JP4096636B2 - Wafer support jig and semiconductor element manufacturing method using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer supporting tool capable of suppressing warping of a wafer and simultaneously supporting the wafer, and to provide a semiconductor device manufacturing method using the supporting tool. <P>SOLUTION: The supporting tool 1 is provided with an annular first support member 10 and an annular second support member 30. The first support member 10 has an annular first support surface 52. A wafer 2 is mounted on the first support surface 52, and the second support member 30 is disposed therefrom. Thus, an outer periphery of the wafer 2 is pinched in a thickness direction between the annular first support surface 52 and a second support surface 56 provided in the second support member 30. In the wafer 2 set to the supporting tool 1, both surfaces of a front surface 2a and a rear surface 2b are exposed from an aperture 50 in an inward direction of a supporting jig 50. At the end surface of the back of the first support member 10, a groove 20 led from an outer periphery of the supporting tool 1 to the aperture 50 is provided. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wafer support jig for supporting a semiconductor wafer. The present invention also relates to a method for manufacturing a semiconductor element using the wafer support jig.
[0002]
[Prior art]
In order to manufacture a thin (thin) semiconductor element, a technique for handling a thin wafer has become important. Thin wafers (for example, a thickness of 150 μm or less) are liable to be cracked or warped during a wafer processing process or a transfer process. Therefore, workability and product yield tend to decrease.
Such a thin wafer is subjected to wafer processing (referred to as a process for forming a pattern such as a circuit) on the front side surface of the wafer, and then back-grinding the back side surface (back side) of the wafer. Often manufactured with a reduced thickness. Prior to this backgrinding, adhesive tape is affixed to the front side of the wafer, and after backgrinding (after reducing the thickness of the wafer), the tape is always affixed to either side of the wafer for handling ( There is known a method for preventing the wafer from cracking by performing conveyance, dicing, or the like. That is, the wafer is supported by a tape attached to the wafer.
[0003]
[Problems to be solved by the invention]
However, in the method of supporting the wafer by attaching an adhesive tape or the like, such a tape usually has poor shape maintenance in the thickness direction (direction perpendicular to the wafer surface), so it is difficult to sufficiently suppress the warpage of the wafer. It is. For example, when wafer processing is further performed on a wafer after back grinding (when a back electrode is formed on the back side of the wafer), if the wafer is supported in a warped state, This is not preferable because the degree of treatment becomes uneven.
[0004]
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a wafer support jig that can support a wafer while suppressing warpage of the wafer. Another object of the present invention is to provide a method of manufacturing a semiconductor device using such a wafer support jig.
[0005]
[Means, actions and effects for solving problems]
The present inventor has found that the above problem can be solved by holding the peripheral edge of the wafer in the thickness direction and supporting the wafer, thereby completing the present invention.
[0006]
The wafer support jig provided by the present invention has an annular first support surface. And second An annular first support member having a stepped cylindrical surface rising from the outer peripheral end of one support surface; The second Having a second support surface opposite the one support surface Annular A second support member . Steps The attached cylindrical surface includes a first cylindrical surface continuous to the first support surface; The second From one cylinder No. A second cylindrical surface provided on the side far from the one supporting surface and having a larger inner diameter than the first cylindrical surface; The second It has an annular surface formed between one cylindrical surface and its second cylindrical surface . First Wafer can be accommodated inside one cylinder surface The second Inside the two cylinders Is the first Two support members can be accommodated . Branch When the jig is set with a wafer The second Two support surfaces Is ring The first support member and the second support member sandwich the peripheral edge of the wafer in the thickness direction, and the first support member And second support member From the opening formed on the inner periphery side of the wafer Both sides Is configured to be exposed.
