JP4073830B2 - Manufacturing method of semiconductor chip built-in module - Google Patents

Description

【０１０７】
これらの成分を秤量し、攪拌混練機で混合して硬化性組成物を調製した。その後、この硬化性組成物を押出成形機で厚さ約５００μｍのシート状に加工した。この樹脂組成物の粘度をＥ型粘度計（英弘精機（株）製、測定条件：剪断速度５／sec）で昇温させながら測定したところ、５０℃で約５０Ｐａ・ｓ、１１０℃で約８００００Ｐａ・ｓであった。
【０１０８】
半導体チップを実装した配線パターンを有するキャリア銅箔を金型にセットし、その上に上述の未硬化状態の硬化性組成物のシートを載置した。金型を７０℃に加熱して３ＭＰａの圧力で加圧した。保持時間は１５分であった。これによって、図２（ｄ）に示すように半導体チップ２０３を硬化性組成物２０４に埋設っすると共に、硬化性組成物中の熱可塑性樹脂粉末に液状成分を吸収させ膨潤させることにより硬化性組成物の粘度を上昇させて非可逆的に固形化した。
【０１０９】
次いで、図３（ｂ）に示すように，隣り合う半導体チップの中間に離型キャリアを残して固形化した硬化性組成物に対して分割線を形成した。分割線は、金型に硬化性組成物と一体となったキャリア銅箔をセットしたままの状態で、その上方から格子状に刃を形成した金型を位置合わせし、５ＭＰａの圧力で押圧することにより行った。
【０１１０】
その後、加圧オーブン装置を用い、１ＭＰａの圧力で加圧しながら１７０℃で２時間加熱して硬化性組成物中のエポキシ樹脂を硬化させた。次に、全面に無電界めっきにより，厚さ約５μｍのＮｉ−Ｐめっきを施して図４（ｂ）に示すようなシールド層４０５を形成した。最後に，離型キャリアを剥離除去し，図４（ｄ）に示すような半導体チップ内蔵モジュールを完成させた。
【０１１１】
（比較例１）
比較例として、熱可塑性樹脂を使用せず、熱硬化性樹脂の量を８．５質量部としたこと以外は、実施例１と同様にして硬化性組成物を調製した。これ用いて上記と同様に半導体チップ内蔵モジュールを作製した。但し、本比較例は、熱可塑性樹脂粉末を含まないため、以下のような作製方法とした。金型に半導体チップを実装した配線パターンを有するキャリア銅箔をセットし、その上に上述の未硬化状態の硬化性組成物のシートを載置した。金型を７０℃に加熱して３ＭＰａの圧力で１５分保持した。これを、加圧オーブン装置を用い、１ＭＰａの圧力で加圧しながら１７０℃で２時間加熱して硬化させた。次に、ルータ加工により分割を行った。
【０１１２】
その後、全面に無電界めっきによってＣｕめっきを行い、更に、その上に電解Ｃｕめっき、電解Ｓｎめっきを施して図４（ｂ）に示すようなシールド層４０５を形成した。最後に、離型キャリアを剥離除去して図４（ｄ）に示すような半導体チップ内蔵モジュールを完成させた。
【０１１３】
（比較例２）
比較例として、熱可塑性樹脂を使用せず、無機フィラーの量を９３質量部としたこと以外は、実施例１と同様にして硬化性組成物を調製した。これ用いて比較例１と同様に半導体チップ内蔵モジュールを作製した。
【０１１４】
上述の実施例および比較例の半導体チップ内蔵モジュールについて、外観観察ならびに超音波探傷装置を用いて硬化組成物と半導体チップまたは配線パターンとの界面におけるボイドの有無を観察して成形性を評価した。
【０１１５】
また、硬化性組成物のみを、上述の半導体モジュール作製と同様にして硬化させ、その曲げ強度を評価した。曲げ強度の評価はＪＩＳ Ｒ−１６０１に規定された方法で評価した。評価方法は、一定寸法に加工したシート材料を試験片とし、一定距離に配置された２支点上に置き，支点間の中央の１点に荷重を加えて折れたときの最大曲げ応力を計測することで求められる。３点曲げ強さとも呼ばれる。
【０１１６】
上述の評価結果を以下に示す：
【表１】

尚、「ボイド」とは絶縁層、特に半導体チップとの境界部に存在する比較的小さな空隙部であり、「埋まり不良」とは、ボイドが多数集まって一体化した比較的大きな空隙部である。
【０１１７】
この結果から、本発明に基づく実施例１の半導体パッケージは成形性が良好であり、また、曲げ強度も高いものであることが解る。
【０１１８】
また、実施例１の半導体チップ内蔵モジュールの信頼性の評価として、半田リフロー試験および温度サイクル試験を行った。半田リフロー試験はベルト式リフロー炉を用い、最高温度が２６０℃で３０秒保持される温度履歴のリフローを３回通過させることで行った。温度サイクル試験は、低温側として−５５℃で３０分、高温側として１２５℃で３０分それぞれ保持することを１サイクルとし、これを３００サイクル行った。
【０１１９】
いずれの場合も、試験後、半導体チップ内蔵モジュールにおいてクラックは認められず，また，超音波探傷装置による観察においても，内蔵した半導体チップにクラックは認められなかった。従って、本発明に基づく半導体チップ内蔵モジュールは高信頼であることが解った。
【０１２０】
（実施例２）
図６と同様な構造を有する半導体チップ内蔵モジュールを以下の要領で作製した。
まず、配線パターンが両側に形成されたガラスエポキシからなるプリント配線基板（Ｒ−１７６６Ｔ、松下電工製）（厚み２００μｍ）を準備した。次に、実施例１と同じ半導体チップを同様の方法でフリップチップ実装した。
【０１２１】
次いで、半導体チップを実装した配線パターンを有する配線基板に、未硬化状態でシート状の硬化性組成物を重ね、加熱加圧することにより、半導体チップを硬化性組成物に埋設するとともに、硬化性組成物を固形化させた。
【０１２２】
硬化性組成物の組成を以下に示す：

【０１２３】
これらの成分を秤量し、攪拌混練機で混合して硬化性組成物を調製した。その後、この硬化性組成物を押出成形機で厚さ約５００μｍのシート状に加工した。半導体チップを実装した配線パターンを有するプリント配線基板を金型にセットし、その上に上述の未硬化状態の硬化性組成物のシートを載置した。金型を７０℃に加熱して３ＭＰａの圧力で加圧した。保持時間は１５分であった。これによって、半導体チップ２０３を硬化性組成物２０４に埋設っすると共に、硬化性組成物中の熱可塑性樹脂粉末に液状成分を吸収させ膨潤させることにより硬化性組成物の粘度を上昇させて非可逆的に固形化した。
【０１２４】
次いで、固形化した硬化性組成物とともに半導体チップをその背面側から研磨した。研磨は通常の研磨剤（遊離砥粒）を用いたラッピングマシンを用い、半導体チップの厚さが１００μｍになるまで研磨した。研磨後、洗浄を行った。次に、固形化した硬化性組成物の所望の位置に、プリント配線基板まで達する分割線を形成した。分割線の形成方法は実施例１と同様である。
【０１２５】
これを、加圧オーブン装置を用いて、１ＭＰａの圧力で加圧しながら１７０℃で２時間加熱して硬化性組成物中のエポキシ樹脂を硬化させた。次に，図６（ｂ）に示すように、分割線に沿ってルータ加工によりプリント配線板を切断した。これにより，図６（ｃ）に示すような薄型のインターポーザとしての回路基板を備えた半導体チップ内蔵モジュールを完成させた。
【０１２６】
この半導体チップ内蔵モジュールの信頼性の評価として、上述の半田リフロー試験および温度サイクル試験を行った。その結果， 試験後，半導体チップ内蔵モジュールにおいてクラックは発生せず、また、超音波探傷装置による観察においても，内蔵した半導体チップにクラックは認められなかった。従って、本発明に基づく半導体チップ内蔵モジュールは高信頼であることが分かった。
【０１２７】
【発明の効果】
以上説明したように、本発明により得られる半導体チップ内蔵モジュールは、熱硬化性樹脂（Ａ）と、熱可塑性樹脂（Ｂ）と、潜在性硬化剤（Ｃ）及び無機フィラー（Ｄ）とを含む硬化組成物である絶縁層と、配線パターンと、前記絶縁層の内部に配置し前記配線パターンに実装された半導体チップとを備えたことを特徴とする。
【０１２８】
そのような本発明によれば、半導体チップを埋設する絶縁層を構成する硬化性組成物が曲げ強度に優れるため、半導体チップ内蔵モジュールが薄型化するほど発生し易くなるリフロークラックを効果的に防止することができる。また、機械的強度も優れており、ハンドリング時や実装時に加わる外的応力、実装後に半導体パッケージと実装した基板の熱膨張の差に起因する熱応力に対して強い半導体チップ内蔵モジュールであり、半導体チップが破壊されることはない構造となる。
【０１２９】
また、本発明において用いる上述の硬化性組成物は，潜在性硬化剤の活性化温度未満の熱処理で熱可塑性樹脂が液状成分を吸収することに起因する急峻な第１次粘度上昇と、潜在性硬化剤の活性温度以上で硬化反応が急激に進行することに起因する急峻な第２次粘度上昇を有する。この特性により、本発明による半導体チップ内蔵モジュールの製造方法は、前記半導体チップを硬化性組成物で埋設後、未硬化状態で研磨を加工を行うことで、極薄の半導体チップ内蔵モジュールを提供できるものである。更に、複数の半導体チップ内蔵モジュールに一括でシールド層を形成でき，高周波特性にすぐれた半導体チップ内蔵モジュールを容易に実現できるものである。
【図面の簡単な説明】
【図１】 本発明の半導体チップ内蔵モジュールの一実施の形態を示す模式的断面図である。
【図２】 本発明の一実施の形態における半導体チップ内蔵モジュールの製造方法において硬化性組成物を固形化する工程を示す模式的断面図である。
【図３】 本発明の一実施の形態における半導体チップ内蔵モジュールの製造方法において硬化性組成物に分割線を形成する工程を示す模式的断面図である。
【図４】 本発明の一実施の形態における半導体チップ内蔵モジュールの製造方法において硬化性組成物に硬化して、その後、分割する工程を示す模式的断面図である。
【図５】 本発明の半導体チップ内蔵モジュールの製造方法の別の形態を工程別に示す模式的断面図である。
【図６】 本発明の半導体チップ内蔵モジュールの製造方法の更に別の形態を工程別に示す模式的断面図である。
【図７】 本発明において用いる硬化性組成物の粘度特性を模式的に示すグラフである。
【符号の説明】
１００…半導体チップ内蔵モジュール
１０１，２０１，３０１，４０１，５０１，６０１…配線パターン
１０２，２０２，３０２，４０２，５０２，６０２…半導体チップ
１０３，２０３，３０３，４０３，５０３，６０３…バンプ
１０４，２０４，３０４，４０４，５０４，６０４…硬化性組成物（絶縁層）
１０５，４０５…シールド層
２０６，３０６，４０６，５０６，６０６…離型キャリア
３０５，４０７，５０５，６０５…分割部
３０７，５０７，６０７…分割用工具[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a module incorporating a semiconductor chip, and more particularly to a module capable of being easily reduced in thickness and excellent in reliability and high-frequency characteristics and capable of high-density mounting, and a method for manufacturing such a module.
[0002]
[Prior art]
In recent years, higher density and higher functionality of semiconductor chips have progressed, and the enlargement of semiconductor chips and the increase in the number of electrodes are remarkable. On the other hand, with the demand for higher performance and smaller size of electronic devices, there is a demand for smaller semiconductor packages. For this reason, the semiconductor package has a QFP (Quad Flat Package) type in which leads are arranged around the package, a BGA (Ball Grid Array) type in which electrodes are arranged in an area array on the lower surface, and a CSP that has been further miniaturized. It is shifting to the (Chip Scale Package) type.
[0003]
In these semiconductor packages, various properties are required for a sealing resin composition for resin-sealing a semiconductor chip. In particular, high bending strength is required to prevent reflow cracks that occur when exposed to high temperatures such as solder reflow in a moisture-absorbed state. In order to satisfy this requirement, various proposals for increasing the bending strength by increasing the content of the inorganic filler as the filler contained in the sealing resin composition have been disclosed.
[0004]
For example, by optimizing the particle size distribution of the inorganic filler, there is one that increases the content of the inorganic filler without reducing the fluidity of the sealing resin composition necessary for the sealing step (Patent Document 1). reference). Further, by using a spherical inorganic filler having fine irregularities formed on the surface, there is one that has improved bending strength while making it easy to increase the filling amount without reducing fluidity (Patent Document 2). reference).
[0005]
While the semiconductor package is being downsized by the development of the CSP and the like described above, for example, for a card-sized information terminal or the like, it is desired to make the semiconductor package thinner or lower. In response to this demand, a circuit board for mounting a semiconductor called an interposer used for a semiconductor package is required to be thin, and development of a thin board such as a flexible board has been actively conducted.
[0006]
On the other hand, the semiconductor chip itself is required to be thinned by polishing. However, a semiconductor chip of 100 μm or less has low mechanical strength, and thinning a semiconductor wafer by polishing causes a problem of wafer cracking, and polishing of individual semiconductor chips is more difficult and inefficient. . Furthermore, since the semiconductor chip obtained by thinning has a low mechanical strength, there is a risk of breakage in flip chip mounting, so a load cannot be applied during mounting and handling is difficult.
[0007]
On the other hand, after embedding a semiconductor chip in a resin composition in which an inorganic filler is mixed with a thermosetting resin, a method of thinning the semiconductor package by polishing from the back side of the semiconductor chip to a desired thickness is proposed. (See Patent Document 3).
[0008]
According to this method, since the resin is sealed in the state of a flip chip mounted thick semiconductor chip and then polished, a thin semiconductor package can be obtained without applying mechanical shock to the semiconductor chip, and the semiconductor chip at the time of polishing can be obtained. Contamination can be prevented. Furthermore, by mounting a large number of semiconductor chips and embedding / thinning them, the efficiency is improved as in the case of polishing on a semiconductor wafer, and then the CSP can be easily formed by dividing them.
[0009]
[Patent Document 1]
Japanese Patent Laid-Open No. 06-224328
[Patent Document 2]
Japanese Patent Laid-Open No. 06-224329
[Patent Document 3]
JP-A-2001-332654 (pages 16-17, FIG. 1)
[0010]
[Problems to be solved by the invention]
The semiconductor package in which the resin sealing is performed as described above has the following problems.
As the semiconductor package becomes thinner, the above-mentioned reflow crack is more likely to occur. Furthermore, in semiconductor packages, the thinner the interposer and semiconductor chip, the weaker the mechanical strength, and due to external stress applied during handling and mounting, and the difference in thermal expansion between the semiconductor package and the mounted substrate after mounting. The risk of the semiconductor chip being destroyed increases due to the resulting thermal stress.
[0011]
However, when the resin composition is filled with an inorganic filler for the purpose of improving the bending strength of the resin composition for sealing the semiconductor chip, and thus the semiconductor package itself, it can be filled within a range that does not impair the fluidity of the resin composition. There is a limit to the amount of filler. If a resin composition containing an inorganic filler exceeding the limit amount is used, it is difficult to mold a semiconductor package.
[0012]
On the other hand, in a semiconductor package that has been thinned by polishing after being embedded with a thermosetting resin composition mixed with an inorganic filler after mounting the above-described semiconductor chip, the thinner the semiconductor chip by polishing, the more external force at the time of polishing. In order to protect the semiconductor chip, the mechanical strength of the resin composition is required. In addition, since the inorganic filler in the resin composition is hard in the polishing process for thinning and the process of dividing the edges by processing such as dicing after sealing a plurality of semiconductor chips, a large amount of filler is filled. However, there is a problem that the machining becomes more difficult and the wear of the machining tool during machining is more severe.
[0013]
[Means for Solving the Problems]
An object of the present invention is to provide a module capable of being thinned easily, capable of being thinned easily, and having high reliability and high-frequency characteristics, and a method for manufacturing the same. is there.
[0014]
In the first aspect, the present invention comprises an insulating layer, a wiring pattern, and a semiconductor chip, and the insulating layer has the wiring pattern on one surface thereof, and the semiconductor chip is disposed inside the insulating layer. A semiconductor chip built-in module in which the wiring pattern and the semiconductor chip are electrically connected to each other;
The insulating layer comprises a curable composition comprising (A) a thermosetting resin and (B) a latent curing agent and (c) a thermoplastic resin, and (D) an inorganic filler. It is formed with the hardened | cured hardening composition.
[0015]
In a second aspect, a method for manufacturing a semiconductor chip built-in module as described above is provided, and the method includes:
(1) a step of mounting a semiconductor chip face down on a wiring pattern formed on the surface of a support (that is, electrically connecting);
(2) (A) a thermosetting resin and (B) a latent curing agent and (C) a resin composition containing a thermoplastic resin, and (D) a curable composition containing an inorganic filler. A process of burying chips;
(3) a step of solidifying the curable composition by heat treatment;
(4) a step of further heat-treating the solidified curable composition to cure the curable composition;
Comprising. If necessary, the support may be removed after step (3) or step (4), and a semiconductor chip built-in module having no support can be obtained.
[0016]
In this manufacturing method, when a plurality of modules with built-in semiconductor chips are manufactured substantially simultaneously, the following can be performed:
In the step (1), using a support having a plurality of wiring patterns formed on the surface, a semiconductor chip is mounted on each wiring pattern,
In the step (2), all semiconductor chips are embedded in the curable composition,
After the step (3), before the step (4), the curing is performed so as to define a plurality of semiconductor chip built-in modules each including a predetermined semiconductor chip with the support. Forming a dividing portion (for example, a dividing line) in the thickness direction of the composition,
The above step (4) is performed, and then divided along the divided portion to obtain individual semiconductor chip built-in modules.
It is characterized by that.
[0017]
In the above method, the same wiring pattern may be repeatedly formed on the support in the plurality of wiring patterns, and therefore the semiconductor chips mounted on each wiring pattern may be the same. The dividing portion is formed so as to reach the support from the exposed surface of the curable composition, and the division removes such a support from other portions (that is, the cured composition including the semiconductor chip and the wiring pattern). Can be implemented automatically.
[0018]
In the present invention, a curable composition is used. This curable composition comprises a resin composition comprising a liquid thermosetting resin and a thermoplastic resin, and an inorganic filler contained therein. The thermosetting resin contains a latent curing agent. The thermoplastic resin is preferably powdery at room temperature (usually 25 ° C.) when the thermosetting resin is uncured. Such a curable composition is obtained by homogeneously mixing the components constituting the curable composition. In this case, the composition becomes a clay or paste-like composition and may have a slight stickiness. The thermosetting resin contained in the curable composition is liquid. The latent curing agent contained in the curable composition exhibits a function as a curing agent when a certain temperature is exceeded, and cures the thermosetting resin. Called “temperature”. At temperatures below the activation temperature, the thermosetting resin does not substantially cure.
[0019]
When the curable composition as described above is heated, its viscosity gradually increases. In addition, upon heating, the viscosity may once decrease and then increase. This increase in viscosity originates from the fact that the thermoplastic resin swells by absorbing the surrounding liquid before the heating, and the latent curing agent is activated and heat-cured after the heating. This is thought to be due to the progress of curing of the functional resin. As a result of having such a viscosity characteristic, the curable composition can be handled as a solid substance during the heating, preferably after the viscosity increase in the previous stage is completed (for example, as described later, the semiconductor When the module is manufactured, the dividing line can be formed without substantially adverse effects). That is, although the viscosity can be measured, it appears as if there is no fluidity in appearance (for example, when no external force other than gravity is applied). Such a state is referred to as “solidification” in the present specification. The change to a solidified state by heating is an irreversible change, and once solidified, even if the temperature is lowered, it does not return to a low viscosity as originally possessed by the composition. In this sense, solidification of the curable composition is irreversible solidification.
[0020]
In the process of heating the curable composition, when the temperature of the curable composition reaches the activation temperature of the latent curing agent, the thermosetting resin begins to cure, and then the curing gradually proceeds. Rises further and nears completion of curing or substantially completes it to a substantially solid state. The term “curing” in the term “curable composition” is used to mean that the thermosetting resin is thus cured. In the solidified state, curing may have already progressed, but curing must not be completed. In particular, in a preferred embodiment, curing does not proceed substantially in the solidified state. That is, the latent curing agent is not activated by heating for solidification.
[0021]
The curable composition having the viscosity characteristics as described above can be prepared by appropriately selecting a usable thermosetting resin and latent curing agent exemplified later, and a thermoplastic resin. By variously changing the types and amounts of these components, (a) a composition in which curing is not substantially progressed in a solidified state, and (b) curing is completed in a solidified state, but curing is completed. Composition that has not been reached (so-called C-stage state), (c) curing is progressing in the solidified state, but the progress of curing is in an intermediate state (so-called B-stage state) It is possible to prepare various curable compositions such as a) a composition, and (d) a composition that has been cured in a solidified state but has only a small amount of curing (a so-called A-stage state). it can. The curable compositions of (a), (c) and (d), particularly the curable compositions of (a) and (d) are preferred.
[0022]
An example of the viscosity characteristic of such a curable composition is schematically shown in FIG. In FIG. 7, the vertical axis represents logarithmic viscosity (that is, log (viscosity)), and the horizontal axis represents the temperature of a normal scale. As shown by the solid curve Y in the graph of FIG. 7, when the curable composition of the present invention is heated, its viscosity increases rapidly twice. Once the viscosity has decreased, the first viscosity increase (curve Y1) is exhibited at a temperature lower than the activation temperature (α) of the latent curing agent, and the first increase at a temperature higher than the activation temperature (α) of the latent curing agent. The secondary viscosity increase (curve Y2) is shown. In the method for producing a semiconductor chip built-in module of the present invention, the step of solidifying the curable composition is performed at a temperature at which the curable composition is in a “solidified” state in the above meaning, The solidification may be performed at a temperature between the temperature at which the secondary viscosity increase is substantially finished and the temperature at which the secondary viscosity increase is substantially started. To do.
[0023]
As described above, the first viscosity increase curve Y1 appears because the curable composition contains a thermoplastic resin. That is, as a result of the thermoplastic resin absorbing the liquid component by the heat treatment that is heated to a temperature lower than the activation temperature of the latent curing agent, the viscosity is rapidly increased. Moreover, the expression of the secondary viscosity increase curve Y2 is attributed to the addition of the latent curing agent. That is, when the activation temperature α of the latent curing agent is exceeded, a curing reaction starts, which proceeds rapidly and increases the viscosity.
[0024]
In a preferred embodiment, the activation temperature (α) of the latent curing agent constituting the curable composition is higher than the softening start point of the thermoplastic resin, particularly its softening point, and more preferably lower than the melting point of the thermoplastic resin. When such a temperature relationship exists, the curable composition often has viscosity characteristics as illustrated. In the solidified state, it is possible to ensure that curing has not substantially started.
[0025]
In FIG. 7, curve X represents the temperature-viscosity characteristics of a composition comprising a thermosetting resin and a curing agent (that is, not including a thermoplastic resin). As the temperature rises, the viscosity once decreases due to melting and / or softening of the composition, and then curing proceeds and the viscosity increases monotonously and gradually.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
The module with a built-in semiconductor chip of the present invention is a cured product comprising (A) a thermosetting resin, (B) a latent curing agent, and (c) a thermoplastic resin, and (D) an inorganic filler. An insulating layer formed by curing a cured composition obtained by curing a conductive composition, a wiring pattern, and a semiconductor chip disposed inside the insulating layer and mounted on the wiring pattern.
[0027]
According to the semiconductor chip built-in module of the present invention, since the cured composition constituting the insulating layer in which the semiconductor chip is embedded has excellent bending strength, reflow cracks that are more likely to occur as the semiconductor chip built-in module becomes thinner are effectively prevented. Can be prevented. In addition, the semiconductor chip built-in module of the present invention is excellent in mechanical strength, and is affected by external stress applied during handling and mounting, and heat caused by a difference in thermal expansion between the semiconductor package and the mounted substrate after mounting. It is a module with a built-in semiconductor chip that is resistant to stress and has a structure in which the semiconductor chip is not destroyed.
[0028]
Moreover, the curable composition used for the semiconductor chip built-in module of the present invention,
(1) The total amount of (A) thermosetting resin and (B) latent curing agent is 100 parts by mass, and (C) the thermoplastic resin is preferably 10 to 100 parts by mass, more preferably 20 to 80 parts. Parts by weight, in particular in the range of 30-60 parts by weight, and
(2) 70 to 95 parts by mass of (D) the inorganic filler with respect to 5 to 30 parts by mass of the total amount of (A) thermosetting resin, (B) latent curing agent, and (C) thermoplastic resin, More preferably, the amount is in the range of 85 to 93 parts by mass, particularly 89 to 91 parts by mass.
[0029]
The thermosetting resin is liquid at room temperature (generally 25 ° C.), and the thermoplastic resin is desirably in a powder form when the thermosetting resin is uncured. The resin composition constituting the curable composition is mainly composed of a thermosetting resin that is liquid at room temperature, contains at least a thermoplastic resin and a latent curing agent, and in an uncured state, the thermoplastic resin is powdered. It is preferable that it is a shape. When such a resin composition is heated, it is promoted that the thermoplastic resin powder absorbs the liquid component and swells, and as a result, the viscosity increases even in an uncured state and becomes irreversibly substantially. It can be in a solid state. When further heated to reach the activation temperature of the latent curing agent, curing begins, curing proceeds, and finally can be fully cured.
[0030]
Examples of the thermosetting resin that can be used in the present invention include various resins such as a liquid epoxy resin and a liquid phenol resin, but from the viewpoint of heat resistance and electrical insulation, a liquid epoxy resin is particularly preferable in the present invention. Moreover, since it is liquid, the viscosity of a curable composition is reduced, and even when it does not contain a solvent, the processability of a curable composition becomes favorable and it has the advantage that it becomes easy to process into an insulating layer. Furthermore, since it does not contain a solvent, the generation of voids in the insulating layer can be reduced, and as a result, the insulating property of the insulating layer can be improved, which is preferable.
[0031]
As the liquid epoxy resin as described above, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol AD type epoxy resin, a phenol novolac type epoxy resin, or the like can be used. An epoxy resin that is solid at room temperature may be added to such a liquid epoxy resin. Moreover, you may add the epoxy resin which brominated partially, In this case, it is preferable at the point which the flame retardance of the insulating layer which is a resin composition and its hardened | cured material improves.
[0032]
The latent curing agent can be appropriately selected according to the thermosetting resin to be used. For example, when a liquid epoxy resin is used, a dicindiamide curing agent, a urea curing agent, an organic acid hydrazide curing agent, a polyamine salt curing agent, an amine adduct curing agent, and the like can be used. These have an activation temperature of preferably 80 ° C. or higher, more preferably 90 ° C. or higher. The blending amount of the latent curing agent can be selected in an appropriate amount depending on the kind thereof and the kind of thermosetting resin and the combination thereof. When using a liquid epoxy resin, it is preferable to mix | blend so that the reactive group of a latent hardening | curing agent may exist normally in the range of 0.7-1 equivalent ratio with respect to 1 equivalent of epoxy groups.
[0033]
The thermoplastic resin is not particularly limited as long as it has a property of absorbing and swelling a liquid component contained in a resin composition containing a liquid thermosetting resin as a main component, particularly a liquid thermosetting resin. Although it does not specifically limit, what swells according to the kind of thermosetting resin to be used is selected, and it is especially preferable that it is a powder form. Specifically, polyvinyl chloride, polymethyl methacrylate, polyethylene, and polyamide can be used as the thermoplastic resin, and these resins are particularly preferable when a liquid epoxy resin is used.
[0034]
The average particle size of the thermoplastic resin powder is generally preferably 1 to 100 μm. The amount of the thermoplastic resin powder mixed in the resin composition containing the liquid component is sufficient to absorb the liquid component in which the thermoplastic resin powder flows freely, and as a result, the mixture is substantially solidified. I need it. When using a liquid epoxy resin, it is 10-100 mass parts with respect to 100 mass parts of total amounts of the resin composition which has a liquid epoxy resin as a main component, Preferably it is 20-80 mass parts, More preferably, it is 30-60 mass parts. The thermoplastic resin powder is used. Swelling of the thermoplastic resin powder with respect to the liquid component is promoted by heat treatment. Therefore, solidification is preferably performed by heat-treating the curable composition.
[0035]
In addition, what is necessary is just to implement heat processing at the temperature which becomes a solidified state which the curable composition demonstrated previously. This heat treatment is preferably performed by heating the resin composition to a temperature not lower than the softening point and lower than the melting point of the thermoplastic resin powder, and is preferably performed at a temperature lower than the activation temperature. In the present specification, the softening point means the Vicat softening temperature measured according to the Vicat softening temperature test method of JIS K 7206 with a load of 10 N and a heating rate of 50 ° C./hour. The melting point is measured using a differential scanning calorimeter (DSC) at a heating rate of 10 ° C./min and is defined as the endothermic peak expression temperature.
[0036]
When solidifying the curable composition, it is performed at a temperature lower than the curing start temperature of the thermosetting resin contained in the curable composition, that is, lower than the activation temperature of the latent curing agent, and the curing of the thermosetting resin does not start. Alternatively, it is desirable that the thermosetting resin be maintained at least in the temporary curing reaction stage (that is, in a semi-cured state). The upper limit of the reaction rate of the thermosetting resin contained in the curable composition in the temporary curing reaction stage is preferably 30%, more preferably 10%. In this case, the heat treatment temperature is preferably 50 to 150 ° C, more preferably 60 to 120 ° C, and particularly preferably 70 to 90 ° C. The heating time only needs to be sufficient for the curable composition to be substantially solidified. Here, the reaction rate is defined as the rate of the curing reaction of the thermosetting resin, and the stage at which the curing reaction is completed with respect to the calorific value accompanying the reaction measured using a differential scanning calorimeter (DSC). It can be measured by calculating the ratio of the total heat generation amount.
[0037]
(D) Inorganic filler is Al with excellent thermal conductivity ₂ O ₃ , MgO, BN, SiO ₂ , SiC, Si ₃ N ₄ And at least one filler selected from AlN. This is because the bending strength of the semiconductor chip built-in module can be improved and various performances of the module can be secured. By changing the material of the inorganic filler, the thermal expansion coefficient, thermal conductivity, dielectric constant, etc. of the curable composition can be controlled.
[0038]
Al ₂ O ₃ When is used, a coefficient of thermal expansion can be reduced, and a module having excellent thermal conductivity can be realized. Also SiO ₂ Can be used to control the dielectric constant and reduce the thermal expansion coefficient. In addition, by selecting AlN, MgO, BN, etc., a semiconductor chip built-in module with further excellent thermal conductivity can be realized. The inorganic filler is preferably in a granular form, and the average particle diameter is suitably in the range of 0.1 to 100 μm. When the particle diameter is out of this range, the filling property of the inorganic filler and the heat dissipation property of the insulating layer may be lowered. The particle diameter is preferably 7 to 12 μm.
[0039]
The content of each component in the curable composition containing (A) a thermosetting resin and (B) a latent curing agent, (C) a thermoplastic resin, and an inorganic filler (D) is the entire curable composition. Is 100 parts by mass, for example, 5 to 30 parts by mass, preferably 7 to 15 parts by mass of a resin composition comprising (A) a thermosetting resin, (B) a latent curing agent, and (C) a thermoplastic resin. Parts, more preferably 9 to 12 parts by mass, and inorganic filler (D) 70 to 95 parts by mass, preferably 85 to 93 parts by mass, and more preferably 88 to 91 parts by mass. When the blending ratio of the inorganic filler is larger than this range, the fluidity and adhesiveness of the curable composition are lowered, and it may be difficult to adhere to the wiring pattern. On the other hand, if it is smaller than this range, the bending strength and heat dissipation of the insulating layer may be lowered.
[0040]
It is preferable that the curable composition contains additives such as a coupling agent, a dispersant, a colorant, and a release agent as necessary. By containing such an additive, the characteristics of the insulating layer can be improved. For example, the coupling agent is effective in improving the withstand voltage because it improves the adhesion between the inorganic filler and the resin composition. In addition, the dispersant improves the dispersibility of the inorganic filler and is effective in reducing composition unevenness. Further, if the colorant is a black colorant such as carbon powder, it is effective for improving heat dissipation. The presence of these additives is ignored in the above quantitative ratio.
[0041]
In the semiconductor chip built-in module of the present invention, it is desirable that the semiconductor chip is mounted face down and the back surface of the semiconductor chip is exposed from the insulating layer. This is because the semiconductor chip built-in module can be processed from the back side of the semiconductor chip to reduce the thickness, and thus a thin semiconductor chip built-in module having mechanical strength is obtained.
[0042]
Furthermore, in the semiconductor chip built-in module of the present invention, it is desirable that a shield layer is provided on at least a part of the surface of the insulating layer covering the back surface and / or the side surface of the semiconductor chip mounted face down. As a result, electromagnetic waves emitted from the semiconductor chip to the outside can be blocked, and malfunction of other electric circuits including electronic components is not caused. Further, it is possible to shield electromagnetic waves directed from the outside toward the module with a built-in semiconductor chip, and the reliability of the module with a built-in semiconductor chip itself is high. Such a shield layer is preferably a metal in the form of a thin layer, such as Cu, Ni, Cr, Ag, Sn.
[0043]
In the semiconductor chip built-in module of the present invention, the wiring pattern may be formed on the surface of the circuit board. As a result, the electrode pitch of the semiconductor chip can be redistributed by the circuit board, and the degree of freedom of the mounting pitch of the semiconductor chip built-in module is improved.
[0044]
In one aspect, the method for manufacturing a module with a built-in semiconductor chip according to the present invention includes:
Mounting the semiconductor chip face down on the wiring pattern formed on the surface of the support;
Embedding the semiconductor chip in a curable composition containing (A) a thermosetting resin, (B) a latent curing agent, (C) a thermoplastic resin, and an inorganic filler (D);
Heat treating the curable composition to solidify the curable composition; and
A step of leaving the support in the thickness direction of the solidified curable composition to form a divided portion;
Heating and curing the curable composition;
Dividing according to the dividing unit;
It is characterized by including.
[0045]
In the production method of the present invention, since the dividing line is formed in a state where the thermosetting resin contained in the curable composition is solidified in an uncured state, the curable composition is filled with a large amount of a hard inorganic filler. However, it can be easily processed and wear of the processing tool can be minimized. In addition, even when the thermosetting resin is cured by subsequent heating, since it is solidified irreversibly, the flow of the curable composition by heating does not occur, and the shape at the time of forming the dividing line is maintained. .
[0046]
In the production method of the present invention, it is desirable that the support is a release carrier having releasability, and the step of dividing based on the dividing line is a step of peeling and removing the release carrier. As a result, a plurality of semiconductor chip built-in modules can be manufactured in a lump. Further, until the final process, the wiring pattern is protected from contamination and impact by the release carrier.
[0047]
Furthermore, in the manufacturing method of the present invention, it is also effective that the support is a circuit board. It is possible to provide a semiconductor chip built-in module in which the degree of freedom of the mounting pitch is improved.
[0048]
Moreover, in the manufacturing method of this invention, it is preferable to implement heat processing when solidifying a curable composition, and it is desirable that heat processing temperature is less than the activation temperature of a latent hardener. Moreover, the viscosity of the curable composition before solidification is in the range of 10 to 100 Pa · s at 25 ° C., and the viscosity of the curable composition after solidification is 10,000 to 100,000 Pa · s at 25 ° C. It is desirable. This is because, if the viscosity of the solidified curable composition is within this desired range, the divided portions can be formed without adversely affecting the semiconductor chip built-in module finally obtained, for example, which can be easily processed thereafter.
[0049]
In the manufacturing method of the present invention, the step of embedding the semiconductor chip in the curable composition includes heating and pressurizing the sheet made of the curable composition from the back side of the semiconductor chip mounted face down. It is desirable to do by. Thereby, a semiconductor chip can be embedded by a simple process.
[0050]
Further, in the manufacturing method of the present invention, the step of embedding the semiconductor chip in the curable composition is after applying the paste made of the curable composition under reduced pressure from the back side of the semiconductor chip mounted face down. It is also effective to perform by heating. By carrying out under reduced pressure, the paste-like curable composition can be spread to details.
[0051]
In the production method of the present invention, the semiconductor chip is embedded in the curable composition and the curable composition is heat-treated to solidify the curable composition irreversibly in the same step. desirable. In particular, when the viscosity of the curable composition is once lowered, it is preferable to embed a semiconductor chip and subsequently solidify by increasing the temperature.
[0052]
Further, in the manufacturing method of the present invention, before the step of forming the divided portion in the curable composition, at least a part of the semiconductor chip embedded in the curable composition and the curable composition is transferred to the semiconductor chip. It may be desirable to add a process of removing from the opposite side of the circuit forming surface. In this case, it is desirable that the removing process is performed by a method including at least one selected from polishing, grinding, and cutting.
[0053]
Thereby, since the semiconductor chip is thinly processed while being embedded in the solidified curable composition, the semiconductor chip is suppressed from being damaged by an external force acting during the thinning process. In addition, it is preferable that the thermosetting resin contained in the curable composition is processed in a solidified state in an uncured state. In that case, it is easy even if the curable composition is filled with a large amount of a hard inorganic filler. The wear of the processing tool can be minimized. Further, since processing is performed on the embedded semiconductor chip, it is possible to prevent contamination of the semiconductor chip more than necessary. Further, since the release carrier is peeled and removed after the thin processing, the contamination of the wiring pattern can be prevented. In this way, a thin semiconductor chip built-in module having mechanical strength can be provided.
[0054]
In the manufacturing method of the present invention, before the step of peeling the release carrier, a shield is provided on at least a part of the surface of the insulating layer covering the opposite surface and / or side surface of the circuit formation surface of the semiconductor chip. It is desirable to add a step of forming a layer. In this case, it is preferable that the method for forming the shield layer is plating. Thereby, a semiconductor chip built-in module having excellent high frequency characteristics and high frequency reliability can be provided.
[0055]
Hereinafter, specific embodiments of the present invention will be described in more detail with reference to the drawings.
[0056]
(Embodiment 1)
FIG. 1 is a schematic cross-sectional view showing a configuration of a semiconductor chip built-in module according to Embodiment 1 of the present invention. As shown in FIG. 1, in the semiconductor chip built-in module 100, a curable composition containing a thermosetting resin (A), a thermoplastic resin (B), a latent curing agent (C), and an inorganic filler (D) is cured. And an insulating layer 104 made of the cured composition, a wiring pattern 101, and a semiconductor chip 102 disposed inside the insulating layer and mounted face-down on the wiring pattern 101 via bumps 103. It is said.
[0057]
In the semiconductor chip built-in module of the present invention, a shield layer is provided on at least a part of the surface of the insulating layer so as to cover the opposite surface and / or the side surface of the circuit formation surface (that is, the active surface) of the semiconductor chip 102. Is preferred. In the embodiment shown in FIG. 1, a shield layer 105 is provided on the surface of the insulating layer so as to cover the opposite surface and the side surface of the circuit formation surface of the semiconductor chip 102.
[0058]
The semiconductor chip 102 used in the semiconductor chip built-in module of the present invention may be any as long as it has an electrode on the circuit forming surface, and for example, a semiconductor element such as a transistor, IC, or LSI can be used. In particular, a semiconductor bare chip is desirable, and it is preferable in that it can be electrically connected to the wiring pattern 104 in the shortest distance by being mounted face-down via the bump 103. As a method of mounting face down, a known flip chip method can be used, and there is no particular limitation. For example, a connection using a bump mainly composed of solder or a conductive adhesive, a connection using a solder or a conductive adhesive to a metal bump formed on an electrode of a semiconductor chip can be used. Although not shown in FIG. 1, the semiconductor bear and the connection portion of the wiring pattern may be sealed with a sealing resin. Although sealing is not always necessary, it serves to reinforce mechanically so as not to cause a failure in electrical connection during the subsequent process, and as a result, workability is improved.
