JP4127231B2 - Manufacturing method of tape carrier for semiconductor device and etching apparatus for the same - Google Patents

Description

  The present invention relates to a method of manufacturing a tape carrier for a semiconductor device that forms a wiring pattern by etching a conductor layer provided on an insulating tape base material, and a method of manufacturing a tape carrier having a bendability called COF, The present invention relates to the etching processing apparatus.

  In recent years, a tape carrier for TAB (Tape Automated Bonding) having a bendability called COF (Chip On Film or Chip On Flex) which forms a desired wiring pattern on a tape-like insulating film and is joined to a chip after plating. Attention has been paid.

  In this COF tape, copper foil is metalized on a tape base material made of polyimide tape (a method in which a nickel alloy is sputtered onto a PI tape to form a seed layer, and then copper plating is applied) or a casting method (PI varnish on the copper foil). After forming a wiring pattern including a copper lead by etching the copper foil using a two-layer substrate material (two-layer COF tape) bonded by a method of applying and curing by coating), the surface of the copper lead The portion is coated with a solder resist, and the inner lead exposed without being coated thereon is tin-plated for manufacturing. This tin plating is applied for connection with the IC chip and the liquid crystal glass, and the solder resist is provided for insulation and improvement of mechanical strength.

  In the COF tape, there is no device hole or flying lead, and a fine wiring (wiring pattern) including a copper lead and an inner lead made of copper foil is formed in a state of being bonded to a polyimide film (tape base material). Therefore, there is no deformation of the inner lead, and since the copper foil is thin, ultra fine wiring with a pitch of 40 μm or less becomes possible.

  The wiring pattern is usually formed as follows. That is, a photoresist is applied to the entire upper surface of the copper foil, the photoresist is exposed to a desired pattern shape with ultraviolet rays using a photoresist mask, and the exposed photoresist portion is dissolved and removed with a developer. . The copper foil part not covered with the photoresist is removed by chemically dissolving (etching) with acid by shower etching using a nozzle, and remaining on the insulating film by dissolving and removing the photoresist with an alkaline solution. A desired wiring pattern is formed from the copper foil.

  However, the pattern of the carrier tape is recently required to be finer. For this reason, an etching apparatus for processing a carrier tape requires an apparatus that can etch a narrower lead interval deeper, that is, an apparatus having an improved etching factor.

  The etching factor of the etching apparatus depends on conditions such as etching solution temperature, etching solution supply amount, spray pressure, spray nozzle interval and height, and film carrier tape conveyance speed. Fine etching is possible by adjusting these etching factors optimally.

  However, since the portion where the copper foil is etched is a depression, the conventional etching method is beginning to see a limit in the miniaturization of etching. In other words, in the etching tank, if the etchant accumulates in the recess of the etched part of the film carrier tape, the new etchant reaches the copper foil part to be etched at the bottom of the recess even if the etchant is sprayed from the top. Therefore, the mass transfer of the etching solution in the etching portion is not performed smoothly. As the pattern becomes finer, the shape of the recess in the etched portion becomes steeper with a narrower opening and a deeper bottom. Therefore, the mass transfer of the etching solution becomes more difficult, and the etching takes time and becomes uneven. This causes troubles such as etching and side etching.

Therefore, in the configuration where the etching liquid is transported while spraying the surface of the film carrier tape from the spray nozzle provided in the upper part of the etching treatment tank, the film carrier tape is rotated and laterally vibrated, thereby etching in the depression of the etched portion. It has been proposed that the liquid flows out and the etching liquid in the recess is stirred so that the mass transfer of the liquid component is actively performed (for example, see Patent Document 1).
JP-A-7-273153

  However, the manufacturing process of a conventional TAB tape carrier having a bendability called COF has the following problems. That is, in the insulating film with Cu having a two-layer structure, when the insulating film is thinned to about 40 μm, the copper layer is thinned to 12 μm to 8 μm, and the pitch of the copper wiring is as fine as 30 μm, the conventional spray nozzle In the shower etching by, wiring formation becomes very fast. For this reason, it is difficult to control the etching property, the wiring width is narrowed, and it has become difficult to manufacture easily. Although it is an effective method to rotate the film carrier tape in a rotational manner as in Patent Document 1, provision of means for controlling the etching property of the ultrafine wiring more easily is desired.

