JP2009033114A - Electronic module and method of manufacturing electronic module - Google Patents

Electronic module and method of manufacturing electronic module Download PDF

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Publication number
JP2009033114A
JP2009033114A JP2008153261A JP2008153261A JP2009033114A JP 2009033114 A JP2009033114 A JP 2009033114A JP 2008153261 A JP2008153261 A JP 2008153261A JP 2008153261 A JP2008153261 A JP 2008153261A JP 2009033114 A JP2009033114 A JP 2009033114A
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Prior art keywords
insulating layer
ground electrode
cutting
electronic module
electronic
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JP2008153261A
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Japanese (ja)
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Shigeru Asami
茂 浅見
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Tdk Corp
Tdk株式会社
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Priority to JP2007172088 priority Critical
Application filed by Tdk Corp, Tdk株式会社 filed Critical Tdk Corp
Priority to JP2008153261A priority patent/JP2009033114A/en
Priority claimed from EP08011741A external-priority patent/EP2009692A1/en
Publication of JP2009033114A publication Critical patent/JP2009033114A/en
Application status is Pending legal-status Critical

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    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic module, in which the mounting area of an electronic component can be increased and connection failure between a ground electrode and metal shield can be suppressed to sufficiently ensure the connection strength between the ground electrode and the conductive shield, and to provide a manufacturing method thereof. <P>SOLUTION: In an electronic module 100, an electronic component 60 is mounted on a multilayer substrate 1 incorporating a semiconductor device 30 and the like, and these are sealed with a sealing layer 110 made of an epoxy resin or the like, and further the sealing layer 110 and the multilayer substrate 1 are covered with a metal shield 120. The multilayer substrate 1 and the metal shield 120 are electrically connected via a ground electrode GN exposed by cutting away a portion of the multilayer substrate 1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an electronic module and a manufacturing method thereof.

  In recent years, along with miniaturization and high performance of electronic devices, there is a demand for miniaturization and high performance of mounted electronic modules. FIG. 11 is a perspective view showing a main part of a conventional electronic module 200, and FIG. 12 is a cross-sectional view of the electronic module 200 taken along line XII-XII.

  As shown in FIGS. 11 and 12, an electronic module 200 includes a circuit board 210 on which an electronic component 220 is mounted on at least one surface, a sealing layer 225 made of an epoxy resin or the like that covers the electronic component 220, and a sealing A metal shield 230 is provided so as to cover the layer 225. The metal shield 230 serves to stabilize the circuit characteristics by shielding electromagnetic waves from the outside and to normally operate the electronic component 220 such that the electromagnetic waves emitted from the electronic component 220 are not leaked to the outside.

  FIG. 13 is a top view of the circuit board 210 before the sealing layer 225 and the metal shield 230 are formed. As shown in the figure, a ground electrode 221 is formed on the peripheral edge of the circuit board 210. After covering this circuit board 210 with a sealing layer 225 made of an epoxy resin or the like, a portion of the sealing layer 225 on the ground electrode 221 is cut using a cutting blade such as a dicing blade or a cutting blade (not shown). Thus, the ground electrode 221 is exposed.

Then, a metal shield 230 is formed on the sealing layer 225 and the exposed ground electrode 221 by plating or the like, thereby electrically and mechanically connecting the ground electrode 221 and the metal shield 230 (for example, Patent Documents). 1).
JP 2004-193187 A

  However, in the conventional electronic module 200, since the ground electrode 221 is on the surface of the circuit board 210, the area area of the peripheral portion of the circuit board 210 is occupied by the ground electrode 221. There is a problem that the mounting area of the component 220 is limited. Furthermore, the conventional electronic module 200 has a sufficiently large exposed area of the ground electrode 221 in order to increase the connection reliability and connection strength between the metal shield 230 and the ground electrode 221 from the viewpoint of securing the mounting area of the electronic component 220. It is difficult to set, and the electrical and mechanical connection strength between the ground electrode 221 and the metal shield 230 may be insufficient.

  Furthermore, when cutting the sealing layer 225 using a cutting blade, the actual cutting position by the cutting blade is deviated from the target position set in the circuit board 210 due to the positional deviation of the circuit board 210, etc. As a result, the target ground electrode 221 is not exposed, and a problem such as a poor connection between the ground electrode 221 and the metal shield 230 may occur.

  Therefore, the present invention has been made in view of the above circumstances, can increase the mounting area of the electronic component, can sufficiently ensure the connection strength between the ground electrode and the conductive shield, An object of the present invention is to provide an electronic module capable of suppressing a connection failure between a ground electrode and a metal shield even when a cutting position shifts, and a method for manufacturing the same.

  In order to solve the above problems, an electronic module according to the present invention includes an insulating layer, a ground electrode provided in the insulating layer, a part of which is exposed from the side surface of the insulating layer, and an electron mounted on the insulating layer. A component, a sealing layer that seals the electronic component, and a conductive shield that covers the sealing layer and is electrically connected to the ground electrode at the exposed portion of the ground electrode.

  In an electronic module having such a configuration, an electronic component mounted on an insulating layer is sealed with a sealing layer, and the whole is covered with a conductive shield, and the conductive shield is partially exposed from the insulating layer. The electronic component is normally shielded (shielded) from the outside by being electrically connected to the ground electrode and, usually, the ground electrode is connected to a ground potential such as housing grounding. Thus, instead of connecting the ground electrode exposed on the substrate surface so as to cover the conductive shield, a part of the ground electrode is exposed from the side surface of the insulating layer and connected to the conductive shield at the exposed portion. Thus, the peripheral area for providing the ground electrode on the substrate surface, which is necessary in the conventional electronic module, is reduced. In other words, since the ground electrode and the conductive shield are connected at the outer edge below the mounting area of the electronic component, it is not necessary to separately secure the connection area between the two.

