JP4072816B2 - Composite module and manufacturing method thereof - Google Patents

Composite module and manufacturing method thereof Download PDF

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Publication number
JP4072816B2
JP4072816B2 JP2002231598A JP2002231598A JP4072816B2 JP 4072816 B2 JP4072816 B2 JP 4072816B2 JP 2002231598 A JP2002231598 A JP 2002231598A JP 2002231598 A JP2002231598 A JP 2002231598A JP 4072816 B2 JP4072816 B2 JP 4072816B2
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semiconductor substrate
composite module
mounting surface
integrated circuit
post electrode
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JP2004071961A (en
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芳規 鈴木
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Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
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    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Description

【0001】
【発明の属する技術分野】
本発明は、複合モジュール及びその製造方法に関し、特に、複合モジュール及びその製造方法に関する。
【0002】
【従来の技術】
異種材料の薄膜を積層して形成した薄膜回路、ICチップ等の集積回路、薄膜回路では形成が困難なコンデンサ、抵抗等の受動部品等をシリコンウェハなどの半導体基板上に実装し、モールド樹脂を用いて樹脂封止を行った複合モジュールが様々な分野で広く用いられており、このような複合モジュールは、例えば、図9に示すように、次のような工程を用いて形成されていた。
【0003】
まず、図9(a)に示すように、シリコンウェハ20の表面に絶縁層である酸化膜21を形成し、この酸化膜21上にスパッタリング等を用いて異種材料薄膜を積層し、図示しない薄膜回路を形成すると共に、Al、Cu、Au、Ptなどの導電性金属からなる配線22を形成する。
【0004】
次に、図9(b)に示すように、配線22上の所定の位置にICチップ23、及びコンデンサ、抵抗等の受動部品24を搭載し、ポリイミドなどのモールド樹脂25を用いて樹脂封止を行う。
【0005】
ここで、図9(c)に示すように、ICチップ23や受動部品24を搭載したシリコンウェハ20の面とは反対側の下面側から所定の位置にエッチングを施し、配線22が露出した接続孔26を形成する。
【0006】
そして、図9(d)に示すように、接続孔26の内壁に酸化膜などの絶縁層27を形成した後、導電性金属を充填して接続端子28を形成した後、シリコンウェハ20をダイシング分離して、複合モジュールを作成していた。
【0007】
このようにして形成された複合モジュール29は、図10に示すように、図示しない外部引き出し端子が形成されたインターポーザ基板30に搭載され、また、複合モジュール29を覆うように金属シールドケース31をインターポーザ基板30上に設けることにより、シールド効果を得ていた。
【0008】
【発明が解決しようとする課題】
しかし、このような複合モジュールでは、外部との接続端子を設けるため、エッチングを施して接続孔を形成する必要があり、製造工程、及びコストの削減を妨げていた。
【0009】
また、シリコンウェハをエッチングして形成した接続孔の内壁には、p型若しくはn型の導体層であるシリコンが露出するため、酸化膜など、絶縁層を設ける必要があった。
【0010】
そして、インターポーザ基板に複合モジュールを搭載し、金属シールドケースで複合モジュールを覆うため、複合モジュールを回路基板に実装する際には、少なくとも、インターポーザ基板を実装することが可能な実装面積が必要であり、複合モジュールの実装面積を抑えることは困難であった。
【0011】
また、金属シールドケースで複合モジュールを覆うため、高さ方向に対して、複合モジュールのICチップや受動部品等と金属シールドケースとの間に一定の距離を確保する必要があり、複合モジュールを実装する際の厚みを抑えることを妨げていた。
【0012】
なお、複合モジュールを実装する回路基板に、インターポーザ基板を用いることなく複合モジュールを直接実装する方法もあるが、金属シールドケースを設けるための面積を回路基板上に確保すると共に、金属シールドケースと複合モジュールとの間にある一定の距離を確保する必要があった。
【0013】
そこで本発明では、複合モジュール及びその製造方法において、シリコンウェハを貫通する接続孔を設けることなく、また、金属シールドケースを用いることなく良好なシールド特性を得ることが可能な複合モジュール及びその製造方法を提供することを目的とする。
【0014】
本発明に係る複合モジュールは、半導体基板上に形成された配線上に集積回路、及び受動部品を実装し、外部接続端子を介して外部と接続する複合モジュールにおいて、前記集積回路、及び前記受動部品を実装した前記半導体基板の実装面に形成されたポスト電極と、前記実装面の前記絶縁層に形成された接続孔と、前記集積回路及び前記受動部品の周囲に形成され、前記半導体基板と前記接続孔を介して接続し、該半導体基板をグランドとするグランド結線を成した導電体からなる導電層と、前記実装面に塗付されて樹脂封止を施しているモールド樹脂と、前記モールド樹脂から露出した前記ポスト電極を介して外部と接続する外部接続端子とを具備することを特徴とする。
【0015】
そして、前記半導体基板は、p型、若しくはn型のシリコンウェハであることが望ましい
【0016】
また、本発明に係る複合モジュールは、絶縁性材料からなる基板上に形成された配線上に集積回路、及び受動部品を実装し、外部接続端子を介して外部と接続する複合モジュールにおいて、前記集積回路、及び前記受動部品を実装した前記基板の実装面に形成されたポスト電極と、前記基板の実装面に導電性材料を用いて形成されたグランドとなる回路と、前記回路とグランド結線を成し、前記集積回路、及び前記受動部品の周囲に形成された導電体からなる導電層と、前記実装面に塗付されて樹脂封止を施しているモールド樹脂と、前記モールド樹脂から露出した前記ポスト電極を介して外部と接続する外部接続端子とを具備することを特徴とする
