JP4101522B2 - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法 Download PDF

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Publication number
JP4101522B2
JP4101522B2 JP2002022741A JP2002022741A JP4101522B2 JP 4101522 B2 JP4101522 B2 JP 4101522B2 JP 2002022741 A JP2002022741 A JP 2002022741A JP 2002022741 A JP2002022741 A JP 2002022741A JP 4101522 B2 JP4101522 B2 JP 4101522B2
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JP
Japan
Prior art keywords
chamber
organic compound
film
region
evaporation source
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Expired - Fee Related
Application number
JP2002022741A
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English (en)
Japanese (ja)
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JP2002302757A5 (enExample
JP2002302757A (ja
Inventor
舜平 山崎
哲史 瀬尾
真由美 水上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
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Priority to JP2002022741A priority Critical patent/JP4101522B2/ja
Publication of JP2002302757A publication Critical patent/JP2002302757A/ja
Publication of JP2002302757A5 publication Critical patent/JP2002302757A5/ja
Application granted granted Critical
Publication of JP4101522B2 publication Critical patent/JP4101522B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

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  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2002022741A 2001-02-01 2002-01-31 成膜装置及び成膜方法 Expired - Fee Related JP4101522B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002022741A JP4101522B2 (ja) 2001-02-01 2002-01-31 成膜装置及び成膜方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001026184 2001-02-01
JP2001-26184 2001-02-01
JP2002022741A JP4101522B2 (ja) 2001-02-01 2002-01-31 成膜装置及び成膜方法

Publications (3)

Publication Number Publication Date
JP2002302757A JP2002302757A (ja) 2002-10-18
JP2002302757A5 JP2002302757A5 (enExample) 2005-08-11
JP4101522B2 true JP4101522B2 (ja) 2008-06-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002022741A Expired - Fee Related JP4101522B2 (ja) 2001-02-01 2002-01-31 成膜装置及び成膜方法

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JP (1) JP4101522B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737177B2 (en) * 2001-11-08 2004-05-18 Xerox Corporation Red organic light emitting devices
US8808457B2 (en) * 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
CN1723741B (zh) 2002-12-12 2012-09-05 株式会社半导体能源研究所 发光装置、制造装置、成膜方法及清洁方法
US7510913B2 (en) 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
JP4549697B2 (ja) * 2004-03-04 2010-09-22 株式会社アルバック 成膜装置及び成膜方法
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
TWI316977B (en) * 2005-08-04 2009-11-11 Dms Co Ltd Catalytic metal doping apparatus for low temperature poly-silicon crystallization and catalytic metal doping method using the same
CN100381604C (zh) * 2006-01-25 2008-04-16 中国科学院力学研究所 多源蒸发物理气相沉积系统
JP2007258237A (ja) * 2006-03-20 2007-10-04 Univ Nagoya 有機積層構造材料の構造安定化方法とその利用
EP2014137B1 (en) * 2006-05-04 2017-08-09 LG Display Co., Ltd. Organic light-emitting device having light-emitting pattern and method for preparing the same
JP5145325B2 (ja) * 2007-03-01 2013-02-13 株式会社アルバック 薄膜形成方法及び薄膜形成装置
US8384283B2 (en) * 2007-09-20 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
EP2230703A3 (en) 2009-03-18 2012-05-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus and manufacturing method of lighting device
JP5775511B2 (ja) 2010-03-18 2015-09-09 株式会社半導体エネルギー研究所 成膜方法
WO2011114872A1 (ja) * 2010-03-18 2011-09-22 株式会社半導体エネルギー研究所 成膜方法及び成膜用基板の作製方法
JP5666556B2 (ja) 2010-03-18 2015-02-12 株式会社半導体エネルギー研究所 成膜方法及び成膜用基板の作製方法
US9273079B2 (en) 2011-06-29 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Organometallic complex, light-emitting element, light-emitting device, electronic device, and lighting device
US9741946B2 (en) 2012-12-20 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element containing organic iridium exhibits blue-green to blue light emission
WO2022174932A1 (en) * 2021-02-22 2022-08-25 Applied Materials, Inc. Apparatus, system and method for curing ink printed on a substrate

Also Published As

Publication number Publication date
JP2002302757A (ja) 2002-10-18

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