[0007]
When the wafer is set on the support jig having such a configuration, the peripheral edge of the wafer is sandwiched in the thickness direction along the annular first support surface. Since the location where the wafer is sandwiched is widened in the circumferential direction of the wafer, the effect of preventing warpage of the wafer is excellent. When a wafer is set on a support jig having an annular first support member and an annular second support member, both surfaces of the wafer are exposed from openings formed on the inner peripheral sides of both support members. Yes. By configuring so that both sides of the wafer are exposed in this way, With the wafer set on the support jig, Processing to form electrodes on the exposed parts on the front and back sides Can be applied. At this time, since the wafer is prevented from warping by the support jig, the degree of processing (sputtering processing, ion implantation processing, etc.) performed on the wafer surface can be made more uniform.
In addition, according to the support jig having such a configuration, it is easy to position the first support member and the second support member and to position the wafer. Furthermore, since the minimum distance between the first support surface and the second support surface is determined, the effect of preventing wafer damage can be further enhanced. For example, even when the outer peripheral portion of the support jig on which the wafer is set is pressed in the thickness direction of the wafer, the pressing force is prevented from being directly transmitted to the wafer sandwiched therebetween. The stepped cylindrical surface can have a shape corresponding to a positioning portion (orientation flat, V notch, etc.) provided on the wafer.
[0008]
In a preferred embodiment of the support jig of the present invention, a groove extending from the outer periphery of the support jig to the opening is provided. When such a groove is provided, it is easy to bring fluid (gas, chemical solution, etc.) into contact with the wafer exposed from the opening. This is convenient for performing wafer processing with the wafer set on a support jig. In particular, when a plurality of supporting jigs are stacked to perform wafer processing (etching processing, heat treatment, etc.), the effect of facilitating the fluid to be easily distributed to the wafer exposed from the opening is exhibited well.
[0011]
According to the present invention, there is provided a semiconductor element manufacturing method using any of the wafer support jigs described above. The manufacturing method includes a step of setting a wafer on any one of the wafer support jigs of the present invention and a step of performing wafer processing on the wafer exposed from the opening of the support jig. A typical example of such a wafer processing step is a step of forming electrodes on the wafer. This manufacturing method is particularly suitable when the wafer set on the support jig is thin (for example, 150 μm or less in thickness).
[0012]
The step of performing the wafer processing on the wafer set on the support jig is preferably performed in a state where no tape is applied to the wafer. Wafer processing steps (eg, forming electrodes on the wafer) may be performed under high temperature and / or high vacuum conditions. When a wafer with a tape is exposed to high temperature and / or high vacuum, depending on the material of the tape (tape substrate, adhesive, etc.), gas is generated due to decomposition or volatilization of the material, and this gas is generated on the wafer. There is a risk of contamination. Alternatively, the tape may deteriorate and become difficult to peel off from the wafer. According to the support jig of the present invention, since the wafer can be supported without using a tape, the wafer processing can be performed in a state where the tape is not attached to the wafer. Therefore, it is possible to avoid the occurrence of the above event due to the tape being stuck on the wafer.
The support jig of the present invention can be used not only for supporting a wafer without a tape, but also for supporting a wafer with a tape.
[0013]
The step of performing wafer processing on the wafer set on the support jig can be performed by stacking a plurality of support jigs on which the wafer is set. As described above, the support jig having the structure in which the groove extending from the outer periphery to the opening is provided is particularly suitable for the manufacturing method in which the support jigs are stacked to perform wafer processing.
[0014]
The manufacturing method of the present invention is particularly preferably applied to the manufacture of a semiconductor element in which wafer processing is performed on both surfaces (typically, circuit patterns are formed on both surfaces). In manufacturing such a semiconductor element, at least one surface of the wafer is subjected to wafer processing after the wafer is thinned. Therefore, the effect of the present invention that the wafer processing can be performed while the thin wafer is supported in a state with less warpage (while being set on the support jig) is well exhibited.