  At present, by devising the opening width of the photoresist pattern from the mask design, proper etching is possible up to a copper wiring pitch of the conductor pattern layer of the copper layer on the insulating film up to 30 μm, A Sn plating layer is formed and a TAB tape is manufactured.

  However, if the pitch becomes finer than that, proper etching becomes impossible only by devising the opening width of the photoresist pattern. FIG. 8 is a structural example of a conventional adhesiveless two-layer copper-coated polyimide insulating film tape (two-layer COF tape). In the case of a TAB tape, when the copper wiring pitch of the Cu-coated insulating film of this two-layer tape structure becomes as fine as 20 μm, the copper layer thickness before etching needs to be 5 μm to 3 μm. High speed etching. That is, when shower etching is performed, the wiring width is narrowed in a short time, making it difficult to optimally adjust the etching factor, and the wiring width is narrowed, making it difficult to manufacture ultrafine wiring. For this reason, the yield of a product will fall rapidly.

  Therefore, the object of the present invention is to solve the above-mentioned problems and to reduce the narrowness of the copper wiring width when etching the copper wiring pattern of the TAB tape with a goal of setting it to a fine pitch of 5 μm to 30 μm. An object of the present invention is to provide a manufacturing method of a tape carrier for a semiconductor device and an etching processing apparatus for the same that enable excellent processing control.

  In order to achieve the above object, the present invention is configured as follows.

  The manufacturing method of the tape carrier for semiconductor devices according to the invention of claim 1 is a two-layer tape in which a copper layer is provided on a tape base material without an adhesive layer, or a triple layer in which a copper layer is provided via a small amount of an adhesive layer. After applying a photoresist on the copper layer using a tape, a wiring pattern is formed through the steps of exposure, development, etching, and photoresist removal, and plating for flip-chip bonding of semiconductor elements to this ( For example, in the method for manufacturing a semiconductor device tape carrier including a step of performing Sn plating, the above-mentioned two-layer tape or three-layer tape may be used to form a wiring pattern having a fine pitch of 5 to 30 μm in the etching step. Etching solution that flows in the direction opposite to the tape transport direction filled in the etching tank (for example, commercially available ferric chloride aqueous solution) Liquid).

  According to a second aspect of the present invention, in the method for manufacturing a tape carrier for a semiconductor device according to the first aspect, the flow opposite to the tape conveyance direction is opposite to the tape conveyance direction disposed in the etching solution. It is generated by a slit nozzle.

  According to a third aspect of the present invention, in the method for manufacturing a tape carrier for a semiconductor device according to the first or second aspect, an etching solution is sprayed onto the photoresist pattern surface from a spray nozzle disposed in the etching tank. .

According to a fourth aspect of the present invention, in the method for manufacturing a tape carrier for a semiconductor device according to the third aspect, the ejection pressure of the slit nozzle is 2.0 kgf / cm ² or less.

  According to a fifth aspect of the present invention, in the method for manufacturing a semiconductor device tape carrier according to any one of the first to fourth aspects, the thickness of the copper layer of the two-layer tape or the three-layer tape is 0.2 μm to 12 μm. It is characterized by that.

  The invention of claim 6 is the method of manufacturing a tape carrier for a semiconductor device according to any one of claims 1 to 5, wherein the adhesive constituting the three-layer tape has a heat resistance of a glass transition temperature of 180 ° C. or higher. And the dynamic viscoelasticity up to 400 ° C. is 0.5 Gpa or more.