【0017】
ここで、前記導電層を構成する前記導電体及び前記ポスト電極は、ワイヤからなることが望ましい。
【0018】
次に、本発明に係る複合モジュールの製造方法は、半導体基板上に形成された配線上に集積回路、及び受動部品を実装し、外部接続端子を介して外部と接続する複合モジュールの製造方法において、前記半導体基板の、前記集積回路及び受動部品を実装する実装面に形成されている絶縁層に該半導体基板が露出する接続孔を形成する工程と、前記半導体基板の実装面に前記集積回路及び受動部品を実装する工程と、前記半導体基板の実装面にポスト電極を形成する工程と、前記半導体基板上に実装された前記集積回路、及び前記受動部品の周囲に、前記接続孔を介して前記半導体基板をグランドするグランド結線を成す導電体からなる導電層を形成する工程と、前記ポスト電極、及び前記導電層がモールド樹脂に埋まる厚さで前記実装面側から樹脂封止する工程と、前記モールド樹脂を研削して少なくとも前記ポスト電極、及び前記導電層が露出する平坦な研削面を形成する工程と、前記研削面側から前記ポスト電極、又は前記導電層を介して外部と接続する外部接続端子を形成する工程とを備えることを特徴とする。
【0019】
そして、前記半導体基板は、シリコンウェハであり、前記接続孔は、p型、若しくはn型の前記シリコンウェハ露出させることが望ましい
【0020】
また、本発明に係る複合モジュールの製造方法は、絶縁性材料からなる基板上に形成された配線上に集積回路、及び受動部品を実装し、外部接続端子を介して外部と接続する複合モジュールの製造方法において、前記集積回路、及び受動部品を実装する前記基板の実装面に導電性材料を用いてグランドとなる回路を形成する工程と、前記回路上に形成されたパッシベーション膜を介して、前記基板の実装面に前記集積回路、及び受動部品を実装する工程と、前記基板の実装面に前記回路が露出する接続孔を形成する工程と、前記基板の実装面にポスト電極を形成する工程と、前記基板上に実装された前記集積回路、及び前記受動部品の周囲に、前記接続孔を介して前記回路とグランド結線を成す導電体からなる導電層を形成する工程と、前記ポスト電極、及び前記導電層がモールド樹脂に埋まる厚さで前記実装面側から樹脂封止する工程と、前記モールド樹脂を研削して少なくとも前記ポスト電極、及び前記導電層が露出する平坦な研削面を形成する工程と、前記研削面側から前記ポスト電極、又は前記導電層を介して外部と接続する外部接続端子を形成する工程とを備えることを特徴とする
【0021】
ここで、前記導電層を構成する前記導電体及び前記ポスト電極は、ワイヤを用いて形成することが望ましい。
【0022】
【発明の実施の形態】
以下、本発明に係わる複合モジュール及びその製造方法の実施の形態を添付図面を参照して詳細に説明する。
【0023】
図1は、本発明に係る複合モジュールの構成の一例を示す断面図であり、この図に示すように、本発明に係る複合モジュールには、シリコンウェハをダイシングして形成した半導体基板1を有し、この半導体基板1の表面には、酸化膜などの絶縁層2が形成されている。
【0024】
そして、この半導体基板1の下面側には、異種材料薄膜を積層して形成した図示しない薄膜回路、及び配線3が配設され、また、この配線3を介して半導体基板1の下面側に、ICチップ4、薄膜回路で形成することが困難なコンデンサ、抵抗等の受動部品5、及びポスト電極6が配設されている。
【0025】
ここで、半導体基板1下面側の絶縁層2が除去され、p型、若しくはn型のシリコンが露出した接続部7には、ポスト電極6が配設され、半導体基板1をグランドとするグランド結線を構成している。
【0026】
そして、半導体基板1の下面側は、モールド樹脂8で樹脂封止され、モールド樹脂8から露出したポスト電極6の表面に、外部接続端子9が設けられている。
【0027】
このように、本発明に係る複合モジュールは、半導体基板の下側にICチップや受動部品を搭載すると共に、ポスト電極を設けることにより、半導体基板をエッチングすることなく、複合モジュールを実装する回路基板など、外部と接続する外部接続端子を設けることができる。
【0028】
また、半導体基板の絶縁層を除去し、p型、若しくはn型の導体層である半導体基板を露出させ、半導体基板をグランドとしてポスト電極とグランド結線を成しているため、金属シールドケースを用いることなく良好なシールド効果を得ることができる。
【0029】
次に、図2及び図3を用いて本実施の形態における複合モジュールの製造方法を説明する。
【0030】
まず、図2(a)に示すように、シリコンウェハ1の表面に、絶縁層2である酸化膜を形成する。
【0031】
続いて、絶縁層2の所定の位置にエッチングを施し、図2(b)に示すように、p型、若しくはn型のシリコンウェハ1表面が露出した接続部7を形成する。
【0032】
ここで、Al、Cu、Au、Ptなどの導電性金属を用いてスパッタリングを施し、図2(c)に示すように、配線3を形成すると共に、異種材料薄膜を積層して、図示しない薄膜回路を形成する。
【0033】
そして、図2(d)に示すように、配線3上の所定の位置に ICチップ4、及び受動部品5を実装し、また、配線3の所定の位置、及び接続部7にポスト電極6を形成する。なお、ポスト電極6の高さは、ICチップ4や受動部品5など、シリコンウェハ1上に実装された部品の中で最も高くなるように形成する。
【0034】
ここで、真空印刷法やトランスファーモールド等を用い、モールド樹脂8で樹脂封止を行う。この際、モールド樹脂8の厚さは、図3(a)に示すように、ポスト電極6を覆う厚さである。
【0035】
また、モールド樹脂8側から所定の厚みまで研磨を行い、図3(b)に示すように、少なくともポスト電極6をモールド樹脂8の表面から露出させる。
【0036】
そして、図3(c)に示すように、モールド樹脂8から露出したポスト電極6の露出面に接続端子9を印刷、めっき等の方法を用いて導電性金属で形成した後、シリコンウェハ1をダイシング分離して、複合モジュールを作成する。
【0037】
また、実装基板10に複合モジュールを実装する際には、図3(d)に示すように、接続端子9を下側(実装基板10側)に向けて実装する。
【0038】
ここで、図4を用いて、回路の所定の位置にポスト電極を形成するポスト電極の形成方法の一例を説明する。なお、接続部においても同様の工程を用いてポスト電極を形成することができる。
【0039】
まず、図4(a)に示すように、Au、又はCuからなるワイヤ11を有するボンディングツール12を用意する。
【0040】
ここで、図4(b)に示すように、熱、及び超音波等を併用したワイヤボンディング法を用いて、ワイヤ11の一端を配線3上の所定の位置に接続して、シリコンウェハ1に対して垂直方向にワイヤ柱14を形成する。
【0041】