[0015]
A preferred embodiment of a method for manufacturing a semiconductor element having a wafer processed on both sides includes a step of performing wafer processing on the front side surface (front side surface) of the wafer. Further, it includes a step of reducing the thickness of the wafer (for example, performing back grinding). In addition, the method includes a step of setting the wafer having a reduced thickness on any of the above-described wafer support jigs so that at least the back surface (back side surface) of the wafer is exposed from the opening of the support jig. Furthermore, a process of performing wafer processing on the exposed back side surface is included. As a semiconductor element preferably manufactured by such a method, a semiconductor element (typically an electrode semiconductor element) having a back electrode such as an IGBT (Insulated Gate Bipolar Transistor) and a power MOS is exemplified.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
The present invention is also characterized by being implemented in the following forms.
[0017]
(Form 1)
The cylindrical surface rising from the outer peripheral end of the first support surface includes a small diameter cylindrical surface continuous to the first support surface and a large diameter cylindrical surface provided on the side farther from the first support surface than the small diameter cylindrical surface. It has a stepped cylindrical shape. When setting the wafer, the wafer is accommodated inside the small diameter cylindrical surface. In addition, the second support member is locked to an annular locking surface formed between the large diameter cylindrical surface and the small diameter cylindrical surface. By setting it as this shape, the minimum space | interval of a 1st support surface and a 2nd support surface is decided. Accordingly, the effect of preventing wafer damage is further enhanced. For example, even when the outer peripheral portion of the support jig on which the wafer is set is pressed in the thickness direction of the wafer, the pressing force is prevented from being directly transmitted to the wafer sandwiched therebetween. This is advantageous when, for example, a support jig on which a wafer is set is transported while being sandwiched in the wafer thickness direction by a transport arm or the like.
[0018]
(Form 2)
The groove extending from the outer periphery of the support jig to the opening extends along the radial direction of the support jig. In this case, the effect of spreading the fluid to the exposed surface of the wafer through the groove is exhibited well by reducing the length of the groove and reducing the flow resistance of the fluid flowing in the groove. For example, it is preferable to provide a groove extending radially through the annular portion on the end surface of the annular first support member.
The number of grooves is preferably 2 or more, preferably 4 to 12, and particularly preferably 6 or 8. The plurality of grooves may be provided at substantially equal intervals with respect to the circumferential direction of the support jig (so that the central angles formed between adjacent grooves are substantially equal).
[0019]
(Form 3)
The first support member and the second support member are preferably mainly composed of a material that can withstand high temperatures and / or high vacuums. Examples of materials preferably used include metals (aluminum, stainless steel, etc.) and ceramics (alumina, zirconia, silicon nitride, etc.). In general, ceramic has a thermal expansion coefficient close to that of a wafer, and thus is suitable as a constituent material of a support jig.
[0020]
(Form 4)
A preferable application target of the support jig and the manufacturing method of the present invention is a wafer having a thickness of about 10 to 200 μm, and more preferably a wafer having a thickness of 25 to 150 μm. It is also preferably applied to wafers having a diameter exceeding 6 inches (typically in the range of about 15-30 cm), with a more preferred application being 8 inches (about 20 cm) in diameter. (Typically in the range of about 20-30 cm in diameter). Thus, since the thin and / or large diameter wafer is likely to be warped, the effect of applying the present invention is exhibited well.
[0021]
【Example】
Hereinafter, preferred embodiments of the present invention will be described in detail.
<First Example>
A wafer support jig according to an embodiment of the present invention is shown in FIGS.
As shown in FIGS. 1 and 2, the support jig 1 includes an annular (ring-shaped) first support member 10 and an annular (ring-shaped) second support member 30. The wafer 2 is set and used between the support member 10 and the second support member 30. Both surfaces (front side surface 2 a and back side surface 2 b) of the set wafer 2 are exposed from the opening 50 formed on the inner peripheral side of the support jig 1. Both the first support member 10 and the second support member 30 are mainly composed of a ceramic material (here, alumina is used).
[0022]
The shape of the first support member 10 viewed from the front side (upper side in FIG. 2; the side on which the second support member 30 is disposed) is shown in FIG. 3, and the shape viewed from the back side is shown in FIG. 5 and 6 are cross-sectional views of the first support member 10 taken along lines VV and VI-VI shown in FIG. 3, respectively.