  Further, in order to expose the ground electrode from the side surface of the insulating layer, the insulating layer may be excavated or cut in the depth direction, and the surface of the ground electrode is exposed by removing the sealing layer according to the level in the depth direction. Compared to the conventional method, a part of the ground electrode is surely exposed, so the non-exposure of the ground electrode due to misalignment at the time of cutting, which is a concern with conventional electronic modules, is reliably eliminated, and the conductive shield Connection is ensured and connection failure between the two is prevented.

  Further, in an electronic module in which a passive component such as a resistor or a capacitor is mounted as an electronic component on a substrate module or the like in which an active component such as a semiconductor device (IC) is incorporated, a ground electrode is already provided in the insulating layer of the substrate module. In this case, the existing ground electrode in the substrate module can also be used as the ground electrode of the electronic module. As a result, it is not necessary to form a new ground electrode for shielding the electronic module, and the number of processes and components is reduced, so that productivity is significantly improved.

  Here, in the above configuration, it is preferable that a plurality of ground electrodes having exposed portions exist in the vertical direction of the insulating layer. By configuring the ground electrode so that there are a plurality of ground electrodes exposed in the vertical direction in this way, the exposed area of the ground electrode on the side surface of the insulating layer is expanded, and the connection strength with the conductive shield is further increased. It becomes possible.

In addition, it is preferable that the side surface of the exposed portion of the ground electrode on the side surface of the insulating layer has a predetermined inclination (taper) with respect to the normal direction of the insulating layer (direction perpendicular to the planar direction of the insulating layer; normal direction). If comprised in this way, since a ground electrode will be cut | disconnected diagonally, the exposed area is made larger than the exposed area at the time of cut | disconnecting a ground electrode perpendicularly. Therefore, the connection area between the ground electrode and the conductive shield is further increased.
Here, in the said structure, it is desirable for the bottom end part of an insulating layer to be located inside the end surface of an electroconductive shield. If comprised in this way, an insulating layer will protrude outside rather than an electroconductive shield, the effective area of a board | substrate can be enlarged, and it becomes possible to achieve size reduction of a module.

  The method for manufacturing an electronic module according to the present invention is a method for manufacturing a plurality of electronic modules including electronic components, the step of forming a ground electrode in the insulating layer, and the plurality of electronic modules on the insulating layer. A step of mounting the plurality of electronic components provided, a step of forming a sealing layer for sealing the plurality of electronic components on the insulating layer and the plurality of electronic components, and a part of the ground electrode is exposed from the side surface of the insulating layer. Thus, there are a step of cutting the insulating layer and the sealing layer, and a step of forming a conductive shield that covers the sealing layer and is electrically connected to the ground electrode at the exposed portion of the ground electrode. According to this configuration, the plurality of electronic modules according to the present invention can be effectively manufactured.

  Here, in the step of forming the ground electrode in the insulating layer, in the step of forming the ground electrode over at least two regions among the regions where each electronic module is formed and cutting the insulating layer and the sealing layer The insulating layer and the sealing layer are preferably cut so as to define a region where each electronic module is formed and so that a part of the ground electrode is exposed from the side surface of the insulating layer.

  According to such a configuration, not only can the plurality of electronic modules according to the present invention be effectively manufactured, but also the ground electrode extends over at least two regions of the regions where the electronic modules are formed. After forming and mounting a plurality of electronic components provided in a plurality of electronic modules and sealing the whole with a sealing layer, the insulating layer is cut so as to separate the individual electronic modules, and the ground electrode is divided and exposed, In this state, a conductive shield is formed on the whole of the plurality of electronic modules, and the shield is completed at one time, and then separated into individual pieces. Therefore, productivity can be improved. In addition, since it is not necessary to secure a connection area between the ground electrode and the conductive shield separately from the mounting area of the electronic component on the peripheral edge of the electronic module, the distance between the electronic module areas can be reduced. The arrangement density of the electronic modules on the common substrate is increased, and the productivity is further improved.

  At this time, in the step of forming the ground electrode, a plurality of ground electrodes are formed in the vertical direction of the insulating layer, and in the step of cutting the insulating layer and the sealing layer, the plurality of ground electrodes are exposed from the side surface of the insulating layer. It is preferable to cut as described above. For example, a plurality of insulating layers and a plurality of ground electrodes are alternately stacked, and the insulating layers are cut in the depth direction so that the plurality of ground electrodes are easily and reliably exposed from the side surface of the insulating layer. Can be.

  Further, in the step of cutting the insulating layer and the sealing layer, it is preferable to cut the exposed portion of the ground electrode on the side surface of the insulating layer so as to have a predetermined inclination (taper) with respect to the perpendicular direction of the insulating layer. Specifically, for example, dicing can be performed so that the tip of the cutting blade whose tip side wall has a spire shape (tapered shape) reaches the buried portion of the ground electrode in the insulating layer.

