TW200504902A - Wire-bonding method - Google Patents

Wire-bonding method

Info

Publication number
TW200504902A
TW200504902A TW093115630A TW93115630A TW200504902A TW 200504902 A TW200504902 A TW 200504902A TW 093115630 A TW093115630 A TW 093115630A TW 93115630 A TW93115630 A TW 93115630A TW 200504902 A TW200504902 A TW 200504902A
Authority
TW
Taiwan
Prior art keywords
ball
neck portion
bonding
high neck
wire
Prior art date
Application number
TW093115630A
Other languages
English (en)
Other versions
TWI323013B (zh
Inventor
Tatsunari Mitsui
Naoki Sekine
Original Assignee
Shinkawa Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Publication of TW200504902A publication Critical patent/TW200504902A/zh
Application granted granted Critical
Publication of TWI323013B publication Critical patent/TWI323013B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/4805—Shape
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/85909—Post-treatment of the connector or wire bonding area
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    • H01L2224/85947—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape by mechanical means, e.g. "pull-and-cut", pressing, stamping
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
TW093115630A 2003-07-25 2004-06-01 Wire-bonding method TW200504902A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003279556A JP4105996B2 (ja) 2003-07-25 2003-07-25 ワイヤボンディング方法

Publications (2)

Publication Number Publication Date
TW200504902A true TW200504902A (en) 2005-02-01
TWI323013B TWI323013B (zh) 2010-04-01

Family

ID=34265628

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115630A TW200504902A (en) 2003-07-25 2004-06-01 Wire-bonding method

Country Status (3)

Country Link
JP (1) JP4105996B2 (zh)
KR (1) KR100571344B1 (zh)
TW (1) TW200504902A (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097317A (zh) * 2010-12-01 2011-06-15 庄玉巧 一种全包封装开关电源三极管的生产方法
US8053906B2 (en) 2008-07-11 2011-11-08 Advanced Semiconductor Engineering, Inc. Semiconductor package and method for processing and bonding a wire
US8110931B2 (en) 2008-07-11 2012-02-07 Advanced Semiconductor Engineering, Inc. Wafer and semiconductor package
TWI415707B (zh) * 2008-09-01 2013-11-21 Advanced Semiconductor Eng 銅製銲線、銲線接合結構及銲線接合方法
TWI578466B (zh) * 2014-10-03 2017-04-11 英特爾股份有限公司 具有垂直柱之重疊堆疊的晶粒封裝

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0838127A (ja) * 1994-08-04 1996-02-13 Asahi Chem Ind Co Ltd 非コーヒー乳性飲料及びその製法
JP2011054727A (ja) * 2009-09-01 2011-03-17 Oki Semiconductor Co Ltd 半導体装置、その製造方法、及びワイヤボンディング方法
JP5890798B2 (ja) * 2013-05-27 2016-03-22 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
JP6166769B2 (ja) * 2015-12-11 2017-07-19 ラピスセミコンダクタ株式会社 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053906B2 (en) 2008-07-11 2011-11-08 Advanced Semiconductor Engineering, Inc. Semiconductor package and method for processing and bonding a wire
US8110931B2 (en) 2008-07-11 2012-02-07 Advanced Semiconductor Engineering, Inc. Wafer and semiconductor package
TWI415707B (zh) * 2008-09-01 2013-11-21 Advanced Semiconductor Eng 銅製銲線、銲線接合結構及銲線接合方法
CN102097317A (zh) * 2010-12-01 2011-06-15 庄玉巧 一种全包封装开关电源三极管的生产方法
CN102097317B (zh) * 2010-12-01 2015-04-29 佛山市南海区宏乾电子有限公司 一种全包封装开关电源三极管的生产方法
TWI578466B (zh) * 2014-10-03 2017-04-11 英特爾股份有限公司 具有垂直柱之重疊堆疊的晶粒封裝
US10256208B2 (en) 2014-10-03 2019-04-09 Intel Corporation Overlapping stacked die package with vertical columns
US10629561B2 (en) 2014-10-03 2020-04-21 Intel Corporation Overlapping stacked die package with vertical columns

Also Published As

Publication number Publication date
KR20050013074A (ko) 2005-02-02
KR100571344B1 (ko) 2006-04-14
JP4105996B2 (ja) 2008-06-25
JP2005045135A (ja) 2005-02-17
TWI323013B (zh) 2010-04-01

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