5 and 6, the wafer 2 is placed on the first support member 10 in order from the back side (the lower side in FIG. 2; the side opposite to the side on which the second support member 30 is disposed). A placement portion 12 to be placed, a holding portion 14 surrounding the outside of the wafer 2, and a fitting portion 16 into which the second support member 30 is fitted are provided. As well shown in FIG. 3, the placement part 12, the holding part 14, and the fitting part 16 are formed in an annular shape that is coaxial and has the same outer diameter. The inner diameter is enlarged in the order of the placing portion 12, the holding portion 14, and the fitting portion 16. As shown in FIGS. 2 and 3, an annular first support surface 52 that faces the back side surface 2 b of the wafer 2 is formed by the front side surface of the mounting portion 12. Further, a stepped cylindrical surface 54 that continues to the outer peripheral end of the first support surface 52 (rises from the outer peripheral end) is formed by the inner peripheral wall surfaces of the holding portion 14 and the fitting portion 16. This stepped cylindrical surface 54 Includes a first cylindrical surface 54 a corresponding to the inner peripheral wall surface of the holding portion 14 and a second cylindrical surface 54 b corresponding to the inner peripheral wall surface of the fitting portion 16. An annular locking surface 54c is formed between the first cylindrical surface 54a and the second cylindrical surface 54b due to the difference in their inner diameters.
[0023]
As shown in FIG. 4, eight grooves 20 extending in the radial direction of the first support member 10 (penetrating the mounting portion 12 in the radial direction) are provided at 45 ° intervals on the rear side end surface of the first support member 10. Is provided. The depth of each groove 20 is equal to the thickness of the mounting portion 12. Therefore, as shown in FIG. 3, the annular first support surface 52 is divided into a plurality of (here, eight) arc-shaped portions. The first support member 10 may be designed such that the depth of the groove 20 is shallower than the thickness of the mounting portion 12 and the first support surface 52 is a closed ring (a ring that is not divided).
[0024]
The shape of the second support member 30 is shown in FIGS. The second support member 30 includes an annular portion 32 and four claw portions 34 that protrude outward from the lower peripheral portion of the annular portion 32. As shown in FIG. 7, these claw portions 34 are provided at 90 ° intervals. As shown in FIG. 8, the claw portion 34 is thinner than the annular portion 32. As shown in FIGS. 3, 5, and 6, the fitting portion 16 of the first support member 10 has hooks that can be engaged with the claw portions 34 shown in FIG. 7 at four locations in the circumferential direction. 18 are provided at intervals of 90 °.
As shown in FIG. 2, the inner diameter of the annular portion 32 of the second support member 30 is equal to the inner diameter of the mounting portion 12 of the first support member 10. The outer diameter of the annular portion 32 is equivalent to the inner diameter of the fitting portion 16 of the first support member 10, and the thickness thereof is equivalent to the thickness of the fitting portion 16. An annular second support surface 56 that faces the front side surface 2 a of the wafer 2 is formed by the lower surface of the annular portion 32. The second support surface 56 is also opposed to the first support surface 52 provided on the first support member 10.
[0025]
The operation of setting the wafer 2 on the support jig 1 will be described with reference to FIGS. First, as shown in FIG. 2, the wafer 2 is placed on the placement portion 12 of the first support member 10 so that the back side surface 2 b and the first support surface 52 face each other. Here, the shape of the first support member 10 is determined such that the thickness of the holding portion 14 is equal to or slightly larger (for example, about 0.1 to 10%) than the thickness of the wafer 2 to be supported. It has been. Further, the inner diameter of the holding portion 14 is determined to be equal to or slightly larger (for example, about 0.1 to 5%) than the diameter of the wafer 2. Next, as shown in FIG. 1, the opening portion of the collar portion 18 and the claw portion 34 are aligned, and the annular portion 32 is fitted into the fitting portion 16 (inside the second cylindrical surface 54 b). At this time, as shown in FIG. 2, the annular portion 32 is locked on the locking surface 54c. When the second support member 30 is rotated in the right direction in FIG. 1, the flange portion 18 and the claw portion 34 are engaged, and the first support member 10 and the second support member 30 are fixed. In this way, the outer edge portion of the wafer 2 is sandwiched in the thickness direction by the first support surface 54 and the second support surface 56. As shown in FIG. 2, the front side surface 2 a and the back side surface 2 b of the wafer 2 are exposed from an opening 50 formed on the inner peripheral side of the support jig 1.