  The step of dividing the plurality of electronic modules into pieces includes a step of cutting and cutting from the surface opposite to the cut surface to the cutting position. In the step of cutting and cutting, the bottom of the insulating layer It is desirable to make a cut so that the end portion is located inside the end face of the conductive shield. According to this method, when the electronic module is separated into pieces, the cutting allowance protrudes outside the conductive shield, the substantial effective area of the substrate can be increased, and the module can be reduced in size. It becomes possible to plan. Here, in the step of cutting by cutting, it is preferable to cut using a cutting blade having a thickness greater than that of the cutting blade used for cutting.

  According to the electronic module and the manufacturing method thereof of the present invention, the conductive shield for shielding the electronic component and the ground electrode exposed on the side surface of the insulating layer are connected. In addition to reducing the formation area of the ground electrode and increasing the mounting area of the electronic component, it is possible to achieve further downsizing by high-density mounting, and to connect the ground electrode and the conductive shield reliably. Connection failure due to non-exposure can be prevented, and the reliability, yield, and productivity of the product can be improved.

  Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios in the drawings are not limited to the illustrated ratios. Further, the following embodiments are exemplifications for explaining the present invention, and are not intended to limit the present invention only to the embodiments. Further, the present invention can be variously modified without departing from the gist thereof.

First Embodiment FIG. 1 is a schematic cross-sectional view showing a main part of an electronic module according to this embodiment. The electronic module 100 includes a multilayer substrate 1 in which the electronic component 60 is mounted and the semiconductor device 30 and the like are incorporated, and a sealing layer 110 in which the electronic component 60 mounted on the multilayer substrate 1 is sealed with an epoxy resin or the like. And a metal shield 120 covering the sealing layer 110 and the multilayer substrate 1. The multilayer substrate 1 and the metal shield 120 are electrically connected by a ground electrode GN exposed by cutting a part of the multilayer substrate 1.

  The multilayer substrate 1 has a resin layer 41 formed on one surface (the lower surface in the drawing) of the base 10, and the semiconductor device 30 is embedded in the resin layer 41. A wiring 51 including a ground electrode GN is formed on the other surface (illustrated upper surface) of the base 10, and the semiconductor device 30 disposed on one surface of the base 10 and the other surface of the base 10 Are connected electrically at the connection site 13.

  A wiring 52 including a ground electrode GN is formed on the lower surface of the resin layer 41 in the figure (surface opposite to the base 10). The wiring 51 on the base 10 and the wiring 52 on the resin layer 41 are made of resin. They are electrically connected through vias 53 that penetrate the layer 41. A resin layer 42 is formed on the surface of the resin layer 41 on the wiring 52 side.

  Further, a resin layer 43 is formed on the surface of the base 10 on the wiring 51 side, and a wiring 56 is formed on the surface of the resin layer 43. The wiring 56 and the wiring 51 are electrically connected through a via 57 that penetrates the resin layer 43, and an electronic component 60 such as a resistor or a capacitor is installed in the wiring 56. Thus, the “resin layer” in the present invention is constituted by the resin layers 41, 42 and 43.

  Here, specific examples of materials used for the resin layers (insulating layers) 41, 42, and 43 include vinyl benzyl resin, polyvinyl benzyl ether compound resin, bismaleimide triazine resin (BT resin), and polyphenyl ether. (Polyphenylene ether oxide) resin (PPE, PPO), cyanate ester resin, epoxy + active ester cured resin, polyphenylene ether resin (polyphenylene oxide resin), curable polyolefin resin, benzocyclobutene resin, polyimide resin, aromatic polyester resin , Aromatic liquid crystal polyester resin, polyphenylene sulfide resin, polyetherimide resin, polyacrylate resin, polyether ether ketone resin, fluorine resin, epoxy resin, phenol resin or benzox A simple resin or a resin such as silica, talc, calcium carbonate, magnesium carbonate, aluminum hydroxide, magnesium hydroxide, aluminum borate whisker, potassium titanate fiber, alumina, glass flake, glass fiber, tantalum nitride In addition, a material to which aluminum nitride or the like is added, and to these resins, magnesium, silicon, titanium, zinc, calcium, strontium, zirconium, tin, neodymium, samarium, aluminum, bismuth, lead, lanthanum, lithium and tantalum A material in which a metal oxide powder containing one kind of metal is added, or a material in which a resin fiber such as a glass fiber or an aramid fiber is blended with these resins, or a glass cloth or an aramid fiber containing these resins. Material impregnated into non-woven fabric Etc. can be mentioned, electrical properties, mechanical properties, water absorption, from the viewpoint of reflow resistance, can be appropriately selected.

  FIG. 2 is a perspective view schematically showing the structure of the semiconductor device 30. The semiconductor device 30 is a bare-chip semiconductor IC (die) or the like, and has a large number of land electrodes 31 on a main surface 30a having a substantially rectangular plate shape. In the figure, land electrodes 31 and bumps 32 described later are displayed only at the four corners, and the display of other land electrodes 31 is omitted. Further, the type of the semiconductor device 30 is not particularly limited, and examples thereof include a digital IC having a very high operating frequency such as a CPU and a DSP.

  Further, although not particularly limited, the back surface 30b of the semiconductor device 30 is polished, so that the thickness t of the semiconductor device 30 (the distance from the main surface 30a to the back surface 30b) depends on the common semiconductor IC. For example, it is preferably 200 μm or less, more preferably about 20 to 50 μm. The back surface 30b is preferably subjected to a roughening process such as etching, plasma processing, laser processing, blast polishing, buff polishing, chemical processing, or the like in order to make the semiconductor device 30 thin.