そして、酸水素トーチ13や電気トーチ、レーザー等を用い、例えば、70〜500μm程度の長さにワイヤ11を切断し、図4(c)に示すように、ポスト電極6を形成する。
【0042】
なお、所定の高さまでめっきを積層し、ワイヤに代えてめっきを用いてポスト電極を形成することもできる。
【0043】
このように本実施の形態では、ICチップ等が搭載された面にポスト電極を設置し、モールド樹脂から露出したポスト電極に外部との接続端子を設けることにより、半導体基板に接続孔を設けることなく外部との接続端子を設けることができる。
【0044】
また、半導体基板をグランドとして半導体基板とグランド結線するポスト電極を設け、複合モジュールの半導体基板側を上とし、下側に形成された外部接続端子を介して実装基板に複合モジュールを実装する(図3(d)参照)ことにより、金属シールドケースを用いることなく、シールド効果を得ることができる。
【0045】
この際、シリコン基板とグランド結線する導電体からなる導電層でICチップや受動素子等の周囲を囲むことにより、シールド効果を向上させることが可能であり、例えば、図5に示すように、半導体基板1とグランド結線する複数のポスト電極6をICチップ4や受動部品5等の周囲に形成する構成や、図6に示すように、複合モジュールの周囲にめっき等を施し、半導体基板1とグランド結線する金属層11を設けるなどの方法を挙げることができる。
【0046】
本実施の形態では、シリコンウェハをダイシングして各複合モジュールに分離する領域にポスト電極等を設けていないが、図7(a)に示すように、導電性金属からなる金属柱12を設け、図7(b)に示すように、モールド樹脂を用いて樹脂封止を行った後、金属柱12の中間でダイシングを行い、図7(c)に示すように、金属柱12からなるポスト電極がダイシング面に形成された複合モジュールを形成することができる。
【0047】
この構成では、金属柱と半導体基板とをグランド結線させることにより、シールド効果を得ることができ、また、金属柱で複合モジュールを囲むことにより、図6に示すように、金属層11を複合モジュールの周囲に形成することができる。
【0048】
なお、シリコンウェハをダイシングする位置のみならず、他のポスト電極を金属柱を用いて形成することもできる。
【0049】
また、本実施の形態では、シリコンウェハを基板として用いているが、基板材料は、シリコンウェハに限られるものではなく、図8に示すように、ポリイミドなどの絶縁体材料からなる絶縁性基板15上に、導電性金属を用いてグランドとなる回路16を形成し、この回路上にパッシベーション膜17を設けた基板を半導体ウェハに代えて用いることもできる。
【0050】
このように、シリコンウェハに代えて絶縁性基板を用いた複合モジュールは、絶縁層に代えてパッシベーション膜を用い、また、p型、若しくはn型半導体基板に代えてグランドとなる回路を用いる点を除き、図2乃至4を用いて説明した複合モジュールの製造方法と同様の方法を用いて製造することができる。
【0051】
【発明の効果】
本発明では、半導体基板上にポスト電極を設け、モールド樹脂から露出したポスト電極に外部接続端子を形成することにより、半導体基板に接続孔を形成することなく、外部接続端子を設けることが可能となる。
【0052】
また、モールド樹脂から露出したポスト電極に外部接続端子を形成し、実装基板に実装することにより、金属シールドケースを用いることなく、シールド効果を得ることができる。
【図面の簡単な説明】
【図1】 本発明に係る複合モジュールの構成の一例を示す断面図
【図2】 本実施の形態における複合モジュールの製造方法を示す断面図
【図3】 本実施の形態における複合モジュールの製造方法を示す断面図
【図4】 本発明に係るポスト電極の形成方法の一例を示す断面図
【図5】 本発明に係る複合モジュールの他の構成の一例を示す断面図
【図6】 本発明に係る複合モジュールの他の構成の一例を示す断面図
【図7】 第2の実施の形態における複合モジュールの製造方法を示す断面図
【図8】 第3の実施の形態における複合モジュールを示す断面図
【図9】 従来技術における複合モジュールの製造方法を示す断面図
【図10】 従来技術における複合モジュールの構成を示す断面図
【符号の説明】
1…シリコンウェハ
2…絶縁層
3…配線
4…チップ
5…受動部品
6…ポスト電極
7…接続部
8…モールド樹脂
9…外部接続端子
10…実装基板
11…ワイヤ
12…金属柱
13…酸水素トーチ
14…ワイヤ柱
15…絶縁性基板
16…回路
17…パシ・ベーション膜
20…シリコンウェハ
21…酸化膜
22…配線
23…チップ
24…受動部品
25…モールド樹脂
26…接続孔
27…絶縁層
28…接続端子
29…複合モジュール
30…インターポーザ基板
31…金属シールドケース
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a composite module and a manufacturing method thereof, and more particularly to a composite module and a manufacturing method thereof.
[0002]
[Prior art]
A thin film circuit formed by laminating thin films of different materials, an integrated circuit such as an IC chip, a capacitor, a passive component such as a resistor that is difficult to form with a thin film circuit, is mounted on a semiconductor substrate such as a silicon wafer, and a mold resin is Composite modules that have been resin-sealed and used are widely used in various fields. Such composite modules have been formed using the following processes, for example, as shown in FIG.
[0003]
First, as shown in FIG. 9A, an oxide film 21 which is an insulating layer is formed on the surface of the silicon wafer 20, and a thin film of a different material is laminated on the oxide film 21 by sputtering or the like, and a thin film (not shown). In addition to forming a circuit, a wiring 22 made of a conductive metal such as Al, Cu, Au, or Pt is formed.