[0026]
An example of a method for manufacturing a semiconductor element having a circuit pattern on both surfaces using the wafer support jig 1 having such a configuration will be described with reference to FIGS. In these drawings, the support jig 1 is shown as a cross-sectional view corresponding to a cross section taken along line II-II in FIG.
First, as shown in FIG. 9, a surface circuit pattern 2c is formed by performing wafer processing on one side (front side) 2a of a wafer 2 having a diameter of 8 inches and a thickness of about 700 μm. Next, as shown in FIG. 10, a protective tape 42 is affixed onto the front side surface 2a (circuit pattern 2c) of the wafer 2, and the rear surface (the side opposite to the front side surface 2a) of the wafer 2 is formed to have a desired thickness. Backgrinding is performed (until the back side surface 2b indicated by the phantom line in FIG. 10 appears). Thereby, as shown in FIG. 11, the thickness of the wafer 2 is reduced to about 50 μm. Thus, wafer processing is performed on the front side surface 2a (a circuit pattern 2c is formed), and the thin wafer 2 with the tape 42 attached to the front side surface 2a is facilitated.
[0027]
The wafer 2 to which the tape 42 is thus attached is set on the support jig 1 shown in FIG. This setting process is performed using an adsorption stage 60 as shown in FIG. The suction stage 60 is formed with an annular groove 62 having a shape corresponding to the placement portion 12 shown in FIG. As shown in FIG. 13, the suction stage 60 is operated, and the mounting portion 12 is fitted into the annular groove 62 so that the first support member 10 is sucked to the suction stage 60. At this time, the shape (depth) of the annular groove 62 may be determined so that the upper surface of the suction stage 60 (the surface surrounded by the annular groove 62) and the first support surface 52 are substantially in the same plane.
[0028]
As shown in FIG. 14, the wafer 2 to which the tape 42 is attached is transferred to the suction stage 60. The wafer 2 is placed on the first support surface 52 (inside the first cylindrical surface 54a) so that the back side surface 2b (the surface generated by back grinding) is directed to the first support surface 52 side (the suction stage 60 side). Placed on. The wafer 2 exposed from the inner peripheral side of the first support member 10 is sucked to the suction stage 60. In this state, as shown in FIG. 15, the tape 42 is peeled from the front side surface 2 a of the wafer 2. The tape 42 can be peeled by a conventional method. In this manner, the tape 42 is attached to the wafer 2 and handled until the setting to the support jig 1 is started, so that the previous process (back grinding process, wafer 2 is transported to the suction stage 60. Steps and the like can be performed in the same manner as in the past.
[0029]
Subsequently, with the wafer 2 adsorbed on the adsorption stage 60, as shown in FIG. 16, the second support member 30 is disposed from above the first support member 10, and the second support member 30 is rotated as described above. And fix. In this way, by disposing the second support member 30 in a state where the wafer 2 is attracted to the suction stage 60, even when the wafer 2 is warped, it is set on the support jig 1 while correcting the warp. be able to.
Thereafter, the operation of the suction stage 60 is stopped, and the wafer 2 set on the support jig 1 is transferred together with the support jig 1 to a subsequent wafer processing step (for example, a step of forming a back electrode). The wafer 2 can be transferred by, for example, adsorbing and fixing the support jig 1 to a transfer device (such as a transfer arm).
