JP4018935B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4018935B2
JP4018935B2 JP2002155499A JP2002155499A JP4018935B2 JP 4018935 B2 JP4018935 B2 JP 4018935B2 JP 2002155499 A JP2002155499 A JP 2002155499A JP 2002155499 A JP2002155499 A JP 2002155499A JP 4018935 B2 JP4018935 B2 JP 4018935B2
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Japan
Prior art keywords
sample
plasma
magnetic field
electrode
processing chamber
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Expired - Lifetime
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JP2002155499A
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English (en)
Japanese (ja)
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JP2003077903A5 (enrdf_load_stackoverflow
JP2003077903A (ja
Inventor
哲徳 加治
克哉 渡辺
克彦 三谷
徹 大坪
新一 田地
潤一 田中
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2002155499A priority Critical patent/JP4018935B2/ja
Publication of JP2003077903A publication Critical patent/JP2003077903A/ja
Publication of JP2003077903A5 publication Critical patent/JP2003077903A5/ja
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Publication of JP4018935B2 publication Critical patent/JP4018935B2/ja
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  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2002155499A 1996-03-01 2002-05-29 プラズマ処理装置 Expired - Lifetime JP4018935B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002155499A JP4018935B2 (ja) 1996-03-01 2002-05-29 プラズマ処理装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8-44391 1996-03-01
JP4439196 1996-03-01
JP9-7938 1997-01-20
JP793897 1997-01-20
JP2002155499A JP4018935B2 (ja) 1996-03-01 2002-05-29 プラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP04527597A Division JP3499104B2 (ja) 1996-03-01 1997-02-28 プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2003077903A JP2003077903A (ja) 2003-03-14
JP2003077903A5 JP2003077903A5 (enrdf_load_stackoverflow) 2004-12-16
JP4018935B2 true JP4018935B2 (ja) 2007-12-05

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ID=27277807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002155499A Expired - Lifetime JP4018935B2 (ja) 1996-03-01 2002-05-29 プラズマ処理装置

Country Status (1)

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JP (1) JP4018935B2 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008103760A (ja) * 2007-12-27 2008-05-01 Hitachi High-Technologies Corp プラズマ処理装置
KR102064914B1 (ko) * 2013-03-06 2020-01-10 삼성전자주식회사 식각 공정 장치 및 식각 공정 방법
US9824941B2 (en) * 2015-11-17 2017-11-21 Lam Research Corporation Systems and methods for detection of plasma instability by electrical measurement
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
KR102207755B1 (ko) * 2018-05-28 2021-01-26 주식회사 히타치하이테크 플라스마 처리 장치

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Publication number Publication date
JP2003077903A (ja) 2003-03-14

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