  The back surface 30b of the semiconductor device 30 can be polished after being separated into individual semiconductor devices 30 by dicing. Note that a large number of electronic components may be polished together in a wafer state and then separated into individual semiconductor devices 30 by dicing. Alternatively, a large number of electronic components may be polished in a wafer state and then separated into individual semiconductor devices 30 by dicing, and then the individual electronic components may be polished to further reduce the thickness. .

  Each land electrode 31 is provided with a bump 32 (terminal) which is a kind of conductive protrusion. The type of the bump 32 is not particularly limited, and various bumps such as a stud bump, a plate bump, a plating bump, and a ball bump can be exemplified. In the drawing, a stud bump is illustrated. When stud bumps are used as the bumps 32, silver (Ag) or copper (Cu) can be formed by wire bonding, and when plate bumps are used, they can be formed by plating, sputtering or vapor deposition. . Further, in the case of using a plating bump, it can be formed by plating. In the case of using a ball bump, the solder ball is placed on the land electrode 31 and then melted or cream solder is applied to the land electrode. After printing on top, it can be formed by melting it. Further, it is also possible to use conical or cylindrical bumps obtained by screen-printing a conductive paste and curing it, or bumps obtained by printing a metal paste and sintering it by heating.

  The metal species that can be used for the bump 32 are not particularly limited. For example, gold (Au), silver (Ag), copper (Cu), nickel (Ni), tin (Sn), chromium (Cr), nickel A chromium alloy, solder, etc. are mentioned, Among these, it is preferable to use copper. When copper is used as the material of the bumps 32, for example, compared with the case where gold is used, it is possible to obtain a high bonding strength with respect to the land electrode 31, and the reliability of the semiconductor device 30 itself is improved.

  Further, the size and shape of the bumps 32 can be appropriately set according to the interval (pitch) between the land electrodes 31. For example, when the pitch of the land electrodes 31 is about 100 μm, the maximum diameter of the bumps 32 is set. What is necessary is just to make about 10-90 micrometers and height into about 2-100 micrometers. The bumps 32 can be cut and separated into individual semiconductor devices 30 by wafer dicing, and then bonded to each land electrode 31 using a wire bonder.

  The semiconductor device 30 having such a configuration is disposed inside the resin layer 41 in a state where each bump 32 is electrically connected to the wiring 51 in the connection portion 13 (FIG. 1).

  Next, a method for manufacturing a plurality of electronic modules 100 according to this embodiment in a lump will be described with reference to FIGS. In each figure, a cutting reference line S for dividing each electronic module 100 is indicated by a one-dot chain line.

  First, a plurality of multilayer substrates 1 shown in FIG. 1 are connected to form an aggregate multilayer substrate 1a (see FIG. 3). Here, FIG. 7 is a plan view illustrating the relationship between the ground electrode GN formed on the wirings 51 and 52 and the cutting reference line S. As shown in FIG. 7, the electrode width W0 of the ground electrode GN formed in the wirings 51, 52, etc. is designed wider than the wiring width, and in this embodiment, the wiring 51 of the adjacent multilayer substrate 1 is used. , 52, the ground electrode GN is formed. In other words, the aggregate multilayer substrate 1a including the ground electrode GN straddling the adjacent multilayer substrate 1 is formed. In this way, by forming the ground electrode GN, even if the actual cutting position is deviated from the cutting reference line S, the ground electrode GN can be surely provided that the deviation is within the electrode width W0 of the ground electrode GN. Can be exposed. As a result, a part of the ground electrode is more reliably exposed than in the conventional case where the sealing layer is removed by adjusting the level in the depth direction and the surface of the ground electrode is exposed. Thus, the non-exposure of the ground electrode due to the misalignment at the time of cutting is reliably eliminated, the connection with the conductive shield is ensured, and the connection failure between them is prevented.

  Next, as shown in FIG. 4, a sealing layer 110 made of an epoxy resin is formed so as to cover the electronic component 60 mounted on the surface of the collective multilayer substrate 1a. The sealing layer 110 includes, for example, an epoxy resin of about 500 to 100 Pa · s, a filler having an average particle size of 100 μm or less, and a curing agent. As the filler, inorganic substances such as silica and aluminum hydroxide are used. Further, as the curing agent, an acid anhydride, an amine curing agent or the like is selected according to the mechanical characteristics of the electronic component 60 and used.

Then, the sealing layer 110 made of epoxy resin is supplied to the periphery of the electronic component 60 using a fixed frame and a squeegee (not shown), and then defoamed using a vacuum chamber. Specifically, defoaming can be performed by setting the vacuum degree of the vacuum chamber to 1.0 × 10 2 Pa or less.

Here, in order to further eliminate the air bubbles contained in the epoxy resin, supply the epoxy resin in a vacuum chamber of 1.0 × 10 2 Pa or less in a vacuum chamber before supplying the epoxy resin. Just do it.

Thereafter, the vacuum degree of the vacuum chamber is set to 1.0 × 10 4 Pa or more. By lowering the degree of vacuum in this way, bubbles in the paste can be eliminated due to the differential pressure from the initial degree of vacuum.