  An etching processing apparatus according to a seventh aspect of the invention is an etching processing apparatus for carrying out an etching step in the manufacturing method according to any one of the first to sixth aspects, wherein the tape is conveyed downstream in the tape conveying direction in the etching tank. A slit nozzle that creates a flow in the direction opposite to the direction was provided, and a spray nozzle that sprayed the etchant onto the photoresist pattern surface of the tape being transported was disposed above the tape transported in the etching tank. It is characterized by.

  The invention according to claim 8 is the etching processing apparatus according to claim 7, wherein an etching solution discharge port is provided on the upstream side in the tape conveying direction in the etching tank, and the etching solution discharged from the etching solution is returned to the above through a return pipe. It is characterized by being circulated through the slit nozzle.

  According to the present invention, the etching liquid is made to flow by the slit nozzle set in the liquid in the direction opposite to the tape transport direction, and passes through the photoresist pattern surface of the tape in the flowing etching liquid. Therefore, etching can be performed at a moderate rate in forming a wiring pattern with a fine pitch of 5 μm to 30 μm. For this reason, it is possible to control the dimensional accuracy of etching by reducing the width of the wiring and extending the time until the etching end point to, for example, 100 seconds or more and performing the etching at a moderate rate.

Further, according to the present invention, in the jet from the slit nozzle, the etching pressure of the etching liquid is controlled, and the jet pressure of the slit nozzle is 2.0 kgf / cm ² or less, so that a good etching factor is maintained. On the other hand, it is possible to obtain an appropriate space width and top width in the fine wiring gap.

  Therefore, the desired COF tape can be manufactured with high yield.

  Hereinafter, the present invention will be described based on the illustrated embodiments.

  In this embodiment, an etching apparatus and a manufacturing method that enable fine etching with a wiring pitch of 20 to 10 μm in a TAB tape using an adhesive-less Cu plating tape (double-layer tape) or a three-layer tape having an adhesive. set to target. When the copper wiring pitch becomes as fine as 20 μm, the copper layer thickness becomes 5 μm to 3 μm. When the wiring pitch is a fine pitch of 5 μm to 30 μm, the thickness of the copper layer is 0.2 μm to 12 μm.

  Specifically, the two-layer tape handled here is a two-layer tape 14 in which a copper layer 2 having a thickness of about 8 μm is bonded to a polyimide film 1 having a thickness of about 25 μm as a tape substrate by a metalizing method as shown in FIG. Alternatively, as shown in FIG. 8, a two-layer tape 13 (roll or polyimide varnish cast product) in which a copper layer 2 having a thickness of about 9 μm is bonded to a polyimide film 1 having a thickness of about 25 μm by a casting method is used. By etching, a wiring pattern including the copper lead 2a is formed as shown in FIG.

  Instead of these two-layer tapes 13 and 14, a three-layer tape 18 as shown in FIG. 10 can be used. The three-layer tape 18 has a structure in which, for example, a polyimide layer 1 having a thickness of about 25 μm is provided with a copper layer 2 having a thickness of about 9 μm through a very small amount of a thin adhesive layer 11 of 3 to 6 μm. It has advantages such as low base material price and can be joined with newly developed flip chip bonder, so it is expected to be frequently used as T-COF (TAB-Chip on Film) in the future. . In the case of this embodiment, the adhesive of the three-layer tape 18 is one that has a heat resistance of a glass transition temperature Tg of 180 ° C. or higher and a dynamic viscoelasticity up to 400 ° C. of 0.5 Gpa or higher. .

  In the formation of the wiring pattern, a photoresist 3 is applied to the entire upper surface of the copper layer 2, exposed to a desired pattern shape with ultraviolet rays, and the exposed photoresist portion is dissolved and removed with a developer. The copper foil portion not covered with the photoresist 3 is chemically dissolved (etched) with acid by the etching apparatus of the present invention and removed as shown in FIG. The photoresist 3 is dissolved and removed with an alkaline solution. Thus, a desired wiring pattern is formed by the copper layer 2 remaining on the insulating film. Thereafter, a part of the surface of the copper lead 2a is covered with a solder resist (not shown), and the inner lead exposed without being covered with this is subjected to tin plating (not shown) to obtain a COF tape.

