JP4090743B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4090743B2
JP4090743B2 JP2002009228A JP2002009228A JP4090743B2 JP 4090743 B2 JP4090743 B2 JP 4090743B2 JP 2002009228 A JP2002009228 A JP 2002009228A JP 2002009228 A JP2002009228 A JP 2002009228A JP 4090743 B2 JP4090743 B2 JP 4090743B2
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JP
Japan
Prior art keywords
insulating film
light
film
emitting device
anode
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Expired - Fee Related
Application number
JP2002009228A
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English (en)
Japanese (ja)
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JP2002319495A (ja
JP2002319495A5 (https=
Inventor
裕和 山形
寿雄 池田
祥美 足立
徳子 宮城
幸治 小野
達也 荒尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002009228A priority Critical patent/JP4090743B2/ja
Publication of JP2002319495A publication Critical patent/JP2002319495A/ja
Publication of JP2002319495A5 publication Critical patent/JP2002319495A5/ja
Application granted granted Critical
Publication of JP4090743B2 publication Critical patent/JP4090743B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2002009228A 2001-01-18 2002-01-17 発光装置の作製方法 Expired - Fee Related JP4090743B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002009228A JP4090743B2 (ja) 2001-01-18 2002-01-17 発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-10735 2001-01-18
JP2001010735 2001-01-18
JP2002009228A JP4090743B2 (ja) 2001-01-18 2002-01-17 発光装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005037917A Division JP2005196225A (ja) 2001-01-18 2005-02-15 発光装置及び発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002319495A JP2002319495A (ja) 2002-10-31
JP2002319495A5 JP2002319495A5 (https=) 2005-08-04
JP4090743B2 true JP4090743B2 (ja) 2008-05-28

Family

ID=26607915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002009228A Expired - Fee Related JP4090743B2 (ja) 2001-01-18 2002-01-17 発光装置の作製方法

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JP (1) JP4090743B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7825021B2 (en) 2004-01-16 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP4884674B2 (ja) * 2004-01-16 2012-02-29 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5153058B2 (ja) * 2005-02-25 2013-02-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5103607B2 (ja) * 2005-11-04 2012-12-19 国立大学法人東京農工大学 剥離層除去方法
JP5486920B2 (ja) * 2009-12-25 2014-05-07 株式会社ジャパンディスプレイ 有機ｅｌ装置及びその製造方法
CN111886699B (zh) * 2018-03-28 2024-06-14 堺显示器制品株式会社 有机el显示装置及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2682188B2 (ja) * 1990-03-09 1997-11-26 富士電機株式会社 電子写真用感光体の製造方法
JPH0487187A (ja) * 1990-07-27 1992-03-19 Toshiba Corp 有機エレクトロルミネッセンス素子
JPH08120105A (ja) * 1994-10-26 1996-05-14 Kanebo Ltd ポリビニルアルコール系多孔質シートの製造方法
JP3497283B2 (ja) * 1995-06-19 2004-02-16 松下電器産業株式会社 有機薄膜ｅｌ素子
US6569544B1 (en) * 1997-07-31 2003-05-27 Ecole Polytechnique Federale De Lausanne Electroluminescent device
JP2000106279A (ja) * 1998-09-28 2000-04-11 Matsushita Electric Ind Co Ltd 有機薄膜ｅｌ素子
JP2000164347A (ja) * 1998-11-30 2000-06-16 Canon Inc 表示装置及びその製造方法
JP2000260572A (ja) * 1999-03-04 2000-09-22 Sumitomo Electric Ind Ltd 有機エレクトロルミネッセンスパネル
JP4627822B2 (ja) * 1999-06-23 2011-02-09 株式会社半導体エネルギー研究所 表示装置
JP4581187B2 (ja) * 2000-06-13 2010-11-17 ソニー株式会社 表示装置の製造方法

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Publication number Publication date
JP2002319495A (ja) 2002-10-31

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