JP4065428B2 - ルテニウム及びオスミウム化合物の合成方法 - Google Patents
ルテニウム及びオスミウム化合物の合成方法 Download PDFInfo
- Publication number
- JP4065428B2 JP4065428B2 JP2003530714A JP2003530714A JP4065428B2 JP 4065428 B2 JP4065428 B2 JP 4065428B2 JP 2003530714 A JP2003530714 A JP 2003530714A JP 2003530714 A JP2003530714 A JP 2003530714A JP 4065428 B2 JP4065428 B2 JP 4065428B2
- Authority
- JP
- Japan
- Prior art keywords
- mixture
- ligand
- excess
- solvent
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
- C07F15/0046—Ruthenium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
- C07F15/002—Osmium compounds
Description
Claims (8)
- 配位子以外の溶媒を添加しない条件下での式LxM(CO)y(式中、L=溶媒としても働く配位子、x=1〜4、M=Ru又はOs及びy=1〜5)を有するカルボニル系化合物の合成方法であって、
a.式Ma(CO)b(式中、M=Ru又はOs、a=1〜3、b=5〜12)の金属カルボニル化合物を過剰の前記配位子と反応させて第1の混合物を生成すること、
b.任意の過剰な前記配位子を前記第1の混合物から除去して第2の混合物を生成すること、
c.前記第2の混合物を蒸留して前記カルボニル系化合物を生成すること
を含む方法。 - 前記カルボニル系化合物が、式LxM(CO)y(式中、L=C6H8、x=1、M=Ru及びy=3)を含む、請求項1に記載の方法。
- 前記カルボニル系化合物が、式LxM(CO)y(式中、L=C6H8、x=1、M=Os及びy=3)を含む、請求項1に記載の方法。
- 前記配位子が、ホスフィン、ホスファイト、アミン、アルシン、スチベン、エーテル、スルフィド、アルキリデン、ナイトライト、イソニトリル、チオカルボニル、直鎖状、分枝状又は環状モノアルケン、直鎖状、分枝状又は環状ジエン、直鎖状、分枝状又は環状トリエン、二環式アルケン、二環式ジエン、二環式トリエン、三環式アルケン、三環式ジエン、三環式トリエン、及びアルキンからなる群から選択される配位子である、請求項1に記載の方法。
- 配位子以外の溶媒を添加しない条件下でのルテニウム錯体の合成方法であって、
a.式Mn(CO)z(式中、M=Ru、n=3、z=12)の金属カルボニル化合物を過剰の、溶媒としても働く配位子と反応させて第1の混合物を生成し、
b.任意の過剰な前記配位子を前記第1の混合物から除去して第2の混合物を生成し、
c.前記第2の混合物を蒸留して前記カルボニル系化合物を生成する
方法。 - 前記ルテニウム系化合物が、式LxM(CO)y(式中、L=C6H8、x=1、M=Ru及びy=3)を含む、請求項5に記載の方法。
- 配位子以外の溶媒を添加しない条件下でのオスミウム錯体の合成方法であって、
a.式Mn(CO)z(式中、M=Os、n=3、z=12)の金属カルボニル化合物を過剰の、溶媒としても働く配位子と反応させて第1の混合物を生成し、
b.任意の過剰な前記配位子を前記第1の混合物から除去して第2の混合物を生成し、
c.前記第2の混合物を蒸留して前記カルボニル系化合物を生成する
方法。 - 前記オスミウム系化合物が、式LxM(CO)y(式中、L=C6H8、x=1、M=Os及びy=3)を含む、請求項7に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/963,452 US6420583B1 (en) | 2001-09-27 | 2001-09-27 | Methods of synthesizing ruthenium and osmium compounds |
PCT/US2002/014301 WO2003027127A1 (en) | 2001-09-27 | 2002-05-08 | Methods of synthesizing ruthenium and osmium compounds |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005503441A JP2005503441A (ja) | 2005-02-03 |
JP4065428B2 true JP4065428B2 (ja) | 2008-03-26 |
Family
ID=25507267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003530714A Expired - Fee Related JP4065428B2 (ja) | 2001-09-27 | 2002-05-08 | ルテニウム及びオスミウム化合物の合成方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6420583B1 (ja) |
EP (1) | EP1430064A4 (ja) |
JP (1) | JP4065428B2 (ja) |
KR (1) | KR100885095B1 (ja) |
CN (1) | CN1294138C (ja) |
CA (1) | CA2461815A1 (ja) |
TW (1) | TWI311560B (ja) |
WO (1) | WO2003027127A1 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6884901B2 (en) | 2002-10-31 | 2005-04-26 | Praxair Technology, Inc. | Methods for making metallocene compounds |
AU2003280684B2 (en) * | 2002-10-31 | 2009-06-25 | Nippon Zoki Pharmaceutical Co., Ltd. | Remedy for fibromyalgia |
US7238821B2 (en) * | 2003-10-06 | 2007-07-03 | Praxair Technology, Inc. | Method for large scale production of organometallic compounds |
US7244858B2 (en) | 2004-03-25 | 2007-07-17 | Praxair Technology, Inc. | Organometallic precursor compounds |
US7270848B2 (en) * | 2004-11-23 | 2007-09-18 | Tokyo Electron Limited | Method for increasing deposition rates of metal layers from metal-carbonyl precursors |
US7279421B2 (en) * | 2004-11-23 | 2007-10-09 | Tokyo Electron Limited | Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors |
US7547464B2 (en) * | 2005-01-19 | 2009-06-16 | Praxair Technology, Inc. | Organometallic precursor compounds |
US7351285B2 (en) * | 2005-03-29 | 2008-04-01 | Tokyo Electron Limited | Method and system for forming a variable thickness seed layer |
US20070231489A1 (en) * | 2006-03-29 | 2007-10-04 | Tokyo Electron Limited | Method for introducing a precursor gas to a vapor deposition system |
