JP4105996B2 - ワイヤボンディング方法 - Google Patents

ワイヤボンディング方法 Download PDF

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Publication number
JP4105996B2
JP4105996B2 JP2003279556A JP2003279556A JP4105996B2 JP 4105996 B2 JP4105996 B2 JP 4105996B2 JP 2003279556 A JP2003279556 A JP 2003279556A JP 2003279556 A JP2003279556 A JP 2003279556A JP 4105996 B2 JP4105996 B2 JP 4105996B2
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Japan
Prior art keywords
wire
ball
neck height
bond point
loop
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Expired - Fee Related
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JP2003279556A
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English (en)
Japanese (ja)
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JP2005045135A (ja
Inventor
竜成 三井
直希 関根
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Shinkawa Ltd
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Shinkawa Ltd
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Priority to JP2003279556A priority Critical patent/JP4105996B2/ja
Priority to TW093115630A priority patent/TW200504902A/zh
Priority to KR1020040052573A priority patent/KR100571344B1/ko
Publication of JP2005045135A publication Critical patent/JP2005045135A/ja
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Publication of JP4105996B2 publication Critical patent/JP4105996B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
JP2003279556A 2003-07-25 2003-07-25 ワイヤボンディング方法 Expired - Fee Related JP4105996B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003279556A JP4105996B2 (ja) 2003-07-25 2003-07-25 ワイヤボンディング方法
TW093115630A TW200504902A (en) 2003-07-25 2004-06-01 Wire-bonding method
KR1020040052573A KR100571344B1 (ko) 2003-07-25 2004-07-07 와이어 본딩방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003279556A JP4105996B2 (ja) 2003-07-25 2003-07-25 ワイヤボンディング方法

Publications (2)

Publication Number Publication Date
JP2005045135A JP2005045135A (ja) 2005-02-17
JP4105996B2 true JP4105996B2 (ja) 2008-06-25

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JP2003279556A Expired - Fee Related JP4105996B2 (ja) 2003-07-25 2003-07-25 ワイヤボンディング方法

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KR (1) KR100571344B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW200504902A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0838127A (ja) * 1994-08-04 1996-02-13 Asahi Chem Ind Co Ltd 非コーヒー乳性飲料及びその製法
US8110931B2 (en) 2008-07-11 2012-02-07 Advanced Semiconductor Engineering, Inc. Wafer and semiconductor package
TWI372453B (en) 2008-09-01 2012-09-11 Advanced Semiconductor Eng Copper bonding wire, wire bonding structure and method for processing and bonding a wire
TWI415707B (zh) * 2008-09-01 2013-11-21 Advanced Semiconductor Eng 銅製銲線、銲線接合結構及銲線接合方法
JP2011054727A (ja) * 2009-09-01 2011-03-17 Oki Semiconductor Co Ltd 半導体装置、その製造方法、及びワイヤボンディング方法
CN102097317B (zh) * 2010-12-01 2015-04-29 佛山市南海区宏乾电子有限公司 一种全包封装开关电源三极管的生产方法
JP5890798B2 (ja) * 2013-05-27 2016-03-22 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
BR112015021244A2 (pt) * 2014-10-03 2018-05-08 Intel Coproration pacote de matrizes empilhadas sobrepostas com colunas verticais
JP6166769B2 (ja) * 2015-12-11 2017-07-19 ラピスセミコンダクタ株式会社 半導体装置
CN119016828A (zh) * 2023-05-26 2024-11-26 长江存储科技有限责任公司 引线键合装置、引线键合方法及半导体器件

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TWI323013B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2010-04-01
KR100571344B1 (ko) 2006-04-14
KR20050013074A (ko) 2005-02-02
TW200504902A (en) 2005-02-01
JP2005045135A (ja) 2005-02-17

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