[0004]
Next, as shown in FIG. 9B, an IC chip 23 and a passive component 24 such as a capacitor and a resistor are mounted at predetermined positions on the wiring 22, and resin sealing is performed using a mold resin 25 such as polyimide. I do.
[0005]
Here, as shown in FIG. 9C, etching is performed at a predetermined position from the lower surface side opposite to the surface of the silicon wafer 20 on which the IC chip 23 and the passive component 24 are mounted, and the wiring 22 is exposed. Hole 26 is formed.
[0006]
9D, after forming an insulating layer 27 such as an oxide film on the inner wall of the connection hole 26, filling the conductive metal to form the connection terminal 28, the silicon wafer 20 is diced. Separated and created a composite module.
[0007]
The composite module 29 formed in this way is mounted on an interposer substrate 30 on which an external lead terminal (not shown) is formed, as shown in FIG. 10, and a metal shield case 31 is placed over the interposer so as to cover the composite module 29. By providing on the board | substrate 30, the shielding effect was acquired.
[0008]
[Problems to be solved by the invention]
However, in such a composite module, since a connection terminal with the outside is provided, it is necessary to perform connection to form a connection hole, which hinders a manufacturing process and cost reduction.
[0009]
In addition, since silicon, which is a p-type or n-type conductor layer, is exposed on the inner wall of the connection hole formed by etching the silicon wafer, it is necessary to provide an insulating layer such as an oxide film.
[0010]
Since the composite module is mounted on the interposer board and the composite module is covered with a metal shield case, when mounting the composite module on the circuit board, at least a mounting area capable of mounting the interposer board is required. It was difficult to reduce the mounting area of the composite module.
[0011]
In addition, since the composite module is covered with a metal shield case, it is necessary to secure a certain distance between the IC chip of the composite module, passive components, etc. and the metal shield case in the height direction. This has prevented the thickness from being reduced.
[0012]
Although there is a method of directly mounting the composite module on the circuit board on which the composite module is mounted without using an interposer board, the area for providing the metal shield case is secured on the circuit board and the composite board is combined with the metal shield case. It was necessary to secure a certain distance from the module.
[0013]
Therefore, in the present invention, in the composite module and the manufacturing method thereof, the composite module capable of obtaining good shielding characteristics without providing a connection hole penetrating the silicon wafer and without using a metal shield case, and the manufacturing method thereof The purpose is to provide.
[0014]
The composite module according to the present invention is a composite module in which an integrated circuit and a passive component are mounted on a wiring formed on a semiconductor substrate and connected to the outside via an external connection terminal. The integrated circuit and the passive component a post electrode formed on the mounting surface of the semiconductor substrate mounted with a connection hole formed in the insulating layer of the mounting surface, is formed around the integrated circuit and the passive components, the said semiconductor substrate A conductive layer made of a conductor connected through a connection hole and having a ground connection with the semiconductor substrate as a ground, a mold resin applied to the mounting surface and sealed with resin, and the mold resin And an external connection terminal connected to the outside via the post electrode exposed from the surface.
[0015]
Then, the semiconductor substrate, p-type or n-type silicon wafer der Rukoto the desirable.
[0016]
Further, the composite module according to the present invention is the composite module in which the integrated circuit and the passive component are mounted on the wiring formed on the substrate made of the insulating material and connected to the outside through the external connection terminal. A circuit, a post electrode formed on the mounting surface of the substrate on which the passive component is mounted, a circuit that becomes a ground formed using a conductive material on the mounting surface of the substrate, and a ground connection with the circuit. And a conductive layer made of a conductor formed around the integrated circuit and the passive component, a mold resin applied to the mounting surface and encapsulating the resin, and the mold resin exposed from the mold resin An external connection terminal connected to the outside through a post electrode is provided .
[0017]
Here, it is preferable that the conductor and the post electrode constituting the conductive layer are made of wires.
[0018]
Next, a method for manufacturing a composite module according to the present invention is a method for manufacturing a composite module in which an integrated circuit and a passive component are mounted on a wiring formed on a semiconductor substrate and connected to the outside via an external connection terminal. Forming a connection hole through which the semiconductor substrate is exposed in an insulating layer formed on a mounting surface of the semiconductor substrate on which the integrated circuit and the passive component are mounted; and the integrated circuit and the mounting surface of the semiconductor substrate. A step of mounting a passive component; a step of forming a post electrode on a mounting surface of the semiconductor substrate; the integrated circuit mounted on the semiconductor substrate; and the periphery of the passive component via the connection hole. forming a conductive layer made of a conductor forming a ground connection for the semiconductor substrate and the ground, the post electrodes, and the mounting surface wherein the conductive layer with a thickness of buried in the mold resin Sealing the resin, grinding the mold resin to form at least the post electrode and a flat ground surface where the conductive layer is exposed, and the post electrode or the conductive layer from the ground surface side. Forming an external connection terminal to be connected to the outside through the above.
[0019]
Then, the semiconductor substrate is a silicon wafer, wherein the connection hole, p-type, or to expose the n-type the silicon wafer is desired.
[0020]
In addition, the method for manufacturing a composite module according to the present invention includes a composite module in which an integrated circuit and passive components are mounted on a wiring formed on a substrate made of an insulating material and connected to the outside via an external connection terminal. In the manufacturing method, the step of forming a circuit to be a ground using a conductive material on the mounting surface of the substrate on which the integrated circuit and the passive component are mounted, and the passivation film formed on the circuit, Mounting the integrated circuit and passive components on the mounting surface of the substrate, forming a connection hole exposing the circuit on the mounting surface of the substrate, and forming a post electrode on the mounting surface of the substrate; Forming a conductive layer made of a conductor that forms a ground connection with the circuit through the connection hole, around the integrated circuit mounted on the substrate and the passive component; and A step of resin-sealing from the mounting surface side with a thickness in which the strike electrode and the conductive layer are buried in the mold resin, and a flat ground surface on which at least the post electrode and the conductive layer are exposed by grinding the mold resin And a step of forming an external connection terminal connected to the outside through the post electrode or the conductive layer from the ground surface side .
[0021]
Here, it is preferable that the conductor and the post electrode constituting the conductive layer are formed using a wire.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of a composite module and a manufacturing method thereof according to the present invention will be described below in detail with reference to the accompanying drawings.
[0023]
FIG. 1 is a cross-sectional view showing an example of the configuration of a composite module according to the present invention. As shown in FIG. 1, the composite module according to the present invention has a semiconductor substrate 1 formed by dicing a silicon wafer. An insulating layer 2 such as an oxide film is formed on the surface of the semiconductor substrate 1.
[0024]
A thin film circuit (not shown) formed by laminating thin films of different materials and a wiring 3 are disposed on the lower surface side of the semiconductor substrate 1, and the lower surface side of the semiconductor substrate 1 is disposed via the wiring 3. An IC chip 4, a capacitor difficult to form with a thin film circuit, a passive component 5 such as a resistor, and a post electrode 6 are disposed.
[0025]
Here, the insulating layer 2 on the lower surface side of the semiconductor substrate 1 is removed, and a post electrode 6 is disposed on the connection portion 7 where the p-type or n-type silicon is exposed, and the semiconductor substrate 1 is grounded. Is configured.
[0026]
Then, the lower surface side of the semiconductor substrate 1 is resin-sealed with a mold resin 8, and external connection terminals 9 are provided on the surface of the post electrode 6 exposed from the mold resin 8.
[0027]
As described above, the composite module according to the present invention is a circuit board on which an IC chip and a passive component are mounted on the lower side of the semiconductor substrate, and the post module is provided to mount the composite module without etching the semiconductor substrate. For example, an external connection terminal connected to the outside can be provided.