  When the supply and defoaming of the epoxy resin are completed, the sealing layer 110 made of the epoxy resin is cured by being left in a furnace at 100 ° C. for 1 hour and further in a furnace at 150 ° C. for 3 hours. By performing the two-stage curing in this way, the curing of the sealing layer 110 is gradually advanced, and the internal stress due to the thermal expansion coefficient difference between the sealing layer 110 and the aggregate multilayer substrate 1a and the curing shrinkage of the sealing layer 110 is alleviated. Yes. As a result, it is possible to reduce the warpage of the aggregate multilayer substrate 1a and improve the reliability of the thermal cycle and the like.

  Further, the sealing layer 110 is cured by being left in the furnace at 150 ° C. for 3 hours, and then cooled at 0.5 ° C./min or less. Thus, the temperature of the aggregate multilayer substrate 1a can be further reduced by gradually decreasing the temperature.

  Next, as shown in FIG. 5, the sealing layer 110 and the multilayer multilayer substrate 1 a are formed in a V shape in cross-section (see the inclination angle α shown in FIG. 5) according to the cutting reference line S using a dicing blade or the like. By cutting, at least a part of the ground electrode GN is exposed. Thus, the exposed area of the ground electrode GN is increased by cutting with a predetermined inclination angle α with respect to the cutting reference line (perpendicular direction of the multilayer substrate) S. As described above, the exposed portion of the ground electrode GN is connected to the metal shield. Therefore, the connection strength with the metal shield can be increased by increasing the exposed area of the ground electrode GN. In this step, each multilayer substrate 1 is not completely separated by cutting, but the depth of the groove formed by cutting is set within a range where the ground electrode GN can be exposed (see FIG. 5).

  Here, FIG. 8 is a partially enlarged view of the cut surface of the multilayer substrate 1 (side surface of the multilayer substrate). As shown in FIG. 8, in this embodiment, the ground electrode GN having the line width w <b> 1 is exposed on the upper layer of the substrate 10, and the ground electrode GN having the line width w <b> 2 is exposed on the lower layer of the resin layer 41. As described above, a plurality of ground electrodes GN exposed in the vertical direction of the insulating layer such as the resin layer 41 exist (in other words, a plurality of exposed portions of the ground electrode GN exist in the vertical direction of the insulating layer). As a result, the exposed area of the ground electrode GN on the side surface of the insulating layer is enlarged, and the connection strength with the metal shield can be further increased. When cutting with a dicing blade or the like, the inclination angle α is set so that the ground electrode GN having a desired line width is exposed (so that an exposed area of the desired ground electrode GN can be obtained). It ’s fine.

  Next, as shown in FIG. 6, a metal shield (conductive shield) 120 is formed by plating on the multilayer substrate 1 where the sealing layer 110 and the ground electrode GN are exposed. Thereby, the metal shield 120 and the ground electrode GN are electrically connected and a shielding effect is obtained.

  More specifically, first, nucleation with Pd is performed on the surface of the sealing layer 110, and a copper plating of 0.5 μm is formed by an electroless method. Further, copper plating is performed by an electrolytic method to form a dense 10 μm copper-plated metal shield 120 on the surface of the sealing layer 110. Here, as a metal material forming the metal shield 120, a material having high conductivity such as silver (Ag) can be used in addition to copper (Cu). By using such a metal material to reduce the conductor resistance of the metal shield 120, a good shielding effect can be obtained.

  Here, the electroless plating is characterized in that a plating can be formed on an insulator and a film can be uniformly formed on a portion where the plating solution is wet. However, the film formation speed is slow and it is difficult to form a thickness of 3 μm or more. Further, when the film thickness is increased, the internal stress increases and the interface between the mold resin layer and the plating layer is easily peeled off. Therefore, in the present embodiment, high quality is ensured at low cost by combining electrolytic plating capable of forming a thick film with a high plating growth rate.

  The film thickness of the metal shield 120 to be formed is preferably about 1 micron or more. The metal shield 120 is formed by forming a copper metal shield 120 on the surface of the sealing layer 110 by electroless plating, and further forming a copper metal shield 120 on the surface by electrolytic plating to further refine the metal shield 120. By doing so, the connection effect of the ground electrode GN is lowered, and the ground potential of the metal shield 120 formed in the sealing layer 110 is stabilized, thereby enhancing the shielding effect.

  After the metal shield 120 is formed in this way, the multilayer substrate 1 is separated into pieces along the cutting reference line S, whereby a plurality of electronic modules 100 shown in FIG. 1 are formed. Note that when the multilayer substrate 1 (that is, the electronic module 100) is separated into pieces, the grooves have already been formed by cutting, and therefore can be separated into pieces without using a cutting blade such as a dicing blade. Of course, the multilayer substrate 1 may be separated into pieces using a cutting blade such as a dicing blade.

  As described above, according to the electronic module 100 and the manufacturing method thereof according to the present embodiment, the ground electrode exposed on the substrate surface is not connected so as to cover the conductive shield as in the prior art, but instead of being connected to the ground electrode GN. Part is exposed from the side surface of the insulating layer such as the resin layers 41, 42, 43, etc., and is connected to a metal shield 120 as a conductive shield at the exposed portion, so that on the surface of the substrate required in the conventional electronic module The peripheral area for providing the ground electrode is reduced. In other words, since the ground electrode and the conductive shield are connected at the outer edge below the mounting area of the electronic component, it is not necessary to separately secure the connection area between the two.

  In the present embodiment, the ground electrode GN is exposed from the side surface of the insulating layer by cutting the insulating layers such as the resin layers 41, 42, and 43 in the depth direction. Therefore, a part of the ground electrode GN is surely exposed as compared with the conventional case where the surface of the ground electrode is exposed by removing the sealing layer by matching the level in the depth direction. The non-exposure of the ground electrode due to the misalignment at the time of cutting, which is a concern, is reliably eliminated, the connection with the conductive shield is ensured, and the connection failure between them is prevented.

  In the present embodiment, the side surface of the exposed portion of the ground electrode GN on the side surface of the insulating layer such as the resin layers 41, 42, and 43 is perpendicular to the insulating layer (direction perpendicular to the planar direction of the insulating layer; normal direction). The substrate is cut so as to have a predetermined inclination (taper) with respect to. As a result, the ground electrode GN is cut obliquely so that the exposed area is larger than the exposed area when the ground electrode GN is cut vertically, and the connection area between the ground electrode GN and the conductive shield is further increased. Is done.

  Further, in the present embodiment, when the ground electrode GN is exposed from the side surface of the insulating layer, the ground electrode GN is formed by cutting after reaching the buried portion of the ground electrode GN in the insulating layer such as the resin layers 41, 42, and 43. Each electronic module is separated into pieces by, for example, folding along the groove. On the other hand, in the conventional configuration, after cutting the substrate to expose the ground electrode on the surface of the substrate, when individualizing each electronic module, the reference position set to separate the electronic module again is used. In addition, since it is necessary to cut the substrate at the same time, in this embodiment, the process of dividing the electronic module into pieces is simplified, and the productivity is remarkably improved.

  In addition, as above-mentioned, this invention is not limited to said each embodiment, In the range which does not deviate from the summary, it can add suitably. For example, in the embodiment described above, the case where the exposed area of the ground electrode GN is changed depending on the inclination angle α at which the multilayer substrate 1 is cut has been described. The exposed area of the ground electrode GN may be changed depending on the thickness (see FIG. 8). In this case, if the desired exposed area of the ground electrode GN can be obtained by changing the number of ground electrodes GN to be exposed and the film thickness of the ground electrode GN, it is not inclined (that is, at an inclination angle α = 0 °). You may cut. Of course, the exposed area of the ground electrode GN may be changed by appropriately combining these. As the ground electrode GN to be exposed, the ground electrode of the electronic component 60 mounted on each multilayer substrate 1 is used, and the ground electrode of the built-in semiconductor device 30 is used. Any ground electrode can be used.

  Further, instead of the metal shield 120 having a substantially uniform film thickness, a metal shield 120 'having a different film thickness may be formed as shown in FIG. FIG. 10 is a process diagram showing an example of the manufacturing procedure of the electronic module according to the second modification, and corresponds to FIG. Note that portions corresponding to those in FIG. 6 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 10, a metal shield 120 'having a substantially constant height h is formed on the multilayer substrate 1 from which the sealing layer 110 and the ground electrode GN are exposed by using a vapor deposition method, a sputtering method, or the like. After such a metal shield 120 'is formed, it is cut along the cutting reference line S using a cutting blade such as a dicing blade. As a result, it is possible to form an electronic module 100 ′ that is resistant to impact from side surfaces having different film thicknesses in accordance with the parts as shown in FIG. 9.

  Further, instead of the metal shield 120 formed of a metal film using a metal material such as copper, the metal shield 120 is formed by a substantially box-shaped metal cap using a metal material such as 42 alloy, Kovar, phosphor bronze, or iron. May be formed.

  Furthermore, for the metal shield 120, the environmental resistance of the module component may be improved by forming a rust prevention layer on the surface of the metal film. As the rust prevention layer, a resin that can withstand reflow may be used as a coating material. For example, a metal layer such as Sn or Ni may be formed by a plating method, a sputtering method, or the like in order to improve the bonding property to the wiring board by solder. Good. Furthermore, the ground electrode GN may be provided in only one layer instead of a plurality of layers, and another wiring layer other than the ground electrode GN in the multilayer substrate 1 may be formed.

Second Embodiment FIG. 14 is a diagram showing a schematic configuration of an electronic module 100 formed by a process of dividing a multilayer substrate according to the first embodiment and a modification, and FIG. 15 is related to the second embodiment. It is a figure which shows schematic structure of the electronic module 100a formed by the division | segmentation process of a multilayer substrate. In the following description, the substrate surface on which electronic components are mounted is referred to as the front surface, and the opposite substrate surface is referred to as the back surface.

  In the first embodiment, a dicing blade or the like is used to cut (so-called half cut) so as to expose a part of the ground electrode GN in accordance with the cutting reference line S without completely separating from the multilayer substrate, so that the sealing layer After forming 110, the metal shield 120, etc., it is cut into pieces by cutting (so-called full cut) or folding according to the cutting reference line S from the upper part of the substrate. As a result, a plurality of individual electronic modules 100 are formed. As shown in FIG. 14, the bottom of each individual electronic module 100 protrudes outward by the cutting allowance Sd. Therefore, for example, as shown in FIG. 14, even if the width of the electronic module 100 is defined as W0, the width of the electronic module 100 is increased by the cutting allowance Sd, resulting in an increase in size. For this reason, when actually designing the electronic module 100, it is necessary to consider the cutting allowance Sd, the effective area of the substrate is reduced, and it is difficult to reduce the size of the module.