  FIG. 1 shows an outline of the configuration of the etching apparatus. Here, FIG. 1A shows a sectional view of the etching processing apparatus, and FIG. 1B shows a perspective view of the slit nozzle as seen from the lower surface side. This etching apparatus can transport the inside of the etching process through the transport roll 23 by means of perforations called perforations drilled on both sides of the tape 24. A slit nozzle 15 is disposed on the downstream side in the tape transport direction 6 in the etching tank 7, and is configured to generate a flow in the direction opposite to the tape transport direction 6. In other words, as shown in FIG. 1B, the slit nozzle 15 is formed with a slit portion 25 for jetting the etching solution, and the slit portion 25 opens toward the upstream side in the tape transport direction 6. ing. The slit nozzle 15 is partly immersed in the etching solution 4 in the etching tank 7 at a predetermined distance from the tape 24. Further, an etching solution discharge port 16 is provided on the upstream side in the tape transport direction 6 in the etching tank 7, and the etching solution discharged from this is temporarily stored in the etching solution storage tank 22 via the return pipe 17. The pump 21 circulates to the slit nozzle 15. 8 indicates the return direction of the liquid in the pipe.

A spray nozzle (not shown) may be disposed above the tape 24 in the etching tank 7. The spray nozzle is located at a position higher than the pattern surface of the photoresist 3 in the etching tank 7 in which the nozzle is immersed in the etching liquid in the etching tank 7 and is ejected from these nozzles. The etching solution is sprayed onto the photoresist pattern surface of the transported tape. On the other hand, the pressure of the etching liquid sprayed from the slit nozzle 15 is controlled, the pressure ejected from the slit nozzle is 2.0 kgf / cm ² or less, and the layer of the etching liquid on the photoresist pattern surface of the tape blows away. It is adjusted to the extent that it is not. In FIG.
Next, the main points in this embodiment will be described.

(A) [Reason for adopting a three-layer tape structure or an adhesive-less Cu plating tape structure]
The present invention relates to a tape structure for a semiconductor device for mounting a semiconductor chip to constitute a semiconductor package, and more particularly to a tape structure of a tape carrier having a bendability called COF, a fine pitch etching apparatus, and a manufacturing method. The thickness of the copper layer can be adjusted from 0.2 μm to 12 μm by the three-layer tape structure or the Cu plating tape structure. In particular, in a three-layer tape structure, the thickness of the copper layer can be adjusted from 2 μm to 12 μm by soft etching after pasting thick copper foils. Regardless of the presence or absence of adhesive, the copper plating structure is used because the copper layer thickness can be adjusted from 0.2μm to 12μm because electro copper plating is performed after forming a thin copper layer by sputtering. did.

(B) [Reason for setting the thickness of the copper layer to 0.2 μm to 10 μm]
In the insulating film with Cu having a two-layer structure, the lower limit of the copper layer thickness is 0.2 μm, which is the minimum film thickness that can be stably formed by sputtering or additional electrolytic copper plating. This is because. The upper limit of the thickness of the copper layer is 12 μm, which is the limit for forming a fine wiring pitch of 30 μm (copper wiring width: 15 μm, space: 15 μm). This is because the linearity is lost, defects (wiring chipping, thinning, thickening) increase, yield is poor, and manufacturing is impossible.

(C) [Reason for controlling the jetting pressure of the etching solution, and the slit nozzle has a jetting pressure of 2.0 kgf / cm ² or less]
FIG. 5 shows a conventional etching model when the thickness of the copper layer (foil) exceeds 12 μm. (A) shows the etching shape of the lead in the static liquid, and (b) shows the etching shape of the lead by the jet 9. In the figure, a is the surface before etching, and b is the virtual convection front end of the etching seed source.