[0028]
Further, the insulating layer of the semiconductor substrate is removed, the semiconductor substrate which is a p-type or n-type conductor layer is exposed, and the semiconductor substrate is used as a ground to form a ground connection with the post electrode, so a metal shield case is used. A good shielding effect can be obtained without any problems.
[0029]
Next, the manufacturing method of the composite module in this Embodiment is demonstrated using FIG.2 and FIG.3.
[0030]
First, as shown in FIG. 2A, an oxide film that is an insulating layer 2 is formed on the surface of the silicon wafer 1.
[0031]
Subsequently, etching is performed on a predetermined position of the insulating layer 2 to form a connection portion 7 where the surface of the p-type or n-type silicon wafer 1 is exposed as shown in FIG.
[0032]
Here, sputtering is performed using a conductive metal such as Al, Cu, Au, Pt, etc., and as shown in FIG. 2C, a wiring 3 is formed and thin films of different materials are laminated to form a thin film (not shown). Form a circuit.
[0033]
Then, as shown in FIG. 2D, the IC chip 4 and the passive component 5 are mounted at predetermined positions on the wiring 3, and the post electrode 6 is mounted at the predetermined position of the wiring 3 and the connection portion 7. Form. The post electrode 6 is formed to have the highest height among the components mounted on the silicon wafer 1 such as the IC chip 4 and the passive component 5.
[0034]
Here, resin sealing is performed with the mold resin 8 using a vacuum printing method, a transfer mold, or the like. At this time, the thickness of the mold resin 8 is a thickness that covers the post electrode 6 as shown in FIG.
[0035]
Further, polishing is performed from the mold resin 8 side to a predetermined thickness, and at least the post electrode 6 is exposed from the surface of the mold resin 8 as shown in FIG.
[0036]
Then, as shown in FIG. 3C, after the connection terminals 9 are formed of a conductive metal on the exposed surface of the post electrode 6 exposed from the mold resin 8 using a method such as printing or plating, the silicon wafer 1 is formed. Separate the dicing to create a composite module.
[0037]
Further, when the composite module is mounted on the mounting substrate 10, as shown in FIG. 3D, the connection terminals 9 are mounted facing downward (the mounting substrate 10 side).
[0038]
Here, an example of a post electrode forming method for forming a post electrode at a predetermined position of a circuit will be described with reference to FIG. Note that a post electrode can be formed in the connection portion by using the same process.
[0039]
First, as shown in FIG. 4A, a bonding tool 12 having a wire 11 made of Au or Cu is prepared.
[0040]
Here, as shown in FIG. 4B, one end of the wire 11 is connected to a predetermined position on the wiring 3 by using a wire bonding method using both heat and ultrasonic waves. On the other hand, the wire pillar 14 is formed in the vertical direction.
[0041]
Then, using an oxyhydrogen torch 13, an electric torch, a laser, or the like, the wire 11 is cut to a length of about 70 to 500 μm, for example, and the post electrode 6 is formed as shown in FIG.
[0042]
In addition, plating can be laminated | stacked to predetermined height, and it can replace with a wire and can form a post electrode using plating.
[0043]
As described above, in this embodiment, the post electrode is provided on the surface on which the IC chip or the like is mounted, and the connection electrode for the outside is provided on the post electrode exposed from the mold resin, thereby providing the connection hole in the semiconductor substrate. It is possible to provide an external connection terminal.
[0044]
In addition, a post electrode for grounding the semiconductor substrate is provided using the semiconductor substrate as a ground, and the composite module is mounted on the mounting substrate via the external connection terminals formed on the lower side with the semiconductor substrate side of the composite module as the upper side (see FIG. 3 (d)), a shielding effect can be obtained without using a metal shield case.
[0045]
At this time, it is possible to improve the shielding effect by surrounding the periphery of the IC chip or the passive element with a conductive layer made of a conductor that is connected to the silicon substrate and the ground. For example, as shown in FIG. A structure in which a plurality of post electrodes 6 to be grounded to the substrate 1 are formed around the IC chip 4 and the passive component 5 or the like, as shown in FIG. Examples thereof include a method of providing a metal layer 11 to be connected.
[0046]
In the present embodiment, no post electrode or the like is provided in a region where the silicon wafer is diced and separated into each composite module, but as shown in FIG. 7A, a metal column 12 made of a conductive metal is provided, As shown in FIG. 7 (b), after sealing with a mold resin, dicing is performed in the middle of the metal column 12, and as shown in FIG. Thus, a composite module having a dicing surface can be formed.
[0047]
In this configuration, a shield effect can be obtained by grounding the metal pillar and the semiconductor substrate, and by surrounding the composite module with the metal pillar, as shown in FIG. Can be formed around.
[0048]
In addition to the position where the silicon wafer is diced, other post electrodes can be formed using metal pillars.
[0049]
In this embodiment, a silicon wafer is used as the substrate. However, the substrate material is not limited to the silicon wafer, and as shown in FIG. 8, an insulating substrate 15 made of an insulating material such as polyimide is used. above, using a conductive metal to form a circuit 16 comprising a ground, it can be used instead of the substrate provided with path Sshibe Shon film 17 on the circuit in the semiconductor wafer.