  Therefore, in the second embodiment, after performing a half cut so as to expose a part of the ground electrode GN along the cutting reference line S from the surface of the substrate, the blade thickness is larger than the cutting blade used in the half cut. A thick cutting blade is used to cut from the back surface to the half-cut position to perform a full cut (see FIG. 15). By separating the electronic modules in this way, the bottom end portion 90 of each electronic module is positioned inside the end portion of the metal shield 120. Therefore, since the dimensions of the electronic module 100 can be defined without considering the cutting allowance Sd protruding outward from the metal shield 120 as shown in FIG. 14, the substantial effective area of the substrate can be increased. This makes it possible to reduce the size of the module.

Hereinafter, a method of manufacturing a plurality of electronic modules 100a according to the present embodiment in a lump will be described with reference to FIGS. In each figure, a cutting reference line S for dividing each electronic module 100a is indicated by a one-dot chain line.
When the aggregate multilayer substrate 1a on which the electronic component 60 is mounted as shown in FIG. 16 is formed, a resist 56a is formed so as to cover the wiring 56 of the electronic component 60 mounted on the surface of the aggregate multilayer substrate 1a as shown in FIG. After the formation, a sealing layer 110 made of an epoxy resin is formed so as to cover the entire electronic component 60.

Next, the assembled multilayer substrate 1a is half-cut along the reference line S using a dicing blade to form a recess 70 having a depth Dc (see FIG. 18). The depth Dc of the recess 70 is set as long as the depth Db is set to be deeper than the depth Db at which a part of the ground electrodes GN that are inner layers of the aggregate multilayer substrate 1a are exposed as shown in the formula (1). You may do it.
Dc> Db (1)

  In this way, by controlling the cutting by the dicing blade so that an exposed portion is generated in the inner ground electrode GN, it becomes possible to connect the ground electrode GN and the metal shield 120 described later on the side surface.

  Then, a plating process by an electroless method is performed on the aggregate multilayer substrate 1a in which the recesses 70 are formed to form a conductive power supply film (not shown) having a plating thickness of about 1 μm, for example, and then the aggregate multilayer by an electroless method. A copper plating of 0.5 μm is formed on the substrate 1a. Further, copper plating is performed by an electrolytic method to form a dense 20 μm copper-plated metal shield 120 on the surface of the sealing layer 110 (see FIG. 19).

Thereafter, in order to divide the electronic module 1 into pieces, a full cut is performed using a dicing blade. Here, FIG. 20 is a diagram illustrating an individualization process according to the first embodiment, and FIG. 21 is a diagram illustrating an individualization process according to the second embodiment. As shown in FIG. 20, when a full cut is performed from the surface using a cutting blade whose thickness is thinner than the cutting blade used at the time of half-cutting (see formula (2)), each individual electronic module The bottom of 100 protrudes outward by the cutting allowance Sd (see FIG. 14).
Wm0> Wm1 (2)
Wm0: Blade thickness when half-cut Wm1: Blade thickness when full-cut from the surface

  When separated into individual pieces by such a method, the size of the electronic module 100 is increased by the cutting allowance Sd. Here, in order to reduce the cutting allowance Sd, it is conceivable to increase the blade thickness of the cutting blade used during full cutting, but when the blade thickness is increased, the side surface of the cutting blade contacts the metal shield 120 during cutting, There are concerns about problems such as loss of shielding effectiveness.

Therefore, in the second embodiment, as shown in FIG. 21, full cutting is performed from the back surface using a cutting blade having a blade thickness thicker than the cutting blade used at the time of half-cutting (see formula (3)). When performing full cut, similarly to half cut, cutting is performed by cutting from the back surface to the half cut position along the reference line S. When full cut is performed, a full cut reference line may be separately marked on the back surface of the aggregate multilayer substrate 1a, and the cut may be performed along the marked reference line.
Wm0 <Wm2 (3)
Wm0: Blade thickness when half-cut Wm2: Blade thickness when full-cut from the back

  By separating the electronic modules 100 in this way, the bottom end portion 90 of each electronic module 100 is positioned inside the end portion of the metal shield 120 as shown in FIG. Therefore, since the dimensions of the electronic module 100 can be defined without considering the cutting allowance Sd protruding outward from the metal shield 120 as shown in FIG. 14, the substantial effective area of the substrate can be increased. This makes it possible to reduce the size of the module. Further, when the electronic module is separated after the connection terminals are provided on the back surface of the collective multilayer substrate 1a, the electronic module is not damaged by performing a full cut from the back surface of the collective multilayer substrate 1a. Can be singulated.

  In the embodiment described above, the case where full cutting is performed from the back surface using a cutting blade having a blade thickness thicker than the cutting blade used at the time of half-cutting is described, but the bottom end portion 90 of each electronic module 100 is formed of the metal shield 120. Any cutting blade may be used as long as it can be cut so as to be located inside the end.

  For example, even if a cutting blade having a thinner blade thickness than the cutting blade used for half-cutting is used as the cutting blade for full cutting, it is performed twice from the back surface to the half-cut position so that a part of the ground electrode GN is exposed. By cutting (see FIG. 22), an electronic module 100 as shown in FIG. 15 can be obtained. Further, if a special cutting blade having a concave section is used, it is possible to obtain an electronic module as shown in FIG. 15 with a single cut.

