2
JP4127269B2 JP2005046004A JP2005046004A JP4127269B2 JP 4127269 B2 JP4127269 B2 JP 4127269B2 JP 2005046004 A JP2005046004 A JP 2005046004A JP 2005046004 A JP2005046004 A JP 2005046004A JP 4127269 B2 JP4127269 B2 JP 4127269B2
Authority
JP
Japan
Prior art keywords
layer
type
current confinement
type contact
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005046004A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005203804A (ja
JP2005203804A5 (enExample
Inventor
慎一 長濱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2005046004A priority Critical patent/JP4127269B2/ja
Publication of JP2005203804A publication Critical patent/JP2005203804A/ja
Publication of JP2005203804A5 publication Critical patent/JP2005203804A5/ja
Application granted granted Critical
Publication of JP4127269B2 publication Critical patent/JP4127269B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
JP2005046004A 2005-02-22 2005-02-22 レーザ素子 Expired - Fee Related JP4127269B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005046004A JP4127269B2 (ja) 2005-02-22 2005-02-22 レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005046004A JP4127269B2 (ja) 2005-02-22 2005-02-22 レーザ素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000079426A Division JP3671807B2 (ja) 2000-03-22 2000-03-22 レーザ素子

Publications (3)

Publication Number Publication Date
JP2005203804A JP2005203804A (ja) 2005-07-28
JP2005203804A5 JP2005203804A5 (enExample) 2007-05-17
JP4127269B2 true JP4127269B2 (ja) 2008-07-30

Family

ID=34824769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005046004A Expired - Fee Related JP4127269B2 (ja) 2005-02-22 2005-02-22 レーザ素子

Country Status (1)

Country Link
JP (1) JP4127269B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149939A (ja) * 2005-11-28 2007-06-14 Hitachi Ltd 半導体レーザ装置
DE102012111512B4 (de) 2012-11-28 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstreifenlaser
US20240313507A1 (en) * 2021-07-19 2024-09-19 Sony Group Corporation Vertical cavity surface emitting laser device, vertical cavity surface emitting laser device array, and method of producing a vertical cavity surface emitting laser device

Also Published As

Publication number Publication date
JP2005203804A (ja) 2005-07-28

Similar Documents

Publication Publication Date Title
KR100763829B1 (ko) 반도체 레이저 소자 및 그 제조방법
JP3897186B2 (ja) 化合物半導体レーザ
JP3468082B2 (ja) 窒化物半導体素子
JP5963004B2 (ja) 窒化物半導体発光素子
JP6152848B2 (ja) 半導体発光素子
JP4529372B2 (ja) 半導体レーザ素子
JP3671807B2 (ja) レーザ素子
KR100545999B1 (ko) 질화물반도체소자
JPH08274414A (ja) 窒化物半導体レーザ素子
US20060192209A1 (en) Optical integrated semiconductor light emitting device
JPH1146038A (ja) 窒化物半導体レーザ素子及びその製造方法
JP4127269B2 (ja) レーザ素子
JP4111696B2 (ja) 窒化物系半導体レーザ素子
JPH11204882A (ja) 窒化物半導体レーザ素子及びその製造方法
JP2003142769A (ja) 窒化物半導体レーザ素子
US12444907B2 (en) Light-emitting device
JPH09260771A (ja) 窒化物半導体レーザ素子およびその製造方法
JP3950473B2 (ja) 化合物半導体レーザ
CN100375349C (zh) 半导体激光元件及其制造方法
JP3842539B2 (ja) Ｌｅｄアレイ
JP3565202B2 (ja) 窒化物半導体レーザ素子
JP2003309326A (ja) 面発光型半導体レーザ素子
JPH09293933A (ja) 半導体レ−ザ素子及びその製造方法
JP2005328096A (ja) 窒化物系半導体発光素子
JP2005333163A (ja) 窒化物系半導体発光素子

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050511

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070322

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070322

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070828

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071029

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071127

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080125

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080422

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080505

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110523

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110523

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110523

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120523

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120523

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130523

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130523

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140523

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees