JP4040392B2 - ポジ型フォトレジスト組成物 - Google Patents

ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP4040392B2
JP4040392B2 JP2002241946A JP2002241946A JP4040392B2 JP 4040392 B2 JP4040392 B2 JP 4040392B2 JP 2002241946 A JP2002241946 A JP 2002241946A JP 2002241946 A JP2002241946 A JP 2002241946A JP 4040392 B2 JP4040392 B2 JP 4040392B2
Authority
JP
Japan
Prior art keywords
group
general formula
alkyl group
acid
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002241946A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004078105A (ja
JP2004078105A5 (enExample
Inventor
淳 百田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002241946A priority Critical patent/JP4040392B2/ja
Priority to US10/642,576 priority patent/US7022456B2/en
Publication of JP2004078105A publication Critical patent/JP2004078105A/ja
Publication of JP2004078105A5 publication Critical patent/JP2004078105A5/ja
Application granted granted Critical
Publication of JP4040392B2 publication Critical patent/JP4040392B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2002241946A 2002-08-22 2002-08-22 ポジ型フォトレジスト組成物 Expired - Lifetime JP4040392B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002241946A JP4040392B2 (ja) 2002-08-22 2002-08-22 ポジ型フォトレジスト組成物
US10/642,576 US7022456B2 (en) 2002-08-22 2003-08-19 Positive photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002241946A JP4040392B2 (ja) 2002-08-22 2002-08-22 ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2004078105A JP2004078105A (ja) 2004-03-11
JP2004078105A5 JP2004078105A5 (enExample) 2005-09-22
JP4040392B2 true JP4040392B2 (ja) 2008-01-30

Family

ID=31986219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002241946A Expired - Lifetime JP4040392B2 (ja) 2002-08-22 2002-08-22 ポジ型フォトレジスト組成物

Country Status (2)

Country Link
US (1) US7022456B2 (enExample)
JP (1) JP4040392B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4861767B2 (ja) 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
US8697343B2 (en) 2006-03-31 2014-04-15 Jsr Corporation Fluorine-containing polymer, purification method, and radiation-sensitive resin composition
JP5075706B2 (ja) * 2007-03-27 2012-11-21 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP4866783B2 (ja) * 2007-04-27 2012-02-01 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP5047030B2 (ja) * 2008-03-26 2012-10-10 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP5618576B2 (ja) 2010-03-05 2014-11-05 富士フイルム株式会社 パターン形成方法
WO2012029758A1 (ja) * 2010-08-30 2012-03-08 富士フイルム株式会社 感光性樹脂組成物、オキシムスルホネート化合物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
JP2012145868A (ja) * 2011-01-14 2012-08-02 Tokyo Ohka Kogyo Co Ltd レジスト組成物及びレジストパターン形成方法
US9505945B2 (en) 2014-10-30 2016-11-29 Az Electronic Materials (Luxembourg) S.A.R.L. Silicon containing block copolymers for direct self-assembly application

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0721626B2 (ja) 1985-08-10 1995-03-08 日本合成ゴム株式会社 半導体微細加工用レジスト組成物
JP3112229B2 (ja) 1993-06-30 2000-11-27 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3456808B2 (ja) * 1995-09-29 2003-10-14 東京応化工業株式会社 ホトレジスト組成物
JP3679206B2 (ja) * 1996-09-20 2005-08-03 東京応化工業株式会社 ポジ型レジスト組成物、それを用いた多層レジスト材料及びレジストパターン形成方法
JP3919269B2 (ja) * 1996-11-08 2007-05-23 チッソ株式会社 Ｎ−ポリフロロアルキル置換（メタ）アクリルアミドを用いた単分子膜、累積膜および高分子膜
JP3786168B2 (ja) * 1998-09-22 2006-06-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
SG78412A1 (en) * 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
JP4262427B2 (ja) * 2000-09-12 2009-05-13 富士フイルム株式会社 ポジ型レジスト組成物
JP2002139838A (ja) * 2000-10-31 2002-05-17 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
EP1235106B1 (en) * 2001-02-08 2011-12-07 FUJIFILM Corporation Lithographic printing plate precursor
JP2002278053A (ja) * 2001-03-16 2002-09-27 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物

Also Published As

Publication number Publication date
JP2004078105A (ja) 2004-03-11
US7022456B2 (en) 2006-04-04
US20040048190A1 (en) 2004-03-11

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