  Furthermore, in the above-described embodiment, the half cut is performed so that the exposed portion side surface of the ground electrode GN is perpendicular to the planar direction of the insulating layer (see, for example, FIG. 21). Similarly, half-cut is performed so that the exposed side surface of the ground electrode GN has a predetermined inclination (taper) with respect to the perpendicular direction of the insulating layer (the direction perpendicular to the planar direction of the insulating layer; the normal direction). Alternatively, a sealing layer 110, a metal shield 120, etc. may be formed, and finally a full cut may be performed from the back surface (see FIG. 23).

  As described above, according to the present invention, since the conductive shield for shielding the electronic component and the ground electrode exposed on the side surface of the insulating layer are connected, the ground electrode provided on the peripheral portion of the conventional substrate is connected. As a result, it is possible to reduce the formation area and increase the mounting area of electronic components to achieve further miniaturization by high-density mounting, and to securely connect the ground electrode and the conductive shield, and also because the ground electrode is not exposed. Since it is possible to prevent poor connection and improve product reliability, yield, and productivity, devices, devices, and systems incorporating active components such as semiconductor devices and / or passive components such as resistors and capacitors It can be widely and effectively used for the manufacture of various devices such as those that are particularly required to be small and have high performance.

It is a schematic sectional drawing which shows the principal part of the electronic module which concerns on this embodiment. 1 is a perspective view schematically showing a structure of a semiconductor device. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is the top view which illustrated the relationship between a ground electrode and a cutting reference line. It is the elements on larger scale of the cutting surface of a multilayer substrate. It is a schematic sectional drawing which shows the principal part of the electronic module which concerns on a modification. It is process drawing which shows the other example of the procedure which manufactures an electronic module. It is a perspective view which shows the principal part of the conventional electronic module. It is XII-XII sectional view taken on the line of the electronic module shown in FIG. It is a top view which shows the principal part of a circuit board. It is a schematic sectional drawing of the electronic module formed by an individualization process. It is a schematic sectional drawing of the electronic module formed by an individualization process. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module. It is process drawing which shows an example of the procedure which manufactures an electronic module.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Multilayer substrate, 1a ... Assembly multilayer substrate, 10 ... Base | substrate, 11, 11a ... Resin layer, 12 ... Conductor, 13 ... Connection part, 30 ... Semiconductor device, 30a ... Main surface, 30b ... Back surface, 31 ... Land electrode, GN: ground electrode, 32: bump, 41, 42, 43 ... resin layer, 51, 52 ... wiring, 60 ... electronic component, 100, 100 '... electronic module, 110 ... sealing layer, 120, 120' ... metal shield .

Claims (10)

  1. An insulating layer;
    A ground electrode provided in the insulating layer and partially exposed from a side surface of the insulating layer;
    An electronic component mounted on the insulating layer;
    A sealing layer for sealing the electronic component;
    A conductive shield that covers the sealing layer and is electrically connected to the ground electrode at an exposed portion of the ground electrode;
    An electronic module comprising:
  2.   The electronic module according to claim 1, wherein a plurality of ground electrodes having the exposed portion are present in a direction perpendicular to the insulating layer.
  3. The exposed portion of the ground electrode on the side surface of the insulating layer has an inclination with respect to the perpendicular direction of the insulating layer.
    The electronic module according to claim 1 or 2.
  4. A method of manufacturing a plurality of electronic modules comprising electronic components,
    Forming a ground electrode in the insulating layer;
    Mounting a plurality of electronic components included in the plurality of electronic modules on the insulating layer;
    Forming a sealing layer for sealing the plurality of electronic components on the insulating layer and the plurality of electronic components;
    Cutting the insulating layer and the sealing layer such that a part of the ground electrode is exposed from the side surface of the insulating layer;
    Covering the sealing layer and forming a conductive shield electrically connected to the ground electrode at an exposed portion of the ground electrode;
    Dividing the plurality of electronic modules into pieces,
    Manufacturing method of electronic module having
  5. In the step of forming a ground electrode in the insulating layer, a ground electrode straddling at least two of the regions where the electronic modules are formed is formed,
    In the step of cutting the insulating layer and the sealing layer, so as to define a region where each electronic module is formed and so that a part of the ground electrode is exposed from the side surface of the insulating layer. Cutting the insulating layer and the sealing layer;
    The manufacturing method of the electronic module of Claim 4.
  6. In the step of forming the ground electrode, a plurality of the ground electrodes are formed in a direction perpendicular to the insulating layer,
    In the step of cutting the insulating layer and the sealing layer, cutting so that the plurality of ground electrodes are exposed from the side surface of the insulating layer,
    The manufacturing method of the electronic module of Claim 4 or 5.
  7. In the step of cutting the insulating layer and the sealing layer, cutting is performed so that the exposed portion of the ground electrode on the side surface of the insulating layer has an inclination with respect to the normal direction of the insulating layer.
    The manufacturing method of the electronic module of any one of Claims 4 thru | or 6.
  8. The step of separating the plurality of electronic modules includes a step of cutting by cutting from a surface opposite to the cut surface to the cutting position,
    8. The method according to claim 4, wherein, in the step of cutting by making the cut, the cut is made so that a bottom end portion of the insulating layer is located inside an end face of the conductive shield. The manufacturing method of the electronic module as described in 1 ..
  9.   The method of manufacturing an electronic module according to claim 8, wherein in the step of cutting by inserting the incision, the incision is made by using a cutting blade having a blade thickness larger than that of the cutting blade used for the cutting.
  10.   The electronic module according to any one of claims 1 to 3, wherein a bottom end portion of the insulating layer is located on an inner side than an end face of the conductive shield.
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