[0030]
The process (etching process, heat treatment, etc.) of the back side surface 2b of the wafer 2 can be performed by stacking a plurality of support jigs 1 on which the wafer 2 is set, as shown in FIG. In FIG. 17, the support jig 1 on which the wafer 2 is set is arranged upside down from FIG. At this time, a groove 20 extending from the outer periphery to the inner periphery (opening) of the support jig 1 is formed on the back surface of the first support member 10 (upper side in FIG. 17), which is indicated by an arrow G in the drawing. As described above, the gas, the chemical solution, and the like in the processing apparatus can be well distributed to the wafer 2. Moreover, since the wafer 2 is supported by the support jig 1 without warping, the back side surface 2b of the wafer 2 can be processed uniformly. In this way, the back circuit pattern (back electrode etc.) 2d is formed on the back side surface 2b of the wafer 2. Note that the tape 42 (see FIG. 15) attached to the wafer 2 has been removed from the wafer 2 before the start of the wafer processing step. Therefore, even when the wafer processing step is performed under high temperature and / or high vacuum conditions, gas is not generated from the tape 42 and the tape 42 is not easily peeled off from the wafer 2.
[0031]
Next, a process of removing the wafer 2 from the support jig 1 and a process of attaching a dicing tape to the removed wafer 2 will be described. These steps are performed using a sticking table 70 shown in FIG. The sticking base 70 has an opening 72, and an annular suction stage 74 is provided around the opening 72. The width of the suction stage 74 is equal to the width of the annular portion 32 of the second support member 30 shown in FIG. In addition, an annular groove 76 having a shape corresponding to the fitting portion 16 of the first support member 10 is provided outside the suction stage 74.
[0032]
The suction stage 74 is actuated, and as shown in FIG. 19, the wafer 2 that has finished the wafer processing step is transferred to the sticking table 70 together with the support jig 1. When the support jig 1 is set on the sticking table 70 side with the front surface 2a of the wafer 2 facing down, the fitting portion 16 is fitted into the annular groove 76, and the annular portion 32 of the second support member 30 is attached to the suction stage. 72 is adsorbed. Next, the first support member 10 is rotated to release the engagement with the second support member 30. With the suction stage 74 still operating, the first support member 10 (see FIG. 19) is removed from the affixing base 70, leaving the second support member 30 and the wafer 2 as shown in FIG.
As shown in FIGS. 21 and 22, the dicing ring 78 to which the dicing tape 80 is attached is disposed on the attaching table 70 so as to surround the wafer 2, and the wafer 2 is attached to the dicing tape 80. Then, as shown in FIG. 23, the wafer 2 is transferred to the next process (dicing process or the like) together with the dicing tape 80 and the dicing ring 78. Thereafter, the operation of the suction stage 74 is stopped, and the second support member 30 is removed from the suction stage 74 as shown in FIG.
[0033]
In the present embodiment, the shape of the second support member 30 is an annular shape, but a disk-like second support member (for example, a shape in which the central portion of the annular portion 32 is closed in FIG. 7) can also be used.
[0034]
<Second Example>
The second embodiment is an example in which the shape and material of the support jig are different from the first embodiment. Hereinafter, members having the same functions as those according to the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
As shown in FIGS. 25 and 26, the support jig 3 according to the present embodiment includes an annular first support member 10 and an annular second support member 30. Both the first support member 10 and the second support member 30 are made of a magnetic material (for example, an alnico magnet made by casting an alloy obtained by adding Al, Ni, Co to iron). In the present embodiment, an attractive force due to magnetic force acts between the second support member 30 and the first support member 10 that are fitted into the fitting portion 16. As a result, the outer edge portion of the wafer 2 is sandwiched between the first support surface 54 and the second support surface 56. Thus, the configuration in which the first support member 10 and the second support member 30 are fixed by magnetic force is preferable because the shape of the support jig 3 can be simplified.