US7892358B2 (en) * | 2006-03-29 | 2011-02-22 | Tokyo Electron Limited | System for introducing a precursor gas to a vapor deposition system |
US7956168B2 (en) * | 2006-07-06 | 2011-06-07 | Praxair Technology, Inc. | Organometallic compounds having sterically hindered amides |
CN101223298B (zh) * | 2006-09-22 | 2011-09-07 | 乔治洛德方法研究和开发液化空气有限公司 | 含钌膜的沉积方法 |
US20080237860A1 (en) * | 2007-03-27 | 2008-10-02 | Tokyo Electron Limited | Interconnect structures containing a ruthenium barrier film and method of forming |
US20080242088A1 (en) * | 2007-03-29 | 2008-10-02 | Tokyo Electron Limited | Method of forming low resistivity copper film structures |
TWI425110B (zh) * | 2007-07-24 | 2014-02-01 | Sigma Aldrich Co | 以化學相沉積法製造含金屬薄膜之方法 |
TWI382987B (zh) * | 2007-07-24 | 2013-01-21 | Sigma Aldrich Co | 應用於化學相沉積製程的有機金屬前驅物 |
US7829454B2 (en) * | 2007-09-11 | 2010-11-09 | Tokyo Electron Limited | Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device |
US7704879B2 (en) * | 2007-09-27 | 2010-04-27 | Tokyo Electron Limited | Method of forming low-resistivity recessed features in copper metallization |
US7884012B2 (en) * | 2007-09-28 | 2011-02-08 | Tokyo Electron Limited | Void-free copper filling of recessed features for semiconductor devices |
US7776740B2 (en) * | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
US8247030B2 (en) * | 2008-03-07 | 2012-08-21 | Tokyo Electron Limited | Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer |
US7799681B2 (en) * | 2008-07-15 | 2010-09-21 | Tokyo Electron Limited | Method for forming a ruthenium metal cap layer |
US7871929B2 (en) * | 2008-07-30 | 2011-01-18 | Tel Epion Inc. | Method of forming semiconductor devices containing metal cap layers |
US7776743B2 (en) * | 2008-07-30 | 2010-08-17 | Tel Epion Inc. | Method of forming semiconductor devices containing metal cap layers |
US20100081274A1 (en) * | 2008-09-29 | 2010-04-01 | Tokyo Electron Limited | Method for forming ruthenium metal cap layers |
US7977235B2 (en) * | 2009-02-02 | 2011-07-12 | Tokyo Electron Limited | Method for manufacturing a semiconductor device with metal-containing cap layers |
US8716132B2 (en) * | 2009-02-13 | 2014-05-06 | Tokyo Electron Limited | Radiation-assisted selective deposition of metal-containing cap layers |
JP2013530304A (ja) * | 2010-04-19 | 2013-07-25 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Cvd及びald用のルテニウム含有前駆体 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962716A (en) * | 1998-08-27 | 1999-10-05 | Micron Technology, Inc. | Methods for preparing ruthenium and osmium compounds |
AUPP554098A0 (en) * | 1998-08-28 | 1998-09-17 | Technological Resources Pty Limited | A process and an apparatus for producing metals and metal alloys |
US6303809B1 (en) * | 1999-12-10 | 2001-10-16 | Yun Chi | Organometallic ruthenium and osmium source reagents for chemical vapor deposition |
-
2001
- 2001-09-27 US US09/963,452 patent/US6420583B1/en not_active Expired - Fee Related
-
2002
- 2002-05-08 EP EP02799545A patent/EP1430064A4/en not_active Withdrawn
- 2002-05-08 JP JP2003530714A patent/JP4065428B2/ja not_active Expired - Fee Related
- 2002-05-08 WO PCT/US2002/014301 patent/WO2003027127A1/en active Application Filing
- 2002-05-08 CN CNB02822888XA patent/CN1294138C/zh not_active Expired - Fee Related
- 2002-05-08 CA CA002461815A patent/CA2461815A1/en not_active Abandoned
- 2002-05-08 KR KR1020047004455A patent/KR100885095B1/ko not_active IP Right Cessation
- 2002-06-03 TW TW091111888A patent/TWI311560B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2461815A1 (en) | 2003-04-03 |
EP1430064A1 (en) | 2004-06-23 |
WO2003027127A1 (en) | 2003-04-03 |
CN1589275A (zh) | 2005-03-02 |
KR100885095B1 (ko) | 2009-02-20 |
KR20040037151A (ko) | 2004-05-04 |
JP2005503441A (ja) | 2005-02-03 |
