JP4053102B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4053102B2
JP4053102B2 JP26921496A JP26921496A JP4053102B2 JP 4053102 B2 JP4053102 B2 JP 4053102B2 JP 26921496 A JP26921496 A JP 26921496A JP 26921496 A JP26921496 A JP 26921496A JP 4053102 B2 JP4053102 B2 JP 4053102B2
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Japan
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region
impurity
channel formation
channel
semiconductor device
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Expired - Fee Related
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JP26921496A
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English (en)
Japanese (ja)
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JPH1093099A5 (enExample
JPH1093099A (ja
Inventor
舜平 山崎
久 大谷
潤 小山
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP26921496A priority Critical patent/JP4053102B2/ja
Publication of JPH1093099A publication Critical patent/JPH1093099A/ja
Publication of JPH1093099A5 publication Critical patent/JPH1093099A5/ja
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Publication of JP4053102B2 publication Critical patent/JP4053102B2/ja
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP26921496A 1996-09-18 1996-09-18 半導体装置およびその作製方法 Expired - Fee Related JP4053102B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26921496A JP4053102B2 (ja) 1996-09-18 1996-09-18 半導体装置およびその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26921496A JP4053102B2 (ja) 1996-09-18 1996-09-18 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JPH1093099A JPH1093099A (ja) 1998-04-10
JPH1093099A5 JPH1093099A5 (enExample) 2004-09-30
JP4053102B2 true JP4053102B2 (ja) 2008-02-27

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ID=17469267

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JP26921496A Expired - Fee Related JP4053102B2 (ja) 1996-09-18 1996-09-18 半導体装置およびその作製方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4275336B2 (ja) 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5439793B2 (ja) * 2008-11-06 2014-03-12 富士通株式会社 二次イオン質量分析法の深さ校正用試料、その製造方法及び二次イオン質量分析方法
KR20230154098A (ko) * 2009-10-08 2023-11-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2012157472A1 (en) * 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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Publication number Publication date
JPH1093099A (ja) 1998-04-10

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