Under the condition that the copper layer (foil) 2 is 12 μm or less in thickness, the etching pressure of the etching solution is controlled according to the present invention, and the slit nozzle is set to “the ejection pressure is 2.0 kgf / cm ² or less”. Etching is performed at a moderate rate, and the time until the wiring width is narrowed and the etching end point is extended for more than 60 seconds, so that the dimensional accuracy of etching can be controlled.

  In the present invention, as described with reference to FIG. 1, the slit nozzle 15 is transported to the TAB tape so that the etching solution layer on the photoresist pattern surface of the TAB tape flows in the direction opposite to the transport direction. It is set in the liquid in the opposite direction. By using the slit nozzle 15 to flow the etching solution 4 in the direction opposite to the tape transport direction, the wiring width narrows and the time until the etching end point is extended to 100 seconds or more, and etching is performed at a moderate rate. It became possible to control the dimensional accuracy of etching.

(D) [Adhesive of three-layer tape, Tg: heat resistance of glass transition temperature of 180 ° C. or higher and reason for dynamic viscoelasticity up to 400 ° C. of 0.5 Gpa or higher]
Three-layer tape uses a small amount of adhesive. In view of this, there is a demand for a device that eliminates the occurrence of defective distortion due to heat in the heat treatment in the curing process of the thermosetting adhesive, and the adhesive used for this purpose requires heat resistance.

  Here, it is considered that the heat resistance of 180 degrees × 2 hours or more is a limit value, but in the three-layer structure which is the structure of the present invention, this requirement is set by setting the thickness of the adhesive to 2 to 8 μm. Can be satisfied. The structure of the three-layer tape which is the structure of the present invention even if there is distortion due to heat in the heat treatment in the curing process of the thermosetting adhesive with a heat resistance of 180 degrees x 2 hours or more being the limit value In this case, if the thickness of the base film is selected in the range of 50 μm to 6.5 μm, this eliminates the occurrence of distortion due to heat, which can be solved.

  Next, the reason why the dynamic viscoelasticity up to 400 ° C. is 0.5 Gpa or more is to reduce the dent deformation of the adhesive layer due to the pressure at the time of flip chip connection.

[Example 1]
The product name “Kapton EN” manufactured by Sumitomo Metal Mining Co., Ltd., that is, pre-cured by applying a photoresist with a roll coater to a double-layer tape made by applying Cu plating with a copper thickness of 8 μm to a polyimide resin with a thickness of 38 μm and a width of 105 mm. Then, after photoreaction with a projection exposure machine, alkali development was performed and main curing was performed. Then, as Comparative Example 1, when etching was performed by a conventional shower etching method using a spray nozzle (wiring pitch 25 μm), the etching time was 60 seconds or less, and there was no wiring linearity, wiring width defects (wiring chipping, thinning, (Weight) increased, yield was poor, and production was impossible.

On the other hand, as Example 1, as shown in FIG. 1, a slit nozzle 15 is set in an etching solution (ferric chloride aqueous solution) in an etching tank having a length of 1 m in a direction opposite to the tape conveyance direction, and the tape is conveyed. Etching (wiring pitch 25 μm) was performed by flowing an etching solution in a direction opposite to the direction and passing the etching solution through the etching solution. The total etching time was 60 minutes, and the flow rate of the etching solution was 2.0 liters / minute at a pressure of 1.5 kgf / cm ² . When etching was performed under such conditions, the time until the wiring width narrowed and the etching end point was extended to 100 seconds or more, and the etching could be performed at a moderate rate, and the dimensional accuracy of etching could be controlled.

  After etching the copper layer, the wiring pattern was further subjected to Sn plating for flip-chip bonding of the semiconductor element. Sn plating was baked, a thermosetting solder resist was applied on the printing plate, and a heat treatment (120 ° C. × 1 hour) in the curing process was performed. As a result, it was possible to manufacture a TAB tape as a product with high yield.