[0059]
The wiring pattern 101 is not particularly limited as long as the wiring pattern 101 is formed of a material that is excellent in conductivity and can easily form a circuit, but is preferably a metal foil. Examples of the metal used for the wiring pattern include Cu, Ni, Al, and an alloy mainly containing any one of these metals, but an alloy mainly containing Cu and Cu is particularly preferable. This is because Cu is excellent in electric conductivity, inexpensive and can easily form a circuit pattern. Furthermore, it is preferable that Ni or Au is plated thereon because a stable connection with the bump 103 of the semiconductor chip 102 can be obtained.
[0060]
The wiring pattern 101 is preferably formed by transfer. For this reason, it is preferable to use a transfer pattern forming material in which a metal foil having a wiring pattern shape is attached to a release carrier via a release layer. This makes it easy to produce a fine wiring pattern by etching or the like, and further, since there is a release carrier, it is easy to handle.
[0061]
The shield layer 105 is not particularly limited as long as it has an electromagnetic shielding function, but the shield layer is formed using a metal film, a conductive resin composition, a resin composition in which magnetic powder is mixed, or the like. Can be formed. In particular, the metal film is preferable in that it can be thinly formed by plating, vapor deposition, sputtering, or the like. Examples of the metal that forms the metal film include Cu, Ni, Cr, Ag, Sn, and alloys containing any one or more of these metals as a main component. Further, when the shield layer has conductivity, it is preferably a ground potential, and it is preferable that the grounding terminal of the semiconductor chip is in contact with the electrically connected wiring pattern. This further stabilizes the operation of the semiconductor chip. Further, the shield layer does not need to be formed on the entire surface of the curable composition, and may have a mesh shape or a lattice shape as long as it performs an electromagnetic shielding function.
[0062]
In the semiconductor chip built-in module of the above-described embodiment, since the insulating layer in which the semiconductor is embedded is made of a cured composition having high bending strength, reflow cracks that are more likely to occur as the semiconductor chip built-in module becomes thinner are effectively produced. Can be prevented. In addition, a semiconductor chip built-in module with high mechanical strength is obtained, and the semiconductor chip is caused by external stress applied during handling and mounting of the module, and thermal stress caused by the difference in thermal expansion between the semiconductor module and the mounted substrate after mounting. It is suppressed from being destroyed. Therefore, the thickness can be further reduced. Further, the shield layer can effectively block electromagnetic waves radiated from the semiconductor chip to the outside and electromagnetic waves entering the module from the outside. As a result, a semiconductor chip built-in module with high electrical reliability is obtained.
[0063]
(Embodiment 2)
2 (a) to 2 (d), FIGS. 3 (a) to 3 (c) and FIGS. 4 (a) to 4 (d) show a method of manufacturing the semiconductor chip built-in module of the present invention shown in FIG. It is typical sectional drawing shown separately. As long as there is no notice in particular, the material to be used can be the same as that described in the first embodiment, and the same function is applied to the same-named constituent members and manufacturing methods.
[0064]
As shown in FIG. 2A, a release carrier 206 having a wiring pattern 201 formed on the surface is prepared. The release carrier can be mechanically peeled and released after the wiring pattern is transferred to the insulating layer, and an organic resin film such as polyethylene or polyethylene terephthalate, or a metal foil such as copper or aluminum foil can be used. .
[0065]
When the release carrier is an organic resin film, a metal carrier such as copper foil is bonded to the release carrier via an adhesive, or a film-like metal layer further formed on the metal foil by electrolytic plating or the like. Then, a wiring pattern is formed using an existing processing technique such as a chemical etching method. If the release carrier is an organic film, electrical performance inspection of the connection between the semiconductor chip and the wiring pattern can be performed at the stage where the semiconductor chip is mounted. Further, the wiring pattern can be formed again on the release film peeled off by transferring the wiring pattern, and can be reused.
[0066]
When the release carrier is a metal foil, the metal foil is bonded on a release layer (not shown) on the release carrier or a metal layer is formed by plating, and then a wiring pattern is formed by a chemical etching method or the like. Process. Although a peeling layer is not specifically limited, A thin organic layer and metal plating layers, such as nickel, chromium, and lead, can be used. It is desirable that the adhesive strength between the release carrier and the wiring pattern is such that the wiring pattern adhered to the insulator is not peeled off when the release carrier is peeled off in the step of transferring the wiring pattern. When the release carrier is a metal foil, the wiring pattern is not moved by the flow of the curable composition in the step of transferring the wiring pattern to the insulating layer.
[0067]
As shown in FIG. 2B, the semiconductor chip 202 is mounted on the wiring pattern 201 formed on the release carrier 206 via the bumps 203 by the flip chip method or the like as described in the first embodiment. . 2 (b) to (d), FIGS. 3 (a) to (c) and FIGS. 4 (a) to 4 (d) do not show the sealing resin at the connection portion between the semiconductor chip and the wiring pattern. However, in a more preferred embodiment, it is sealed with a sealing resin. In this case, after mounting the semiconductor chip face down, a resin is injected into a desired location and cured.
[0068]
Next, as shown in FIG. 2C, an uncured sheet of a curable composition comprising a thermosetting resin, a thermoplastic resin, a latent curing agent, and an inorganic filler on a semiconductor chip 202. The material 204 is aligned and overlapped. In addition, the curable composition 204 which comprises the sheet-like article 204 is obtained as follows:
[0069]
First, each component constituting the curable composition is weighed and mixed. As a mixing method, for example, a ball mill, a planetary mixer, a stirrer, or the like can be used. Moreover, as a property of a curable composition, it is preferable that it is a clay shape or a paste-form, Specifically, it is preferable that a viscosity is 10-500 Pa.s at room temperature, It is 10-100 Pa.s. Is more preferable. The viscosity is measured by using a cone plate type E viscometer and setting the shear rate applied at 25 ° C. to 5 / sec. This is because the curable composition can be easily handled within this range, and the semiconductor chip can be easily embedded by subsequent heating and pressing. The above-mentioned viscosity means a viscosity at a heat treatment temperature that promotes swelling of the thermoplastic resin powder in the curable composition with respect to the liquid component, that is, a temperature lower than a temperature at which the thermosetting composition is solidified. The viscosity at a certain temperature in the range from the heat treatment temperature to the heat treatment temperature may correspond to the viscosity within the above range.
[0070]
The above-mentioned curable composition is processed into a sheet. It does not specifically limit as a method of processing a curable composition into a sheet form, What is necessary is just to select suitably according to the viscosity and property of a composition. For example, an extrusion method using an extruder, a coating method using a roll coater or a curtain coater, a printing method, a doctor blade method, or the like can be used.
[0071]
Next, the sheet-like curable composition 204 is stacked on the release carrier 206 on which the semiconductor chip 202 is mounted, and this is heated and pressurized. As a result, the semiconductor chip 202 is embedded in the curable composition 204 as shown in FIG. This heating is performed at a temperature at which the curable composition is apparently melted and softened to easily embed a semiconductor chip, and subsequently, the viscosity of the resin composition is increased to solidify irreversibly. It is desirable. Note that the term “appearance” means that not all the components of the composition are melted and softened, but when the composition is viewed as a whole, it appears to be melted and softened. When solidifying in this way, the curing of the thermosetting resin contained in the curable composition must not be completed, and the curing of the thermosetting resin does not substantially start, or at least a so-called temporary curing reaction. More preferably, the step is carried out so as to hold the thermosetting resin.
[0072]
Depending on the type of thermosetting resin and latent curing agent to be used, the solidification temperature can be appropriately selected. Specifically, the solidification temperature is, for example, 50 to 150 ° C, preferably 60 to 120 ° C. More preferably, the temperature is set to 70 to 90 ° C. The pressurizing pressure is not particularly limited as long as the wiring pattern and the semiconductor chip can be embedded. Usually 0.5 to 20 MPa, preferably 1 to 5 MPa. For such heating and pressing, for example, a press device with a hot plate can be used. The viscosity when the curable composition is solidified irreversibly by heating and pressing is preferably 10,000 to 500,000 Pa · s, and more preferably 10,000 to 100,000 Pa · s. This viscosity is measured by the method described above. If it exists in this preferable range, the shape of what was obtained by heating-pressing can be hold | maintained also in normal handling. Further, when the viscosity is higher than the above-mentioned preferable range, the subsequent processing may be difficult. Obviously, the term “solidification” does not mean that it becomes solid in a strict sense, but it means that the fluidity is virtually lost and it appears to be treated as a solid. To do. The above-mentioned viscosity means a viscosity measured at 25 ° C. after solidifying the curable composition of the present invention by heating and pressing.
[0073]
3A to 3C show a process of forming a dividing line. The curable composition with a built-in semiconductor chip obtained as shown in FIGS. 2 (a) to 2 (d) is shown in FIG. 3 (a). This is substantially the same as FIG. 2D, and the semiconductor chip 302 mounted on the wiring pattern 301 on the release carrier 306 via the bumps 303 is embedded in the solidified curable composition 304. ing.
[0074]
3B, the dividing line 305 is formed using the dividing tool 307 in a state where the release carrier 306 is provided at a predetermined position of the solidified curable composition 304. As shown in FIG. As shown in the figure, the curable composition, the wiring pattern, and the semiconductor chip are connected by the release carrier 306 even after the dividing line is formed. The curable composition is relatively soft because the thermosetting resin contained is not completely cured, and preferably is in a solidified state in a substantially uncured state, and it is easy to form dividing lines. Even if the curable composition is filled with a large amount of hard inorganic filler, the wear of the processing tool can be minimized. The method for forming the dividing line is not particularly limited, and for example, pressing with a mold, cutting with a rotary blade, or the like can be used.
[0075]
Next, this is heated to complete the curing of the curable composition 304 to form an insulating layer. In the present specification, “completed” means that the function of the semiconductor module is adversely affected even if the subsequent curing does not occur at all (100% cured), or even if the subsequent curing occurs to some extent. Although it has been cured to a certain extent (for example, 95% has been cured), it is used to include cases where curing has not been completed. Since the curable composition is solidified irreversibly, the flow of the curable composition by heating does not occur, and the shape is maintained.
[0076]
The curable composition used in the present invention comprises a thermoplastic resin, is heated to the solidification temperature, and then has the same properties as the original composition even after returning to a lower temperature such as room temperature. In this sense, the term “irreversible solidification” is used. This is considered to be an inherent property derived from including a thermoplastic resin. In particular, the thermoplastic resin is considered to absorb the liquid material, and even if the temperature is lowered, the absorbed liquid material is not expected to be discharged from the thermoplastic resin and return to the original state.
[0077]
When the curing is completed, the semiconductor chip 302 is sealed with the curable composition 304 as shown in FIG. 3C, and the curable composition 304 and the wiring pattern 301 are firmly bonded. The heating temperature is higher than the activation temperature of the latent curing agent in the curable composition. The temperature is selected according to the type of the thermosetting resin and the latent curing agent. Specifically, for example, 80 to 300 ° C, preferably 120 to 240 ° C, more preferably 150 to 200 ° C is appropriate. is there. This is because if it is lower than this preferred range, curing may be insufficient or it may take time to cure, and if it is higher than the preferred range, the resin may initiate thermal decomposition.
[0078]
Moreover, it is preferable to pressurize simultaneously at the time of this heating. Thereby, the adhesiveness between the wiring pattern and the semiconductor chip and the curable composition is improved. The pressurizing pressure may be determined as appropriate, but usually the upper limit is 5 MPa, and preferably 0.01 to 3 MPa. When it is higher than this range, the curable composition may be deformed. For the heating and pressurization, for example, a pressurizing oven apparatus that pressurizes with a high-pressure gas in a sealed chamber can be used.
[0079]
4A to 4C show a process of forming a shield layer. The semiconductor chip built-in curable composition obtained as shown in FIGS. 3A to 3C is shown in FIG. The semiconductor chip 402 mounted on the wiring pattern 405 on the release carrier 406 via the bumps 403 is sealed with the cured composition 404, and further, a predetermined dividing line 408 is formed.
[0080]
On this, as shown in FIG.4 (b), the shield layer 405 is formed. The shield layer 405 is preferably formed with a metal film by a known plating method, vapor deposition method, or sputtering method. In the vapor deposition method and the sputtering method, the metal film is deposited from a certain direction, so that the metal film does not adhere to the back surface of the release carrier. On the other hand, since the plating method is immersed in a plating solution, as shown in FIG. 4B, a metal film is also attached to the exposed surface of the release carrier.
[0081]
Next, as shown in FIG. 4C, the release carrier is peeled and removed. Simultaneously with the removal, the module is divided into modules according to the dividing line, and the semiconductor chip built-in module shown in FIG. 4D can be obtained. Since the release carrier exists until the final process, a plurality of semiconductor chip built-in modules can be manufactured in a lump. Also, during the manufacturing process, the wiring pattern is protected from contamination and impact by the release carrier. In this way, a module with a built-in semiconductor chip having high reliability and high frequency characteristics can be obtained.
[0082]
As can be easily understood from FIGS. 2 to 4, a plurality of the same wiring patterns may be formed on the release carrier 206 (that is, it may be an array of wiring patterns). The semiconductor chip of the same type is mounted on each wiring pattern, the division part 305 is formed so as to define a plurality of predetermined wiring patterns and semiconductor chips, and then the curable composition is cured (that is, the semiconductor chip) Get an array of built-in modules). Then, if necessary, a shield layer 407 is formed, and finally, the release carrier 206 is removed to obtain a plurality of individual semiconductor chip built-in modules. Of course, the plurality of wiring patterns on the release carrier may be different from each other, and the semiconductor chips to be mounted may be of different types. In the method for producing a module with a built-in semiconductor chip of the present invention, the curable composition is formed by forming divided portions after solidifying the curable composition, and then curing the curable composition to obtain a cured composition. However, it is not necessary to carry out processing such as polishing, cutting, cutting, etc. in a state where it is solidified moderately, and to carry out such processing in the state of a cured composition having a high hardness.
[0083]
In the present embodiment, as described with reference to FIG. 2, the semiconductor chip 202 mounted on the wiring pattern 205 on the release carrier 206 via the bump 203 is embedded in the curable composition 204. At that time, the curable composition formed into a sheet was used. However, in the present invention, the semiconductor chip embedding method is not limited to this. For example, you may embed by supplying the paste which consists of a curable composition from the back side of the semiconductor chip mounted face-down under pressure reduction. By supplying the paste-like curable composition under reduced pressure, the gap between the semiconductor chip 202 and the wiring pattern 201 can be sufficiently filled.
[0084]
A specific embedding method using the paste-like curable composition is as follows. First, as shown in FIG. 2B, the semiconductor chip 203 is mounted on the wiring pattern 201. Next, the paste is printed and supplied using a screen printing apparatus capable of holding the printing stage under reduced pressure. Printing is performed using a metal mask having an opening corresponding to a region to be printed and having a thickness corresponding to a desired thickness of the curable composition after printing. This metal mask is overlaid so that the semiconductor chip is positioned in the opening. Next, printing is performed while pressing the paste-like curable composition from above the metal mask with a squeegee. Thereby, a curable composition can be provided to the area | region corresponding to the opening part of a metal mask. This printing process is performed so that the periphery of the semiconductor chip is in a reduced pressure atmosphere. The pressure is preferably performed in the range of 100 to 10,000 Pa.
[0085]
After printing the paste, the thermoplastic resin powder in the curable composition absorbs the liquid component by heat treatment and swells, thereby increasing the viscosity of the resin composition and irreversibly solidifying. At this time, it is desirable to pressurize simultaneously with heating using a pressure oven apparatus. The pressurizing pressure may be appropriately determined, but is preferably 0.5 to 1 MPa.
[0086]
Even when a paste-like curable composition is used, after solidifying the curable composition, the semiconductor chip is subjected to the same steps as those described in the present embodiment using the sheet-like curable composition. A built-in module can be obtained.
[0087]
(Embodiment 3)
5A to 5E are schematic cross-sectional views showing a method for manufacturing a semiconductor chip built-in module according to the third embodiment of the present invention by process. In the third embodiment, an embodiment of a semiconductor module and a manufacturing method thereof according to the present invention will be described. The materials used and the method for obtaining them are the same as those described in the above embodiments unless otherwise specified.
[0088]
FIG. 5 (a) shows an array of semiconductor chip modules in a solidified state that has not been cured, which is the same as that obtained through the steps of FIGS. 2 (a)-(d). The semiconductor chip 502 mounted on the array of wiring patterns 505 on the release carrier 506 via the bumps 503 is embedded in the solidified curable composition 504.
Next, as shown in FIG. 5B, the curable composition 504 and the semiconductor chip 502 are removed from the surface opposite to the release carrier 506 until a predetermined thickness is reached. The removal processing method is preferably a method selected from polishing, grinding, and cutting. Since the semiconductor chip 502 is processed thinly while being embedded in the solidified curable composition 504, the semiconductor chip is not damaged by external force during processing even if the semiconductor chip 502 is thinned. Moreover, since the thermosetting resin contained in the curable composition is processed in a solidified state in an uncured state, it can be easily processed even if the curable composition is filled with a large amount of hard inorganic filler. As a result, wear of the processing tool can be minimized. Further, since processing is performed on the embedded semiconductor chip, it is possible to prevent the semiconductor chip from being contaminated more than necessary. Furthermore, since the wiring pattern is covered with the release carrier, the contamination of the wiring pattern can be prevented. By thinning the semiconductor chip 502 while protecting the semiconductor chip 502 in this way, the thickness can be reduced to about 50 μm.
[0089]
Next, as shown in FIG. 5C, in the array processed as thin as described above, the dividing carrier 506 is reached by the dividing tool 507 as shown in FIG. To form. Then, in FIG.5 (d), the curable composition 504 is hardened by heating similarly to FIG.3 (c).
[0090]
Finally, the release carrier 506 is removed. As a result, the array is automatically divided along the dividing line 505, and as shown in FIG. 5E, an extremely thin array of semiconductor chip built-in modules having mechanical strength can be obtained.
[0091]
In this embodiment, no shield layer is formed, but as described above, a shield layer may be formed. In general, a semiconductor chip is electrically connected to the circuit formation surface and the back surface thereof except for a structure in which a current flows in the thickness direction of the chip to cope with a large current, such as a power semiconductor. Insulated structure. In this case, a shield layer can be formed on the back surface of the semiconductor chip exposed from the cured composition, like the semiconductor chip built-in module in the present embodiment.
[0092]
(Embodiment 4)
6A to 6C are schematic cross-sectional views showing a method for manufacturing a semiconductor chip built-in module according to the fourth embodiment of the present invention by process. In the fourth embodiment, an embodiment of a semiconductor module and a manufacturing method thereof according to the present invention will be described. The materials used and the method for obtaining them are the same as those described in the above embodiments unless otherwise specified.
[0093]
In the first, second, and third embodiments, the semiconductor chip is mounted on the wiring pattern on the release carrier as the support, but the semiconductor chip can be mounted on the wiring pattern on the circuit board as the support. In the present embodiment, an embodiment of a semiconductor chip built-in module using a circuit board as a support and a manufacturing method thereof will be described.
[0094]
FIG. 6A shows an array of semiconductor chip built-in modules obtained through FIGS. 5A to 5D in the third embodiment. However, a circuit board 606 is used as a support for the wiring pattern 601 instead of the release carrier. The semiconductor chip 602 mounted on the wiring pattern 601 on the circuit board 603 via the bumps 603 is thinned at the solidification stage of the curable composition 604, and predetermined dividing lines 605 are formed in the curable composition. After being formed, it is cured.
[0095]
The circuit board 606 is a multilayer wiring board (including a double-sided wiring board) having at least two wiring layers, and has a wiring pattern on at least one side (side facing the semiconductor chip) or both sides (aspect shown) of the exposed surface. 601 is formed. The multilayer wiring board may be a multilayer substrate having a wiring pattern inside other than the exposed surface and having the front and back surfaces and the inner wiring pattern connected by plated through holes or inner via holes. The wiring pattern on the exposed surface is electrically connected to the internal wiring pattern in a predetermined manner.