[0050]
As described above, the composite module using the insulating substrate instead of the silicon wafer uses a passivation film instead of the insulating layer, and uses a circuit serving as a ground instead of the p-type or n-type semiconductor substrate. Except for this, it can be manufactured using a method similar to the method of manufacturing the composite module described with reference to FIGS.
[0051]
【The invention's effect】
In the present invention, it is possible to provide the external connection terminal without forming the connection hole in the semiconductor substrate by providing the post electrode on the semiconductor substrate and forming the external connection terminal on the post electrode exposed from the mold resin. Become.
[0052]
Further, by forming external connection terminals on the post electrodes exposed from the mold resin and mounting them on the mounting substrate, a shielding effect can be obtained without using a metal shield case.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of the configuration of a composite module according to the present invention. FIG. 2 is a cross-sectional view showing a method for manufacturing a composite module in the present embodiment. FIG. 4 is a cross-sectional view showing an example of a method of forming a post electrode according to the present invention. FIG. 5 is a cross-sectional view showing an example of another configuration of the composite module according to the present invention. FIG. 7 is a cross-sectional view showing an example of another configuration of the composite module. FIG. 7 is a cross-sectional view showing a method for manufacturing the composite module in the second embodiment. FIG. 8 is a cross-sectional view showing the composite module in the third embodiment. FIG. 9 is a cross-sectional view showing a method of manufacturing a composite module in the prior art.
DESCRIPTION OF SYMBOLS 1 ... Silicon wafer 2 ... Insulating layer 3 ... Wiring 4 ... Chip 5 ... Passive component 6 ... Post electrode 7 ... Connection part 8 ... Mold resin 9 ... External connection terminal 10 ... Mounting substrate 11 ... Wire 12 ... Metal pillar 13 ... Oxyhydrogen Torch 14 ... Wire pillar 15 ... Insulating substrate 16 ... Circuit 17 ... Passivation film 20 ... Silicon wafer 21 ... Oxide film 22 ... Wiring 23 ... Chip 24 ... Passive component 25 ... Mold resin 26 ... Connection hole 27 ... Insulating layer 28 ... Connection terminal 29 ... Composite module 30 ... Interposer substrate 31 ... Metal shield case

Claims (8)

半導体基板上に絶縁層を介して形成された配線上に集積回路、及び受動部品を実装し、外部接続端子を介して外部と接続する複合モジュールにおいて、
前記集積回路、及び前記受動部品を実装した前記半導体基板の実装面に形成されたポスト電極と、
前記実装面の前記絶縁層に形成された接続孔と、
前記集積回路及び前記受動部品の周囲に形成され、前記半導体基板と前記接続孔を介して接続し、該半導体基板をグランドとするグランド結線を成した導電体からなる導電層と、
前記実装面に塗付されて樹脂封止を施しているモールド樹脂と、
前記モールド樹脂から露出した前記ポスト電極を介して外部と接続する外部接続端子と
を具備することを特徴とする複合モジュール。
In a composite module in which an integrated circuit and passive components are mounted on a wiring formed through an insulating layer on a semiconductor substrate and connected to the outside through an external connection terminal.
A post electrode formed on a mounting surface of the semiconductor substrate on which the integrated circuit and the passive component are mounted;
A connection hole formed in the insulating layer of the mounting surface;
A conductive layer made of a conductor formed around the integrated circuit and the passive component, connected to the semiconductor substrate via the connection hole, and having a ground connection with the semiconductor substrate as a ground;
Mold resin that is applied to the mounting surface and is sealed with resin,
A composite module comprising an external connection terminal connected to the outside through the post electrode exposed from the mold resin.
前記半導体基板は、p型、若しくはn型のシリコンウェハであることを特徴とする請求項1記載の複合モジュール。  The composite module according to claim 1, wherein the semiconductor substrate is a p-type or n-type silicon wafer. 絶縁性材料からなる基板上に形成された配線上に集積回路、及び受動部品を実装し、外部接続端子を介して外部と接続する複合モジュールにおいて、
前記集積回路、及び前記受動部品を実装した前記基板の実装面に形成されたポスト電極と、
前記基板の実装面に導電性材料を用いて形成されたグランドとなる回路と、
前記回路とグランド結線を成し、前記集積回路、及び前記受動部品の周囲に形成された導電体からなる導電層と、
前記実装面に塗付されて樹脂封止を施しているモールド樹脂と、
前記モールド樹脂から露出した前記ポスト電極を介して外部と接続する外部接続端子と
を具備することを特徴とする複合モジュール。
In a composite module in which an integrated circuit and passive components are mounted on a wiring formed on a substrate made of an insulating material and connected to the outside via an external connection terminal.
A post electrode formed on a mounting surface of the substrate on which the integrated circuit and the passive component are mounted;
A circuit to be a ground formed using a conductive material on the mounting surface of the substrate;
A conductive layer that forms a ground connection with the circuit, and is formed of a conductor formed around the integrated circuit and the passive component;
Mold resin that is applied to the mounting surface and is sealed with resin,
A composite module comprising an external connection terminal connected to the outside through the post electrode exposed from the mold resin.