[Example 2]
As Example 2, a three-layer tape manufactured by Yodogawa Paper Mill was used. This three-layer material is made of Ube Industries' “UPILEX S”, that is, a polyimide resin having a thickness of 25 μm and a width of 105 mm, coated with 5 μm of adhesive MK, and rolled with 9 μm thick copper foil. Laminated with a laminator.

  A photoresist was applied and pre-cured on the three-layer tape with a roll coater and photoreacted with a projection exposure machine, followed by alkali development and main curing. And as Comparative Example 2, when etching was performed by a conventional shower etching method using a spray nozzle (wiring pitch 25 μm), the etching time was 60 seconds or less, and there was no wiring linearity, wiring width defects (wiring chipping, thinning, (Weight) increased, yield was poor, and production was impossible.

On the other hand, as Example 2, the injection pressure of the etching liquid in the slit nozzle is controlled, and “the etching pressure of the slit nozzle is 2.0 kgf / cm ² or less”, as in Example 1, By adopting that the liquid layer is made to flow by the slit nozzle 15 set in the liquid in the direction opposite to the direction of transporting the TAB tape, etching is performed at a moderate speed, and the wiring width is reduced. The time until the end point of the thinning and etching was extended to 120 seconds or more, and the dimensional accuracy of etching could be controlled.

  After etching the copper layer, the wiring pattern was further subjected to Sn plating for flip-chip bonding of the semiconductor element. Sn plating was baked, a thermosetting solder resist was applied with a printing plate, and a heat treatment (120 ° C. × 1 hour) in the curing step was performed. As a result, it was possible to manufacture a TAB tape as a product with high yield.

  In Examples 1 and 2 described above, the case where a three-layer material with an adhesive thickness of 3 to 6 μm and an adhesive-less copper plating material were used was described. However, as shown in FIG. Is sufficiently applicable to a copper plating material (three-layer tape) having a thickness of 12 μm. Of course, the present invention can be sufficiently applied to the roll of FIG. 9 or a cast product of polyimide varnish.

<Effect of Example>
(1) In the conventional shower etching method using a spray nozzle, the etching time is 60 seconds or less as shown in the explanatory diagram (FIG. 6) of the narrowing of the wiring width when the copper layer (foil) is 8 μm thick. There was no linearity and there were many defects in wiring width (wiring chipping, thinning, thickening), and the yield was poor and production was impossible.

However, in accordance with the present invention, the pressure of the etching solution jet from the slit nozzle is controlled so that “the slit nozzle has an ejection pressure of 2.0 kgf / cm ² or less” and “the etching solution layer is TAB By adopting “flowing with a slit nozzle set in the liquid in the direction opposite to the conveyance direction”, etching is performed at a moderate rate, and the time until the wiring width is reduced and the etching end point is 120 times. It was possible to control the dimensional accuracy of etching by extending the time to more than a second.

  (2) According to the present invention, as shown in FIG. 1, “Etching solution is set in the solution with respect to the layer of the etching solution on the photoresist pattern surface of the TAB tape in the direction opposite to the transport direction of the TAB tape. By adopting “flowing with a slit nozzle”, it is possible to control the dimensional accuracy of etching by narrowing the wiring width and extending the time to the etching end point to 100 seconds or more, performing etching at a moderate rate. did it.

  (3) After etching the copper layer, Sn plating was further performed. Sn plating was baked, and a thermosetting solder resist was applied on the printing plate, followed by heat treatment (120 ° C. × 1 hour) in the curing process. As a result, it was possible to manufacture products with high yield.

  (4) As a result of the above, it has become possible to provide a COF tape with suppressed yield and improved yield.

  Next, the relationship between etching factor, top width, bottom width, and space was examined. Here, it is assumed that the thickness of the Cu layer is 5 μm and the wiring pitch is 20 μm. The definition of the etching factor (Ef) is Ef = 2 × copper layer thickness / (bottom width−top width). The space was defined as space = (20 μm−bottom width).

