JP4035453B2 - 構造体、構造体の製造方法、及び該構造体を用いたデバイス - Google Patents
構造体、構造体の製造方法、及び該構造体を用いたデバイス Download PDFInfo
- Publication number
- JP4035453B2 JP4035453B2 JP2003031015A JP2003031015A JP4035453B2 JP 4035453 B2 JP4035453 B2 JP 4035453B2 JP 2003031015 A JP2003031015 A JP 2003031015A JP 2003031015 A JP2003031015 A JP 2003031015A JP 4035453 B2 JP4035453 B2 JP 4035453B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- silicon
- germanium
- substrate
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Micromachines (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003031015A JP4035453B2 (ja) | 2002-02-12 | 2003-02-07 | 構造体、構造体の製造方法、及び該構造体を用いたデバイス |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002034006 | 2002-02-12 | ||
JP2002340944 | 2002-11-25 | ||
JP2003031015A JP4035453B2 (ja) | 2002-02-12 | 2003-02-07 | 構造体、構造体の製造方法、及び該構造体を用いたデバイス |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004223695A JP2004223695A (ja) | 2004-08-12 |
JP2004223695A5 JP2004223695A5 (hr) | 2006-03-23 |
JP4035453B2 true JP4035453B2 (ja) | 2008-01-23 |
Family
ID=32912775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003031015A Expired - Fee Related JP4035453B2 (ja) | 2002-02-12 | 2003-02-07 | 構造体、構造体の製造方法、及び該構造体を用いたデバイス |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4035453B2 (hr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4865200B2 (ja) * | 2003-08-07 | 2012-02-01 | キヤノン株式会社 | ナノ構造体及びその製造方法 |
JP4965835B2 (ja) * | 2005-03-25 | 2012-07-04 | キヤノン株式会社 | 構造体、その製造方法、及び該構造体を用いたデバイス |
JP2007146214A (ja) * | 2005-11-25 | 2007-06-14 | Canon Inc | 相分離膜及び構造体の製造方法 |
JP5016957B2 (ja) * | 2006-03-17 | 2012-09-05 | キヤノン株式会社 | 凹凸構造を有する型及び光学素子用型の製造方法並びに光学素子 |
JP5964744B2 (ja) * | 2012-12-26 | 2016-08-03 | 富士フイルム株式会社 | 半導体膜の製造方法 |
WO2015120893A1 (en) * | 2014-02-13 | 2015-08-20 | Mimsi Materials Ab | Method of coating a substrate so as to provide a controlled in-plane compositional modulation |
-
2003
- 2003-02-07 JP JP2003031015A patent/JP4035453B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2004223695A (ja) | 2004-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7282268B2 (en) | Structure, method of manufacturing the same, and device using the same | |
US7348670B2 (en) | Nanostructure, electronic device and method of manufacturing the same | |
US7393458B2 (en) | Porous material and production process thereof | |
US7892979B2 (en) | Columnar structured material and method of manufacturing the same | |
JP4970038B2 (ja) | ナノスケール繊維構造の合成方法およびその繊維構造を含む電子機器コンポーネント | |
WO2012118023A1 (ja) | グラフェンの製造方法、基板上に製造されたグラフェン、ならびに、基板上グラフェン | |
JP2012508682A (ja) | 単結晶ゲルマニウムコバルトナノワイヤ、ゲルマニウムコバルトナノワイヤ構造体、及びその製造方法 | |
CN1532866A (zh) | 一种场发射显示器的制作方法 | |
US20100221894A1 (en) | Method for manufacturing nanowires by using a stress-induced growth | |
JP4035453B2 (ja) | 構造体、構造体の製造方法、及び該構造体を用いたデバイス | |
CN1287413C (zh) | 一种场发射显示器 | |
Thune et al. | Understanding of one dimensional ordering mechanisms at the (001) sapphire vicinal surface | |
JP4904541B2 (ja) | 有機薄膜を有する基板及びそれを用いたトランジスタ並びにそれらの製造方法 | |
KR20080104455A (ko) | 인장응력을 이용한 단결정 열전 나노선 제조 방법 | |
JP6597333B2 (ja) | 層状カルコゲナイド膜の成長方法 | |
CN1740406A (zh) | 硅纳米线结构及其生长方法 | |
JP2004179229A (ja) | 構造体、その製造方法、及び前記構造体を用いた電子デバイス | |
JP2007216369A (ja) | シリコンナノ結晶材料の製造方法及び該製造方法で製造されたシリコンナノ結晶材料 | |
JP4035458B2 (ja) | 多孔質体の製造方法 | |
RU2628220C1 (ru) | Способ формирования массива нанопроволок на ступенчатой поверхности Cu2Si | |
KR102489412B1 (ko) | 카드뮴 아세나이드 나노선 및 이의 제조방법 | |
CN102553588A (zh) | 一种氧化锌纳米线生长所用的催化剂及其应用 | |
KR101480744B1 (ko) | 다성분 금속 게르마늄 규화물 단결정 나노선 및 이의 제조방법 | |
JP3950970B2 (ja) | Sn単結晶薄膜の製造方法 | |
KR20190103627A (ko) | 몰리브덴 산화막 나노 구조체 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060206 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060206 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070621 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070626 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070827 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071016 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071029 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101102 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101102 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111102 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121102 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131102 Year of fee payment: 6 |
|
LAPS | Cancellation because of no payment of annual fees |