JP4124978B2 - ポジ型レジスト組成物 - Google Patents
ポジ型レジスト組成物 Download PDFInfo
- Publication number
- JP4124978B2 JP4124978B2 JP2001107305A JP2001107305A JP4124978B2 JP 4124978 B2 JP4124978 B2 JP 4124978B2 JP 2001107305 A JP2001107305 A JP 2001107305A JP 2001107305 A JP2001107305 A JP 2001107305A JP 4124978 B2 JP4124978 B2 JP 4124978B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- embedded image
- acid
- general formula
- alkyl group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 0 CC(C(OC1(*)CCCCC1)=O)=C Chemical compound CC(C(OC1(*)CCCCC1)=O)=C 0.000 description 6
- KVFBWJQEYQIHQS-UHFFFAOYSA-N C=[Br]c(cc1)ccc1S(C(S(c(cc1)ccc1Br)(=O)=O)=N)(=O)=O Chemical compound C=[Br]c(cc1)ccc1S(C(S(c(cc1)ccc1Br)(=O)=O)=N)(=O)=O KVFBWJQEYQIHQS-UHFFFAOYSA-N 0.000 description 1
- GYJLUFVWMQRWRK-UHFFFAOYSA-N CC(C)(C)S(C(S(C1CCCCC1)(=O)=O)=N)(=O)=O Chemical compound CC(C)(C)S(C(S(C1CCCCC1)(=O)=O)=N)(=O)=O GYJLUFVWMQRWRK-UHFFFAOYSA-N 0.000 description 1
- ZUDJQGHYRUTXEK-UHFFFAOYSA-N Cc(cc1)ccc1S(C(S(C1CCCCC1)(=O)=O)=N)(=O)=O Chemical compound Cc(cc1)ccc1S(C(S(C1CCCCC1)(=O)=O)=N)(=O)=O ZUDJQGHYRUTXEK-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001107305A JP4124978B2 (ja) | 2001-04-05 | 2001-04-05 | ポジ型レジスト組成物 |
KR1020020017975A KR100907268B1 (ko) | 2001-04-05 | 2002-04-02 | 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법 |
TW091106744A TW583511B (en) | 2001-04-05 | 2002-04-03 | Positive resist composition |
US10/114,985 US7179578B2 (en) | 2001-04-05 | 2002-04-04 | Positive resist composition |
KR1020080101728A KR100920164B1 (ko) | 2001-04-05 | 2008-10-16 | 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법 |
KR1020090069621A KR100950508B1 (ko) | 2001-04-05 | 2009-07-29 | 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001107305A JP4124978B2 (ja) | 2001-04-05 | 2001-04-05 | ポジ型レジスト組成物 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002303978A JP2002303978A (ja) | 2002-10-18 |
JP2002303978A5 JP2002303978A5 (enrdf_load_stackoverflow) | 2006-01-19 |
JP4124978B2 true JP4124978B2 (ja) | 2008-07-23 |
Family
ID=18959642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001107305A Expired - Lifetime JP4124978B2 (ja) | 2001-04-05 | 2001-04-05 | ポジ型レジスト組成物 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4124978B2 (enrdf_load_stackoverflow) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7452655B2 (en) | 2002-11-05 | 2008-11-18 | Jsr Corporation | Acrylic copolymer and radiation-sensitive resin composition |
JP4225817B2 (ja) | 2003-03-31 | 2009-02-18 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP4360836B2 (ja) | 2003-06-04 | 2009-11-11 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP4300420B2 (ja) | 2004-06-21 | 2009-07-22 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP4274057B2 (ja) * | 2004-06-21 | 2009-06-03 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP4485913B2 (ja) * | 2004-11-05 | 2010-06-23 | 東京応化工業株式会社 | レジスト組成物の製造方法およびレジスト組成物 |
JP4881687B2 (ja) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4881686B2 (ja) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP5019055B2 (ja) * | 2006-01-25 | 2012-09-05 | 日産化学工業株式会社 | ポジ型感光性樹脂組成物及びそれから得られる硬化膜 |
JP4832237B2 (ja) * | 2006-09-27 | 2011-12-07 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
EP1975714A1 (en) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method |
JP4621754B2 (ja) | 2007-03-28 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
US7635554B2 (en) | 2007-03-28 | 2009-12-22 | Fujifilm Corporation | Positive resist composition and pattern forming method |
WO2009110388A1 (ja) | 2008-03-04 | 2009-09-11 | Jsr株式会社 | 感放射線性組成物及び重合体並びに単量体 |
JP2011075750A (ja) * | 2009-09-30 | 2011-04-14 | Jsr Corp | 化学増幅型レジスト用感放射線性樹脂組成物および重合体 |
JP2013088763A (ja) * | 2011-10-21 | 2013-05-13 | Jsr Corp | フォトレジスト組成物 |
-
2001
- 2001-04-05 JP JP2001107305A patent/JP4124978B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2002303978A (ja) | 2002-10-18 |
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