[0096]
Next, as shown in FIG. 6B, the circuit board is divided by a dividing tool 607 along the dividing line 605 formed in the curable composition 604, and as shown in FIG. A semiconductor module is obtained. As the dividing method, for example, punching with a mold or cutting with a laser can be used. This division may be performed before the mounting external terminals are formed on the circuit board 606. Thereby, many semiconductor modules can be manufactured at a low cost at a time. In this way, the electrode pitch of the semiconductor chip can be rewired by the circuit board, and as a result, a thin semiconductor chip built-in module with improved flexibility in the mounting pitch can be provided.
[0097]
In this embodiment, the shield layer is not formed, but may be formed as necessary. For example, if the exposed portion of the circuit board is masked by a known method, the shield layer can be formed as in the first embodiment.
[0098]
The above-described embodiment and examples described later are merely examples of the present invention and do not limit the present invention. It goes without saying that further embodiments can be adopted based on the invention defined by the claims. In addition, the module with a built-in semiconductor chip includes known electronic components other than the semiconductor chip, such as a chip resistor, a chip capacitor, a chip inductor, and a surface acoustic wave element, in addition to or in addition to the semiconductor chip. It can be built in instead. In this sense, in this specification, the term “semiconductor chip” is widely interpreted, and such known electronic components are also included in the semiconductor chip.
[0099]
【Example】
Hereinafter, the present invention will be described more specifically with reference to examples.
Example 1
The second embodiment described above was implemented as described below. First, a method of manufacturing the wiring pattern forming material (or wiring pattern transfer member) shown in FIG. 2A, that is, a method of forming the wiring pattern 201 on the release carrier 206 will be described.
Metal foil was used for the release carrier. As this metal foil, an existing copper foil for circuit boards can be used. In general, a copper foil for a circuit board is prepared by first dissolving a copper salt raw material in an alkaline bath, and by passing an electric current so that a high current density is applied thereto, copper is electrodeposited on the rotating drum. It is produced by continuously winding the plating layer. At this time, an electrolytic copper foil with an arbitrary thickness can be produced by controlling the plating current density, the drum rotation speed, and the like. In this example, an electrolytic copper foil (carrier copper foil) having a thickness of 70 μm was prepared as the release carrier 206.
[0100]
Next, a thin release layer (not shown) composed of chromium and chromate is formed on the surface of the prepared carrier copper foil 206, and copper plating is performed on the release layer to produce a copper layer having a thickness of 12 μm. did.
[0101]
Thereafter, the copper layer formed on the carrier copper foil through the release layer was chemically etched by a known photolithography method using an aqueous iron dichloride solution to form a wiring pattern at a predetermined position.
[0102]
In this manner, the semiconductor chip was mounted on the carrier copper foil (release carrier 206) having the wiring pattern by the flip chip method. The semiconductor chip used was a silicon memory semiconductor and was 10 mm × 10 mm (thickness 0.3 mm).
[0103]
In mounting, first, a gold bump having a two-step protrusion was formed by bonding a 25 μm diameter gold wire to an aluminum electrode of a semiconductor chip. Since the height of the formed gold bumps is not constant, leveling is performed to make the height uniform by pressing the mold against the gold bump group on the semiconductor chip and pressurizing with a constant pressure. The produced semiconductor chip with gold bumps was pressed against the conductive paste surface squeezed to a certain thickness from the gold bump side, and the conductive paste was applied to the tip of the gold bumps having a two-step protrusion. The semiconductor chip thus fabricated was aligned and superimposed on the wiring pattern 201, and the conductive paste was cured by heating, and the gold bumps and the wiring pattern were electrically connected via the conductive paste.
[0104]
Subsequently, the space between the semiconductor chip and the release carrier having the wiring pattern was sealed with a liquid sealing resin. The sealing resin is a paste-like sealing resin in which silica particles for controlling the thermal expansion coefficient are mixed with a liquid epoxy resin. It is dropped into the gap between the semiconductor chip and the wiring pattern, and its surface tension is used. Enclosed.
[0105]
The semiconductor chip is embedded in the curable composition by stacking the sheet-like curable composition in an uncured state on the release carrier having the wiring pattern on which the semiconductor chip is mounted, and heating and pressing, and the curable composition. The product was solidified.
[0106]
The curable composition used was prepared as follows.
The composition of the curable composition is shown below:

[0107]
These components were weighed and mixed with a stirring kneader to prepare a curable composition. Then, this curable composition was processed into a sheet having a thickness of about 500 μm by an extruder. When the viscosity of this resin composition was measured while raising the temperature with an E-type viscometer (manufactured by Eiko Seiki Co., Ltd., measurement condition: shear rate 5 / sec), it was about 50 Pa · s at 50 ° C. and about 80000 Pa at 110 ° C.・ It was s.
[0108]
A carrier copper foil having a wiring pattern on which a semiconductor chip was mounted was set in a mold, and the above-mentioned uncured curable composition sheet was placed thereon. The mold was heated to 70 ° C. and pressurized with a pressure of 3 MPa. The retention time was 15 minutes. As a result, as shown in FIG. 2D, the semiconductor chip 203 is embedded in the curable composition 204, and the thermoplastic resin powder in the curable composition is allowed to absorb and swell the liquid component, thereby curable composition. The viscosity of the product was increased and solidified irreversibly.
[0109]
Next, as shown in FIG. 3B, parting lines were formed on the solidified curable composition leaving a release carrier in the middle of adjacent semiconductor chips. The dividing line is positioned with a die having a blade formed in a lattice shape from above, with the carrier copper foil integrated with the curable composition being set on the die, and pressed with a pressure of 5 MPa. Was done.
[0110]
Then, using the pressure oven apparatus, it heated at 170 degreeC for 2 hours, pressurizing with the pressure of 1 Mpa, and the epoxy resin in a curable composition was hardened. Next, Ni—P plating having a thickness of about 5 μm was applied to the entire surface by electroless plating to form a shield layer 405 as shown in FIG. Finally, the release carrier was peeled off and the semiconductor chip built-in module as shown in FIG. 4D was completed.
[0111]
(Comparative Example 1)
As a comparative example, a curable composition was prepared in the same manner as in Example 1 except that a thermoplastic resin was not used and the amount of the thermosetting resin was 8.5 parts by mass. Using this, a semiconductor chip built-in module was produced in the same manner as described above. However, since this comparative example does not include thermoplastic resin powder, the following production method was used. The carrier copper foil which has the wiring pattern which mounted the semiconductor chip in the metal mold | die was set, and the sheet | seat of the above-mentioned uncured curable composition was mounted on it. The mold was heated to 70 ° C. and held at a pressure of 3 MPa for 15 minutes. This was cured by heating at 170 ° C. for 2 hours while applying a pressure of 1 MPa using a pressure oven apparatus. Next, division was performed by router processing.
[0112]
Thereafter, Cu plating was performed on the entire surface by electroless plating, and further, electrolytic Cu plating and electrolytic Sn plating were applied thereon to form a shield layer 405 as shown in FIG. 4B. Finally, the release carrier was peeled and removed to complete the semiconductor chip built-in module as shown in FIG.
[0113]
(Comparative Example 2)
As a comparative example, a curable composition was prepared in the same manner as in Example 1 except that a thermoplastic resin was not used and the amount of the inorganic filler was 93 parts by mass. Using this, a semiconductor chip built-in module was produced in the same manner as in Comparative Example 1.
[0114]
With respect to the semiconductor chip built-in modules of the above examples and comparative examples, the moldability was evaluated by observing the appearance and observing the presence or absence of voids at the interface between the cured composition and the semiconductor chip or the wiring pattern using an ultrasonic flaw detector.
[0115]
In addition, only the curable composition was cured in the same manner as in the production of the semiconductor module described above, and the bending strength was evaluated. The bending strength was evaluated by the method defined in JIS R-1601. The evaluation method uses a sheet material processed to a certain size as a test piece, puts it on two fulcrums arranged at a certain distance, and measures the maximum bending stress when it is folded by applying a load to one central point between the fulcrums. Is required. Also called three-point bending strength.
[0116]
The above evaluation results are shown below:
[Table 1]

“Void” is a relatively small void existing at the boundary with the insulating layer, particularly the semiconductor chip, and “bad filling” is a relatively large void formed by integrating many voids. .
[0117]
From this result, it can be seen that the semiconductor package of Example 1 according to the present invention has good moldability and high bending strength.
[0118]
In addition, as an evaluation of the reliability of the semiconductor chip built-in module of Example 1, a solder reflow test and a temperature cycle test were performed. The solder reflow test was performed by using a belt-type reflow furnace and passing a temperature history reflow that was held at 260 ° C. for 30 seconds three times. In the temperature cycle test, holding at −55 ° C. for 30 minutes on the low temperature side and holding at 125 ° C. for 30 minutes on the high temperature side was taken as one cycle, and 300 cycles were performed.
[0119]
In either case, no crack was observed in the semiconductor chip built-in module after the test, and no crack was found in the built-in semiconductor chip even when observed with an ultrasonic flaw detector. Therefore, it was found that the semiconductor chip built-in module according to the present invention is highly reliable.
[0120]
(Example 2)
A semiconductor chip built-in module having the same structure as that shown in FIG. 6 was produced as follows.
First, a printed wiring board (R-1766T, manufactured by Matsushita Electric Works) (thickness 200 μm) made of glass epoxy having wiring patterns formed on both sides was prepared. Next, the same semiconductor chip as in Example 1 was flip-chip mounted by the same method.
[0121]
Next, the sheet-like curable composition is stacked in an uncured state on the wiring substrate having the wiring pattern on which the semiconductor chip is mounted, and the semiconductor chip is embedded in the curable composition by heating and pressing, and the curable composition The product was solidified.