In the present embodiment, the first support member 10 having a shape in which the groove 20 (see FIG. 4) is not formed on the back surface is used. However, the first support in which the groove 20 is formed as in the first embodiment. The member 10 may be used.
[0035]
<Third embodiment>
The third embodiment is another example in which the shape and material of the support jig are different from those of the first embodiment.
As shown in FIGS. 27 and 28, the support jig 4 according to the present embodiment includes an annular first support member 10 and an annular second support member 30, which are locked by four stoppers 90 ( (Fixed). The first support member 10, the second support member 30, and the stopper 90 are all formed mainly of a ceramic material (here, alumina is used).
FIG. 29 shows the shape of the first support member 10 according to the third embodiment as viewed from the front side, and FIG. 30 shows the shape of the first support member 10 as viewed from the back side. As shown in FIG. 30, eight grooves 20 extending in the radial direction are provided on the back side end surface of the first support member 10, as in the first embodiment. However, in the present embodiment, as shown in FIG. 28, the depth of these grooves 20 is shallower than the thickness of the mounting portion 12.
[0036]
A shape of the second support member 30 according to the third embodiment as viewed from the front side is shown in FIG. The annular portion 32 constituting the second support member 30 has an inner peripheral portion 32a and an outer peripheral portion 32b provided concentrically. As shown in FIG. 28, the outer peripheral portion 32b is formed thinner than the inner peripheral portion 32a. The thickness of the outer peripheral portion 32 b is equal to the thickness of the fitting portion 16 of the first support member 10.
A sectional view of the stopper 90 is shown in FIG. 32, and a shape of the stopper 90 viewed from the rear side (the outer peripheral side when the stopper 90 constitutes the support jig 4) is shown in FIG. As shown in the drawing, the stopper 90 has a U-shaped (substantially U-shaped) cross section.
[0037]
As shown in FIG. 28, the wafer 2 is placed on the first support surface 52, and the second support member 30 is disposed thereon. In the state where the first support member 10 and the second support member 30 are overlapped in this way, the four stoppers 90 are inserted from the outer peripheral side according to the position of the groove 20. As a result, the first support member 10 and the second support member 30 are fixed, and the wafer 2 is sandwiched between the first support surface 52 and the second support surface 56 in an annular shape.
[0038]
The technical scope disclosed by this specification includes the following.
(1) A semiconductor element manufacturing method including a step of transporting a wafer set on any wafer support jig of the present invention.
(2) A semiconductor element manufacturing method including a step of performing wafer processing on a wafer set on any wafer support jig of the present invention.
[0039]
Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above.
In addition, the technical elements described in the present specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology illustrated in the present specification or the drawings achieves a plurality of objects at the same time, and has technical utility by achieving one of the objects.
[Brief description of the drawings]
FIG. 1 is a plan view showing a support jig of a first embodiment.
FIG. 2 is a cross-sectional view taken along the line II-II in FIG.
FIG. 3 is a plan view showing a first support member constituting the support jig of the first embodiment.
FIG. 4 is a bottom view showing a first support member constituting the support jig of the first embodiment.
5 is a cross-sectional view taken along line VV in FIG.
6 is a cross-sectional view taken along line VI-VI in FIG.
FIG. 7 is a plan view showing a second support member constituting the support jig of the first embodiment.
8 is a cross-sectional view taken along line VIII-VIII in FIG.
FIG. 9 is a cross-sectional view showing a state in which a circuit pattern is formed on the front side surface of the wafer.
FIG. 10 is a cross-sectional view showing a state where a protective tape is attached to the front side surface of the wafer.
FIG. 11 is a cross-sectional view showing a back-ground wafer.
FIG. 12 is a cross-sectional view showing an adsorption stage used for manufacturing a semiconductor element.
FIG. 13 is a cross-sectional view showing a state where the first support member is arranged on the suction stage.
FIG. 14 is a cross-sectional view showing a state where a wafer is placed on a first support member.
FIG. 15 is a cross-sectional view showing how the protective tape is removed from the wafer.
