JP4069963B2 - Ｍｏｓトランジスタ敷居値補償回路及びこれを備えたフリップフロップ型センスアンプ - Google Patents

Ｍｏｓトランジスタ敷居値補償回路及びこれを備えたフリップフロップ型センスアンプ Download PDF

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Publication number
JP4069963B2
JP4069963B2 JP30325396A JP30325396A JP4069963B2 JP 4069963 B2 JP4069963 B2 JP 4069963B2 JP 30325396 A JP30325396 A JP 30325396A JP 30325396 A JP30325396 A JP 30325396A JP 4069963 B2 JP4069963 B2 JP 4069963B2
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threshold value
switch element
capacitor
mos transistor
circuit
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JP30325396A
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JPH10149678A5 (enExample
JPH10149678A (ja
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美寿 齋藤
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Fujitsu Ltd
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Fujitsu Ltd
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Publication of JPH10149678A5 publication Critical patent/JPH10149678A5/ja
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JP30325396A 1996-11-14 1996-11-14 Ｍｏｓトランジスタ敷居値補償回路及びこれを備えたフリップフロップ型センスアンプ Expired - Fee Related JP4069963B2 (ja)

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Application Number Priority Date Filing Date Title
JP30325396A JP4069963B2 (ja) 1996-11-14 1996-11-14 Ｍｏｓトランジスタ敷居値補償回路及びこれを備えたフリップフロップ型センスアンプ

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Application Number Priority Date Filing Date Title
JP30325396A JP4069963B2 (ja) 1996-11-14 1996-11-14 Ｍｏｓトランジスタ敷居値補償回路及びこれを備えたフリップフロップ型センスアンプ

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JPH10149678A JPH10149678A (ja) 1998-06-02
JPH10149678A5 JPH10149678A5 (enExample) 2004-08-26
JP4069963B2 true JP4069963B2 (ja) 2008-04-02

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JP30325396A Expired - Fee Related JP4069963B2 (ja) 1996-11-14 1996-11-14 Ｍｏｓトランジスタ敷居値補償回路及びこれを備えたフリップフロップ型センスアンプ

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8205766B2 (en) 2009-05-20 2012-06-26 The Bergquist Company Method for packaging thermal interface materials
US8430264B2 (en) 2009-05-20 2013-04-30 The Bergquist Company Method for packaging thermal interface materials

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768348B2 (en) 2001-11-30 2004-07-27 Semiconductor Energy Laboratory Co., Ltd. Sense amplifier and electronic apparatus using the same
JP4624340B2 (ja) * 2002-11-20 2011-02-02 株式会社半導体エネルギー研究所 半導体表示装置
US7327168B2 (en) * 2002-11-20 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7528643B2 (en) * 2003-02-12 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device having the same, and driving method of the same
JP5284415B2 (ja) * 2011-06-03 2013-09-11 株式会社半導体理工学研究センター フリップフロップ回路装置及びそれを用いたプロセッサ装置
CN108155901B (zh) * 2016-12-05 2023-11-24 中国工程物理研究院电子工程研究所 一种抗参数漂移反相器
US10163481B1 (en) 2017-07-20 2018-12-25 Micron Technology, Inc. Offset cancellation for latching in a memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8205766B2 (en) 2009-05-20 2012-06-26 The Bergquist Company Method for packaging thermal interface materials
US8430264B2 (en) 2009-05-20 2013-04-30 The Bergquist Company Method for packaging thermal interface materials

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JPH10149678A (ja) 1998-06-02

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