[0122]
The composition of the curable composition is shown below:

[0123]
These components were weighed and mixed with a stirring kneader to prepare a curable composition. Then, this curable composition was processed into a sheet having a thickness of about 500 μm by an extruder. A printed wiring board having a wiring pattern on which a semiconductor chip was mounted was set in a mold, and the above-mentioned uncured curable composition sheet was placed thereon. The mold was heated to 70 ° C. and pressurized with a pressure of 3 MPa. The retention time was 15 minutes. As a result, the semiconductor chip 203 is embedded in the curable composition 204, and the thermoplastic resin powder in the curable composition absorbs and swells the liquid component, thereby increasing the viscosity of the curable composition and irreversibly. Solidified.
[0124]
Next, the semiconductor chip was polished from the back side together with the solidified curable composition. Polishing was performed using a lapping machine using a normal abrasive (free abrasive grains) until the thickness of the semiconductor chip reached 100 μm. After polishing, cleaning was performed. Next, a dividing line reaching the printed wiring board was formed at a desired position of the solidified curable composition. The method for forming the dividing line is the same as that in the first embodiment.
[0125]
This was heated at 170 ° C. for 2 hours while being pressurized at a pressure of 1 MPa using a pressure oven apparatus to cure the epoxy resin in the curable composition. Next, as shown in FIG. 6B, the printed wiring board was cut along the dividing line by router processing. Thus, a semiconductor chip built-in module provided with a circuit board as a thin interposer as shown in FIG. 6C was completed.
[0126]
As an evaluation of the reliability of this semiconductor chip built-in module, the above-described solder reflow test and temperature cycle test were performed. As a result, no cracks occurred in the semiconductor chip built-in module after the test, and no cracks were found in the built-in semiconductor chip even when observed with an ultrasonic flaw detector. Therefore, it was found that the semiconductor chip built-in module according to the present invention is highly reliable.
[0127]
【The invention's effect】
As described above, the semiconductor chip built-in module obtained by the present invention includes the thermosetting resin (A), the thermoplastic resin (B), the latent curing agent (C), and the inorganic filler (D). An insulating layer that is a curable composition, a wiring pattern, and a semiconductor chip that is disposed inside the insulating layer and mounted on the wiring pattern.
[0128]
According to the present invention, since the curable composition constituting the insulating layer in which the semiconductor chip is embedded has excellent bending strength, the reflow crack that is more likely to occur as the semiconductor chip built-in module becomes thinner is effectively prevented. can do. In addition, it has excellent mechanical strength and is a module with a built-in semiconductor chip that is resistant to external stress applied during handling and mounting, and thermal stress caused by the difference in thermal expansion between the semiconductor package and the mounted substrate after mounting. The structure is such that the chip is not destroyed.
[0129]
In addition, the above-described curable composition used in the present invention has a steep increase in primary viscosity due to the thermoplastic resin absorbing the liquid component by heat treatment below the activation temperature of the latent curing agent, and the potential. It has a steep second-order viscosity increase resulting from the rapid progress of the curing reaction above the active temperature of the curing agent. Due to this characteristic, the method for manufacturing a semiconductor chip built-in module according to the present invention can provide an ultra-thin semiconductor chip built-in module by embedding the semiconductor chip with a curable composition and then polishing in an uncured state. Is. Further, a shield layer can be formed in a batch on a plurality of semiconductor chip built-in modules, and a semiconductor chip built-in module having excellent high frequency characteristics can be easily realized.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor chip built-in module of the present invention.
FIG. 2 is a schematic cross-sectional view showing a step of solidifying a curable composition in the method for manufacturing a semiconductor chip built-in module according to one embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view showing a step of forming parting lines in the curable composition in the method for manufacturing a semiconductor chip built-in module according to one embodiment of the present invention.
FIG. 4 is a schematic cross-sectional view showing a process of curing to a curable composition and then dividing in the method of manufacturing a semiconductor chip built-in module according to one embodiment of the present invention.
FIG. 5 is a schematic cross-sectional view showing another embodiment of the method for manufacturing a semiconductor chip built-in module according to the present invention by process.
FIG. 6 is a schematic cross-sectional view showing still another embodiment of the method for manufacturing a semiconductor chip built-in module according to the present invention by process.
FIG. 7 is a graph schematically showing viscosity characteristics of the curable composition used in the present invention.
[Explanation of symbols]
100: Module with built-in semiconductor chip
101, 201, 301, 401, 501, 601 ... wiring pattern
102, 202, 302, 402, 502, 602... Semiconductor chip
103, 203, 303, 403, 503, 603 ... bump
104, 204, 304, 404, 504, 604 ... curable composition (insulating layer)
105, 405 ... Shield layer
206,306,406,506,606 ... Release carrier
305,407,505,605 ... division part
307, 507, 607 ... Dividing tool

Claims (16)

The insulating layer includes a wiring pattern and a semiconductor chip, and the insulating layer includes the wiring pattern on one surface of the insulating layer, and includes the semiconductor chip inside the insulating layer. A semiconductor chip is a method of manufacturing a module with a built-in semiconductor chip electrically connected,
(1) Electrically connecting the wiring pattern and the semiconductor chip by mounting a plurality of semiconductor chips face down on the wiring pattern formed on the surface of the support that is a release carrier having releasability. And a process of
(2) A curable composition comprising (A) a thermosetting resin which is liquid at room temperature, a resin composition containing (B) a latent curing agent and (C) a thermoplastic resin, and (D) an inorganic filler. Burying the semiconductor chip in an object,
(3) a step of solidifying the curable composition by heat treatment;
(4) Dividing into the support in the thickness direction of the solidified curable composition so as to define a plurality of semiconductor chip built-in modules each including the semiconductor chip in a state having the support Forming a line ;
(5) a step of further heating the solidified cured composition to cure the curable composition to form an insulating layer made of the cured composition;
(6) A method for producing a module with a built-in semiconductor chip, comprising: removing the release carrier from the cured composition to separate the cured composition according to the dividing line . The insulating layer includes a wiring pattern and a semiconductor chip, and the insulating layer includes the wiring pattern on one surface of the insulating layer, and includes the semiconductor chip inside the insulating layer. A semiconductor chip is a method of manufacturing a module with a built-in semiconductor chip electrically connected,
(1) A step of electrically connecting the wiring pattern and the semiconductor chip by mounting a plurality of semiconductor chips face down on the wiring pattern formed on the surface of a support that is a circuit board having the wiring pattern. When,
(2) A curable composition comprising (A) a thermosetting resin which is liquid at room temperature, a resin composition containing (B) a latent curing agent and (C) a thermoplastic resin, and (D) an inorganic filler. Burying the semiconductor chip in an object,
(3) a step of solidifying the curable composition by heat treatment;
(4) Dividing into the support in the thickness direction of the solidified curable composition so as to define a plurality of semiconductor chip built-in modules each including the semiconductor chip in a state having the support Forming a line ;
(5) a step of further heating the solidified cured composition to cure the curable composition to form an insulating layer made of the cured composition;
(6) A method for producing a module with a built-in semiconductor chip, comprising a step of dividing the cured composition according to a dividing line . The curable composition contains (B) a thermoplastic resin in an amount in the range of 10 to 100 parts by mass with respect to 100 parts by mass of the total amount of (A) thermosetting resin and (B) latent curing agent, The amount of the inorganic filler (D) in the range of 70 to 95 parts by mass with respect to the total amount of 5 to 30 parts by mass of (A) thermosetting resin, (B) latent curing agent, and (C) thermoplastic resin. The manufacturing method of the module with a built-in semiconductor chip of Claim 1 or 2 included in. The method for producing a module with a built-in semiconductor chip according to any one of claims 1 to 3 , wherein the thermoplastic resin is powdery when the thermosetting resin is uncured. The manufacturing method of the module with a built-in semiconductor chip according to claim 4 , wherein the thermosetting resin is an epoxy resin. The curable composition, when the temperature is increased from room temperature, before the thermosetting resin starts to cure, the solid state viscosity is increased, the semiconductor chip built-in module according to claim 1 Manufacturing method. The method for producing a module with a built-in semiconductor chip according to claim 6 , wherein the increase in viscosity leading to solidification of the curable composition is derived from the swelling of the liquid component absorbed by the thermoplastic resin. The manufacturing method of the module with a built-in semiconductor chip in any one of Claims 1-7 whose temperature which heat-processes a curable composition and solidifies is lower than the activation temperature of a latent hardening | curing agent. The viscosity of the curable composition is in the range of 10 to 100 Pa · s at room temperature, and the viscosity of the curable composition after solidifying the curable composition is 10,000 to 100,000 Pa · s at room temperature . 9. A method of manufacturing a semiconductor chip built-in module according to any one of 8 above. And burying the semiconductor chip into the curable composition, to implement a step of solidifying the curable composition by heating the curable composition in the same step, according to any one of claims 1 to 9 Manufacturing method of semiconductor chip built-in module. The step of embedding the semiconductor chip in the curable composition is performed by stacking a sheet made of the curable composition from the back side of the semiconductor chip mounted on the wiring pattern face down, and then heating and pressing. Item 11. A method for manufacturing a semiconductor chip built-in module according to any one of Items 1 to 10 . Burying the semiconductor chip to the curable composition, a paste of a curable composition, according to claim 1 which was dosed at a reduced pressure from the back side of the semiconductor chip mounted face down, carried out by heating The manufacturing method of the module with a built-in semiconductor chip in any one of -10 . After the step of solidifying, before the step of forming parting lines in the curable composition,
At least part of the buried semiconductor chip in the curable composition and the curable composition, a step of removing from the opposite side of the circuit forming surface of the semiconductor chip, according to any one of claims 1 to 12 Manufacturing method of semiconductor chip built-in module. 14. The method for manufacturing a module with a built-in semiconductor chip according to claim 13 , wherein at least a part of the curable composition and the semiconductor chip is removed by at least one selected from polishing, grinding, and cutting. In the dividing step, before dividing the cured composition according to the dividing line , a shield layer is formed on at least a part of the surface of the insulating layer covering the opposite surface and / or the side surface of the circuit formation surface of the semiconductor chip. The manufacturing method of the module with a built-in semiconductor chip in any one of Claims 1-14 . The method for manufacturing a module with a built-in semiconductor chip according to claim 15 , wherein the shield layer is formed by at least one selected from a plating method, a vapor deposition method, and a sputtering method.

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