図４に示すように、従来のスプレーノズルによるシャワーエッチング方式（ｄ）の場合は、レジスト開口幅８．０μｍでトップ幅が１．０μｍ〜２．０μｍと過小で、不適当である。すなわち、従来のスプレーノズルによるシャワーエッチング方式では、エッチングファクターは良好であるが、エッチングが銅の厚さの５μｍに対して過酷に早くトップ幅が１．０から２．０μｍとなり、目標の５．０μｍより過小で、チップとの接合あるいはガラスパネルとのＡＣＦ接合は不可能となる。 In Table 1, (a) when there is no slit nozzle, (b) when the slit nozzle is installed and the ejection pressure is less than 2.0, (c) when the slit nozzle is installed and the ejection pressure is 2.0 or more In this case, (d) the case of a conventional shower etching method using a spray nozzle is shown. This is summarized in FIG. 3 and FIG.

As shown in FIG. 4, in the case of the conventional shower etching method (d) using a spray nozzle, the resist opening width is 8.0 μm and the top width is too small, 1.0 μm to 2.0 μm, which is inappropriate. That is, in the conventional shower etching method using a spray nozzle, the etching factor is good, but the etching is severely quick with respect to 5 μm of the copper thickness, and the top width becomes 1.0 to 2.0 μm. If it is less than 0 μm, bonding with a chip or ACF bonding with a glass panel becomes impossible.

  On the other hand, as shown in FIG. 3, in the case of no slit nozzle (a), when the ejection pressure is less than 2.0 (b) when the slit nozzle is installed, the ejection pressure is 2.0 or more (c) when the slit nozzle is installed. In this case, the resist opening width is 8.0 μm and the top width is 2.0 μm to 8.0 μm.

  Among these, as shown in Table 1, when there is no slit nozzle (a), the top width becomes excessive (8.0 μm), which is inappropriate. Further, when the ejection pressure is 2.0 or more (c) when the slit nozzle is installed, the top width becomes too small (2.0 μm), which is also inappropriate.

  Therefore, the most appropriate range is a case where the ejection pressure is less than 2.0 by installing the slit nozzle of (b) where an appropriate top width of 4.8 μm to 6.0 μm is obtained.

  As can be seen from the above, when the slit nozzle is installed, the etching factor is improved. That is, in the dip method, since there is no flow rate, the top width is wide and the etching speed is slow, so the bottom width is wide and the space is too small, which is inappropriate. By installing a slit nozzle and making the ejection pressure appropriate at less than 2.0, the top width and the bottom width can be appropriately approximated.

  As shown in FIG. 3, when the ejection pressure of the slit nozzle is less than 2.0, the etching factor is better than 2.0 or more. In the dip method, since there is no flow rate, the top width is wide and the etching rate is slow, so the bottom width is wide and the space is too small, which is inappropriate. Therefore, when the ejection pressure of the slit nozzle is 2.0 or more, the flow velocity is faster than the dip method, and the top width is narrowed accordingly. On the other hand, when the ejection pressure is less than 2.0, the flow velocity is more appropriate than the dip method, and the top width is widened accordingly. Therefore, it is concluded that the case (b) is the best.

BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which showed the etching processing apparatus of this invention, Fig.1 (a) shows sectional drawing of an etching processing apparatus, FIG.1 (b) shows the lower surface side perspective view of a slit nozzle. It is. It is the schematic which showed the TAB tape conveyed in the etching liquid of this invention. The relationship between the ejection pressure of the slit nozzle, the etching factor, and the top width is shown. (A) is the case without the slit nozzle, (b) is the case where the ejection pressure is less than 2.0 by installing the slit nozzle ( (Invention), (c) is a diagram showing a case where a slit nozzle is installed and the ejection pressure is 2.0 or more. It is the figure which showed the relationship with the etching factor in the case of the shower etching system (d) by the conventional spray nozzle. It is an etching model in case the conventional copper layer is 12 micrometers or more in thickness, (a) shows the etching shape of the lead in a still liquid, (b) shows the etching shape of the lead by a jet etching liquid. FIG. 10 is a diagram illustrating the jet etching effect by a shower etching method using a conventional spray nozzle, and is an explanatory diagram in which the wiring width is narrowed when the copper layer is 12 μm or less in thickness. It is the figure which showed the structural example of the double layer tape which consists of an adhesive-less double layer copper covering polyimide insulation film which can apply this invention. It is the figure which showed the structural example of the double layer tape which is a cast of the roll or polyimide varnish which can apply this invention. It is the figure which showed the structural example of the copper plating three-layer tape with an adhesive which can apply this invention. It is the figure which showed the structural example of the other three-layer tape which can apply this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Polyimide film 2 Copper layer 2a Copper lead 3 Photoresist 4 Etching liquid 5 Flow of etching liquid 6 Tape conveyance direction 7 Etching tank 10 Jet from slit nozzle 13, 14 Double-layer tape 15 Slit nozzle 16 Etching liquid outlet 18 Three Layer tape

Claims (8)

After applying a photoresist on the copper layer, using a two-layer tape provided with a copper layer without an adhesive layer on the tape substrate or a three-layer tape provided with a copper layer via a small amount of adhesive layer, In a method for manufacturing a tape carrier for a semiconductor device, including a step of forming a wiring pattern through each step of exposure, development, etching, and photoresist stripping, and performing plating for flip chip bonding of a semiconductor element thereto.
In the etching step, the photoresist pattern surface of the two-layer tape or the three-layer tape is opposite to the tape conveyance direction filled in the etching tank so as to form a wiring pattern with a fine pitch of 5 to 30 μm. A method of manufacturing a semiconductor device tape carrier, comprising: passing through an etching solution that flows in a direction. In the manufacturing method of the tape carrier for semiconductor devices according to claim 1,
A method of manufacturing a tape carrier for a semiconductor device, wherein a flow in a direction opposite to the tape transport direction is generated by a slit nozzle disposed in an etching solution in a direction opposite to the tape transport direction. In the manufacturing method of the tape carrier for semiconductor devices according to claim 1 or 2,
A manufacturing method of a tape carrier for a semiconductor device, characterized in that an etching solution is sprayed onto the photoresist pattern surface from a spray nozzle disposed above the two-layer tape or three-layer tape conveyed in the etching tank. In the manufacturing method of the tape carrier for semiconductor devices according to claim 3,
A method for producing a tape carrier for a semiconductor device, wherein the ejection pressure of the slit nozzle is 2.0 kgf / cm ² or less. In the manufacturing method of the tape carrier for semiconductor devices in any one of Claims 1-4,
A method for producing a tape carrier for a semiconductor device, wherein the thickness of the copper layer of the two-layer tape or the three-layer tape is 0.2 μm to 12 μm. In the manufacturing method of the tape carrier for semiconductor devices in any one of Claims 1-5,
A tape carrier for a semiconductor device, wherein the adhesive constituting the three-layer tape has a heat resistance of a glass transition temperature of 180 ° C or higher and a dynamic viscoelasticity up to 400 ° C of 0.5 Gpa or higher. Manufacturing method. In the etching processing apparatus for performing the etching process in the manufacturing method according to any one of claims 1 to 6,
A slit nozzle that generates a flow in the direction opposite to the tape transport direction is provided downstream of the tape transport direction in the etching tank, and the photoresist pattern surface of the tape transported above the tape transported in the etching tank. An etching apparatus characterized in that a spray nozzle for spraying an etching solution is disposed on the surface. In the etching processing apparatus according to claim 7,
An etching apparatus characterized in that an etching solution discharge port is provided on the upstream side in the tape conveying direction in the etching tank, and the etching solution discharged from the etching tank is circulated to the slit nozzle via a return pipe.

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