前記導電層を構成する前記導電体及び前記ポスト電極は、ワイヤからなることを特徴とする請求項1乃至3のいずれか1項記載の複合モジュール。The composite module according to any one of claims 1 to 3 , wherein the conductor and the post electrode constituting the conductive layer are made of a wire. 半導体基板上に形成された配線上に集積回路、及び受動部品を実装し、外部接続端子を介して外部と接続する複合モジュールの製造方法において、
前記半導体基板の、前記集積回路及び受動部品を実装する実装面に形成されている絶縁層に該半導体基板が露出する接続孔を形成する工程と、
前記半導体基板の実装面に前記集積回路及び受動部品を実装する工程と、
前記半導体基板の実装面にポスト電極を形成する工程と、
前記半導体基板上に実装された前記集積回路、及び前記受動部品の周囲に、前記接続孔を介して前記半導体基板をグランドとするグランド結線を成す導電体からなる導電層を形成する工程と、
前記ポスト電極、及び前記導電層がモールド樹脂に埋まる厚さで前記実装面側から樹脂封止する工程と、
前記モールド樹脂を研削して少なくとも前記ポスト電極、及び前記導電層が露出する平坦な研削面を形成する工程と、
前記研削面側から前記ポスト電極、又は前記導電層を介して外部と接続する外部接続端子を形成する工程と
を備えることを特徴とする複合モジュールの製造方法。
In a method for manufacturing a composite module in which an integrated circuit and passive components are mounted on wiring formed on a semiconductor substrate and connected to the outside via an external connection terminal.
Forming a connection hole in which the semiconductor substrate is exposed in an insulating layer formed on a mounting surface of the semiconductor substrate on which the integrated circuit and the passive component are mounted;
Mounting the integrated circuit and passive components on the mounting surface of the semiconductor substrate;
Forming a post electrode on the mounting surface of the semiconductor substrate;
Forming a conductive layer made of a conductor that forms a ground connection with the semiconductor substrate as a ground via the connection hole, around the integrated circuit mounted on the semiconductor substrate and the passive component;
A step of resin-sealing from the mounting surface side with a thickness in which the post electrode and the conductive layer are embedded in a mold resin;
Grinding the mold resin to form at least the post electrode and a flat ground surface from which the conductive layer is exposed;
And a step of forming an external connection terminal connected to the outside through the post electrode or the conductive layer from the ground surface side.
前記半導体基板は、シリコンウェハであり、
前記接続孔は、p型、若しくはn型の前記シリコンウェハを露出させる
ことを特徴とする請求項5記載の複合モジュールの製造方法。
The semiconductor substrate is a silicon wafer;
6. The method of manufacturing a composite module according to claim 5, wherein the connection hole exposes the p-type or n-type silicon wafer.
絶縁性材料からなる基板上に形成された配線上に集積回路、及び受動部品を実装し、外部接続端子を介して外部と接続する複合モジュールの製造方法において、
前記集積回路、及び受動部品を実装する前記基板の実装面に導電性材料を用いてグランドとなる回路を形成する工程と、
前記回路上に形成されたパッシベーション膜を介して、前記基板の実装面に前記集積回路、及び受動部品を実装する工程と、
前記基板の実装面に前記回路が露出する接続孔を形成する工程と、
前記基板の実装面にポスト電極を形成する工程と、
前記基板上に実装された前記集積回路、及び前記受動部品の周囲に、前記接続孔を介して前記回路とグランド結線を成す導電体からなる導電層を形成する工程と、
前記ポスト電極、及び前記導電層がモールド樹脂に埋まる厚さで前記実装面側から樹脂封止する工程と、
前記モールド樹脂を研削して少なくとも前記ポスト電極、及び前記導電層が露出する平坦な研削面を形成する工程と、
前記研削面側から前記ポスト電極、又は前記導電層を介して外部と接続する外部接続端子を形成する工程と
を備えることを特徴とする複合モジュールの製造方法。
In a method of manufacturing a composite module in which an integrated circuit and passive components are mounted on a wiring formed on a substrate made of an insulating material and connected to the outside via an external connection terminal.
Forming a circuit serving as a ground using a conductive material on a mounting surface of the substrate on which the integrated circuit and the passive component are mounted;
Mounting the integrated circuit and passive components on the mounting surface of the substrate through a passivation film formed on the circuit;
Forming a connection hole through which the circuit is exposed on the mounting surface of the substrate;
Forming a post electrode on the mounting surface of the substrate;
Forming a conductive layer made of a conductor that forms a ground connection with the circuit through the connection hole, around the integrated circuit mounted on the substrate and the passive component;
A step of resin-sealing from the mounting surface side with a thickness in which the post electrode and the conductive layer are embedded in a mold resin;
Grinding the mold resin to form at least the post electrode and a flat ground surface from which the conductive layer is exposed;
And a step of forming an external connection terminal connected to the outside through the post electrode or the conductive layer from the ground surface side.
前記導電層を構成する前記導電体及び前記ポスト電極は、ワイヤを用いて形成することを特徴とする請求項5乃至7のいずれか1項記載の複合モジュールの製造方法。The conductor and the post electrodes are method of producing a composite module according to any one of claims 5 to 7, characterized in that formed using the wire constituting the conductive layer.
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