US6420583B1 (en) | 2002-07-16 |
EP1430064A4 (en) | 2009-09-30 |
TWI311560B (en) | 2009-07-01 |
WO2003027127A8 (en) | 2004-09-16 |
CN1294138C (zh) | 2007-01-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4065428B2 (ja) | ルテニウム及びオスミウム化合物の合成方法 | |
JP5857970B2 (ja) | (アミドアミノアルカン)金属化合物、及び当該金属化合物を用いた金属含有薄膜の製造方法 | |
Weiss et al. | Studies of 2-(. eta. 5-C5H5) CoB4H8, a cobaltaborane analog of pentaborane (9) | |
WO2020116364A1 (ja) | ルテニウム錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
US20180286529A1 (en) | Liquid precursor compositions, preparation methods thereof, and methods for forming layer using the composition | |
WO2015110492A1 (en) | Process for the generation of thin inorganic films | |
WO2021153640A1 (ja) | 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
Teichgräber et al. | Dicopper (I) oxalate complexes as molecular precursors for the deposition of copper compounds | |
TWI532869B (zh) | 由釕錯合物所構成的化學蒸鍍原料及其製造方法和化學蒸鍍法 | |
Rahbarnoohi et al. | Synthesis and Molecular Structures of the First Example of Tellurolate Dimers,[Mes2In (. mu.-Te-n-Pr)] 2 and [Mes2In (. mu.-TePh)] 2: Potential Precursors to Indium Chalcogenides | |
Mimeau et al. | Regioselective uncatalysed hydrophosphination of alkenes: a facile route to P-alkylated phosphine derivatives | |
He et al. | Study of the reactivity of the nitriles RCN (R= CH3, C6H5) toward the unsaturated dinuclear rhenium-ruthenium complex (PPh3) 2 (CO) HRe (. mu.-H) 3RuH (PPh3) 2: reversible hydrogen elimination (R= Me) or hydrometalation reactions (R= C6H5) | |
Arndtsen et al. | Stabilization of zero-valent hydrazido complexes by phosphine ligands. Crystal structure of fac-(CO) 3 (DPPE) W: NNMe2, a nitrene analogue to Fischer carbenes | |
Reveley et al. | Hydroelementation and Phosphinidene Transfer: Reactivity of Phosphagermenes and Phosphastannenes Towards Small Molecule Substrates | |
de Graaff et al. | A niobium pentafulvene ethylene complex: synthesis, properties and reaction pathways | |
JP2018162492A (ja) | イリジウム錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
JP2762917B2 (ja) | 有機金属化学蒸着法による白金膜形成材料と形成方法 | |
Yanagisawa et al. | Small molecule activation based on novel heavier group 13/15 interelement compounds, λ3, λ3-phosphanylalumanes | |
US20090291212A1 (en) | VOLATILE METAL COMPLEXES OF PERFLUORO-tert-BUTANOL | |
WO2023033185A1 (ja) | アンモニアの製造方法、並びに該製造方法に用いるモリブデン錯体及び該モリブデン錯体の原料である配位子 | |
Thornton Jr | Studies of metal-dihydroaromatic compounds as precursors for vapor deposition of thin films | |
Vanga et al. | Coinage Metal Complexes of a Sterically Encumbered Anionic Pyridylborate | |
Qin | Dioxygen chemistry of hydrotris (pyrazolyl) borate chromium (II) complexes | |
Khan et al. | Thermodynamics of homogeneous hydrogenation: Part IV. Synthesis, characterization and hydride formation of the pd (ii) complexes chloro-bis (diphenyl-phosphinoethyl) aminepalladium (ii) chloride and chloro-tris (diphenylphosphinoethyl) aminepalladium (II) chloride and their catalysis in the homogeneous hydrogenation of cyclohexene |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050426 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070111 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070529 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070829 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070905 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070919 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071207 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080104 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110111 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110111 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120111 Year of fee payment: 4 |
|
LAPS | Cancellation because of no payment of annual fees |