FIG. 16 is a cross-sectional view showing a state in which a second support member is arranged.
FIG. 17 is a cross-sectional view showing a process of performing wafer processing by stacking support jigs on which wafers are set.
FIG. 18 is a cross-sectional view showing a sticking base used for manufacturing a semiconductor element.
FIG. 19 is a cross-sectional view showing a state in which a supporting jig on which a wafer is set is arranged on a sticking table.
FIG. 20 is a cross-sectional view showing a state where the first support member is removed.
FIG. 21 is a cross-sectional view showing a state in which a dicing ring to which a dicing tape is attached is arranged on a sticking table.
FIG. 22 is a cross-sectional view showing a state where a wafer is attached to a dicing tape.
FIG. 23 is a cross-sectional view showing a state in which a wafer attached to a dicing tape is transferred to the next process.
FIG. 24 is a cross-sectional view showing a process of removing the second support member from the sticking table.
FIG. 25 is a plan view showing a support jig of a second embodiment.
26 is a cross-sectional view taken along line XXVI-XXVI in FIG.
FIG. 27 is a plan view showing a support jig of a third embodiment.
FIG. 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG.
FIG. 29 is a plan view showing a first support member constituting a support jig of a third embodiment.
FIG. 30 is a bottom view showing a first support member constituting a support jig of a third embodiment.
FIG. 31 is a plan view showing a second support member constituting the support jig of the third embodiment.
FIG. 32 is a cross-sectional view showing a stopper constituting the support jig of the third embodiment.
33 is a view on arrow XXXIII in FIG. 32;
[Explanation of symbols]
1, 3, 4: Support jig
2: Wafer
2a: Front side
2b: Back side
10: First support member
20: Groove
30: Second support member
32: Annular part
42: protective tape (tape)
50: opening
52: First support surface
54: Stepped cylindrical surface (tubular surface)
54a: first cylinder surface (small diameter cylinder surface)
54b: Second cylindrical surface (large-diameter cylindrical surface)
56: Second support surface
90: Stopper

Claims (7)

An annular first support member having an annular first support surface and a stepped cylindrical surface rising from the outer peripheral end of the first support surface;
An annular second support member having a second support surface facing the first support surface;
The stepped cylindrical surface is provided on the first cylindrical surface continuous with the first supporting surface, and on the side farther from the first supporting surface than the first cylindrical surface, and has an inner diameter than the first cylindrical surface. A large second cylindrical surface and an annular surface formed between the first cylindrical surface and the second cylindrical surface;
A wafer can be accommodated inside the first cylindrical surface, and the second support member can be accommodated inside the second cylindrical surface,
When set the wafer, said second supporting surface is engaged on the annular surface, the periphery of the wafer by the first supporting surface and said second supporting surface is held in the thickness direction, the first support member And a wafer support jig configured to expose both surfaces of the wafer from an opening formed on the inner peripheral side of the second support member .   The wafer support jig according to claim 1, wherein a groove extending from an outer periphery of the support jig to the opening is provided. Setting a wafer on the wafer support jig according to claim 1 or 2 ,
Semiconductor device manufacturing method including a step of subjecting the wafer processing in a wafer that is exposed from the opening of the support jig. The method of manufacturing a semiconductor device according to claim 3 , wherein the step of performing the wafer processing is performed in a state where no tape is attached to the wafer. 5. The method of manufacturing a semiconductor device according to claim 3, wherein the step of performing the wafer processing is a step of forming an electrode. The semiconductor element manufacturing method according to claim 3, wherein the wafer processing step is performed by stacking a plurality of support jigs on which a wafer is set. A process of performing wafer processing on the front side of the wafer;
Reducing the thickness of the wafer;
Setting the wafer having a reduced thickness to the wafer support jig according to claim 1 or 2 so that at least the back side of the wafer is exposed from the opening of the support jig;
And a step of performing wafer processing on the exposed back surface side.

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